Research into an efficient, stable solar device has been going for a long time. Materials such as Cesium Lead Iodide (CsPbI3), mixed chalcogenide (CZTSSe), Cesium Tin Iodide (CsSnI3), Cesium Tin Germanium Iodide (CsSnGeI3) and Copper Indium Gallium Selenide (CIGS) are promising thin-film absorber materials offering tunable bandgaps, strong light absorption, and potential for high-efficiency, stable, and eco-friendly solar cell applications, making them valuable candidates for next-generation solar cell technologies. This work numerically simulated novel all-perovskite triple absorber solar cell device employing CsPbI3, CsSnGeI3, and CsSnI3 as the active layers. This study analyzes the effects of absorber thickness, the influence of total defect density, working temperature, the impact of series and shunt resistance, and various electron and hole transport materials on the performance of photovoltaic devices. After researching a variety of distinct arrangements of triple absorber solar cells structures, it was realized that the all-perovskite: FTO/WS/CsPbI3/CsSnGeI3/CsSnI3/NiOx/Au cell configuration exhibited the best overall performance with an open circuit voltage (Voc) at 1.21 V, a short circuit current density (Jsc) at 34.35 mA/cm, a FF at 87.04%, and PCE at 36.11%. The optimal absorber thicknesses for all three active layers were found to be , , respectively. This PSC structure showed exceptional thermal stability (0.07%/K degradation of PCE at 350 K) but was sensitive to high series and low shunt resistance. Anode material with work functions 5.20 eV is suitable for the device.
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