Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460449
T. Liao, C. Chiu, C. Kuan, Tsung-Yi Huang, Tsung-Yu Yang
This paper is demonstrated the effect of Ge interlayer and patterned substrate to form low resistance Ohmic contact of n-GaN. The Ge interlayer is acted as heavily n-type dopant atoms at the interface of metal and n-GaN to enhance carrier tunneling. The patterned substrate is designed to increase the annealing temperature at the interface of the metal and n-GaN. Contact resistances were derived from the plot of the measured resistance versus gap spacing by TLM (Transmission Line Model). After annealing at 400 °C for 5mins, It is shown that, Al (300nm)/Ti (30nm)/Ge (10nm)/ pit-patterned n-GaN substrate scheme exhibit ohmic contact behavior with a resistivity of 3.49×10-5 Ω-cm2. The low contact resistance is formed by Al (300nm)/Ti (30nm)/Ge (10nm)/pit-patterned n-GaN substrate scheme, and it is compare with Al (300nm)/Ti (30nm)/n-GaN substrate. Therefore, this results show that utilizing Ge interlayer and patterned substrate could serve as an important processing tool for forming low-resistance Ohmic contacts of n-GaN.
{"title":"Utilizing Ge interlayer and patterned substrate to improve the contact resistance of n-GaN","authors":"T. Liao, C. Chiu, C. Kuan, Tsung-Yi Huang, Tsung-Yu Yang","doi":"10.1109/INEC.2014.7460449","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460449","url":null,"abstract":"This paper is demonstrated the effect of Ge interlayer and patterned substrate to form low resistance Ohmic contact of n-GaN. The Ge interlayer is acted as heavily n-type dopant atoms at the interface of metal and n-GaN to enhance carrier tunneling. The patterned substrate is designed to increase the annealing temperature at the interface of the metal and n-GaN. Contact resistances were derived from the plot of the measured resistance versus gap spacing by TLM (Transmission Line Model). After annealing at 400 °C for 5mins, It is shown that, Al (300nm)/Ti (30nm)/Ge (10nm)/ pit-patterned n-GaN substrate scheme exhibit ohmic contact behavior with a resistivity of 3.49×10-5 Ω-cm2. The low contact resistance is formed by Al (300nm)/Ti (30nm)/Ge (10nm)/pit-patterned n-GaN substrate scheme, and it is compare with Al (300nm)/Ti (30nm)/n-GaN substrate. Therefore, this results show that utilizing Ge interlayer and patterned substrate could serve as an important processing tool for forming low-resistance Ohmic contacts of n-GaN.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115142301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460431
Satoshi Watanabe, B. Xiao
We have performed density functional calculations toward the microscopic understanding of tantalum oxide based resistive switching devices. In this review, we discuss the structures and electric properties of the conductive filaments in Cu/Ta2O5/Pt and Pt/TaOx/Pt resistive switching devices. We also discuss the migration behaviors of Cu and O ions in these devices.
{"title":"Review of our density functional study on the structures of conductive filaments and ion migration behaviors in tantalum oxide based resistive switching devices","authors":"Satoshi Watanabe, B. Xiao","doi":"10.1109/INEC.2014.7460431","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460431","url":null,"abstract":"We have performed density functional calculations toward the microscopic understanding of tantalum oxide based resistive switching devices. In this review, we discuss the structures and electric properties of the conductive filaments in Cu/Ta2O5/Pt and Pt/TaOx/Pt resistive switching devices. We also discuss the migration behaviors of Cu and O ions in these devices.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121219285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460418
T. Mineta
This paper reviews the progress of nano-machined dual AFM probes which have functions of molecular imaging and in-situ mechanical operation. Fabrication techniques based on self-align Si etching process provided twin AFM tips with narrow gap, which minimize the offset calibration while switching from one probe to another. Dual cantilevers with thermal and magneto-strictive thin film actuators have also been developed for individual vertical deflection control for switching the two probes. Since demands to mechanical measurements and operations have been increased in biological applications, we anticipate these new techniques to contribute in fundamental biology studies in molecular level.
