Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381478
M. Horibe, R. Sakamaki
The paper proposes new fabrication process for an Impedance Standard Substrate (ISS) for on-wafer measurements at microwave and millimeter-wave frequencies. Screen printing technology has provided coplanar waveguides (CPW) lines with low transmission loss and high precision contact repeatability at millimeter-wave frequency up to 110 GHz. The paper demonstrate capability of the screen printed CPW as an ISS for on-wafer measurements. Standard lines with seven different lengths were designed and fabricated by screen printing technology. In the paper, Multiline ThruReflect-Line (TRL) calibration was performed by using ISSs fabricated by both screen printing and conventional pleated technologies. Regarding calibration capability validation, contact repeatability performance was first tested, then, verification devices were measured. According to comparison results, results obtained by calibration of screen printing ISS are almost the same as results measured based on conventional ISS tech.
{"title":"Impedance standard substrate fabricated by screen printing technology","authors":"M. Horibe, R. Sakamaki","doi":"10.1109/ARFTG.2015.7381478","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381478","url":null,"abstract":"The paper proposes new fabrication process for an Impedance Standard Substrate (ISS) for on-wafer measurements at microwave and millimeter-wave frequencies. Screen printing technology has provided coplanar waveguides (CPW) lines with low transmission loss and high precision contact repeatability at millimeter-wave frequency up to 110 GHz. The paper demonstrate capability of the screen printed CPW as an ISS for on-wafer measurements. Standard lines with seven different lengths were designed and fabricated by screen printing technology. In the paper, Multiline ThruReflect-Line (TRL) calibration was performed by using ISSs fabricated by both screen printing and conventional pleated technologies. Regarding calibration capability validation, contact repeatability performance was first tested, then, verification devices were measured. According to comparison results, results obtained by calibration of screen printing ISS are almost the same as results measured based on conventional ISS tech.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132674741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381461
A. Sahu, V. Devabhaktuni, A. Lewandowski, P. Barmuta, T. M. Wallis, M. Shkunov, P. Aaen
This paper describes microwave characterization of coplanar waveguide (CPW) lines formed by ink-jet printed technology on flexible polyethylene terephthalate (PET) substrates. The reel-to-reel printing process uses inkjet printing as a precursor for 2μm copper plating, which allows significantly lowered resistances as compared to traditional inks. A multiline TRL calibration technique has been used to characterize the propagation constant and reflection coefficient of the CPW lines. With the aid of four sets of measurements at two identical labs, it is shown that the fabricated samples have contact repeatability, permitting redundant multiline calibrations.
{"title":"Microwave characterization of ink-jet printed CPW on PET substrates","authors":"A. Sahu, V. Devabhaktuni, A. Lewandowski, P. Barmuta, T. M. Wallis, M. Shkunov, P. Aaen","doi":"10.1109/ARFTG.2015.7381461","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381461","url":null,"abstract":"This paper describes microwave characterization of coplanar waveguide (CPW) lines formed by ink-jet printed technology on flexible polyethylene terephthalate (PET) substrates. The reel-to-reel printing process uses inkjet printing as a precursor for 2μm copper plating, which allows significantly lowered resistances as compared to traditional inks. A multiline TRL calibration technique has been used to characterize the propagation constant and reflection coefficient of the CPW lines. With the aid of four sets of measurements at two identical labs, it is shown that the fabricated samples have contact repeatability, permitting redundant multiline calibrations.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127150359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381469
M. Horibe
Metrological traceability is required for testing and spurious emission management. Even if above 110 GHz frequency, metrological traceability is universally important, however the system set-up and calibration method are as important as the metrology standards due to high cost and low stability / reproducibility for the measurement system and standards as compared to those in the microwave frequency range. In recent years, operation frequency of commercial vector network analyzers (VNA) reaches currently up to 1.6 THz. Key priorities for improvement of VNA measurement accuracy are waveguide interface performance, operation conditions, hardware set-up, calibration standards and methods. Then, measurement traceability and uncertainty, further verification process, including measurement comparison, are absolutely necessary for quality of measurements. The presentation introduces all key priority together with latest research achievements, then gives recommendation for accurate VNA measurement in Terahertz.
