Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969032
I. Ilev, R. Waynant, M. Ediger
We demonstrate broadband continuum UV spectra (190 to 450 nm) obtained by nonlinear frequency conversion of the fourth harmonic (266 nm) of a Q-switched Nd:YAG laser in UV multimode optical fibre. The UV broadband continuum spectrum generated in the single UV fiber can be applied for spectroscopic investigations, optical diagnostics and precise surgical procedures in laser medicine and biology.
{"title":"Ultraviolet broadband (190-450 nm) nonlinear frequency conversion in optical fibers for biomedical use","authors":"I. Ilev, R. Waynant, M. Ediger","doi":"10.1109/LEOS.2001.969032","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969032","url":null,"abstract":"We demonstrate broadband continuum UV spectra (190 to 450 nm) obtained by nonlinear frequency conversion of the fourth harmonic (266 nm) of a Q-switched Nd:YAG laser in UV multimode optical fibre. The UV broadband continuum spectrum generated in the single UV fiber can be applied for spectroscopic investigations, optical diagnostics and precise surgical procedures in laser medicine and biology.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"65 1","pages":"750-751 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80076142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.968969
M. Kondow, T. Kitatani, M. Aoki, S. Nakatsuka, M. Kudo
We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al/sub 0.3/Ga/sub 0.7/As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C.
{"title":"Improved crystallinity of GaInNAs by additional rapid thermal annealing (RTA)","authors":"M. Kondow, T. Kitatani, M. Aoki, S. Nakatsuka, M. Kudo","doi":"10.1109/LEOS.2001.968969","DOIUrl":"https://doi.org/10.1109/LEOS.2001.968969","url":null,"abstract":"We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al/sub 0.3/Ga/sub 0.7/As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"91 1","pages":"622-623 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77673099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.968900
P. Rabiei, W. Steier
Micro-resonators can be considered as the building blocks of integrated photonic systems. Various optical components may be fabricated using micro-ring resonators. Polymer material can be used for fabrication of micro-ring resonators. There are several advantages using polymers for the fabrication of micro-resonators. First the required refractive index contrast to achieve negligible radiation loss for a micro-resonator with a radius of 10 /spl mu/m is available in polymers. Second it is very easy to fabricate three dimensional photonic integrated circuits This is essential for vertical coupling to the micro-resonators. Also various materials are available so that one can easily achieve phase matching condition by using different materials for the waveguide and microresonator. This opens the door to achieve very high Q resonators using polymer. In this paper we describe the design and fabrication of the first micro-resonator using polymer materials.
{"title":"Micro-ring resonators using polymer materials","authors":"P. Rabiei, W. Steier","doi":"10.1109/LEOS.2001.968900","DOIUrl":"https://doi.org/10.1109/LEOS.2001.968900","url":null,"abstract":"Micro-resonators can be considered as the building blocks of integrated photonic systems. Various optical components may be fabricated using micro-ring resonators. Polymer material can be used for fabrication of micro-ring resonators. There are several advantages using polymers for the fabrication of micro-resonators. First the required refractive index contrast to achieve negligible radiation loss for a micro-resonator with a radius of 10 /spl mu/m is available in polymers. Second it is very easy to fabricate three dimensional photonic integrated circuits This is essential for vertical coupling to the micro-resonators. Also various materials are available so that one can easily achieve phase matching condition by using different materials for the waveguide and microresonator. This opens the door to achieve very high Q resonators using polymer. In this paper we describe the design and fabrication of the first micro-resonator using polymer materials.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"85 1","pages":"517-518 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81019591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969287
Ronald Skoog
Summary form only given. One class of solutions for meeting the needs of metropolitan networks is Gigabit Ethernet (1G and 10G), also called Optical Ethernet, networks. These networks consist of Layer 2/3 packet switches in a mesh topology, with Layer 2 being Gb or 10Gb Ethernet. The author examines the main capabilities and deficiencies of GbE technology, and provides a framework in which to address its potential.
{"title":"Gigabit Ethernet: Is it a disruptive technology?","authors":"Ronald Skoog","doi":"10.1109/LEOS.2001.969287","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969287","url":null,"abstract":"Summary form only given. One class of solutions for meeting the needs of metropolitan networks is Gigabit Ethernet (1G and 10G), also called Optical Ethernet, networks. These networks consist of Layer 2/3 packet switches in a mesh topology, with Layer 2 being Gb or 10Gb Ethernet. The author examines the main capabilities and deficiencies of GbE technology, and provides a framework in which to address its potential.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"40 1","pages":"287-288 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88456340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969005
Jian Wei, J. C. Dries, Hongsheng Wang, G. Olsen, S. Forrest
In this study, the double diffused FGR structure of a high-speed InGaAs/InP APD was optimized from both theoretical analysis and experimental results. A high-speed edge-breakdown-free APD with gain of more than 10 was demonstrated following the design rule. Noise of this APD was measured and analyzed incorporating the dead-space effect.
