Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573649
Z. S. Hashim, Md Nizam Abd Rahman, M. Muhamad, A. Ahmad
Copper metallization process, using electroplating, in Integrated Circuit interconnect, poses big challenge in semiconductor fabrication. Besides the stringent Dual Damascene requirement, the copper material itself is prone to rapid interface diffusion as well as surface oxidation. Thus the copper metallization process has to be performed within specific time after copper seed deposition process. This study investigated the impact of bilayer TaN/Ta barrier on copper sheet resistance changes at different time intervals. The study was based on 200mm wafer. In addition to that, correlation between sheet resistance to other copper film properties such as reflectance and stress was also investigated. Based on results of this study, bilayer TaN/Ta barrier inclusion in copper seed greatly improved film sheet resistance stability.
{"title":"The impact of the bilayer TaN/Ta barrier at the copper seed and copper electroplating process in semiconductor fabrication","authors":"Z. S. Hashim, Md Nizam Abd Rahman, M. Muhamad, A. Ahmad","doi":"10.1109/SMELEC.2016.7573649","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573649","url":null,"abstract":"Copper metallization process, using electroplating, in Integrated Circuit interconnect, poses big challenge in semiconductor fabrication. Besides the stringent Dual Damascene requirement, the copper material itself is prone to rapid interface diffusion as well as surface oxidation. Thus the copper metallization process has to be performed within specific time after copper seed deposition process. This study investigated the impact of bilayer TaN/Ta barrier on copper sheet resistance changes at different time intervals. The study was based on 200mm wafer. In addition to that, correlation between sheet resistance to other copper film properties such as reflectance and stress was also investigated. Based on results of this study, bilayer TaN/Ta barrier inclusion in copper seed greatly improved film sheet resistance stability.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134450808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573593
K. Kaharudin, F. Salehuddin, A. Zain, M. Aziz, Z. Manap, Nurul Akmal Abd Salam, Wira Hidayat Bin Mohd Saad
This paper aims to propose a new structure of vertical double-gate NMOS device with titanium silicide (TiSix) and hafnium dioxide (HfO2) are utilized as gates and an insulator correspondingly. The simulation and characterization of the proposed device were carried out by using ATHENA and ATLAS modules of Silvaco TCAD tools. The threshold voltage (VTH) of the device was then optimized by tuning the correct level of halo implant dose, halo implant tilt, S/D implant energy and S/D implant tilt via the L9 orthogonal array (OA) of Taguchi method. The vertical TiSix/HfO2 channel vertical double-gate NMOS device has shown excellent device characteristics as the VTH, drive current (ION), leakage current (IOFF), ION/IOFF ratio and subthreshold swing (SS) were observed to be 0.2101 V, 2235.3 μA/μm, 1.363E-15 A/μm, 1.64E12 and 58.76 mV/dec respectively. These results are within the expected requirement of high performance (HP) multi gate (MG) technology as predicted by International Technology Roadmap Semiconductor (ITRS) 2013.
{"title":"Design and optimization of TiSix/HfO2 channel vertical double gate NMOS device","authors":"K. Kaharudin, F. Salehuddin, A. Zain, M. Aziz, Z. Manap, Nurul Akmal Abd Salam, Wira Hidayat Bin Mohd Saad","doi":"10.1109/SMELEC.2016.7573593","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573593","url":null,"abstract":"This paper aims to propose a new structure of vertical double-gate NMOS device with titanium silicide (TiSi<sub>x</sub>) and hafnium dioxide (HfO<sub>2</sub>) are utilized as gates and an insulator correspondingly. The simulation and characterization of the proposed device were carried out by using ATHENA and ATLAS modules of Silvaco TCAD tools. The threshold voltage (V<sub>TH</sub>) of the device was then optimized by tuning the correct level of halo implant dose, halo implant tilt, S/D implant energy and S/D