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Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices n+ InGaN再生法非合金欧姆接触发展及其对AlGaN/GaN HEMT器件的影响分析
Microelectron. J.
Pub Date : 2023-03-01 DOI: 10.2139/ssrn.4359533
A. Toprak, E. Özbay
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引用次数: 1
A physics-based modeling method of THz Schottky diode for circuit simulation 太赫兹肖特基二极管电路仿真的物理建模方法
Microelectron. J.
Pub Date : 2023-01-01 DOI: 10.2139/ssrn.4368148
Weiheng Zhao, Yudi Zhao, M. Miao
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引用次数: 0
A 12-bit 1.25 GS/s RF sampling pipelined ADC using a bandwidth-expanded residue amplifier with bias-free gain-boost technique 一种12位1.25 GS/s射频采样管式ADC，采用扩频剩余放大器和无偏置增益增强技术
Microelectron. J.
Pub Date : 2022-12-01 DOI: 10.1016/j.mejo.2022.105611
Chenghao Zhang, Jiangbo Wei, Yihang Yang, Maliang Liu
{"title":"A 12-bit 1.25 GS/s RF sampling pipelined ADC using a bandwidth-expanded residue amplifier with bias-free gain-boost technique","authors":"Chenghao Zhang, Jiangbo Wei, Yihang Yang, Maliang Liu","doi":"10.1016/j.mejo.2022.105611","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105611","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"2 1","pages":"105611"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79776669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review 用于未来人工智能应用的神经形态计算系统硬件实现的神经形态设备的进展:综述
Microelectron. J.
Pub Date : 2022-11-01 DOI: 10.1016/j.mejo.2022.105634
J. Ajayan, D. Nirmal, B. K. Jebalin, Sivaramapanicker Sreejith
{"title":"Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review","authors":"J. Ajayan, D. Nirmal, B. K. Jebalin, Sivaramapanicker Sreejith","doi":"10.1016/j.mejo.2022.105634","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105634","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"33 1","pages":"105634"},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81989666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 33.33 Gb/s/wire pin-efficient 1.06 pJ/bit wireline transceiver based on CNRZ-5 for Chiplet in 28 nm CMOS 基于CNRZ-5的28nm芯片33.33 Gb/s线引脚效率1.06 pJ/bit有线收发器
Microelectron. J.
Pub Date : 2022-11-01 DOI: 10.1016/j.mejo.2022.105628
Ming-Shiang Lai, Genge Zhang, Fangxu Lv, Xuqiang Zheng, Heming Wang, Dongbin Lv, Chaolong Xu, Xingyun Qi
{"title":"A 33.33 Gb/s/wire pin-efficient 1.06 pJ/bit wireline transceiver based on CNRZ-5 for Chiplet in 28 nm CMOS","authors":"Ming-Shiang Lai, Genge Zhang, Fangxu Lv, Xuqiang Zheng, Heming Wang, Dongbin Lv, Chaolong Xu, Xingyun Qi","doi":"10.1016/j.mejo.2022.105628","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105628","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"42 1","pages":"105628"},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76273423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A very low-power discrete-time delta-sigma modulator for wireless body area network 一种用于无线体域网络的极低功耗离散时间δ - σ调制器
Microelectron. J.
Pub Date : 2022-11-01 DOI: 10.1016/j.mejo.2022.105633
Z. Khoshkam, A. Abrishamifar
{"title":"A very low-power discrete-time delta-sigma modulator for wireless body area network","authors":"Z. Khoshkam, A. Abrishamifar","doi":"10.1016/j.mejo.2022.105633","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105633","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"27 1","pages":"105633"},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78858055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 28V NMOS power switch and bootstrap driver with integrated PA gate driver 一个28V NMOS电源开关和带集成PA栅极驱动器的引导驱动器
Microelectron. J.
Pub Date : 2022-11-01 DOI: 10.1016/j.mejo.2022.105637
Honglin Xu, Hao Zhang, Junjie Wu
{"title":"A 28V NMOS power switch and bootstrap driver with integrated PA gate driver","authors":"Honglin Xu, Hao Zhang, Junjie Wu","doi":"10.1016/j.mejo.2022.105637","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105637","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"148 1","pages":"105637"},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85555508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 16-bit 2.5-MS/s SAR ADC with on-chip foreground calibration 带片上前景校准的16位2.5 ms /s SAR ADC
Microelectron. J.
Pub Date : 2022-10-01 DOI: 10.1016/j.mejo.2022.105618
Xiaowei Zhang, F. Qian, Jianxiong Xi, Tao Wang, Le-nian He
{"title":"A 16-bit 2.5-MS/s SAR ADC with on-chip foreground calibration","authors":"Xiaowei Zhang, F. Qian, Jianxiong Xi, Tao Wang, Le-nian He","doi":"10.1016/j.mejo.2022.105618","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105618","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"48 1","pages":"105618"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74149699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and implementation of LTCC coreless transformers for intelligent solid-state switch 智能固态开关用LTCC无铁芯变压器的设计与实现
Microelectron. J.
Pub Date : 2022-10-01 DOI: 10.1016/j.mejo.2022.105614
Yufang Lu, Zhiai Huang, Chun-hsiung Chen, Haihua Tang, Lei Shi, Yiqi Zhuang
{"title":"Design and implementation of LTCC coreless transformers for intelligent solid-state switch","authors":"Yufang Lu, Zhiai Huang, Chun-hsiung Chen, Haihua Tang, Lei Shi, Yiqi Zhuang","doi":"10.1016/j.mejo.2022.105614","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105614","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"15 1","pages":"105614"},"PeriodicalIF":0.0,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73302972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A comparative study on performance of junctionless Bulk SiGe and Si FinFET 无结体SiGe和Si FinFET性能的比较研究
Microelectron. J.
Pub Date : 2022-09-01 DOI: 10.1016/j.mejo.2022.105537
Xinlong Shi, Huiyong Hu, Y. Wang, Liming Wang, Ningning Zhang, Bin Wang, Maolong Yang, Lingyao Meng
{"title":"A comparative study on performance of junctionless Bulk SiGe and Si FinFET","authors":"Xinlong Shi, Huiyong Hu, Y. Wang, Liming Wang, Ningning Zhang, Bin Wang, Maolong Yang, Lingyao Meng","doi":"10.1016/j.mejo.2022.105537","DOIUrl":"https://doi.org/10.1016/j.mejo.2022.105537","url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"41 1","pages":"105537"},"PeriodicalIF":0.0,"publicationDate":"2022-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73006966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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