{"title":"Continuing challenge of improving measurement accuracy in terahertz vector network analyzers (INVITED) — The Taming of \"Terahertz vector network analyzers\"","authors":"M. Horibe","doi":"10.1109/ARFTG.2015.7381469","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381469","url":null,"abstract":"Metrological traceability is required for testing and spurious emission management. Even if above 110 GHz frequency, metrological traceability is universally important, however the system set-up and calibration method are as important as the metrology standards due to high cost and low stability / reproducibility for the measurement system and standards as compared to those in the microwave frequency range. In recent years, operation frequency of commercial vector network analyzers (VNA) reaches currently up to 1.6 THz. Key priorities for improvement of VNA measurement accuracy are waveguide interface performance, operation conditions, hardware set-up, calibration standards and methods. Then, measurement traceability and uncertainty, further verification process, including measurement comparison, are absolutely necessary for quality of measurements. The presentation introduces all key priority together with latest research achievements, then gives recommendation for accurate VNA measurement in Terahertz.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121875164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381476
A. Savin, V. G. Guba, O. N. Bykova
In this paper results of uncertainty analysis of coplanar waveguides (CPWs) parameters are shown in the presence of ambiguities in line geometry and material properties. Calculations are performed with unscented transformation (UT). Error bounds calculated with UT are compared with the results of Monte-Carlo simulation.
{"title":"Uncertainty analysis in coplanar waveguide with unscented transformation","authors":"A. Savin, V. G. Guba, O. N. Bykova","doi":"10.1109/ARFTG.2015.7381476","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381476","url":null,"abstract":"In this paper results of uncertainty analysis of coplanar waveguides (CPWs) parameters are shown in the presence of ambiguities in line geometry and material properties. Calculations are performed with unscented transformation (UT). Error bounds calculated with UT are compared with the results of Monte-Carlo simulation.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114224607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381466
J. Martens, E. Vayner, J. Tu
Time- and phase-coherent swept network analyzer measurements are increasingly important for everything from harmonic waveform reconstruction needs in power amplifier analysis to transient pulse response problems in radar and phased array applications and generic memory effect analysis in device characterization. Classically, there have been several solutions to these problems but these have often been slow or have required sometimes complicated reference-generation schemes to enable phase recovery. By employing a wide-IF digitizer in a sampling receiver along with a somewhat novel triggering/marking scheme, it is possible to perform synchronous complex measurements during a frequency or power sweep at 10s of μs/point sweep rates. This configuration is demonstrated with a waveform reconstruction experiment and with sensitive swept transient DUT measurements delineating thermal response differences of more than 1.5 dB and 15 degrees on a fast sweep timescale.
{"title":"Towards faster, swept, time-coherent transient network analyzer measurements","authors":"J. Martens, E. Vayner, J. Tu","doi":"10.1109/ARFTG.2015.7381466","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381466","url":null,"abstract":"Time- and phase-coherent swept network analyzer measurements are increasingly important for everything from harmonic waveform reconstruction needs in power amplifier analysis to transient pulse response problems in radar and phased array applications and generic memory effect analysis in device characterization. Classically, there have been several solutions to these problems but these have often been slow or have required sometimes complicated reference-generation schemes to enable phase recovery. By employing a wide-IF digitizer in a sampling receiver along with a somewhat novel triggering/marking scheme, it is possible to perform synchronous complex measurements during a frequency or power sweep at 10s of μs/point sweep rates. This configuration is demonstrated with a waveform reconstruction experiment and with sensitive swept transient DUT measurements delineating thermal response differences of more than 1.5 dB and 15 degrees on a fast sweep timescale.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130175159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381463
D. Root, R. M. Biernacki, M. Marcu, M. Koh, P. Tasker
This paper presents a powerful new method that generates a frequency-scalable nonlinear simulation model from single-frequency large-signal transistor X-parameter data. The method is based on a novel orthogonal identification (direct extraction) of current source and charge source contributions to the spectrally rich port currents under large-signal conditions. Explicit decomposition formulae, applied entirely in the frequency domain, are derived in terms of sensitivity functions at pairs of large-signal operating points related to one-another by time-reversal transformation. The method is applied and validated with respect to data from a measurement-based model of a pHEMT transistor. It is demonstrated that the scalable model can predict the nonlinear performance of the transistor over several orders of magnitude in frequency, all from X-parameters at a single fundamental frequency.