implant tilt via the L<sub>9</sub> orthogonal array (OA) of Taguchi method. The vertical TiSi<sub>x</sub>/HfO<sub>2</sub> channel vertical double-gate NMOS device has shown excellent device characteristics as the V<sub>TH</sub>, drive current (I<sub>ON</sub>), leakage current (I<sub>OFF</sub>), I<sub>ON</sub>/I<sub>OFF</sub> ratio and subthreshold swing (SS) were observed to be 0.2101 V, 2235.3 μA/μm, 1.363E-15 A/μm, 1.64E12 and 58.76 mV/dec respectively. These results are within the expected requirement of high performance (HP) multi gate (MG) technology as predicted by International Technology Roadmap Semiconductor (ITRS) 2013.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123276668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573624
M. Panday, M. Vinoth, S. Surendhiran, V. Rajendran, P. Menon
The electrical conductivity of the bulk and grain boundary of oxygen deficient (CaxSr1-x)(Ti0.8Fe0.2)O3-δ (x = 0.14, 0.16, 0.18, and 2.0) polycrystalline specimens were estimated by complex impedance spectroscopy analysis in the domestic frequency ranges from 0.01 Hz to 1 MHz at room temperature. The powder ceramic was synthesized using the sonochemical route. Powder X-ray diffraction of all the samples at 1000 °C shows cubic phase in symmetry. The impedance plots are composed of semicircles followed by warburg impedance for all the compounds. The shrinkage of grains and grain boundaries contribution are increased when Sr2+ ion concentration is increased. This is evident from the observed SEM image of grain morphology of the prepared powders. Frequency dependence of all the electrical parameters are carried out using complex impedance spectroscopy (CIS) analysis. The large dielectric constant is found in CSTFO14 sample in the magnitude order of ~×10^5. So, this kind of materials used for the applications of microwave and radio wave communications.
{"title":"Investigation on electrical conductivity of strontium (Sr2+) influenced CaTi0.8Fe0.2O3 polycrystalline perovskite","authors":"M. Panday, M. Vinoth, S. Surendhiran, V. Rajendran, P. Menon","doi":"10.1109/SMELEC.2016.7573624","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573624","url":null,"abstract":"The electrical conductivity of the bulk and grain boundary of oxygen deficient (CaxSr1-x)(Ti0.8Fe0.2)O3-δ (x = 0.14, 0.16, 0.18, and 2.0) polycrystalline specimens were estimated by complex impedance spectroscopy analysis in the domestic frequency ranges from 0.01 Hz to 1 MHz at room temperature. The powder ceramic was synthesized using the sonochemical route. Powder X-ray diffraction of all the samples at 1000 °C shows cubic phase in symmetry. The impedance plots are composed of semicircles followed by warburg impedance for all the compounds. The shrinkage of grains and grain boundaries contribution are increased when Sr2+ ion concentration is increased. This is evident from the observed SEM image of grain morphology of the prepared powders. Frequency dependence of all the electrical parameters are carried out using complex impedance spectroscopy (CIS) analysis. The large dielectric constant is found in CSTFO14 sample in the magnitude order of ~×10^5. So, this kind of materials used for the applications of microwave and radio wave communications.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121940315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573585
M. R. Buyong, F. Larki, Norazreen Abd Aziz, J. Yunas, A. A. Hamzah, B. Majlis
In this research, we discussed laboratory analysis of the dielectrophoretic force response (DFR) using Lactobacillus Casei. Platinum microelectrode array with ~ 80 μm spacing on glass substrate (PMA) are used to study dielectrophoretic behaviour for rod shaped Lactobacillus Casei with size of width 0.7 to 1.1 μm and length of 2 to 4 μm. An experiment was conducted under positive dielectrophoresis (PDEP), negative dielectrophoresis (NDEP) and crossover frequency (fxo) of Lactobacillus Casei over a wide range frequency from 0 Hz to 1 MHz. Implementation DFR proved the capability to streamed the lactobacillus from right to left side and from left to right side based input frequency tuned at fxo ~ 3550 Hz with 10% to 15% input frequency tolerance.
