Abstract. Recently, all-inorganic double perovskite, lead-free absorber-based perovskite solar cells (PSCs) have been an active area of research. Due to its narrow bandgap and wide and high absorption, Cs2PtI6-based PSCs have generated wide interest. In this work, a comprehensive study of a Cs2PtI6-based PSC using solar cell capacitance simulator (SCAPS) one-dimensional is conducted. The simulation result is validated by comparing it with experimentally reported Cs2PtI6-based PSCs. To design a highly efficient, commercially feasible PSC, the variation in the performance of the PSC with six different electron transport layers (ETLs), ten-hole transport layers (HTLs), and nine metal contacts is investigated by simulation. Among the tried configurations, FTO / ZnO / Cs2PtI6 / MoO3 / Cu yielded the highest power conversion efficiency (PCE). The effect of varying the parameters of thickness, defect density, and doping concentration of the absorber layer; thickness, and doping concentration of the transport layers; and defect density of the interface layers on the performance of the device is investigated. The optimized device configuration yields an open-circuit voltage (Voc) of 1.3856 V, short-circuit current density (Jsc) of 16.107 mA / cm2, fill factor (FF) of 75.54%, and PCE of 16.85%. When the simulation is done with different back metal contacts, carbon yielded encouraging results with a Voc of 1.4105 V, Jsc of 16.112 mA / cm2, FF of 90.01%, and PCE of 20.45%.
{"title":"Device modeling of Cs2PtI6-based perovskite solar cell with diverse transport materials and contact metal electrodes: a comprehensive simulation study using solar cell capacitance simulator","authors":"M. Shamna, K. Sudheer","doi":"10.1117/1.JPE.12.032211","DOIUrl":"https://doi.org/10.1117/1.JPE.12.032211","url":null,"abstract":"Abstract. Recently, all-inorganic double perovskite, lead-free absorber-based perovskite solar cells (PSCs) have been an active area of research. Due to its narrow bandgap and wide and high absorption, Cs2PtI6-based PSCs have generated wide interest. In this work, a comprehensive study of a Cs2PtI6-based PSC using solar cell capacitance simulator (SCAPS) one-dimensional is conducted. The simulation result is validated by comparing it with experimentally reported Cs2PtI6-based PSCs. To design a highly efficient, commercially feasible PSC, the variation in the performance of the PSC with six different electron transport layers (ETLs), ten-hole transport layers (HTLs), and nine metal contacts is investigated by simulation. Among the tried configurations, FTO / ZnO / Cs2PtI6 / MoO3 / Cu yielded the highest power conversion efficiency (PCE). The effect of varying the parameters of thickness, defect density, and doping concentration of the absorber layer; thickness, and doping concentration of the transport layers; and defect density of the interface layers on the performance of the device is investigated. The optimized device configuration yields an open-circuit voltage (Voc) of 1.3856 V, short-circuit current density (Jsc) of 16.107 mA / cm2, fill factor (FF) of 75.54%, and PCE of 16.85%. When the simulation is done with different back metal contacts, carbon yielded encouraging results with a Voc of 1.4105 V, Jsc of 16.112 mA / cm2, FF of 90.01%, and PCE of 20.45%.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45074289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shah Alam, A. Anand, Md. Moidul Islam, R. Meitzner, Aurelien Sokeng Djoumessi, Josef Slowik, Zekarias Teklu, Peter Fischer, C. Kästner, J. I. Khan, U. Schubert, F. Laquai, H. Hoppe
Abstract. Here, we studied the influence of pre- and post-thermal annealing on the performance of polymer:fullerene bulk heterojunction solar cells using the conventional architecture, comprising a conjugated polymer, namely, poly(3-hexylthiophene-2,5-diyl) (P3HT) and a fullerene derivative [6,6]-phenyl-C60-butyric acid methyl ester (PC60BM) as a photoactive layer. The non-annealed active layer device exhibited a power conversion efficiency of <1 % , which was significantly lower than the pre- and post-annealed devices. To investigate the impact of pre- and post thermal annealing on the natural morphological state of the polymer, regiorandom (P3HT-I) and regioregular (P3HT-II) type P3HT were compared in photoactive layers. In general, P3HT-I is amorphous, whereas P3HT-II is semi-crystalline. Changes in solar cell performance were associated with changes in carrier extraction efficiencies influenced by the annealing conditions. The charge photogeneration processes were investigated using spectroscopic techniques, including electroluminescence, steady-state, and time-resolved photoluminescence spectroscopy. Finally, to explore the morphological changes upon annealing, atomic force microscopy and electroluminescence imaging measurements were performed on films and solar cells, respectively.
