Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969312
N. Tansu, Ying-lan Chang, T. Takeuchi, D. Bour, S. Corzine, M. Tan, L. Mawst
Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very low threshold current density (J/sub th/ = 65 A/cm/sup 2/, L = 1500 /spl mu/m) and transparency current density (J/sub tr/ = 30 A/cm/sup 2/), at a wavelength of 1.17 /spl mu/m. External differential quantum efficiency (/spl eta//sub d/) as high as 56% has also been achieved for the short cavity (L = 500 /spl mu/m) devices.
{"title":"Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (/spl lambda/>1.17 /spl mu/m) quantum well lasers","authors":"N. Tansu, Ying-lan Chang, T. Takeuchi, D. Bour, S. Corzine, M. Tan, L. Mawst","doi":"10.1109/LEOS.2001.969312","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969312","url":null,"abstract":"Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very low threshold current density (J/sub th/ = 65 A/cm/sup 2/, L = 1500 /spl mu/m) and transparency current density (J/sub tr/ = 30 A/cm/sup 2/), at a wavelength of 1.17 /spl mu/m. External differential quantum efficiency (/spl eta//sub d/) as high as 56% has also been achieved for the short cavity (L = 500 /spl mu/m) devices.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"2 1","pages":"336-337 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79547868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969293
C. Lin, Junxiang Fu, J. Harris
We designed a new tunable filter with a top DBR structure of Al/sub 2/O/sub 3//GaAs and demonstrated a tunable filter using this design. Adjustable tuning characteristics were achieved by removing excess nitride, providing greater yield during the release process, as well as being able to achieve a flexible structure afterward. The mechanical and optical measurements both demonstrate realization of a narrow linewidth, broad tuning range optical filter.
{"title":"Widely tunable micromachined optical filter with adjustable tuning characteristics","authors":"C. Lin, Junxiang Fu, J. Harris","doi":"10.1109/LEOS.2001.969293","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969293","url":null,"abstract":"We designed a new tunable filter with a top DBR structure of Al/sub 2/O/sub 3//GaAs and demonstrated a tunable filter using this design. Adjustable tuning characteristics were achieved by removing excess nitride, providing greater yield during the release process, as well as being able to achieve a flexible structure afterward. The mechanical and optical measurements both demonstrate realization of a narrow linewidth, broad tuning range optical filter.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"22 1","pages":"298-299 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81960050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969219
W. Kaiser, G. Mohs, T. Wuth, R. Neuhauser, W. Rosenkranz, C. Glingener
In this paper, we investigate the maximum transmission distance using optical duobinary modulation in combination with Raman amplification without any inline amplifiers or dispersion compensating devices. We demonstrate 225 km error free transmission on standard single mode fiber (SSMF) which is, to the best of our knowledge, the longest reported distance for dispersion uncompensated 10 Gb/s repeaterless transmission experiments on SSMF.
{"title":"225 km repeaterless 10 Gb/s transmission over uncompensated SSMF using duobinary modulation and Raman amplification","authors":"W. Kaiser, G. Mohs, T. Wuth, R. Neuhauser, W. Rosenkranz, C. Glingener","doi":"10.1109/LEOS.2001.969219","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969219","url":null,"abstract":"In this paper, we investigate the maximum transmission distance using optical duobinary modulation in combination with Raman amplification without any inline amplifiers or dispersion compensating devices. We demonstrate 225 km error free transmission on standard single mode fiber (SSMF) which is, to the best of our knowledge, the longest reported distance for dispersion uncompensated 10 Gb/s repeaterless transmission experiments on SSMF.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"59 1","pages":"155-156 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91028196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.968930
G. Talli, A. Vickers, M. Adams
The simplest method to produce pulses in the picosecond range for applications in telecommunications is to use a gain-switched laser. There has been considerable interest in short pulse propagation in semiconductor optical amplifiers (SOAs), but to our knowledge little attention has been given to specific effects arising from the use of gain-switched pulses. In this paper we report the results of measurements of the propagation of such pulses in an SOA and compare them with results from a numerical model. The model is able to give good agreement with experiment for the characteristic distortion observed in the output pulse spectrum.
