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Chemoresistive Gas Sensors for Food Quality Monitoring 食品质量监测用化学电阻式气体传感器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.244
S. Lee, Seung-Woo Kim, Gi-Baek Nam, T. Eom, Ho Won Jang
{"title":"Chemoresistive Gas Sensors for Food Quality Monitoring","authors":"S. Lee, Seung-Woo Kim, Gi-Baek Nam, T. Eom, Ho Won Jang","doi":"10.5573/jsts.2022.22.4.244","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.244","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"12 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84828387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Time-domain Continuous-time Delta-sigma Modulator using VCO-based Integrator and GRO-based Quantizer 使用基于vco的积分器和基于gro的量化器的时域连续δ - σ调制器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.259
Eunsang Lee, Jaeduk Han
{"title":"Time-domain Continuous-time Delta-sigma Modulator using VCO-based Integrator and GRO-based Quantizer","authors":"Eunsang Lee, Jaeduk Han","doi":"10.5573/jsts.2022.22.4.259","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.259","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"17 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81518660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Read Disturbance Tolerant Phase Change Memory System for CNN Inference Workloads 一种用于CNN推理工作负载的读干扰容忍度相变存储系统
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.216
Hyokeun Lee, Hyuk-Jae Lee, Hyun Kim
{"title":"A Read Disturbance Tolerant Phase Change Memory System for CNN Inference Workloads","authors":"Hyokeun Lee, Hyuk-Jae Lee, Hyun Kim","doi":"10.5573/jsts.2022.22.4.216","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.216","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"135 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86828651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantification of Substrate Current Caused by an Individual Trap at Different Locations and Energies, Prevailing on Si/SiO₂ Interface or Si Substrate of n-MOSFETs 在n- mosfet的Si/ sio2界面或Si衬底上，由不同位置和能量的单个陷阱引起的衬底电流的量化
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.234
Nosheen Shahzadi, S. Baeg
{"title":"Quantification of Substrate Current Caused by an Individual Trap at Different Locations and Energies, Prevailing on Si/SiO₂ Interface or Si Substrate of n-MOSFETs","authors":"Nosheen Shahzadi, S. Baeg","doi":"10.5573/jsts.2022.22.4.234","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.234","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"17 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89342745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor 隧道场效应晶体管中随功函数变化的量化电流效应研究
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.266
Kang-rock Lee, Sangwan Kim, Garam Kim, J. Kim
{"title":"Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor","authors":"Kang-rock Lee, Sangwan Kim, Garam Kim, J. Kim","doi":"10.5573/jsts.2022.22.4.266","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.266","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"93 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79531730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Architecture of Asynchronous Sorting Engine Module for ASIC Design 一种用于ASIC设计的异步排序引擎模块新架构
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.224
Myungchul Yoon
{"title":"A Novel Architecture of Asynchronous Sorting Engine Module for ASIC Design","authors":"Myungchul Yoon","doi":"10.5573/jsts.2022.22.4.224","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.224","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"193 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79707283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors 用于近程激光雷达传感器的180nm CMOS光电跨阻放大器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.275
Yu Hu, Ji-Eun Joo, Myung-Jae Lee, Sung-min Park
{"title":"An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors","authors":"Yu Hu, Ji-Eun Joo, Myung-Jae Lee, Sung-min Park","doi":"10.5573/jsts.2022.22.4.275","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.275","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"72 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75136014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An 80 dB Second-order Noise Shaping SAR ADC using Differential Integral Capacitors and Comparator with Voltage Gain Calibration 采用差分积分电容和电压增益校准比较器的80db二阶噪声整形SAR ADC
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-08-31 DOI: 10.5573/jsts.2022.22.4.205
Hoyong Jung, Neungin Jeon, Jimin Cheon, Young-Chan Jang
{"title":"An 80 dB Second-order Noise Shaping SAR ADC using Differential Integral Capacitors and Comparator with Voltage Gain Calibration","authors":"Hoyong Jung, Neungin Jeon, Jimin Cheon, Young-Chan Jang","doi":"10.5573/jsts.2022.22.4.205","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.4.205","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"123 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74840095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-6 GHz Noise-cancelling Balun-LNTA with Dual-band Q-enhanced LC Notch Filter for 5G New Radio Cellular Applications 基于双频q增强LC陷波滤波器的Sub-6 GHz降噪Balun-LNTA，用于5G新无线蜂窝应用
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.161
Donggu Lee, K. Kwon
{"title":"Sub-6 GHz Noise-cancelling Balun-LNTA with Dual-band Q-enhanced LC Notch Filter for 5G New Radio Cellular Applications","authors":"Donggu Lee, K. Kwon","doi":"10.5573/jsts.2022.22.3.161","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.161","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"4 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91135469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Study on SRAM Designs to Exploit the TEI-aware Ultra-low Power Techniques 基于tei感知超低功耗技术的SRAM设计研究
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.146
Seung-Yeong Lee, Jae-Hyoung Lee, Woojoo Lee, Younghyun Kim
{"title":"A Study on SRAM Designs to Exploit the TEI-aware Ultra-low Power Techniques","authors":"Seung-Yeong Lee, Jae-Hyoung Lee, Woojoo Lee, Younghyun Kim","doi":"10.5573/jsts.2022.22.3.146","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.3.146","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"15 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85779349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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