{"title":"P3HT:PCBM polymer solar cells from a didactic perspective","authors":"Shah Alam, A. Anand, Md. Moidul Islam, R. Meitzner, Aurelien Sokeng Djoumessi, Josef Slowik, Zekarias Teklu, Peter Fischer, C. Kästner, J. I. Khan, U. Schubert, F. Laquai, H. Hoppe","doi":"10.1117/1.JPE.12.035501","DOIUrl":"https://doi.org/10.1117/1.JPE.12.035501","url":null,"abstract":"Abstract. Here, we studied the influence of pre- and post-thermal annealing on the performance of polymer:fullerene bulk heterojunction solar cells using the conventional architecture, comprising a conjugated polymer, namely, poly(3-hexylthiophene-2,5-diyl) (P3HT) and a fullerene derivative [6,6]-phenyl-C60-butyric acid methyl ester (PC60BM) as a photoactive layer. The non-annealed active layer device exhibited a power conversion efficiency of <1 % , which was significantly lower than the pre- and post-annealed devices. To investigate the impact of pre- and post thermal annealing on the natural morphological state of the polymer, regiorandom (P3HT-I) and regioregular (P3HT-II) type P3HT were compared in photoactive layers. In general, P3HT-I is amorphous, whereas P3HT-II is semi-crystalline. Changes in solar cell performance were associated with changes in carrier extraction efficiencies influenced by the annealing conditions. The charge photogeneration processes were investigated using spectroscopic techniques, including electroluminescence, steady-state, and time-resolved photoluminescence spectroscopy. Finally, to explore the morphological changes upon annealing, atomic force microscopy and electroluminescence imaging measurements were performed on films and solar cells, respectively.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48066463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract. The editorial introduces the JPE Special Section on Novel Photovoltaic Device Architectures.
摘要该社论介绍了JPE关于新型光伏器件架构的特别部分。
{"title":"Special Section Guest Editorial: Novel Photovoltaic Device Architectures","authors":"I. Sellers, F. Toor","doi":"10.1117/1.JPE.12.032201","DOIUrl":"https://doi.org/10.1117/1.JPE.12.032201","url":null,"abstract":"Abstract. The editorial introduces the JPE Special Section on Novel Photovoltaic Device Architectures.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44985876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. P. Piyathilaka, R. Sooriyagoda, V. R. Whiteside, T. Mishima, Michael B. Santos, I. Sellers, A. Bristow
Abstract. Type-II multiple quantum well superlattices based on InAs/AlAsSb are investigated for ground- and excited-state charge carrier transport and excited-state charge carrier dynamics. It is found that ground-state transport matches well to impurity and optical phonon interactions, while the excited-state transport shows increased terahertz photoconductivity for the correct excitation conditions that have previously been linked to a metastability in the early time response after photoexcitation. This regime also shows a reduction in carrier mobility, which is also expected to be due to ambipolar diffusion and increased carrier–carrier scattering. Overall, carrier excited-state dynamics confirm the metastability in early time response and are related to strong Auger scattering. For increased excitation intensities, the Auger-scattering rate increases to obtain a lower carrier density more rapidly. The result is a stronger scattering of carriers energetically deeper into their respective bands, where they exhibit a much slower carrier recombination rate and can maintain their relative temperature as a result of a phonon bottleneck that forces reabsorption of optical phonons. In addition to a previously reported phonon bottleneck, the carrier dynamics offer potential pathways to stabilize hot carriers with further bandgap engineering.
