Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573612
S. Sakina, Z. Johari, Zuriana Auzar, N. Alias, A. Hamzah, M. Yusoff
Semiconductor material is concerned with mobility and on/off current ratio to achieve a high figure of merit for electronic device application. The aim of this study was to demonstrate deformation effect on armchair graphene nanoribbon (AGNR) by warping for improving its transport properties using first principle calculation coupled with the non-equilibrium green function (NEGF) method. Through simulation, significant improvement by 50% in on current are observed when the AGNR is warp upward. In addition, the warping effect is more noticeable in the transport properties compared to the electronic properties. This alternative geometry of AGNR provide ways to minimize the well-known drawbacks normally associated with the short channel effect as device dimension scaled down and expand the possibility of realizing their benefit particularly in high speed device application.
{"title":"Improving transport properties of armchair graphene nanoribbon by warping: A first principle study","authors":"S. Sakina, Z. Johari, Zuriana Auzar, N. Alias, A. Hamzah, M. Yusoff","doi":"10.1109/SMELEC.2016.7573612","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573612","url":null,"abstract":"Semiconductor material is concerned with mobility and on/off current ratio to achieve a high figure of merit for electronic device application. The aim of this study was to demonstrate deformation effect on armchair graphene nanoribbon (AGNR) by warping for improving its transport properties using first principle calculation coupled with the non-equilibrium green function (NEGF) method. Through simulation, significant improvement by 50% in on current are observed when the AGNR is warp upward. In addition, the warping effect is more noticeable in the transport properties compared to the electronic properties. This alternative geometry of AGNR provide ways to minimize the well-known drawbacks normally associated with the short channel effect as device dimension scaled down and expand the possibility of realizing their benefit particularly in high speed device application.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131349889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573574
M. Hussain
Summary form only given. Computation and infotainment are the two major areas where Complementary Metal Oxide Semiconductor (CMOS) electronics have made major contributions. Moving forward we expect to see their dominance in automotive applications. At the same time, we are seeing increased interest in the area of Internet of Things (IoT) to connect trillions of sensors. We are preparing for Internet of Everything (IoE) applications where people, process, data and devices are going to be connected through new generation of electronics which are not possible today. Therefore, our research is focused on hybrid integration of heterogeneous materials, processes and devices to build free form (flexible, stretchable, reconfigurable in shape and size) interactive and high-performance electronics and systems for smart living and a sustainable future focusing on healthcare, water, food and environment. For scientific exploration, we develop integration strategy to make collective use of the materials, processes and device architecture leveraging multidisciplinary tracks of electrical engineering, material science, bioengineering, computer science and engineering, mechanical engineering, environmental engineering (focusing plants and marine science) and health science. As engineering tool, we use CMOS technology extensively due to its industrial relevance, maturity and reliability for rapid tech transfer. In my talk, I will discuss the advances we have made to make tomorrow's applications available today. Specifically I will be using some examples which are commercially relevant and/or under commercialization: (i) healthcare devices; (ii) 3D printed smart objects with embedded electronics; (iii) plug and play smart electronic platforms with integrated sensors and actuators and (iv) physically reconfigurable shape systems.
