Pub Date : 2026-01-06DOI: 10.1016/j.jeurceramsoc.2025.118119
Haohui Hao, Xiaomeng Fan, Xinlei Wang, Fang Ye, Jimei Xue
SiCf/Si3N4 composite is a promising structural wave-absorbing integrated composites, while the interphase damage caused by thermal expansion mismatch degrades its mechanical properties. By employing iBN-coated SiC fibers, a higher interfacial bonding strength between the fibers and the interphase can be achieved, thereby reducing the interphase damage in the composite. In this work, BN interphase with different thickness was deposited on the surface of iBN-coated SiC fibers. After the formation of multilayer BN interphase, the interfacial damage ratio decreased from 19 % to 3 %, and thus the tensile strength of the composites increased from 161 ± 10–196 ± 31 MPa. At the same time, with the change of intra-bundle fiber contact state, the minimum reflection coefficient of the composites decreased from −4.46 to −12.32 dB, resulting from the increase of the conduction loss.
{"title":"Optimization of interfacial zone microstructure of SiCf/Si3N4 composites containing in-situ formed BN coating","authors":"Haohui Hao, Xiaomeng Fan, Xinlei Wang, Fang Ye, Jimei Xue","doi":"10.1016/j.jeurceramsoc.2025.118119","DOIUrl":"10.1016/j.jeurceramsoc.2025.118119","url":null,"abstract":"<div><div>SiC<sub>f</sub>/Si<sub>3</sub>N<sub>4</sub> composite is a promising structural wave-absorbing integrated composites, while the interphase damage caused by thermal expansion mismatch degrades its mechanical properties. By employing iBN-coated SiC fibers, a higher interfacial bonding strength between the fibers and the interphase can be achieved, thereby reducing the interphase damage in the composite. In this work, BN interphase with different thickness was deposited on the surface of iBN-coated SiC fibers. After the formation of multilayer BN interphase, the interfacial damage ratio decreased from 19 % to 3 %, and thus the tensile strength of the composites increased from 161 ± 10–196 ± 31 MPa. At the same time, with the change of intra-bundle fiber contact state, the minimum reflection coefficient of the composites decreased from −4.46 to −12.32 dB, resulting from the increase of the conduction loss.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118119"},"PeriodicalIF":6.2,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
CaCu3Ti4O12 ceramics were synthesized using high–energy ball milling (HEBM) and conventional ball milling (CBM) methods. The HEBM powder produced fine, high–quality powder with improved reactivity, facilitating the formation of dense and uniform ceramic microstructures with fine grains ranging from ∼1.1–1.7 μm. Optimally sintered HEBM ceramics exhibited high ε′ of ∼3000–4000 and exceptionally low tanδ∼0.026–0.009 at 1 kHz. The ε′ of HEBM ceramics remained stable across a broad frequency range (100 Hz to 1 MHz) and demonstrated excellent temperature stability from −55 to 150 °C, fulfilling the X8R capacitor standard, while CBM ceramics exhibited strong temperature–dependent ε′. Additionally, HEBM ceramics displayed significantly improved nonlinear current–voltage behavior, with a high nonlinear coefficient of 24.1 and a breakdown strength over ten times higher than that of CBM ceramics. Impedance and X–ray photoelectron analyses confirmed enhanced dielectric and nonlinear properties resulted mainly from improved grain boundaries.