{"title":"Frequency-scalable nonlinear behavioral transistor model from single frequency X-parameters based on time-reversal transformation properties (INVITED)","authors":"D. Root, R. M. Biernacki, M. Marcu, M. Koh, P. Tasker","doi":"10.1109/ARFTG.2015.7381463","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381463","url":null,"abstract":"This paper presents a powerful new method that generates a frequency-scalable nonlinear simulation model from single-frequency large-signal transistor X-parameter data. The method is based on a novel orthogonal identification (direct extraction) of current source and charge source contributions to the spectrally rich port currents under large-signal conditions. Explicit decomposition formulae, applied entirely in the frequency domain, are derived in terms of sensitivity functions at pairs of large-signal operating points related to one-another by time-reversal transformation. The method is applied and validated with respect to data from a measurement-based model of a pHEMT transistor. It is demonstrated that the scalable model can predict the nonlinear performance of the transistor over several orders of magnitude in frequency, all from X-parameters at a single fundamental frequency.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124270761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381468
Julien Couvidat, G. P. Gibiino, G. Pailloncy, M. vanden Bossche, A. Ghiotto, D. Schreurs
This paper presents a compact set-up to perform automated measurements of RF PAs under envelope-tracking (ET) operation. In addition to RF signal generation and acquisition, it allows calibrated measurements of the baseband voltage and current at the supply terminal with up to 40 MHz bandwidth, enabling instantaneous efficiency measurements. The presented set-up is used to extract two different shaping tables, and to test ET operation with a 5 MHz WCDMA and a 20 MHz LTE signals at 838 MHz. The used devices are an InGaP/Silicon RF power amplifier (PA) from Skyworks and a high voltage extra fast complementary bipolar (XFCB) power modulator (PM) from Analog Devices.
{"title":"A compact measurement set-up for envelope-tracking RF PAs with calibrated sensing of baseband V/I at the supply terminal","authors":"Julien Couvidat, G. P. Gibiino, G. Pailloncy, M. vanden Bossche, A. Ghiotto, D. Schreurs","doi":"10.1109/ARFTG.2015.7381468","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381468","url":null,"abstract":"This paper presents a compact set-up to perform automated measurements of RF PAs under envelope-tracking (ET) operation. In addition to RF signal generation and acquisition, it allows calibrated measurements of the baseband voltage and current at the supply terminal with up to 40 MHz bandwidth, enabling instantaneous efficiency measurements. The presented set-up is used to extract two different shaping tables, and to test ET operation with a 5 MHz WCDMA and a 20 MHz LTE signals at 838 MHz. The used devices are an InGaP/Silicon RF power amplifier (PA) from Skyworks and a high voltage extra fast complementary bipolar (XFCB) power modulator (PM) from Analog Devices.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123833256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381458
Jun-Chau Chien, A. Niknejad
In this paper, on-chip temperature modulation is applied in a CMOS-based dielectric sensor for the determination of sample temperature coefficients in a microfluidic setting. System uncertainties are taken into account by a multi-step calibration with the use of on-chip metal-based switched-capacitors. Using de-ionized water as reference, the temperature coefficients of saline and methanol-water mixture are extracted at 17.5 GHz with temperature spanning from 32 ~ 37 °C.
{"title":"Sensor-on-CMOS dielectric characterization using temperature modulation","authors":"Jun-Chau Chien, A. Niknejad","doi":"10.1109/ARFTG.2015.7381458","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381458","url":null,"abstract":"In this paper, on-chip temperature modulation is applied in a CMOS-based dielectric sensor for the determination of sample temperature coefficients in a microfluidic setting. System uncertainties are taken into account by a multi-step calibration with the use of on-chip metal-based switched-capacitors. Using de-ionized water as reference, the temperature coefficients of saline and methanol-water mixture are extracted at 17.5 GHz with temperature spanning from 32 ~ 37 °C.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124372675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381467
K. Muhonen
With the ever increasing need for spectrum the mobile phones, specifications are tougher for spurious emissions. Harmonics can fall into bands that are used for other services so prior evaluation of those harmonics is critical in product development. An on-wafer harmonic bench is used for fast evaluation of material and designs without having to build a final product to predict what the harmonic performance will be. Harmonic measurements are not new; but high power (4 watts), on-wafer harmonic measurements present hurdles that have not been solved. Low passive intermodulation (PIM) components, probe selection, connector selection and bench configuration all play into building a measurement system with low enough system noise to be able to evaluate the state-of-the-art technologies for mobile applications.