{"title":"Live, free, democratized electronics: Bridging catalyst of multi-disciplinary research","authors":"M. Hussain","doi":"10.1109/SMELEC.2016.7573574","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573574","url":null,"abstract":"Summary form only given. Computation and infotainment are the two major areas where Complementary Metal Oxide Semiconductor (CMOS) electronics have made major contributions. Moving forward we expect to see their dominance in automotive applications. At the same time, we are seeing increased interest in the area of Internet of Things (IoT) to connect trillions of sensors. We are preparing for Internet of Everything (IoE) applications where people, process, data and devices are going to be connected through new generation of electronics which are not possible today. Therefore, our research is focused on hybrid integration of heterogeneous materials, processes and devices to build free form (flexible, stretchable, reconfigurable in shape and size) interactive and high-performance electronics and systems for smart living and a sustainable future focusing on healthcare, water, food and environment. For scientific exploration, we develop integration strategy to make collective use of the materials, processes and device architecture leveraging multidisciplinary tracks of electrical engineering, material science, bioengineering, computer science and engineering, mechanical engineering, environmental engineering (focusing plants and marine science) and health science. As engineering tool, we use CMOS technology extensively due to its industrial relevance, maturity and reliability for rapid tech transfer. In my talk, I will discuss the advances we have made to make tomorrow's applications available today. Specifically I will be using some examples which are commercially relevant and/or under commercialization: (i) healthcare devices; (ii) 3D printed smart objects with embedded electronics; (iii) plug and play smart electronic platforms with integrated sensors and actuators and (iv) physically reconfigurable shape systems.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"342 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124227965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573632
H. Hashim, S. S. Shariffudin, M. Sarah, N. I. Nasir
The objective of this research is to evaluate the effect of different molar concentration of the copper oxide (CuO) thin films deposited using spin-coating technique. The CuO thin films were deposited on 500μm quartz substrates. The molar concentration of CuO solutions used were 0.3M, 0.35M, 0.4M, 0.45M and 0.5M were prepared using sol-gel method. These solutions were formed by dissolving copper acetate powder into isopropanol, diethanolamine and polyethylene glycol. All samples were annealed at 600°C for 1 hour in a furnace. The electrical properties were measured by two point probe to check thin film resistivity. The electrical measurements showed that current increased with the concentration. The thicknesses were performed using the surface profiler while the surfaces morphology were characterized using Field Emission Scanning Electron Microscopy (FESEM). The films surfaces were smooth with uniformly distributed grains. The optical transmittances were measured using UV-Vis spectrometer and the reading decreased with concentration.
{"title":"The characterization of copper oxide with different molar concentration using sol-gel spin coating","authors":"H. Hashim, S. S. Shariffudin, M. Sarah, N. I. Nasir","doi":"10.1109/SMELEC.2016.7573632","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573632","url":null,"abstract":"The objective of this research is to evaluate the effect of different molar concentration of the copper oxide (CuO) thin films deposited using spin-coating technique. The CuO thin films were deposited on 500μm quartz substrates. The molar concentration of CuO solutions used were 0.3M, 0.35M, 0.4M, 0.45M and 0.5M were prepared using sol-gel method. These solutions were formed by dissolving copper acetate powder into isopropanol, diethanolamine and polyethylene glycol. All samples were annealed at 600°C for 1 hour in a furnace. The electrical properties were measured by two point probe to check thin film resistivity. The electrical measurements showed that current increased with the concentration. The thicknesses were performed using the surface profiler while the surfaces morphology were characterized using Field Emission Scanning Electron Microscopy (FESEM). The films surfaces were smooth with uniformly distributed grains. The optical transmittances were measured using UV-Vis spectrometer and the reading decreased with concentration.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124377020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573607
M. Fathil, M. Arshad, A. R. Ruslinda, R. Adzhri, U. Hashim, M. Nuzaihan, C. Ibau
This paper studies the application of substrate-gate (SG) bias on the electrical characteristics of a zinc oxide (ZnO) field-effect transistor (FET) structure for biosensing application. A commercial numerical simulation, Silvaco ATLAS is utilized in simulation process and the impacts of various substrate-gate voltage (VSG) on the device structure, in terms of electron concentration and current-voltage (I-V) characteristics of the FET-based biosensor are investigated. Application of negatively VSG has shifted the threshold voltage (VT) of the device toward lower drain voltage (VD) and increased the drain current (ID) across source (S) and drain (D), while application of positive VSG has given a contradict effects. In addition, the surface of ZnO thin film are introduced with interface charge (QF), representing charged target molecule for biosensing application. These effects on the device have given a helpful indication for a practical fabrication process and for biosensor applications.