{"title":"Dielectrophoretic force response for Lactobacillus Casei","authors":"M. R. Buyong, F. Larki, Norazreen Abd Aziz, J. Yunas, A. A. Hamzah, B. Majlis","doi":"10.1109/SMELEC.2016.7573585","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573585","url":null,"abstract":"In this research, we discussed laboratory analysis of the dielectrophoretic force response (DFR) using Lactobacillus Casei. Platinum microelectrode array with ~ 80 μm spacing on glass substrate (PMA) are used to study dielectrophoretic behaviour for rod shaped Lactobacillus Casei with size of width 0.7 to 1.1 μm and length of 2 to 4 μm. An experiment was conducted under positive dielectrophoresis (PDEP), negative dielectrophoresis (NDEP) and crossover frequency (fxo) of Lactobacillus Casei over a wide range frequency from 0 Hz to 1 MHz. Implementation DFR proved the capability to streamed the lactobacillus from right to left side and from left to right side based input frequency tuned at fxo ~ 3550 Hz with 10% to 15% input frequency tolerance.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"82 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128168919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573646
Thung Beng Joo, K. Ibrahim, Nurulfajar Abd Manap, S. Fauziyah
Nowadays sustaining semiconductor business needs competitiveness improvement which includes scaling down the technology node from CMOS 0.18μm to 0.13μm using similar equipment platforms. In this paper, the enabling new advances technology is through process improvement. The method is complicated and easily caused systematics wafer edge yield loss during initial technology development due to process margin and equipment capability. This paper presents an integrated engineering approach to improve sort yield especially at the wafer edge region. Shallow Trench Isolation (STI) deposition void that causes poly stringer defect is one of the major contributors of yield loss. The process improvement includes understanding caused of defect, process optimization approach that lead to re-design of the STI layout with Optical Proximity Correction (OPC) tagging. The improvement has successfully enable CMOS 0.13μm technology to process at CMOS 0.18μm equipment platform and implemented in production.
{"title":"Wafer edge Shallow Trench Isolation side wall defect reduction on advanced CMOS 0.13µm technology at 0.18µm equipment platform","authors":"Thung Beng Joo, K. Ibrahim, Nurulfajar Abd Manap, S. Fauziyah","doi":"10.1109/SMELEC.2016.7573646","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573646","url":null,"abstract":"Nowadays sustaining semiconductor business needs competitiveness improvement which includes scaling down the technology node from CMOS 0.18μm to 0.13μm using similar equipment platforms. In this paper, the enabling new advances technology is through process improvement. The method is complicated and easily caused systematics wafer edge yield loss during initial technology development due to process margin and equipment capability. This paper presents an integrated engineering approach to improve sort yield especially at the wafer edge region. Shallow Trench Isolation (STI) deposition void that causes poly stringer defect is one of the major contributors of yield loss. The process improvement includes understanding caused of defect, process optimization approach that lead to re-design of the STI layout with Optical Proximity Correction (OPC) tagging. The improvement has successfully enable CMOS 0.13μm technology to process at CMOS 0.18μm equipment platform and implemented in production.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"355 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115933446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573642
F. A. Said, P. Menon, Mohd Nuriman Nawi, A. M. Md Zain, A. Jalar, B. Majlis
This paper is intended to investigate the copper-graphene surface plasmon resonance (SPR)-based biosensor by considering the high adsorption efficiency of graphene. Copper (Cu) is used as a plasmonic material whereas graphene is used to prevent Cu from oxidation and enhance the reflectance intensity. Numerical investigation is performed using finite-difference-time-domain (FDTD) method by comparing the sensing performance such as reflectance intensity that explains the sensor sensitivity and the full-width-at-half-maximum (FWHM) of the spectrum for detection accuracy. The measurements were observed with various Cu thin film thicknesses ranging from 20nm to 80nm with 785nm operating wavelength. The proposed sensor shows that the 40nm-thick Cu-graphene (1 layer) SPR-based sensor gave better performance with narrower plasmonic spectrum line width (reflectance intensity of 91.2%) and better FWHM of 3.08°. The measured results also indicate that the Cu-graphene SPR-based sensor is suitable for detecting urea with refractive index of 1.49 in dielectric medium.