{"title":"Optimization of double diffused floating guarding ring InGaAs/InP avalanche photodiodes","authors":"Jian Wei, J. C. Dries, Hongsheng Wang, G. Olsen, S. Forrest","doi":"10.1109/LEOS.2001.969005","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969005","url":null,"abstract":"In this study, the double diffused FGR structure of a high-speed InGaAs/InP APD was optimized from both theoretical analysis and experimental results. A high-speed edge-breakdown-free APD with gain of more than 10 was demonstrated following the design rule. Noise of this APD was measured and analyzed incorporating the dead-space effect.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"30 1","pages":"697-698 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88512655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969224
S. Kobayashi, M. Hashimoto
We have developed an advanced multi bit rate optical burst-mode packet receiver. This receiver can handle four multiplexed bit rate NRZ signals independently of bit rate order and number. It will encourage the penetration of fibre to the home.
{"title":"A multibitrate optical burst-mode packet receiver","authors":"S. Kobayashi, M. Hashimoto","doi":"10.1109/LEOS.2001.969224","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969224","url":null,"abstract":"We have developed an advanced multi bit rate optical burst-mode packet receiver. This receiver can handle four multiplexed bit rate NRZ signals independently of bit rate order and number. It will encourage the penetration of fibre to the home.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"49 3 1","pages":"165-166 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77323635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969046
C. Chung, Hojoon Lee
We proposed a new fabrication method for more stable arc-induced long period grating. Experimental results and simulation results have shown the effects of grating period and arc time for arc-induced long period grating. LPFGs with this fabrication method can be used as optical devices for filtering applications, sensor applications and dispersion compensation applications.
{"title":"Wavelength characteristics of arc-induced long-period fiber grating by core and cladding diameter modulation","authors":"C. Chung, Hojoon Lee","doi":"10.1109/LEOS.2001.969046","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969046","url":null,"abstract":"We proposed a new fabrication method for more stable arc-induced long period grating. Experimental results and simulation results have shown the effects of grating period and arc time for arc-induced long period grating. LPFGs with this fabrication method can be used as optical devices for filtering applications, sensor applications and dispersion compensation applications.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"2014 1","pages":"778-779 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86475085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969100
M. Gokhale, F. Xia, J. Thomson, P. Studenkov, S. Forrest
Asymmetric twin-waveguide (ATG) technology wherein active and passive devices are formed in two separate waveguides, and light is coupled between them via a lateral taper, has proven to be a versatile integration platform for photonic integrated circuits. Here, we demonstrate a /spl lambda/=1.55 /spl mu/m wavelength, high-speed, high-efficiency photodetector made by integrating a spot-size converter with an evanescently coupled In/sub 0.53/Ga/sub 0.47/As absorption region. While several versions of waveguide photodetectors have been proposed to overcome the bandwidth-efficiency trade-off, the ATG design provides a simple means of fabrication with the possibility of monolithically integrating detectors with other optical components such as semiconductor optical amplifiers and in-plane waveguide filters.
{"title":"High quantum efficiency, 40 GHz InGaAs twin waveguide PIN photodetectors","authors":"M. Gokhale, F. Xia, J. Thomson, P. Studenkov, S. Forrest","doi":"10.1109/LEOS.2001.969100","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969100","url":null,"abstract":"Asymmetric twin-waveguide (ATG) technology wherein active and passive devices are formed in two separate waveguides, and light is coupled between them via a lateral taper, has proven to be a versatile integration platform for photonic integrated circuits. Here, we demonstrate a /spl lambda/=1.55 /spl mu/m wavelength, high-speed, high-efficiency photodetector made by integrating a spot-size converter with an evanescently coupled In/sub 0.53/Ga/sub 0.47/As absorption region. While several versions of waveguide photodetectors have been proposed to overcome the bandwidth-efficiency trade-off, the ATG design provides a simple means of fabrication with the possibility of monolithically integrating detectors with other optical components such as semiconductor optical amplifiers and in-plane waveguide filters.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"87 1","pages":"885-886 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87257927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969164
A. Armstrong, S. Killmeyerz, J. Yee, G. Uscategui, R. Deming, Taewon Jung, R. Heilman, H. Patterson, Y. Ro, D. Myers, L. Mack, Xiaofang Mug
A 12-channel 3.125 Gb/s VCSEL driver IC has been designed in a SiGe BiCMOS process technology. The IC consists of 12 VCSEL drivers, a set of DACs providing per-channel adjustment of modulation and bias currents, peaking depth and width, and overcurrent threshold, and a three-wire serial interface which allows access to the DACs as well as internal registers for eye safety shutdown and other functions. The driver IC addresses many of the manufacturing issues in very short reach (VSR) parallel optical modules.