{"title":"The effect of substrate-gate bias on the zinc oxide field-effect transistor for biosensing application","authors":"M. Fathil, M. Arshad, A. R. Ruslinda, R. Adzhri, U. Hashim, M. Nuzaihan, C. Ibau","doi":"10.1109/SMELEC.2016.7573607","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573607","url":null,"abstract":"This paper studies the application of substrate-gate (SG) bias on the electrical characteristics of a zinc oxide (ZnO) field-effect transistor (FET) structure for biosensing application. A commercial numerical simulation, Silvaco ATLAS is utilized in simulation process and the impacts of various substrate-gate voltage (VSG) on the device structure, in terms of electron concentration and current-voltage (I-V) characteristics of the FET-based biosensor are investigated. Application of negatively VSG has shifted the threshold voltage (VT) of the device toward lower drain voltage (VD) and increased the drain current (ID) across source (S) and drain (D), while application of positive VSG has given a contradict effects. In addition, the surface of ZnO thin film are introduced with interface charge (QF), representing charged target molecule for biosensing application. These effects on the device have given a helpful indication for a practical fabrication process and for biosensor applications.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128671264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573651
S. Rabbaa, G. Shkerdin, W. Vandermeiren, J. Stiens
GSolver software is used to optimize the parameters of a GaAs-based layers structure for modulating the reflectivity of light. This structure can be used in an Integrated Mirror Optical Switch (IMOS) for the Q-switching technology. A system of low doped GaAs and highly doped AlGaAs structure is built on a binary diffraction grating composed of germanium and gold. The diffraction efficiency is determined with and without the existence of free carriers in the highly doped layer. The impact of the sheet charge density at the interface of the heterostructure is considered in determining of the diffraction efficiency. At the end of the study, the structure parameters and thicknesses are determined for a high sensitive device.
{"title":"GaAs-based grating system for Q-switching on the basis of IMOS structure","authors":"S. Rabbaa, G. Shkerdin, W. Vandermeiren, J. Stiens","doi":"10.1109/SMELEC.2016.7573651","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573651","url":null,"abstract":"GSolver software is used to optimize the parameters of a GaAs-based layers structure for modulating the reflectivity of light. This structure can be used in an Integrated Mirror Optical Switch (IMOS) for the Q-switching technology. A system of low doped GaAs and highly doped AlGaAs structure is built on a binary diffraction grating composed of germanium and gold. The diffraction efficiency is determined with and without the existence of free carriers in the highly doped layer. The impact of the sheet charge density at the interface of the heterostructure is considered in determining of the diffraction efficiency. At the end of the study, the structure parameters and thicknesses are determined for a high sensitive device.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"4 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125058438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573659
Nabihah Sihar, C. Dee, Mohd Ambri Mohamed, Tiong Teck Yaw, Muhammad Mat Salleh, B. Majlis, Mohd Asyadi 'Azam Mohd Abid
Nowadays, reduced graphene oxide (rGO) has been used in many applications because the surface defect density can be controlled compared to pristine graphene. It has a band gap which make it easier to integrate with existing technologies. Though, a simple process and large scale device fabrication is needed to align the rGO during fabrication of device. In this work, dielectrophoresis (DEP) technique has been used to align the rGO on a substrate with interdigitated electrodes. First, the rGO was drop-casted on sample with interdigitated electrodes. Followed by DEP process to align the deposited rGO. Electrical measurement has been done. It shows that the conductivity and current increases with the increased number of drops for rGO solution. SEM image shows a distribution pattern which forms percolation network pathway of rGO. Raman spectroscopy confirmed the presence of rGO in between the channel of electrodes. This simple technique has the potential to be used for future large scale device fabrication.
