Lead-free all-inorganic perovskites have emerged as promising materials for environmentally sustainable photovoltaic technologies. In this study, SCAPS-1D simulations are employed to investigate the optoelectronic behavior of Cs2TiF6 and CsSnI3 absorbers in both single-layer and bilayer device configurations. By systematically varying absorber thickness, acceptor doping concentration, and bulk defect density, the work establishes how these intrinsic material parameters influence charge generation, recombination dynamics, and overall device performance. The simulations show that Cs2TiF6-based devices exhibit high open-circuit voltage due to their wide bandgap, while CsSnI3 enables strong current generation stemming from its narrow bandgap and efficient near-infrared absorption. Integrating the two materials into a bilayer absorber architecture combines these advantages, enhancing spectral utilization and promoting more effective charge separation across the internal interface. Under idealized low-defect conditions, the bilayer device reaches a maximum theoretical efficiency of 32.93 %, whereas realistic defect densities typical of solution-processed Cs-based perovskites (1015-1018 cm−3) yield efficiencies in the range of 12–26 %. The study further highlights the sensitivity of device behavior to defect concentration, doping levels, and absorber–absorber interface quality, and it clarifies how these factors shape the operational limits of lead-free perovskite solar cells. By mapping the relationships between absorber properties and photovoltaic response, the work outlines design principles that can support the development of scalable, stable, and high-performance lead-free perovskite photovoltaics.
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