{"title":"Copper-graphene SPR-based biosensor for urea detection","authors":"F. A. Said, P. Menon, Mohd Nuriman Nawi, A. M. Md Zain, A. Jalar, B. Majlis","doi":"10.1109/SMELEC.2016.7573642","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573642","url":null,"abstract":"This paper is intended to investigate the copper-graphene surface plasmon resonance (SPR)-based biosensor by considering the high adsorption efficiency of graphene. Copper (Cu) is used as a plasmonic material whereas graphene is used to prevent Cu from oxidation and enhance the reflectance intensity. Numerical investigation is performed using finite-difference-time-domain (FDTD) method by comparing the sensing performance such as reflectance intensity that explains the sensor sensitivity and the full-width-at-half-maximum (FWHM) of the spectrum for detection accuracy. The measurements were observed with various Cu thin film thicknesses ranging from 20nm to 80nm with 785nm operating wavelength. The proposed sensor shows that the 40nm-thick Cu-graphene (1 layer) SPR-based sensor gave better performance with narrower plasmonic spectrum line width (reflectance intensity of 91.2%) and better FWHM of 3.08°. The measured results also indicate that the Cu-graphene SPR-based sensor is suitable for detecting urea with refractive index of 1.49 in dielectric medium.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129493037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573576
Ladon Ahmed Bade, J. Dennis, M. Khir, W. P. Wen
This paper presents a tunable Radio Frequency Micro Electromechanical Systems (RF-MEMS) coupled band-pass filter (BPF) with wide tuning range based on the Chebyshev fourth degree equivalent circuit using inter-digitized tunable capacitors, and fixed inductors. A new tunable BPF with a 100% tuning range from 3.1 to 4.9 GHz has been designed and simulated to verify the proposed method. The band-pass filter was fabricated using Metal Multi-User MEMS Process (MUMPs) process. The objective is to understand reconfigurable frequencies and attain high RF performance for Ultra Wide Band (UWB) application such as in wireless sensor network. The filter displayed good RF performance because of its simple fabrication, less insertion loss around 4 dB and high return loss of around 20 dB.
{"title":"Modeling and simulation of tunable band-pass filter based on metal-mumps","authors":"Ladon Ahmed Bade, J. Dennis, M. Khir, W. P. Wen","doi":"10.1109/SMELEC.2016.7573576","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573576","url":null,"abstract":"This paper presents a tunable Radio Frequency Micro Electromechanical Systems (RF-MEMS) coupled band-pass filter (BPF) with wide tuning range based on the Chebyshev fourth degree equivalent circuit using inter-digitized tunable capacitors, and fixed inductors. A new tunable BPF with a 100% tuning range from 3.1 to 4.9 GHz has been designed and simulated to verify the proposed method. The band-pass filter was fabricated using Metal Multi-User MEMS Process (MUMPs) process. The objective is to understand reconfigurable frequencies and attain high RF performance for Ultra Wide Band (UWB) application such as in wireless sensor network. The filter displayed good RF performance because of its simple fabrication, less insertion loss around 4 dB and high return loss of around 20 dB.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128836970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573604
Muhammad Syafiq Rahim, N. Selamat, J. Yunas, A. Ehsan
This paper focuses on the effect of geometrical cross section between rectangular and circular shapes on the hydrodynamic focusing of a micro flow cytometer device. The effect of fluid flow ratio between the main and sheath channels on the focusing width is studied. This study has been performed using a COMSOL Multiphysics simulation tool. The results showed that focusing width decreases as the ratio between main channel and sheath channels are increased. The concentration at long-range is studied and indicated that circular shape can sustain a higher concentration at the centre along the channel compared with rectangular shape. The velocity at the cross-section of the channel-junction shows that circular shape produces higher velocity at the centre of the channel compare to that of the rectangular shape. The effect of flow ratio and geometrical shape are significantly vital for microfluidic system which utilizes hydrodynamic focusing for biological and chemical analysis. From the result, micro flow cytometer studied able to use for human body cells such as glucose, virus, red blood cells and white blood cells which have a range size of 2-120 microns.
{"title":"Effect of geometrical shapes on 3D hydrodynamic focusing of a microfluidic flow cytometer","authors":"Muhammad Syafiq Rahim, N. Selamat, J. Yunas, A. Ehsan","doi":"10.1109/SMELEC.2016.7573604","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573604","url":null,"abstract":"This paper focuses on the effect of geometrical cross section between rectangular and circular shapes on the hydrodynamic focusing of a micro flow cytometer device. The effect of fluid flow ratio between the main and sheath channels on the focusing width is studied. This study has been performed using a COMSOL Multiphysics simulation tool. The results showed that focusing width decreases as the ratio between main channel and sheath channels are increased. The concentration at long-range is studied and indicated that circular shape can sustain a higher concentration at the centre along the channel compared with rectangular shape. The velocity at the cross-section of the channel-junction shows that circular shape produces higher velocity at the centre of the channel compare to that of the rectangular shape. The effect of flow ratio and geometrical shape are significantly vital for microfluidic system which utilizes hydrodynamic focusing for biological and chemical analysis. From the result, micro flow cytometer studied able to use for human body cells such as glucose, virus, red blood cells and white blood cells which have a range size of 2-120 microns.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124999695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573643
Veeraiyah Thangasamy, V. Thiruchelvam, M. Hamidon, S. Hashim, M. Bukhori, Z. Yusoff, N. Kamsani
Multimode multiband connectivity has become a defacto requirement for smartphones with 3G WCDMA/4G LTE applications. In this research, a two-stage multimode multiband (MMMB) power amplifier (PA) with multiple gated transistor (MGTR) and configurable tapped transformer is designed and analysed in view of enhancing the efficiency in low power mode. The designed MMMB PA offers a 900MHz of operating bandwidth starting from the frequency of 1400MHz up to 2300MHz, covering 16 LTE FDD bands with peak output power of 27.8dBm and peak PAE of 31% in the high power mode. In low power mode, the PA offers the same bandwidth with peak output power of 25.5dBm and PAE of 30%. Use of the multiple gated transistor with tapped transformer for matching has increased the PAE in low power mode by 19% compared with that PAE in the high power mode.
