Pub Date : 1986-07-08DOI: 10.1002/J.1538-7305.1986.TB00468.X
W. Davis, Robert J. Lavigna, D. L. Rehrig, Raymond E. Reusser, George Williams
Silicon for microelectronic devices is prepared by a complex process that converts polycrystalline material into a single crystal ingot of silicon weighing as much as 40 kilograms. The crystal must conform to precise mechanical, electrical, chemical, and crystallographic standards. The crystal ingot is sliced into wafers which are polished and covered with an epitaxial layer having the same crystal structure as the wafer but different electrical properties. Understanding and controlling the growth processes involved in producing the single-crystal ingot and the epitaxial layer is crucial to manufacturing the high-quality starting material for today's very large scale integrated circuits.
{"title":"Silicon crystal growth and epitaxial layer deposition for VLSI devices","authors":"W. Davis, Robert J. Lavigna, D. L. Rehrig, Raymond E. Reusser, George Williams","doi":"10.1002/J.1538-7305.1986.TB00468.X","DOIUrl":"https://doi.org/10.1002/J.1538-7305.1986.TB00468.X","url":null,"abstract":"Silicon for microelectronic devices is prepared by a complex process that converts polycrystalline material into a single crystal ingot of silicon weighing as much as 40 kilograms. The crystal must conform to precise mechanical, electrical, chemical, and crystallographic standards. The crystal ingot is sliced into wafers which are polished and covered with an epitaxial layer having the same crystal structure as the wafer but different electrical properties. Understanding and controlling the growth processes involved in producing the single-crystal ingot and the epitaxial layer is crucial to manufacturing the high-quality starting material for today's very large scale integrated circuits.","PeriodicalId":170077,"journal":{"name":"AT&T Technical Journal","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1986-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117974962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The chief objective of this paper is to develop a fundamental understanding of the effects of laser phase noise on the performance of coherent lightwave communication systems. A comprehensive treatment applicable to a wide variety of coherent receiver designs under a broad range of conditions is provided. Our models and analytical tools are developed in sufficient detail to encompass a broad range of applications. Formulas are derived for the bit error rate in homodyne and heterodyne Phase Shift Keying (PSK), Differential Phase Shift Keying (DPSK), Frequency Shift Keying (FSK) and on-off keying. Estimates are provided of the penalties accrued due to phase noise. Based on detailed mathematical analysis and estimates, we made several findings. Near quantum-limited receiver sensitivity can be achieved with PSK using homodyne detection only at signaling rates 3000 times greater than the laser linewidth. A receiver sensitivity 3 to 6 decibels poorer than the quantum limit can be achieved with heterodyne rather than homodyne detection. DPSK, for example, can operate at rates only 300 times greater than the laser linewidth. At lower rates, FSK is an attractive candidate. It can be designed to be extremely tolerant of phase noise by using wide frequency deviations.
{"title":"Coherent lightwave communications","authors":"J. Salz","doi":"10.1117/12.967602","DOIUrl":"https://doi.org/10.1117/12.967602","url":null,"abstract":"The chief objective of this paper is to develop a fundamental understanding of the effects of laser phase noise on the performance of coherent lightwave communication systems. A comprehensive treatment applicable to a wide variety of coherent receiver designs under a broad range of conditions is provided. Our models and analytical tools are developed in sufficient detail to encompass a broad range of applications. Formulas are derived for the bit error rate in homodyne and heterodyne Phase Shift Keying (PSK), Differential Phase Shift Keying (DPSK), Frequency Shift Keying (FSK) and on-off keying. Estimates are provided of the penalties accrued due to phase noise. Based on detailed mathematical analysis and estimates, we made several findings. Near quantum-limited receiver sensitivity can be achieved with PSK using homodyne detection only at signaling rates 3000 times greater than the laser linewidth. A receiver sensitivity 3 to 6 decibels poorer than the quantum limit can be achieved with heterodyne rather than homodyne detection. DPSK, for example, can operate at rates only 300 times greater than the laser linewidth. At lower rates, FSK is an attractive candidate. It can be designed to be extremely tolerant of phase noise by using wide frequency deviations.","PeriodicalId":170077,"journal":{"name":"AT&T Technical Journal","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126698471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S is a language and system for interactive data analysis and graphics. It emphasizes interactive analysis and graphics, ease of use, flexibility, and extensibility. While sharing many characteristics with other statistical systems, S differs significantly in its design goals, its implementation, and the way it is used. This paper presents some of the design concepts and implementation techniques in S and relates these general ideas in computing to the specific design goals for S and to other statistical systems.
{"title":"Design of the S system for data analysis","authors":"R. A. Becker, J. Chambers","doi":"10.1145/358189.358078","DOIUrl":"https://doi.org/10.1145/358189.358078","url":null,"abstract":"S is a language and system for interactive data analysis and graphics. It emphasizes interactive analysis and graphics, ease of use, flexibility, and extensibility. While sharing many characteristics with other statistical systems, S differs significantly in its design goals, its implementation, and the way it is used. This paper presents some of the design concepts and implementation techniques in S and relates these general ideas in computing to the specific design goals for S and to other statistical systems.","PeriodicalId":170077,"journal":{"name":"AT&T Technical Journal","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1984-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121508116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15325/atttj.1996.6772885
Innovation Briefs are summaries of recent discoveries and developments within AT&T Bell Laboratories. Patents To Build On call attention to AT&T patents that may have commercial potential. Those wishing further information, or AT&T readers who would like to contribute future items, are encouraged to contact the AT&T Technical Journal editor.
{"title":"AT&T innovation briefs","authors":"","doi":"10.15325/atttj.1996.6772885","DOIUrl":"https://doi.org/10.15325/atttj.1996.6772885","url":null,"abstract":"Innovation Briefs are summaries of recent discoveries and developments within AT&T Bell Laboratories. Patents To Build On call attention to AT&T patents that may have commercial potential. Those wishing further information, or AT&T readers who would like to contribute future items, are encouraged to contact the AT&T Technical Journal editor.","PeriodicalId":170077,"journal":{"name":"AT&T Technical Journal","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123932474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1002/j.1538-7305.1993.tb00532.x
The briefs in this section are summaries of recent discoveries and developments within AT&T Bell Laboratories. AT&T readers who would like to contribute future items, and readers who would like further information as well, are encouraged to contact the AT&T Technical Journal editor.
{"title":"AT&T innovation briefs","authors":"","doi":"10.1002/j.1538-7305.1993.tb00532.x","DOIUrl":"https://doi.org/10.1002/j.1538-7305.1993.tb00532.x","url":null,"abstract":"The briefs in this section are summaries of recent discoveries and developments within AT&T Bell Laboratories. AT&T readers who would like to contribute future items, and readers who would like further information as well, are encouraged to contact the AT&T Technical Journal editor.","PeriodicalId":170077,"journal":{"name":"AT&T Technical Journal","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120044561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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