{"title":"Gain-switched laser pulse propagation in a semiconductor optical amplifier","authors":"G. Talli, A. Vickers, M. Adams","doi":"10.1109/LEOS.2001.968930","DOIUrl":"https://doi.org/10.1109/LEOS.2001.968930","url":null,"abstract":"The simplest method to produce pulses in the picosecond range for applications in telecommunications is to use a gain-switched laser. There has been considerable interest in short pulse propagation in semiconductor optical amplifiers (SOAs), but to our knowledge little attention has been given to specific effects arising from the use of gain-switched pulses. In this paper we report the results of measurements of the propagation of such pulses in an SOA and compare them with results from a numerical model. The model is able to give good agreement with experiment for the characteristic distortion observed in the output pulse spectrum.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"42 1","pages":"544-545 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89715829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969175
H. Fujita
The key concept of MEMS (micro electro mechanical systems) technologies is to extend the VLSI fabrication capability to realize three- dimensional micro systems which are composed of electrical, mechanical, chemical and optical elements. Using VLSI fabrication processes such as photolithography, film deposition and etching, it is possible to obtain sub-micrometer-precision structures in a large quantity with excellent alignment between each other. In addition, movable structures such as micro mirrors and switches can be made by micromachining processes.
{"title":"Research activities of optical MEMS in Japan","authors":"H. Fujita","doi":"10.1109/LEOS.2001.969175","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969175","url":null,"abstract":"The key concept of MEMS (micro electro mechanical systems) technologies is to extend the VLSI fabrication capability to realize three- dimensional micro systems which are composed of electrical, mechanical, chemical and optical elements. Using VLSI fabrication processes such as photolithography, film deposition and etching, it is possible to obtain sub-micrometer-precision structures in a large quantity with excellent alignment between each other. In addition, movable structures such as micro mirrors and switches can be made by micromachining processes.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"3 1","pages":"66-67 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88495017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969077
M. Emsley, O. Dosunmu, M. Unlu
We present RCE Si pin photodetectors capable of quantum efficiency of /spl sim/40% and bandwidth of /spl sim/10 GHz at 850 nm with a buried distributed Bragg reflector fabricated by means of a double-SOI technique. The reflecting wafers are commercially reproducible and have single crystalline silicon device layers for fabricating silicon RCE photodiodes with high bandwidth efficiencies as well as low dark current. These wafers are well suited for VLSI integration and are compatible with standard CMOS processing making them ideal for monolithic integration of receiver circuits with photodetectors.
{"title":"High-efficiency, 10 GHz bandwidth resonant-cavity-enhanced silicon photodetectors operating at 850 nm wavelength","authors":"M. Emsley, O. Dosunmu, M. Unlu","doi":"10.1109/LEOS.2001.969077","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969077","url":null,"abstract":"We present RCE Si pin photodetectors capable of quantum efficiency of /spl sim/40% and bandwidth of /spl sim/10 GHz at 850 nm with a buried distributed Bragg reflector fabricated by means of a double-SOI technique. The reflecting wafers are commercially reproducible and have single crystalline silicon device layers for fabricating silicon RCE photodiodes with high bandwidth efficiencies as well as low dark current. These wafers are well suited for VLSI integration and are compatible with standard CMOS processing making them ideal for monolithic integration of receiver circuits with photodetectors.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"109 1","pages":"839-840 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78057098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969280
M. Lončar, D. Nedeljkovic, T. Pearsall, J. Vučković, A. Scherer, S. Kuchinsky, D. Allan
We have experimentally obtained the dispersion diagram of the leaky modes in a planar photonic crystal waveguide for wavelengths from 1440 nm to 1590 nm. A small stop band around /spl lambda/=1500 nm is also detected. The experimental results are in very good agreement with our 3D FDTD calculations.
