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A Quadrature Error Corrector for Aperiodic, Quarter-rate Data Strobe Signals in HBM3 Interfaces HBM3接口中非周期、四分之一速率数据频闪信号的正交纠错器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.177
Seon-Yeong Jo, Jinhyung Lee, Myeong-Jae Park, D. Jeong, Jaeha Kim
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引用次数: 0
A Compact 6-bit Phase Shifter in 65 nm RF CMOS Technology for ISM Band 一种适用于ISM波段的65nm RF CMOS技术的紧凑型6位移相器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.198
T.‐B. Ngo, Quang-Huy Do, Sang‐Woong Yoon
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引用次数: 1
High Resolution CMOS Frequency-to-digital Converter for a Fine Dust Sensor using a MEMS Resonator 用于微尘传感器的高分辨率CMOS频率-数字转换器,采用MEMS谐振器
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.168
Hyunwon Moon
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引用次数: 0
Nanoelectromechanical (NEM) Devices for Logic and Memory Applications 用于逻辑和存储应用的纳米机电(NEM)器件
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.188
H. Kwon, W. Choi
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引用次数: 0
Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current 用大GIDL电流代替弱行延长DRAM在77开尔文时的保持时间
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.133
Ho-Jun Kim, Won-Cheol Lee, Hong-June Park
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引用次数: 0
Investigation of Mechanical Stability during Electro-thermal Annealing in a 3D NAND Flash Memory String 三维NAND闪存串电热退火过程机械稳定性研究
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-06-30 DOI: 10.5573/jsts.2022.22.3.139
Yu-Jin Kim, Jun-Young Park
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引用次数: 1
Implementation and Performance Analysis of Elliptic Curve Cryptography using an Efficient Multiplier 椭圆曲线密码的高效乘法器实现及性能分析
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.53
R. J., E. N, N. Asokan
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引用次数: 1
Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier 用栅绝缘子堆调节隧道势垒的无掺杂隧道场效应晶体管
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.61
Min-Gyu Jeon, Kang-rock Lee, Sangwan Kim, Garam Kim, J. Kim
{"title":"Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier","authors":"Min-Gyu Jeon, Kang-rock Lee, Sangwan Kim, Garam Kim, J. Kim","doi":"10.5573/jsts.2022.22.2.61","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.61","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"78 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73921240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs 一种用于表征InP和GaAs HBTs大信号直流和交流性能的紧凑宏观建模方法
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.84
Lin Cheng, Hongliang Lu, Yuming Zhang, Yimen Zhang
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引用次数: 1
Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric Si₃N₄/TiO₂堆叠双栅电介质的凹槽栅AlGaN/GaN mosfet的制备与性能
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-04-30 DOI: 10.5573/jsts.2022.22.2.105
H. An, J. Bae, Sin‐Hyung Lee, I. Kang, S. Min, Sang-Ho Lee, Jin Park, G. Kim, Y. Yoon, J. Seo, M. Cho, Jaewon Jang
{"title":"Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric","authors":"H. An, J. Bae, Sin‐Hyung Lee, I. Kang, S. Min, Sang-Ho Lee, Jin Park, G. Kim, Y. Yoon, J. Seo, M. Cho, Jaewon Jang","doi":"10.5573/jsts.2022.22.2.105","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.2.105","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"20 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90210862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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Journal of Semiconductor Technology and Science
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