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A Reference Clock Doubler with Fully Digital Duty-cycle Error Correction Controller 带全数字占空比纠错控制器的参考时钟倍频器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-12-31 DOI: 10.5573/jsts.2021.21.6.466
Donggyu Kim, Joon-Mo Yoo, Younggun Pu, Yeonjae Jung, Hyungki Huh, S. Kim, K. Hwang, Youngoo Yang, Kangyoon Lee
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引用次数: 0
A New Coupling Spring Design for MEMS Tuning Fork Structures Demonstrating Robustness to Fabrication Errors and Linear Accelerations 一种新的MEMS音叉结构耦合弹簧设计,对制造误差和线性加速度具有鲁棒性
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-12-31 DOI: 10.5573/jsts.2021.21.6.418
Faisal Iqbal, Hussamud Din, Seungoh Han, Byeungleul Lee
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引用次数: 0
A 320-MS/s 2-b/cycle Second-order Noise-shaping SAR ADC 320ms /s 2-b/周二阶噪声整形SAR ADC
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-12-31 DOI: 10.5573/jsts.2021.21.6.472
Jaehyeong Park, Sang-Gyu Park
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引用次数: 0
Transistor Count Reduction Technique for Clockfree Null-convention Arithmetic Logic Circuits 无时钟零约定算术逻辑电路的晶体管计数减少技术
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-12-31 DOI: 10.5573/jsts.2021.21.6.483
Prashanthi Metku, Kyung Ki Kim, Yong-Bin Kim, Minsu Choi
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引用次数: 0
Time-interleaved Noise-shaping SAR ADC based on CIFF Architecture with Redundancy Error Correction Technique 基于CIFF结构和冗余纠错技术的时间交错噪声整形SAR ADC
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-10-31 DOI: 10.5573/jsts.2021.21.5.297
Ki-hyun Kim, J. Baek, Jonghyun Kim, Hyungil Chae
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引用次数: 0
Inductorless Broadband Transimpedance Amplifier for 25-Gb/s NRZ and 50-Gb/s PAM-4 Operations in a 90-nm CMOS Technology 基于90纳米CMOS技术的25 gb /s NRZ和50 gb /s PAM-4操作的无电感宽带跨阻放大器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-10-31 DOI: 10.5573/jsts.2021.21.5.304
Jau‐Ji Jou, Tien-Tsorng Shih, Chih-Chen Peng, H. Hsu, Xuan-Yi Ye
{"title":"Inductorless Broadband Transimpedance Amplifier for 25-Gb/s NRZ and 50-Gb/s PAM-4 Operations in a 90-nm CMOS Technology","authors":"Jau‐Ji Jou, Tien-Tsorng Shih, Chih-Chen Peng, H. Hsu, Xuan-Yi Ye","doi":"10.5573/jsts.2021.21.5.304","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.5.304","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"227 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73550419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS Diodes under Cryogenic Temperature and High Magnetic Field Environment 低温高磁场环境下的CMOS二极管
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-10-31 DOI: 10.5573/jsts.2021.21.5.340
D. Shim
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引用次数: 1
An Electrical Stimulator IC with Chopped Pulse based Active Charge Balancing for Neural Interface Applications 一种用于神经接口的切碎脉冲有源电荷平衡电刺激集成电路
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-10-31 DOI: 10.5573/jsts.2021.21.5.322
Jin-Young Son, Hyouk-Kyu Cha
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引用次数: 0
Demonstration of Multi-layered Macaroni Filler for Back-Biasing-Assisted Erasing Configuration in 3D V-NAND 三维V-NAND中用于反向偏置辅助擦除结构的多层通心粉填料的演示
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-10-31 DOI: 10.5573/jsts.2021.21.5.334
Dae-Han Jung, Khwang-Sun Lee, Jun-Young Park
—Controlling the erase speed of a NAND flash is one of the challenges in memory technology. As the planar NAND flash has evolved to the vertically integrated gate-all-around (GAA), the number of stacks of word-lines (WL) was increased for better packing density. However, potential transfer through the silicon substrate or metal bit-line (BL) is insufficient with the increased number of stacks. Hence, we propose a novel V-NAND structure including multi-layered macaroni filler. The proposed macaroni filler is composed of a dielectric outer layer and a metallic core layer. The metallic core layer makes back-biasing is possible in V-NAND. As a result, erase speed can be improved without large modification of fabrication process or device layout.
控制NAND闪存的擦除速度是存储技术的挑战之一。随着平面NAND闪存向垂直集成栅极全能(GAA)技术的发展,为了获得更好的封装密度,需要增加字线(WL)堆叠数。然而,随着堆叠数量的增加,通过硅衬底或金属位线(BL)的电位传递不足。因此,我们提出了一种包含多层通心粉填料的新型V-NAND结构。所提出的通心粉填料由介电外层和金属芯层组成。金属芯层使得v型nand的背偏成为可能。因此,擦除速度可以提高,而无需对制造工艺或器件布局进行大的修改。
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引用次数: 1
2.4 GHz Low-power Receiver Front-end Employing I/Q Mixer with Current-reused Quadrature Transconductor for Bluetooth Low Energy Applications 采用I/Q混频器和电流复用正交转换器的2.4 GHz低功耗蓝牙接收机前端
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2021-10-31 DOI: 10.5573/jsts.2021.21.5.364
Sengjun Jo, Hyeonjun Kim, K. Kwon
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引用次数: 0
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Journal of Semiconductor Technology and Science
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