{"title":"Multimode multiband power amplifier with tapped transformer for efficiency enhancement in low power mode","authors":"Veeraiyah Thangasamy, V. Thiruchelvam, M. Hamidon, S. Hashim, M. Bukhori, Z. Yusoff, N. Kamsani","doi":"10.1109/SMELEC.2016.7573643","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573643","url":null,"abstract":"Multimode multiband connectivity has become a defacto requirement for smartphones with 3G WCDMA/4G LTE applications. In this research, a two-stage multimode multiband (MMMB) power amplifier (PA) with multiple gated transistor (MGTR) and configurable tapped transformer is designed and analysed in view of enhancing the efficiency in low power mode. The designed MMMB PA offers a 900MHz of operating bandwidth starting from the frequency of 1400MHz up to 2300MHz, covering 16 LTE FDD bands with peak output power of 27.8dBm and peak PAE of 31% in the high power mode. In low power mode, the PA offers the same bandwidth with peak output power of 25.5dBm and PAE of 30%. Use of the multiple gated transistor with tapped transformer for matching has increased the PAE in low power mode by 19% compared with that PAE in the high power mode.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124623579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/SMELEC.2016.7573608
G. M. Khanal, G. Cardarilli, A. Chakraborty, Simone Acciarito, M. Y. Mulla, L. Di Nunzio, R. Fazzolari, M. Re
Ultrathin 2D materials such as TiO2, WOx, NiO, ZnO, VO2 and graphene, offer scope for low power, highly dense and ultra-fast electronic devices. Due to their extraordinary physical and electrical/electronic property. In this work, a novel forming free memristor has been realized based on hybrid film of ZnO-rGO. The structure of the device is Metal-Insulator-Metal structure, where the Zinc Oxide- Reduced Graphene Oxide (ZnO-rGO) thin film is sandwiched between Silver (Ag) and Fluorine-doped tin oxide (FTO) coated glass. Free oxygen vacancies were created within the composite film by using high temperature annealing at 500 degrees Celsius. We demonstrate bipolar resistive switching behavior of the new device. Also we show that the variation of the conductance of the device is related to delay time of the applied input voltage sweep.
{"title":"A ZnO-rGO composite thin film discrete memristor","authors":"G. M. Khanal, G. Cardarilli, A. Chakraborty, Simone Acciarito, M. Y. Mulla, L. Di Nunzio, R. Fazzolari, M. Re","doi":"10.1109/SMELEC.2016.7573608","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573608","url":null,"abstract":"Ultrathin 2D materials such as TiO2, WOx, NiO, ZnO, VO2 and graphene, offer scope for low power, highly dense and ultra-fast electronic devices. Due to their extraordinary physical and electrical/electronic property. In this work, a novel forming free memristor has been realized based on hybrid film of ZnO-rGO. The structure of the device is Metal-Insulator-Metal structure, where the Zinc Oxide- Reduced Graphene Oxide (ZnO-rGO) thin film is sandwiched between Silver (Ag) and Fluorine-doped tin oxide (FTO) coated glass. Free oxygen vacancies were created within the composite film by using high temperature annealing at 500 degrees Celsius. We demonstrate bipolar resistive switching behavior of the new device. Also we show that the variation of the conductance of the device is related to delay time of the applied input voltage sweep.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126586523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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