{"title":"Significantly enhanced dielectric and nonlinear electrical properties in CCTO ceramics prepared via high–energy ball milling with fine–grained IBLC microstructure","authors":"Kwanruthai Sankham , Jurimart Wongsricha , Sirion Srilarueang , Jutapol Jumpatam , Nutthakritta Phromviyo , Pornjuk Srepusharawoot , Prasit Thongbai","doi":"10.1016/j.jeurceramsoc.2026.118126","DOIUrl":"10.1016/j.jeurceramsoc.2026.118126","url":null,"abstract":"<div><div>CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> ceramics were synthesized using high–energy ball milling (HEBM) and conventional ball milling (CBM) methods. The HEBM powder produced fine, high–quality powder with improved reactivity, facilitating the formation of dense and uniform ceramic microstructures with fine grains ranging from ∼1.1–1.7 μm. Optimally sintered HEBM ceramics exhibited high ε′ of ∼3000–4000 and exceptionally low tanδ∼0.026–0.009 at 1 kHz. The ε′ of HEBM ceramics remained stable across a broad frequency range (100 Hz to 1 MHz) and demonstrated excellent temperature stability from −55 to 150 °C, fulfilling the X8R capacitor standard, while CBM ceramics exhibited strong temperature–dependent ε′. Additionally, HEBM ceramics displayed significantly improved nonlinear current–voltage behavior, with a high nonlinear coefficient of 24.1 and a breakdown strength over ten times higher than that of CBM ceramics. Impedance and X–ray photoelectron analyses confirmed enhanced dielectric and nonlinear properties resulted mainly from improved grain boundaries.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118126"},"PeriodicalIF":6.2,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In light of the mounting imperative for high heat dissipation packages for power devices, the DLP 3D printing technique was utilized as a preparatory measure for integrated embedded microfluidic SiCN ceramic substrates. The fabrication of SiCN composite ceramics with minimal shrinkage (25.6 ± 0.2 %) and elevated fracture toughness (4.1 ± 0.1 MPa·m1/2) was accomplished by optimizing the Si3N4 whiskers filler content within the hybrid filler. The critical thermal shock temperature difference of α-Si3N4/Si3N4w/SiCN ceramics to reach 730 °C, which is 119 °C higher than α-Si3N4/SiCN ceramics without Si3N4 whiskers (621 °C). Ceramics substrates with embedded microfluidic channels (diameter less than 467 μm) were prepared by optimizing fillers, and the connectivity, airtightness, and heat dissipation properties were tested and simulated separately. The results demonstrated excellent impermeability and heat dissipation properties. The study provides a viable technical solution to the issue of heat dissipation of electronic components under high-temperature working conditions.
{"title":"Fabrication of α-Si3N4/Si3N4w/SiCN ceramic substrate with embedded microchannel by DLP","authors":"Zhongya Zhang , Yongzhao Hou , Juhai Weng , Cheng Zhong , Jing Xue , Jiawei Jiang , Guangwu Wen , Xuefei Ma , Lijuan Zhang","doi":"10.1016/j.jeurceramsoc.2025.118120","DOIUrl":"10.1016/j.jeurceramsoc.2025.118120","url":null,"abstract":"<div><div>In light of the mounting imperative for high heat dissipation packages for power devices, the DLP 3D printing technique was utilized as a preparatory measure for integrated embedded microfluidic SiCN ceramic substrates. The fabrication of SiCN composite ceramics with minimal shrinkage (25.6 ± 0.2 %) and elevated fracture toughness (4.1 ± 0.1 MPa·m<sup>1/2</sup>) was accomplished by optimizing the Si<sub>3</sub>N<sub>4</sub> whiskers filler content within the hybrid filler. The critical thermal shock temperature difference of α-Si<sub>3</sub>N<sub>4</sub>/Si<sub>3</sub>N<sub>4w</sub>/SiCN ceramics to reach 730 °C, which is 119 °C higher than α-Si<sub>3</sub>N<sub>4</sub>/SiCN ceramics without Si<sub>3</sub>N<sub>4</sub> whiskers (621 °C). Ceramics substrates with embedded microfluidic channels (diameter less than 467 μm) were prepared by optimizing fillers, and the connectivity, airtightness, and heat dissipation properties were tested and simulated separately. The results demonstrated excellent impermeability and heat dissipation properties. The study provides a viable technical solution to the issue of heat dissipation of electronic components under high-temperature working conditions.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118120"},"PeriodicalIF":6.2,"publicationDate":"2026-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study reports the first fabrication of strontium feldspar-silicon carbide (SAS-SiC) composites, investigating the densification mechanism and potential as integrated absorption-storage materials for solar thermal power generation. Results indicate the composite ceramic with 40 wt% SAS (40SAS/SiC) achieves densification (bulk density: 2.96 g/cm3) with high thermal conductivity (25.91 W·m−1·K−1). The high density is attained via liquid-phase sintering, owing to the good compatibility between SAS and SiC and the reduction of liquid phase viscosity by Na2CO3. Furthermore, the material demonstrates excellent heat storage capacity (1104 kJ·kg−1, 1000℃) and solar absorptance (88.1 %). After 100 h of oxidation at 1100 °C, it exhibits mass gain (5.71 mg·cm−2). The sample shows merely 5 % reduction in bending strength after 50 thermal shock cycles. This resilience benefits from its high thermal conductivity and the transformation of SAS from the hexagonal phase to the monoclinic phase during thermal shock, the latter possessing a lower thermal expansion coefficient.