{"title":"Electrical characterization of reduced graphene oxide deposited on interdigitated electrodes","authors":"Nabihah Sihar, C. Dee, Mohd Ambri Mohamed, Tiong Teck Yaw, Muhammad Mat Salleh, B. Majlis, Mohd Asyadi 'Azam Mohd Abid","doi":"10.1109/SMELEC.2016.7573659","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573659","url":null,"abstract":"Nowadays, reduced graphene oxide (rGO) has been used in many applications because the surface defect density can be controlled compared to pristine graphene. It has a band gap which make it easier to integrate with existing technologies. Though, a simple process and large scale device fabrication is needed to align the rGO during fabrication of device. In this work, dielectrophoresis (DEP) technique has been used to align the rGO on a substrate with interdigitated electrodes. First, the rGO was drop-casted on sample with interdigitated electrodes. Followed by DEP process to align the deposited rGO. Electrical measurement has been done. It shows that the conductivity and current increases with the increased number of drops for rGO solution. SEM image shows a distribution pattern which forms percolation network pathway of rGO. Raman spectroscopy confirmed the presence of rGO in between the channel of electrodes. This simple technique has the potential to be used for future large scale device fabrication.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127483152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573628
R. Adzhri, M. K. Md Arshad, A. R. Ruslinda, S. Gopinath, M. Fathil, R. M. Ayub, M. Nuzaihan, U. Hashim
The existing FET-based biosensors nowadays only depend on a physical structure size of a device. Due to those limitation, the device can only be read with the presence of high sensitivity electrical readers. To synchronize the device with a low-cost portable electrical reader, the electrical signal need to be amplified with minimal noise output. In this work, a label-free, specific and sensitive back-gated FET based biosensor is presented for the detection of cTnI protein by using SOI type of wafer with TiO2 act as a transducer material. TiO2 is deposited by using sol-gel method with surface functionalized for cTnI protein binding. From the XPS result, it shows that each covalent bonding characteristic from APTES deposition until cTnI antibody-antigen interaction. Finally, the electrical (Id-Vbg) result show the ability to detect cTnI protein with concentration of 2.0 μg/μl at -150 μA (Vd= 0). As Vd increases, a tremendous increment of electrical conductivity with larger difference of Id value between each surface functionalization processes can be achieved. At Vd= -5, the electrical conductivity jumped up to -1 mA, more than 500% increase compared to Vd= 0.
{"title":"FET-based biosensors with back-gate coupling towards the electrical pre-amplification of cardiac troponin I detection","authors":"R. Adzhri, M. K. Md Arshad, A. R. Ruslinda, S. Gopinath, M. Fathil, R. M. Ayub, M. Nuzaihan, U. Hashim","doi":"10.1109/SMELEC.2016.7573628","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573628","url":null,"abstract":"The existing FET-based biosensors nowadays only depend on a physical structure size of a device. Due to those limitation, the device can only be read with the presence of high sensitivity electrical readers. To synchronize the device with a low-cost portable electrical reader, the electrical signal need to be amplified with minimal noise output. In this work, a label-free, specific and sensitive back-gated FET based biosensor is presented for the detection of cTnI protein by using SOI type of wafer with TiO2 act as a transducer material. TiO2 is deposited by using sol-gel method with surface functionalized for cTnI protein binding. From the XPS result, it shows that each covalent bonding characteristic from APTES deposition until cTnI antibody-antigen interaction. Finally, the electrical (Id-Vbg) result show the ability to detect cTnI protein with concentration of 2.0 μg/μl at -150 μA (Vd= 0). As Vd increases, a tremendous increment of electrical conductivity with larger difference of Id value between each surface functionalization processes can be achieved. At Vd= -5, the electrical conductivity jumped up to -1 mA, more than 500% increase compared to Vd= 0.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121928773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573601
Jhunlyn J. Lorenzo, F. Caluyo, S. D. Fenol
Accuracy, as one of the major concerns in control systems, can be better achieved by considering the system to be of fractional order than of integer order, since not all physical relationships are ideal in nature. The large internal capacitance of supercapacitor, which causes longer time constant, leads to a complex internal behavior. This study proposed an equivalent circuit of a supercapacitor with parameters consisting of ohmic loss, leakage resistance, capacitance in fractional order, and inductance for high frequency applications. Riemann-Lioville definition of fractional calculus was used in formulating the equivalent mathematical model and in solving the order of the system for varying frequency. The Panasonic's 10F and 30F gold capacitors were subjected to charge and discharge tests as well as in current-frequency test, and the resulting time responses and frequency responses were used in the parameter extraction.