{"title":"Hot-carrier dynamics and transport in III–V heterostructures for photovoltaic applications","authors":"H. P. Piyathilaka, R. Sooriyagoda, V. R. Whiteside, T. Mishima, Michael B. Santos, I. Sellers, A. Bristow","doi":"10.1117/1.JPE.12.032209","DOIUrl":"https://doi.org/10.1117/1.JPE.12.032209","url":null,"abstract":"Abstract. Type-II multiple quantum well superlattices based on InAs/AlAsSb are investigated for ground- and excited-state charge carrier transport and excited-state charge carrier dynamics. It is found that ground-state transport matches well to impurity and optical phonon interactions, while the excited-state transport shows increased terahertz photoconductivity for the correct excitation conditions that have previously been linked to a metastability in the early time response after photoexcitation. This regime also shows a reduction in carrier mobility, which is also expected to be due to ambipolar diffusion and increased carrier–carrier scattering. Overall, carrier excited-state dynamics confirm the metastability in early time response and are related to strong Auger scattering. For increased excitation intensities, the Auger-scattering rate increases to obtain a lower carrier density more rapidly. The result is a stronger scattering of carriers energetically deeper into their respective bands, where they exhibit a much slower carrier recombination rate and can maintain their relative temperature as a result of a phonon bottleneck that forces reabsorption of optical phonons. In addition to a previously reported phonon bottleneck, the carrier dynamics offer potential pathways to stabilize hot carriers with further bandgap engineering.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46958883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Maxime Giteau, S. Almosni, J. Guillemoles, D. Suchet
Abstract. The resilience against non-idealities of hot-carrier multijunction solar cells (HCMJSCs) is assessed and compared with two references, namely a multijunction solar cell (MJSC) and a hot carrier solar cell (HCSC). We investigate the impact on the efficiency of three deviations from the ideal case: nonoptimal design, internal limitations, and nonstandard operation conditions. We show that the HCMJSC maintains a high efficiency even when materials with nonoptimal bandgaps are considered, broadening the range of candidate materials for its implementation. We also show that the requirement for hot carriers’ thermalization is much less stringent than with the standard HCSC architecture, allowing to surpass the best MJSC efficiency with currently achievable thermalization coefficients. Finally, we estimate the influence of nonstandard illumination by varying the AM spectrum and estimate numerically the yearly averaged efficiency of devices installed in two different locations. Preliminary results on temperature dependence are also presented.
{"title":"Hot-carrier multijunction solar cells: sensitivity and resilience to nonidealities","authors":"Maxime Giteau, S. Almosni, J. Guillemoles, D. Suchet","doi":"10.1117/1.JPE.12.032208","DOIUrl":"https://doi.org/10.1117/1.JPE.12.032208","url":null,"abstract":"Abstract. The resilience against non-idealities of hot-carrier multijunction solar cells (HCMJSCs) is assessed and compared with two references, namely a multijunction solar cell (MJSC) and a hot carrier solar cell (HCSC). We investigate the impact on the efficiency of three deviations from the ideal case: nonoptimal design, internal limitations, and nonstandard operation conditions. We show that the HCMJSC maintains a high efficiency even when materials with nonoptimal bandgaps are considered, broadening the range of candidate materials for its implementation. We also show that the requirement for hot carriers’ thermalization is much less stringent than with the standard HCSC architecture, allowing to surpass the best MJSC efficiency with currently achievable thermalization coefficients. Finally, we estimate the influence of nonstandard illumination by varying the AM spectrum and estimate numerically the yearly averaged efficiency of devices installed in two different locations. Preliminary results on temperature dependence are also presented.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47546147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract. Significant progress in the development of nonreciprocal optical components with broken Kirchhoff symmetry paves the way for increasing the photovoltaic (PV) conversion efficiency beyond the Shockley–Queisser limit due to reuse of emitted photons. Recent papers have analyzed the PV converter with several or an infinite number of multijunction cells, in which the cells are coupled via nonreciprocal filters (optical diodes) in such a way that the light emitted by one cell is absorbed by another cell. We proposed and investigated a single cell converter with nonreciprocal external photon recycling, which provided reabsorption and reuse of the emitting light by the same cell. We considered properties of photons in the sunbeam in terms of ergodicity, disorder, energy availability, information entropy, and coherence, and established fundamental limitations imposed by endoreversible thermodynamics on conversion efficiency at maximal power output. Our results show that the nonreciprocal converter with an ideal multijunction cell can approach the Carnot efficiency, whereas operating exactly at the Carnot limit requires an infinite number of photon recycling processes. This requirement resolves the famous thermodynamic paradox of the optical diode because any small dissipation in the cell or optical system enhanced by infinite recycling will stabilize the converter operation below the Carnot limit. We generalized endoreversible thermodynamics to photonic distributions with nonzero chemical potential and derived the limiting efficiency of the nonreciprocal single-junction PV converter. The performance of this converter with available GaAs solar cells was evaluated.