{"title":"Densification mechanism and thermal physical properties of strontium feldspar - silicon carbide ceramics for integrated absorption-storage materials","authors":"Saixi Qiu , Jianfeng Wu , Xiaohong Xu , Yaqiang Shen , Deng Zhang , Mingzhuo Ding","doi":"10.1016/j.jeurceramsoc.2026.118125","DOIUrl":"10.1016/j.jeurceramsoc.2026.118125","url":null,"abstract":"<div><div>This study reports the first fabrication of strontium feldspar-silicon carbide (SAS-SiC) composites, investigating the densification mechanism and potential as integrated absorption-storage materials for solar thermal power generation. Results indicate the composite ceramic with 40 wt% SAS (40SAS/SiC) achieves densification (bulk density: 2.96 g/cm<sup>3</sup>) with high thermal conductivity (25.91 W·m<sup>−1</sup>·K<sup>−1</sup>). The high density is attained via liquid-phase sintering, owing to the good compatibility between SAS and SiC and the reduction of liquid phase viscosity by Na<sub>2</sub>CO<sub>3</sub>. Furthermore, the material demonstrates excellent heat storage capacity (1104 kJ·kg<sup>−1</sup>, 1000℃) and solar absorptance (88.1 %). After 100 h of oxidation at 1100 °C, it exhibits mass gain (5.71 mg·cm<sup>−2</sup>). The sample shows merely 5 % reduction in bending strength after 50 thermal shock cycles. This resilience benefits from its high thermal conductivity and the transformation of SAS from the hexagonal phase to the monoclinic phase during thermal shock, the latter possessing a lower thermal expansion coefficient.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118125"},"PeriodicalIF":6.2,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lithium loss resulting from undesirable side reactions of reactive lithium-compounds with substrate materials during the synthesis of Ni-rich ternary lithium transition-metal oxides are investigated. NMC811 samples were synthesized in different reaction crucibles, starting from oxide precursors (Ni0.8Mn0.1Co0.1O) and LiOH. Post-mortem analysis of the crucibles by means of SEM-EDS and XRD, combined with structural and electrochemical characterization of the obtained cathode materials reveal a clear correlation between the final lithium to metal ratio in the cathode material and the chosen substrate material and exemplify the effect on the materials’ performance. It was determined that the commonly used ceramic oxides SiO2 and Al2O3 compete with the transition metal oxide precursor for lithiation at high temperature, resulting in high lithium losses, increased Ni2+/Li+ mixing and suboptimal electrochemical performance. In contrast, it is demonstrated that the occurrence of parasitic side reactions is greatly reduced in MgO and Au, resulting in materials with improved performance.