{"title":"Design trends and challenges for parallel optical interconnect","authors":"A. Armstrong, S. Killmeyerz, J. Yee, G. Uscategui, R. Deming, Taewon Jung, R. Heilman, H. Patterson, Y. Ro, D. Myers, L. Mack, Xiaofang Mug","doi":"10.1109/LEOS.2001.969164","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969164","url":null,"abstract":"A 12-channel 3.125 Gb/s VCSEL driver IC has been designed in a SiGe BiCMOS process technology. The IC consists of 12 VCSEL drivers, a set of DACs providing per-channel adjustment of modulation and bias currents, peaking depth and width, and overcurrent threshold, and a three-wire serial interface which allows access to the DACs as well as internal registers for eye safety shutdown and other functions. The driver IC addresses many of the manufacturing issues in very short reach (VSR) parallel optical modules.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"10 1","pages":"44-45 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90392990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969228
A. Paraskevopoulos, H. Hensel, W. Molzow, K. Janiak, E. Suryaputra, H. Roehle, P. Wolfram, W. Ebert
Dry etched facets remain a very attractive task in the semiconductor laser diode fabrication, as they can potentially lead to on-wafer device fabrication including preliminary testing, allowing thus a substantial cost reduction. Chemically assisted ion beam etching (CAIBE) technique is commonly applied to this aim, as it allows for vertical sidewall etching combined with high etch rates. However, while on the GaAlAs/GaAs basis some quite convincing results were achieved (Unger et al., 1993), this seems not to be the case for the InGaAsP/InP laser devices to the same extent. Published results were obtained either at low temperature etching (5/spl deg/C) with IBr/sub 3/ as a chemical component (Eisele et al., 1996), or at higher temperatures (250-300/spl deg/C) with Cl/sub 2/ using multilayer masks or thick (700 nm) SiO/sub 2/ (Youtsey et al., 1994; Dzioba et al., 1993; Tsang et al., 1999). In this paper we present, to our knowledge for the first time, results on ridge waveguide (RW) lasers with dry etched laser facets using a simple photoresist mask, without any additional treatment after the lithographic exposure. We demonstrate that the fabricated devices show identical characteristics to those of lasers with cleaved facets.
{"title":"Fabrication of InGaAsP/InP ridge waveguide lasers with dry etched facets using chemically assisted ion beam etching and a simple photoresist mask","authors":"A. Paraskevopoulos, H. Hensel, W. Molzow, K. Janiak, E. Suryaputra, H. Roehle, P. Wolfram, W. Ebert","doi":"10.1109/LEOS.2001.969228","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969228","url":null,"abstract":"Dry etched facets remain a very attractive task in the semiconductor laser diode fabrication, as they can potentially lead to on-wafer device fabrication including preliminary testing, allowing thus a substantial cost reduction. Chemically assisted ion beam etching (CAIBE) technique is commonly applied to this aim, as it allows for vertical sidewall etching combined with high etch rates. However, while on the GaAlAs/GaAs basis some quite convincing results were achieved (Unger et al., 1993), this seems not to be the case for the InGaAsP/InP laser devices to the same extent. Published results were obtained either at low temperature etching (5/spl deg/C) with IBr/sub 3/ as a chemical component (Eisele et al., 1996), or at higher temperatures (250-300/spl deg/C) with Cl/sub 2/ using multilayer masks or thick (700 nm) SiO/sub 2/ (Youtsey et al., 1994; Dzioba et al., 1993; Tsang et al., 1999). In this paper we present, to our knowledge for the first time, results on ridge waveguide (RW) lasers with dry etched laser facets using a simple photoresist mask, without any additional treatment after the lithographic exposure. We demonstrate that the fabricated devices show identical characteristics to those of lasers with cleaved facets.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"25 1","pages":"173-174 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90427973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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