{"title":"Nonreciprocal photonic management for photovoltaic conversion: design and fundamental efficiency limits","authors":"A. Sergeev, K. Sablon","doi":"10.1117/1.JPE.12.032207","DOIUrl":"https://doi.org/10.1117/1.JPE.12.032207","url":null,"abstract":"Abstract. Significant progress in the development of nonreciprocal optical components with broken Kirchhoff symmetry paves the way for increasing the photovoltaic (PV) conversion efficiency beyond the Shockley–Queisser limit due to reuse of emitted photons. Recent papers have analyzed the PV converter with several or an infinite number of multijunction cells, in which the cells are coupled via nonreciprocal filters (optical diodes) in such a way that the light emitted by one cell is absorbed by another cell. We proposed and investigated a single cell converter with nonreciprocal external photon recycling, which provided reabsorption and reuse of the emitting light by the same cell. We considered properties of photons in the sunbeam in terms of ergodicity, disorder, energy availability, information entropy, and coherence, and established fundamental limitations imposed by endoreversible thermodynamics on conversion efficiency at maximal power output. Our results show that the nonreciprocal converter with an ideal multijunction cell can approach the Carnot efficiency, whereas operating exactly at the Carnot limit requires an infinite number of photon recycling processes. This requirement resolves the famous thermodynamic paradox of the optical diode because any small dissipation in the cell or optical system enhanced by infinite recycling will stabilize the converter operation below the Carnot limit. We generalized endoreversible thermodynamics to photonic distributions with nonzero chemical potential and derived the limiting efficiency of the nonreciprocal single-junction PV converter. The performance of this converter with available GaAs solar cells was evaluated.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43588773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mirsaeid Sarollahi, Mohammad Zamani Alavijeh, Manal A. Aldawsari, Rohith Allaparthi, Reem Alhelais, M. Refaei, Md Helal Uddin Maruf, M. Ware
Abstract. The optical properties of Λ-graded indium gallium nitride (InGaN) solar cells are studied. Graded InGaN well structures with the indium composition increasing to xmax and then decreasing in a Λ-shaped pattern have been designed. Through polarization doping, this naturally creates alternating p- and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations ranging from 20% to 90%, while maintaining a constant overall structure thickness of 100 nm. The solar cell parameters under fully strained and relaxed conditions are considered. The results show that a maximum efficiency of ≅5.5 % under fully strained condition occurs for xmax = 60 % . Solar cell efficiency under relaxed conditions increases to a maximum of 8.3% for xmax = 90 % . Vegard’s law predicts the bandgap under relaxed conditions, whereas a Vegard-like law is empirically determined from the output of nextnano™ for varying indium compositions to calculate the solar cell parameters under strain.
{"title":"Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features","authors":"Mirsaeid Sarollahi, Mohammad Zamani Alavijeh, Manal A. Aldawsari, Rohith Allaparthi, Reem Alhelais, M. Refaei, Md Helal Uddin Maruf, M. Ware","doi":"10.1117/1.JPE.12.022205","DOIUrl":"https://doi.org/10.1117/1.JPE.12.022205","url":null,"abstract":"Abstract. The optical properties of Λ-graded indium gallium nitride (InGaN) solar cells are studied. Graded InGaN well structures with the indium composition increasing to xmax and then decreasing in a Λ-shaped pattern have been designed. Through polarization doping, this naturally creates alternating p- and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations ranging from 20% to 90%, while maintaining a constant overall structure thickness of 100 nm. The solar cell parameters under fully strained and relaxed conditions are considered. The results show that a maximum efficiency of ≅5.5 % under fully strained condition occurs for xmax = 60 % . Solar cell efficiency under relaxed conditions increases to a maximum of 8.3% for xmax = 90 % . Vegard’s law predicts the bandgap under relaxed conditions, whereas a Vegard-like law is empirically determined from the output of nextnano™ for varying indium compositions to calculate the solar cell parameters under strain.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45428181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carlos Tamayo-Bello, Á. Sauceda-Carvajal, R. Villa-Angulo, Carlos Villa-Angulo
Abstract. Susceptibility to environmental factors, such as moisture, humidity, oxygen, heat, and ultraviolet (UV) light (photoinstability), has affected perovskite solar cell (PSC) stability in practical applications. To overcome the instability and performance degradation due to oxygen, humidity, and moisture, different strategies and encapsulation schemes have been proposed, and promising results have been obtained. However, photostability remains a major hurdle because UV light is an inherent part of the standard incident spectrum of PSCs. To prevent photoinstability and increase quantum energy harvesting levels, cadmium chalcogenide (CC) photoluminescent (PL) filters for downconverting the UV part of the incident spectra obtained for PSCs are proposed in this work. The concept was illustrated by matching 500-nm-thick CC-PL filters to the front glass of a PSC to form a CC-PL/glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)/perovskite/Ag structure. Cadmium sulfide (CdS), cadmium selenide, and cadmium telluride were taken as the CC materials. Practical measurements confirmed that the PSC with the CdS-PL filter can maintain 92% of its initial value under continuous light soaking for more than 100 h. Furthermore, this PSC exhibited the best improvement in power conversion efficiency.