{"title":"On the sensitivity of ternary lithium-ion cathode materials to substrate-induced lithium loss during calcination","authors":"Siebe Coessens , Behnam Bahramian , Inge Bellemans , Tijl Crivits , Christophe Detavernier , Kim Verbeken","doi":"10.1016/j.jeurceramsoc.2025.118124","DOIUrl":"10.1016/j.jeurceramsoc.2025.118124","url":null,"abstract":"<div><div>Lithium loss resulting from undesirable side reactions of reactive lithium-compounds with substrate materials during the synthesis of Ni-rich ternary lithium transition-metal oxides are investigated. NMC811 samples were synthesized in different reaction crucibles, starting from oxide precursors (Ni<sub>0.8</sub>Mn<sub>0.1</sub>Co<sub>0.1</sub>O) and LiOH. Post-mortem analysis of the crucibles by means of SEM-EDS and XRD, combined with structural and electrochemical characterization of the obtained cathode materials reveal a clear correlation between the final lithium to metal ratio in the cathode material and the chosen substrate material and exemplify the effect on the materials’ performance. It was determined that the commonly used ceramic oxides SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> compete with the transition metal oxide precursor for lithiation at high temperature, resulting in high lithium losses, increased Ni<sup>2+</sup>/Li<sup>+</sup> mixing and suboptimal electrochemical performance. In contrast, it is demonstrated that the occurrence of parasitic side reactions is greatly reduced in MgO and Au, resulting in materials with improved performance.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118124"},"PeriodicalIF":6.2,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-02DOI: 10.1016/j.jeurceramsoc.2025.118122
Shengye Zhai , Na Ni , Weiwei Xiao , Hongxia Liang , Xiaohui Fan
In this work, flash sintering under an AC electric field was employed to co-sinter a multilayer structure consisting of a 20 mol% gadolinium doped ceria (GDC20) electrolyte with a (La0.6Sr0.4)0.99CoO3-δ (LSC64) cathode for solid oxide cell applications. A series current configuration where the electrical field is perpendicular to the layer interface was adopted and found to beneficial in co-sintering GDC20 and LSC64 layers with large conductivity differences. Optimized FS conditions allow to achieve full densification of the electrolyte while maintaining high porosity in the electrode without interfacial cracks and elemental interdiffusion. Preferential densification and grain growth of GDC were found to occur near its interface with the LSC layer, which may be related to the accelerated oxygen electrochemical reduction reaction at the interfacial area where the porous LSC64 layer, as a mixed ion-electron conductor, provides abundant three-phase reaction sites.
{"title":"Flash co-sintering of a solid oxide fuel cell electrolyte - electrode multilayers structure under an AC electric field","authors":"Shengye Zhai , Na Ni , Weiwei Xiao , Hongxia Liang , Xiaohui Fan","doi":"10.1016/j.jeurceramsoc.2025.118122","DOIUrl":"10.1016/j.jeurceramsoc.2025.118122","url":null,"abstract":"<div><div>In this work, flash sintering under an AC electric field was employed to co-sinter a multilayer structure consisting of a 20 mol% gadolinium doped ceria (GDC20) electrolyte with a (La<sub>0.6</sub>Sr<sub>0.4</sub>)<sub>0.99</sub>CoO<sub>3-δ</sub> (LSC64) cathode for solid oxide cell applications. A series current configuration where the electrical field is perpendicular to the layer interface was adopted and found to beneficial in co-sintering GDC20 and LSC64 layers with large conductivity differences. Optimized FS conditions allow to achieve full densification of the electrolyte while maintaining high porosity in the electrode without interfacial cracks and elemental interdiffusion. Preferential densification and grain growth of GDC were found to occur near its interface with the LSC layer, which may be related to the accelerated oxygen electrochemical reduction reaction at the interfacial area where the porous LSC64 layer, as a mixed ion-electron conductor, provides abundant three-phase reaction sites.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118122"},"PeriodicalIF":6.2,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145940026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-01DOI: 10.1016/j.jeurceramsoc.2025.118121
Gwang Min Park , Ji Ho Jeon , Jaebaek Ju , Jin-Sang Kim , Seung-Hyub Baek , Jeong Hwan Han , Seong Keun Kim
This study reports a strategy to enhance the thermoelectric performance of Bi2Te2.7Se0.3 (BTS) by introducing ultrathin In2O3 interfacial layers via atomic layer deposition (ALD). Conformal In2O3 coatings were preserved after spark plasma sintering, thereby suppressing grain growth. A small interfacial energy barrier (∼0.2 eV) was formed at the BTS/In2O3 interface, enabling carrier filtering that preferentially transmits high-energy electrons, thereby enhancing mobility. At the same time, the coatings suppressed Te volatilization during sintering, leading to reduced carrier concentration and increased Seebeck coefficient. Although electrical conductivity decreased, the power factor remained nearly unchanged, while total thermal conductivity was markedly reduced due to a lower electronic contribution. As a result, the 20-cycle In2O3-coated BTS achieved a maximum zT of 1.02 at 373 K, surpassing the pristine sample. These results highlight ALD-engineered interfacial barriers as an effective approach for carrier concentration control and thermoelectric performance optimization in bulk Bi2Te3-based materials.
