Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.381
Sang-Ho Lee, Y. Yoon, J. Seo, M. Cho, Jin Park, H. An, S. Min, G. Kim, I. Kang
{"title":"Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM","authors":"Sang-Ho Lee, Y. Yoon, J. Seo, M. Cho, Jin Park, H. An, S. Min, G. Kim, I. Kang","doi":"10.5573/jsts.2021.21.6.381","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.381","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"17 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89636138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.398
G. Kim, Y. Yoon, J. Seo, M. Cho, Sang-Ho Lee, Jin Park, H. An, S. Min, I. Kang
{"title":"Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure","authors":"G. Kim, Y. Yoon, J. Seo, M. Cho, Sang-Ho Lee, Jin Park, H. An, S. Min, I. Kang","doi":"10.5573/jsts.2021.21.6.398","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.398","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"56 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82693485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.459
E. Cho, S. Kwon
{"title":"Novel Process Technologies of a Deep-submicron MOSFET for the High Packing Density of Circuits","authors":"E. Cho, S. Kwon","doi":"10.5573/jsts.2021.21.6.459","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.459","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88320592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.412
Van-Cuong Nguyen, H. Cha, Hyungtak Kim
{"title":"Operation of NO₂ Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C","authors":"Van-Cuong Nguyen, H. Cha, Hyungtak Kim","doi":"10.5573/jsts.2021.21.6.412","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.412","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"258 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91325258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.427
Weizheng Wang, Yan Peng, Zuoting Ning, Peng Liu, Shuo Cai
{"title":"A Secure Scan Design based on Scan Scrambling by Pseudorandom Values and Circuit Itself","authors":"Weizheng Wang, Yan Peng, Zuoting Ning, Peng Liu, Shuo Cai","doi":"10.5573/jsts.2021.21.6.427","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.427","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"91 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73317703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.449
Ho-Jin Kim, Seunghoon Lee, Jun-Ho Boo, Jae-Hyuk Lee, Jun-Sang Park, Tai-Ji An, SungHan Do, Young-Jae Cho, Michael Choi, G. Ahn
{"title":"A 70 dB SNDR 10 MS/s 28 nm CMOS Nyquist SAR ADC with Capacitor Mismatch Calibration Reusing Segmented Reference Voltages","authors":"Ho-Jin Kim, Seunghoon Lee, Jun-Ho Boo, Jae-Hyuk Lee, Jun-Sang Park, Tai-Ji An, SungHan Do, Young-Jae Cho, Michael Choi, G. Ahn","doi":"10.5573/jsts.2021.21.6.449","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.449","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"38 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85991465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 32.2 GHz Full Adder Designed with TLE Method in a InP DHBT Technology","authors":"Yi Zhang, Xiaopeng Li, Youtao Zhang, Yu-feng Guo, Ying Zhang, Hao Gao","doi":"10.5573/jsts.2021.21.6.438","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.438","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"10 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87829872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.406
Yi-Ju Lee, Seong-Taek Cho
{"title":"Predominance of Carrier Diffusion in Determination of Data Retention in One-transistor Dynamic Random-access Memory","authors":"Yi-Ju Lee, Seong-Taek Cho","doi":"10.5573/jsts.2021.21.6.406","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.406","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"55 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84840121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.390
M. Cho, Sang-Ho Lee, H. An, Jin Park, S. Min, G. Kim, Y. Yoon, J. Seo, I. Kang
{"title":"Design and Analysis of DC/DC Boost Converter Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire","authors":"M. Cho, Sang-Ho Lee, H. An, Jin Park, S. Min, G. Kim, Y. Yoon, J. Seo, I. Kang","doi":"10.5573/jsts.2021.21.6.390","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.390","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"54 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83483253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.5573/jsts.2021.21.6.373
C. Cho, Hyuntai Kim
{"title":"Sensitivity-controllable P-N Diode Temperature Sensor with High-sensitivity","authors":"C. Cho, Hyuntai Kim","doi":"10.5573/jsts.2021.21.6.373","DOIUrl":"https://doi.org/10.5573/jsts.2021.21.6.373","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"40 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79304824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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