{"title":"Experimental characterization of dispersion properties of the leaky modes in planar photonic crystal waveguide","authors":"M. Lončar, D. Nedeljkovic, T. Pearsall, J. Vučković, A. Scherer, S. Kuchinsky, D. Allan","doi":"10.1109/LEOS.2001.969280","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969280","url":null,"abstract":"We have experimentally obtained the dispersion diagram of the leaky modes in a planar photonic crystal waveguide for wavelengths from 1440 nm to 1590 nm. A small stop band around /spl lambda/=1500 nm is also detected. The experimental results are in very good agreement with our 3D FDTD calculations.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"17 1","pages":"273-274 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75003801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969058
T. Kise, K. Hiraiwa, S. Koizumi, N. Yamanaka, M. Funabashi, A. Kasukawa
Summary form only given. We demonstrate high power L-band DFB laser diodes with an output power over 100mW even at the wavelength of 1625nm. To suppress further degradation of temperature characteristics, we adjust carrier confinement conditions, still keeping high slope efficiency. We also investigate wavelength dependence of characteristic temperature of threshold current over C- and L-band wavelength region. The active region of the fabricated laser is composed of a strain-compensated InGaAsP MQW-SCH.
{"title":"Over 100 mW high power operation of 1625 nm L-band DFB laser diodes","authors":"T. Kise, K. Hiraiwa, S. Koizumi, N. Yamanaka, M. Funabashi, A. Kasukawa","doi":"10.1109/LEOS.2001.969058","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969058","url":null,"abstract":"Summary form only given. We demonstrate high power L-band DFB laser diodes with an output power over 100mW even at the wavelength of 1625nm. To suppress further degradation of temperature characteristics, we adjust carrier confinement conditions, still keeping high slope efficiency. We also investigate wavelength dependence of characteristic temperature of threshold current over C- and L-band wavelength region. The active region of the fabricated laser is composed of a strain-compensated InGaAsP MQW-SCH.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"18 1","pages":"802-803 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75392944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969154
M. Birk
I will review the state-of-the art in technology for 40 Gbit/s high-speed electronics and optics. I will also try to point out technological challenges and tradeoffs, where applicable. Clearly, 40 Gbit/s must have a service or cost advantage in order to be deployed, so I will also talk about the economics from a big carrier's point of view.
{"title":"40 Gbit/s from a carrier's perspective","authors":"M. Birk","doi":"10.1109/LEOS.2001.969154","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969154","url":null,"abstract":"I will review the state-of-the art in technology for 40 Gbit/s high-speed electronics and optics. I will also try to point out technological challenges and tradeoffs, where applicable. Clearly, 40 Gbit/s must have a service or cost advantage in order to be deployed, so I will also talk about the economics from a big carrier's point of view.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"30 1","pages":"24-25 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77892859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-12DOI: 10.1109/LEOS.2001.969229
M. Kuzyk
We study the limits of susceptibilities as measured with hyper Rayleigh scattering (HRS). We find that octupolar molecules also obey the quantum sum rules, as predicted by the theory. All conceivable molecular engineering approaches, designed to break these limits, are most likely futile because the sum rules take into account all interactions that can be written by a potential energy function. As such, any molecule or system whose Hamiltonian is given by electromagnetic interactions will be bounded by the theory. Since the sum rules can not be violated (because such a violation is equivalent to a violation of the Schrodinger equation) perhaps the only fruitful avenues to approach are to consider slightly resonantly enhanced susceptibilities or molecules that go beyond the dipole approximation.
{"title":"Quantum limits of nonlinear susceptibilities, and beyond","authors":"M. Kuzyk","doi":"10.1109/LEOS.2001.969229","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969229","url":null,"abstract":"We study the limits of susceptibilities as measured with hyper Rayleigh scattering (HRS). We find that octupolar molecules also obey the quantum sum rules, as predicted by the theory. All conceivable molecular engineering approaches, designed to break these limits, are most likely futile because the sum rules take into account all interactions that can be written by a potential energy function. As such, any molecule or system whose Hamiltonian is given by electromagnetic interactions will be bounded by the theory. Since the sum rules can not be violated (because such a violation is equivalent to a violation of the Schrodinger equation) perhaps the only fruitful avenues to approach are to consider slightly resonantly enhanced susceptibilities or molecules that go beyond the dipole approximation.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"6 1","pages":"175-176 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78292873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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