{"title":"Carrier concentration control and thermoelectric enhancement of n-type Bi2Te3-based materials via atomic-layer-deposited In2O3 interfacial layers","authors":"Gwang Min Park , Ji Ho Jeon , Jaebaek Ju , Jin-Sang Kim , Seung-Hyub Baek , Jeong Hwan Han , Seong Keun Kim","doi":"10.1016/j.jeurceramsoc.2025.118121","DOIUrl":"10.1016/j.jeurceramsoc.2025.118121","url":null,"abstract":"<div><div>This study reports a strategy to enhance the thermoelectric performance of Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> (BTS) by introducing ultrathin In<sub>2</sub>O<sub>3</sub> interfacial layers via atomic layer deposition (ALD). Conformal In<sub>2</sub>O<sub>3</sub> coatings were preserved after spark plasma sintering, thereby suppressing grain growth. A small interfacial energy barrier (∼0.2 eV) was formed at the BTS/In<sub>2</sub>O<sub>3</sub> interface, enabling carrier filtering that preferentially transmits high-energy electrons, thereby enhancing mobility. At the same time, the coatings suppressed Te volatilization during sintering, leading to reduced carrier concentration and increased Seebeck coefficient. Although electrical conductivity decreased, the power factor remained nearly unchanged, while total thermal conductivity was markedly reduced due to a lower electronic contribution. As a result, the 20-cycle In<sub>2</sub>O<sub>3</sub>-coated BTS achieved a maximum <em>zT</em> of 1.02 at 373 K, surpassing the pristine sample. These results highlight ALD-engineered interfacial barriers as an effective approach for carrier concentration control and thermoelectric performance optimization in bulk Bi<sub>2</sub>Te<sub>3</sub>-based materials.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118121"},"PeriodicalIF":6.2,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-01DOI: 10.1016/j.jeurceramsoc.2025.118123
Chenggong Xiang , Zhiyong Liu , Pengrong Ren , Kun Guo , Zhiguo Wang , Longlong Shu
Pinpointing the intrinsic link between defects and conductivity in ABO3 perovskite solid ionic conductors is vital for engineering high-performance ones for electrochemical energy storage and conversion. In this work, the distribution of relaxation times (DRT) was harnessed to decipher the underlying mechanisms that defects governed conduction behavior in both grains and grain boundaries. It found that the lattice defects promoted the formation of flattened TiO6 octahedra, resulting in excellent grain conductivity. Accumulation of highly polarizable defect dipoles at grain boundary created a built-in electric field that obstructed ion transport and manifested as significant grain boundary impedance behavior. Elevated temperatures were capable of activating the aggregation-associated defect dipoles, which helped to lower the migration energy barrier at the grain boundaries and thus flattening the overall ion migration energy barrier. Consequently, the ionic conductivity at 600 ℃ (7.7 mS·cm−1) was nearly 7 times higher than that at 400 ℃ (1.19 mS·cm−1). This work uncovers the multifaceted roles of defects at grains and grain boundaries, offering new insights and a theoretical foundation for tailoring the ionic conductivity of solid-state conductors via defect engineering.
