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Excited States and Reactive Intermediates 激发态和反应中间体
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-007
A. Lever
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引用次数: 2
Morphology of SiC Epitaxial Layers Grown by Temperature Gradient Zone Melting (II) 温度梯度区熔炼生长SiC外延层的形貌(II)
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-004
N. Peev
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引用次数: 0
Surface Preparation of A3 IIB2 V Semiconductors (Cd3As2, Zn3As2, Cd3P2, Zn3P2) under Ultra-High Vacuum Conditions 超高真空条件下A3 iib2v半导体(Cd3As2, Zn3As2, Cd3P2, Zn3P2)的表面制备
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-010
A. Hupfer, S. Schulze, D. Hirsch, L. Żdanowicz
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引用次数: 0
X-ray Investigation of the Mechanism of Phase Transformation in Single Crystals of ZnS, Znx Cd1-x S and Znx Mn1-x S (I) ZnS、Znx Cd1-x S和Znx Mn1-x S单晶相变机理的x射线研究(I)
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-012
M. T. Sebastian, P. Krishna
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引用次数: 0
The Current Understanding of Epitaxial CVD Silicon Layer Doping in the Light of Modelling and Theory Development (IV) 从模型和理论发展看外延CVD硅层掺杂的现状(四)
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-005
H. Kühne
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引用次数: 0
Simulation oi Contrasts in X-ray Plane Wave Topographs of Quartz Crystals with Induced Growth Striations 具有诱导生长条纹的石英晶体x射线平面波形貌的模拟对比
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-015
J. Härtwig, K. Jäckel, V. Lerche
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引用次数: 0
Magnetic Properties oi tow-Dimensional Systems 二维系统的磁性
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-013
L. M. Falikov, J. Morán‐López
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引用次数: 0
Materials Sciences in Space 空间材料科学
Pub Date : 1987-12-31 DOI: 10.1007/978-3-642-82761-7
B. Feuerbacher, H. Hamacher, R. Naumann
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引用次数: 43
Zeitschrift für experimentelle und technische Kristallographie 实验和技术晶体学杂志
Pub Date : 1987-12-31 DOI: 10.1002/crat.2170191232
H. Neels
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引用次数: 0
Optical, X-ray, and Calorimetrie Studies of Phase Transitions in ND4BeF3 ND4BeF3相变的光学、x射线和量热研究
Pub Date : 1987-12-31 DOI: 10.1515/9783112485620-014
A. Waśkowska, A. Pietraszko, Z. Czapla
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引用次数: 0
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July 2019
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