{"title":"Parameter extraction method for fractional order supercapacitor system model","authors":"Jhunlyn J. Lorenzo, F. Caluyo, S. D. Fenol","doi":"10.1109/SMELEC.2016.7573601","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573601","url":null,"abstract":"Accuracy, as one of the major concerns in control systems, can be better achieved by considering the system to be of fractional order than of integer order, since not all physical relationships are ideal in nature. The large internal capacitance of supercapacitor, which causes longer time constant, leads to a complex internal behavior. This study proposed an equivalent circuit of a supercapacitor with parameters consisting of ohmic loss, leakage resistance, capacitance in fractional order, and inductance for high frequency applications. Riemann-Lioville definition of fractional calculus was used in formulating the equivalent mathematical model and in solving the order of the system for varying frequency. The Panasonic's 10F and 30F gold capacitors were subjected to charge and discharge tests as well as in current-frequency test, and the resulting time responses and frequency responses were used in the parameter extraction.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116883742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573584
M. R. Buyong, F. Larki, Y. Takamura, Norazreen Abd Aziz, J. Yunas, A. A. Hamzah, B. Majlis
This paper describes a possible application of dielectrophoretic force (FDEP) in glomerular filtration part of mimic human kidney blood filtration process. In an electrokinetics occurrence, a miniaturized array type of two poles microelectrodes has been simulated, fabricated, and tested using engineered particles. The particles can be attracted laterally towards or repelled vertically from the regions of strong intensity electric field, depending upon whether the particles are more or less polarisable than the suspending medium. The FDEP response is further improved by application of tapered DEP electrode profile. The finding of this work is possible to contribute in medical sciences research such as integration of DEP into a lab on a chip (LOC) for application in filters implemented in artificial kidney.
{"title":"Implementing the concept of dielectrophoresis in glomerular filtration of human kidneys","authors":"M. R. Buyong, F. Larki, Y. Takamura, Norazreen Abd Aziz, J. Yunas, A. A. Hamzah, B. Majlis","doi":"10.1109/SMELEC.2016.7573584","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573584","url":null,"abstract":"This paper describes a possible application of dielectrophoretic force (FDEP) in glomerular filtration part of mimic human kidney blood filtration process. In an electrokinetics occurrence, a miniaturized array type of two poles microelectrodes has been simulated, fabricated, and tested using engineered particles. The particles can be attracted laterally towards or repelled vertically from the regions of strong intensity electric field, depending upon whether the particles are more or less polarisable than the suspending medium. The FDEP response is further improved by application of tapered DEP electrode profile. The finding of this work is possible to contribute in medical sciences research such as integration of DEP into a lab on a chip (LOC) for application in filters implemented in artificial kidney.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1832 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129780008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573625
M. Sarah, N. Azman, S. S. Shariffudin, H. Hashim
In this work, we have successfully prepared TiO2 thin films doped with various concentration of NbCl5. The doping concentrations were varied from 0.0 mol%, 0.1 mol%, 0.2 mol%, 0.3 mol% and 0.4 mol%. The characterizations were done by means of electrical properties and surface morphology. The results show that as the concentrations of NbCl5 increased, current escalates. For surface morphology, the grain size of TiO2 thin films becomes larger when doping concentrations were increased. It shows that the I-V characteristic depends on the grain size as the doping concentration of NbCl5 varies. The optimized thin film in this work is 0.4 mol% of NbCl5.
{"title":"Increment on Grain Size of TiO2 doped niobium chloride (NbCl5) by sol-gel spin coating technique","authors":"M. Sarah, N. Azman, S. S. Shariffudin, H. Hashim","doi":"10.1109/SMELEC.2016.7573625","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573625","url":null,"abstract":"In this work, we have successfully prepared TiO2 thin films doped with various concentration of NbCl5. The doping concentrations were varied from 0.0 mol%, 0.1 mol%, 0.2 mol%, 0.3 mol% and 0.4 mol%. The characterizations were done by means of electrical properties and surface morphology. The results show that as the concentrations of NbCl5 increased, current escalates. For surface morphology, the grain size of TiO2 thin films becomes larger when doping concentrations were increased. It shows that the I-V characteristic depends on the grain size as the doping concentration of NbCl5 varies. The optimized thin film in this work is 0.4 mol% of NbCl5.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132744807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：