{"title":"Unraveling the defect-induced conduction mechanism in BNT-based ceramics for solid oxide fuel cells","authors":"Chenggong Xiang , Zhiyong Liu , Pengrong Ren , Kun Guo , Zhiguo Wang , Longlong Shu","doi":"10.1016/j.jeurceramsoc.2025.118123","DOIUrl":"10.1016/j.jeurceramsoc.2025.118123","url":null,"abstract":"<div><div>Pinpointing the intrinsic link between defects and conductivity in ABO<sub>3</sub> perovskite solid ionic conductors is vital for engineering high-performance ones for electrochemical energy storage and conversion. In this work, the distribution of relaxation times (DRT) was harnessed to decipher the underlying mechanisms that defects governed conduction behavior in both grains and grain boundaries. It found that the lattice defects promoted the formation of flattened TiO<sub>6</sub> octahedra, resulting in excellent grain conductivity. Accumulation of highly polarizable defect dipoles at grain boundary created a built-in electric field that obstructed ion transport and manifested as significant grain boundary impedance behavior. Elevated temperatures were capable of activating the aggregation-associated defect dipoles, which helped to lower the migration energy barrier at the grain boundaries and thus flattening the overall ion migration energy barrier. Consequently, the ionic conductivity at 600 ℃ (7.7 mS·cm<sup>−1</sup>) was nearly 7 times higher than that at 400 ℃ (1.19 mS·cm<sup>−1</sup>). This work uncovers the multifaceted roles of defects at grains and grain boundaries, offering new insights and a theoretical foundation for tailoring the ionic conductivity of solid-state conductors via defect engineering.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118123"},"PeriodicalIF":6.2,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-30DOI: 10.1016/j.jeurceramsoc.2025.118118
Yifei Yan , Chuanzhen Huang , Zhenyu Shi , Zhen Wang , Longhua Xu , Shuiquan Huang , Meina Qu , Zhengkai Xu , Dijia Zhang , Baosu Guo , Tianye Jin , Xiaodan Wang , Hanlian Liu , Dun Liu , Peng Yao
The fabrication of porous Si3N4/BN ceramics for high-temperature radomes via vat photopolymerization is hindered by excessive slurry viscosity, which restricts the recoating process, and by limited curing depth. To overcome these challenges, we developed a high-performance slurry using a synergistic strategy combining BN surface functionalization with optical modulation via SiO2. Ultrasonic-assisted hydrolysis and silane coupling significantly enhanced interfacial compatibility with the resin, reducing viscosity from 20.83 to 4.51 Pa·s at a shear rate of 30 s−1. Simultaneously, the incorporation of refractive-index-matched SiO2 effectively suppressed light scattering, thereby increasing curing depth and structural integrity. Furthermore, SiO2 regulated liquid-phase behavior during sintering to optimize the microstructure. The resulting ceramics exhibited an exceptional property balance: 42.14 % porosity, 68.2 MPa flexural strength, a dielectric constant of 2.56, and a loss tangent of 6.85 × 10−3. These metrics satisfy the stringent requirements for wave-transparent applications, offering a robust pathway for manufacturing complex-shaped components.
{"title":"Performance improvement of Si3N4/BN slurry and porous ceramics caused by the synergistic effect of BN surface functionalization and high light transmission of SiO2","authors":"Yifei Yan , Chuanzhen Huang , Zhenyu Shi , Zhen Wang , Longhua Xu , Shuiquan Huang , Meina Qu , Zhengkai Xu , Dijia Zhang , Baosu Guo , Tianye Jin , Xiaodan Wang , Hanlian Liu , Dun Liu , Peng Yao","doi":"10.1016/j.jeurceramsoc.2025.118118","DOIUrl":"10.1016/j.jeurceramsoc.2025.118118","url":null,"abstract":"<div><div>The fabrication of porous Si<sub>3</sub>N<sub>4</sub>/BN ceramics for high-temperature radomes via vat photopolymerization is hindered by excessive slurry viscosity, which restricts the recoating process, and by limited curing depth. To overcome these challenges, we developed a high-performance slurry using a synergistic strategy combining BN surface functionalization with optical modulation via SiO<sub>2</sub>. Ultrasonic-assisted hydrolysis and silane coupling significantly enhanced interfacial compatibility with the resin, reducing viscosity from 20.83 to 4.51 Pa·s at a shear rate of 30 s<sup>−1</sup>. Simultaneously, the incorporation of refractive-index-matched SiO<sub>2</sub> effectively suppressed light scattering, thereby increasing curing depth and structural integrity. Furthermore, SiO<sub>2</sub> regulated liquid-phase behavior during sintering to optimize the microstructure. The resulting ceramics exhibited an exceptional property balance: 42.14 % porosity, 68.2 MPa flexural strength, a dielectric constant of 2.56, and a loss tangent of 6.85 × 10<sup>−3</sup>. These metrics satisfy the stringent requirements for wave-transparent applications, offering a robust pathway for manufacturing complex-shaped components.</div></div>","PeriodicalId":17408,"journal":{"name":"Journal of The European Ceramic Society","volume":"46 7","pages":"Article 118118"},"PeriodicalIF":6.2,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145882145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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