{"title":"Photoinstability aversion in perovskite solar cell by downconversion cadmium chalcogenide filters","authors":"Carlos Tamayo-Bello, Á. Sauceda-Carvajal, R. Villa-Angulo, Carlos Villa-Angulo","doi":"10.1117/1.JPE.12.025501","DOIUrl":"https://doi.org/10.1117/1.JPE.12.025501","url":null,"abstract":"Abstract. Susceptibility to environmental factors, such as moisture, humidity, oxygen, heat, and ultraviolet (UV) light (photoinstability), has affected perovskite solar cell (PSC) stability in practical applications. To overcome the instability and performance degradation due to oxygen, humidity, and moisture, different strategies and encapsulation schemes have been proposed, and promising results have been obtained. However, photostability remains a major hurdle because UV light is an inherent part of the standard incident spectrum of PSCs. To prevent photoinstability and increase quantum energy harvesting levels, cadmium chalcogenide (CC) photoluminescent (PL) filters for downconverting the UV part of the incident spectra obtained for PSCs are proposed in this work. The concept was illustrated by matching 500-nm-thick CC-PL filters to the front glass of a PSC to form a CC-PL/glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)/perovskite/Ag structure. Cadmium sulfide (CdS), cadmium selenide, and cadmium telluride were taken as the CC materials. Practical measurements confirmed that the PSC with the CdS-PL filter can maintain 92% of its initial value under continuous light soaking for more than 100 h. Furthermore, this PSC exhibited the best improvement in power conversion efficiency.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44432911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Azmot Ullah Khan, Naheem Olakunle Adesina, Jian Xu
Abstract. A physics-based analytical model is important to understand the working mechanism through process parameters of any innovative material heterostructure. We present an analytical model to calculate the power conversion efficiency of solar cells based on graphene and III-V direct bandgap semiconductors. The model is comprehensively developed by incorporating several current densities obtained from both the generation and recombination processes. Moreover, to obtain a highly efficient Schottky junction solar cell, we propose an optimized structure of graphene/GaAs with lattice-matched passivation and carrier selective layers. The structure has the advantage of surface passivation and photon recycling that reduces interface recombination and ensures more electron–hole pair generation, respectively. It exhibits a theoretical efficiency of >18 % from the analytical model simulation which is later verified by numerical simulation using SCAPS 1D software. The analytical model will provide not only a better understanding of the solar cells’ operation but also a comparative study among them to achieve better efficiency in the future. In addition, the enhanced efficiency of the proposed structure will encourage further research in this field of study.
{"title":"Analytical modeling and design optimization of a graphene/n-GaAs Schottky junction solar cell","authors":"Md Azmot Ullah Khan, Naheem Olakunle Adesina, Jian Xu","doi":"10.1117/1.JPE.12.025502","DOIUrl":"https://doi.org/10.1117/1.JPE.12.025502","url":null,"abstract":"Abstract. A physics-based analytical model is important to understand the working mechanism through process parameters of any innovative material heterostructure. We present an analytical model to calculate the power conversion efficiency of solar cells based on graphene and III-V direct bandgap semiconductors. The model is comprehensively developed by incorporating several current densities obtained from both the generation and recombination processes. Moreover, to obtain a highly efficient Schottky junction solar cell, we propose an optimized structure of graphene/GaAs with lattice-matched passivation and carrier selective layers. The structure has the advantage of surface passivation and photon recycling that reduces interface recombination and ensures more electron–hole pair generation, respectively. It exhibits a theoretical efficiency of >18 % from the analytical model simulation which is later verified by numerical simulation using SCAPS 1D software. The analytical model will provide not only a better understanding of the solar cells’ operation but also a comparative study among them to achieve better efficiency in the future. In addition, the enhanced efficiency of the proposed structure will encourage further research in this field of study.","PeriodicalId":16781,"journal":{"name":"Journal of Photonics for Energy","volume":null,"pages":null},"PeriodicalIF":1.7,"publicationDate":"2022-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44768077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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