{"title":"Hurdles to on-wafer harmonic measurements","authors":"K. Muhonen","doi":"10.1109/ARFTG.2015.7381467","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381467","url":null,"abstract":"With the ever increasing need for spectrum the mobile phones, specifications are tougher for spurious emissions. Harmonics can fall into bands that are used for other services so prior evaluation of those harmonics is critical in product development. An on-wafer harmonic bench is used for fast evaluation of material and designs without having to build a final product to predict what the harmonic performance will be. Harmonic measurements are not new; but high power (4 watts), on-wafer harmonic measurements present hurdles that have not been solved. Low passive intermodulation (PIM) components, probe selection, connector selection and bench configuration all play into building a measurement system with low enough system noise to be able to evaluate the state-of-the-art technologies for mobile applications.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124130862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/ARFTG.2015.7381479
Francisco J. Martinez-Rodriguez, P. Roblin, J. I. Martínez-López
Self-heating affects the RF performance of power transistors and must therefore be characterized for accurate device modeling. This paper presents an active loadpull (ALP) testbed which performs continuous wave measurements with the LSNA for arbitrary loads and substrate temperatures while jointly measuring the device die temperatures with an infrared sensor. Measurements are performed for a 15 W GaN HEMTs for 15, 25, 35 and 45 C substrate temperatures. The thermal resistance is extracted from the dissipated power and temperature data for fundamental loads spanning the entire Smith Chart. The quasi linear relation between the dissipated power and the device temperature increase measured for all loads verifies that a physical temperature is measured. The expected correlation between the dissipated power, output power and device temperature is also evidenced. This ALP testbed provides thus a wealth of joint loadpull, thermal and loadline data which should facilitate the extraction of an electrothermal device model directly from large-signal RF measurements.
自热会影响功率晶体管的射频性能，因此必须对其进行表征以进行精确的器件建模。本文提出了一种主动负载拉(ALP)试验台，该试验台使用LSNA对任意负载和衬底温度进行连续波测量，同时与红外传感器联合测量器件的芯片温度。在15、25、35和45℃衬底温度下对15w GaN hemt进行测量。热阻是从整个史密斯图中基本负载的耗散功率和温度数据中提取的。对所有负载测量的器件温升与耗散功率之间的准线性关系验证了测量到的物理温度。耗散功率、输出功率和器件温度之间的预期相关性也得到了证明。因此，该ALP试验台提供了丰富的联合负载拉，热和负载线数据，这将有助于直接从大信号射频测量中提取电热装置模型。
{"title":"Joint self-heating and RF large signal characterization","authors":"Francisco J. Martinez-Rodriguez, P. Roblin, J. I. Martínez-López","doi":"10.1109/ARFTG.2015.7381479","DOIUrl":"https://doi.org/10.1109/ARFTG.2015.7381479","url":null,"abstract":"Self-heating affects the RF performance of power transistors and must therefore be characterized for accurate device modeling. This paper presents an active loadpull (ALP) testbed which performs continuous wave measurements with the LSNA for arbitrary loads and substrate temperatures while jointly measuring the device die temperatures with an infrared sensor. Measurements are performed for a 15 W GaN HEMTs for 15, 25, 35 and 45 C substrate temperatures. The thermal resistance is extracted from the dissipated power and temperature data for fundamental loads spanning the entire Smith Chart. The quasi linear relation between the dissipated power and the device temperature increase measured for all loads verifies that a physical temperature is measured. The expected correlation between the dissipated power, output power and device temperature is also evidenced. This ALP testbed provides thus a wealth of joint loadpull, thermal and loadline data which should facilitate the extraction of an electrothermal device model directly from large-signal RF measurements.","PeriodicalId":170825,"journal":{"name":"2015 86th ARFTG Microwave Measurement Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130718293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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