{"title":"Dual AFM probe for imaging and in-situ mechanical operation","authors":"T. Mineta","doi":"10.1109/INEC.2014.7460418","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460418","url":null,"abstract":"This paper reviews the progress of nano-machined dual AFM probes which have functions of molecular imaging and in-situ mechanical operation. Fabrication techniques based on self-align Si etching process provided twin AFM tips with narrow gap, which minimize the offset calibration while switching from one probe to another. Dual cantilevers with thermal and magneto-strictive thin film actuators have also been developed for individual vertical deflection control for switching the two probes. Since demands to mechanical measurements and operations have been increased in biological applications, we anticipate these new techniques to contribute in fundamental biology studies in molecular level.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127316120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460324
W. Ho, Min-Chun Huang, Yi-Yu Lee, Zhong-Fu Hou, Jian-Jyun Liao
The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.
{"title":"Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing","authors":"W. Ho, Min-Chun Huang, Yi-Yu Lee, Zhong-Fu Hou, Jian-Jyun Liao","doi":"10.1109/INEC.2014.7460324","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460324","url":null,"abstract":"The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124300995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460322
Y. Honda, M. Nanba, K. Miyakawa, M. Kubota, N. Egami
A compact ultrahigh-sensitivity image sensor consisting of a Spindt-type field emitter array (FEA) equipped with an active-matrix drive circuit and a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated. The image sensor has a 640 × 480-pixel active-matrix Spindt-type FEA, which is equivalent to the VGA format. Experiments showed that the prototype sensor could obtain clear images with little noise under illumination on a level equivalent to moonlight, with sufficient resolution as a VGA image sensor while consuming far less power than current ultrahigh-sensitivity pickup tubes.
{"title":"Highly sensitive HARP image sensor with Spindt-type field emitter array","authors":"Y. Honda, M. Nanba, K. Miyakawa, M. Kubota, N. Egami","doi":"10.1109/INEC.2014.7460322","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460322","url":null,"abstract":"A compact ultrahigh-sensitivity image sensor consisting of a Spindt-type field emitter array (FEA) equipped with an active-matrix drive circuit and a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated. The image sensor has a 640 × 480-pixel active-matrix Spindt-type FEA, which is equivalent to the VGA format. Experiments showed that the prototype sensor could obtain clear images with little noise under illumination on a level equivalent to moonlight, with sufficient resolution as a VGA image sensor while consuming far less power than current ultrahigh-sensitivity pickup tubes.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122683157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460429
Yongxun Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara
The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.
{"title":"Experimental study of charge trapping type FinFET flash memory","authors":"Yongxun Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara","doi":"10.1109/INEC.2014.7460429","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460429","url":null,"abstract":"The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"67 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124101327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460423
Y. Omura, Shingo Sato
This paper uses the semi-microscopic theory to elucidate the effective diffusion coefficient of carriers in one-dimensional Si wire devices. The theoretical model assumes that the primary spectrum of the diffusion process of majority and minority carriers rules the diffusion process; a statistical assessment of the diffusion coefficient is performed based on quantum-mechanical analysis. The theory reveals that the diffusion coefficient drastically decreases as the cross-sectional area falls under the sub-10-nm range.
{"title":"Theoretical modeling for carrier diffusion coefficient of one-dimensional Si wires around room temperature","authors":"Y. Omura, Shingo Sato","doi":"10.1109/INEC.2014.7460423","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460423","url":null,"abstract":"This paper uses the semi-microscopic theory to elucidate the effective diffusion coefficient of carriers in one-dimensional Si wire devices. The theoretical model assumes that the primary spectrum of the diffusion process of majority and minority carriers rules the diffusion process; a statistical assessment of the diffusion coefficient is performed based on quantum-mechanical analysis. The theory reveals that the diffusion coefficient drastically decreases as the cross-sectional area falls under the sub-10-nm range.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125552485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460446
Masaki Sato, Xiang Yin, S. Kasai
Surface dependence of the nonlinear voltage transfer characteristic in the GaAs-based three-branch nanowire junction (TBJ) is investigated both theoretically and experimentally. A simple model considering the surface-potential-dependent carrier density in the channel reveals a clear relationship between the surface potential and the curvature of the bell-shaped transfer curve. Based on this model, we analyze the behavior of the TBJ with a local conductance modulation by focused light irradiation.
{"title":"Surface dependence of nonlinear characteristic in GaAs-based three-branch nanowire junctions","authors":"Masaki Sato, Xiang Yin, S. Kasai","doi":"10.1109/INEC.2014.7460446","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460446","url":null,"abstract":"Surface dependence of the nonlinear voltage transfer characteristic in the GaAs-based three-branch nanowire junction (TBJ) is investigated both theoretically and experimentally. A simple model considering the surface-potential-dependent carrier density in the channel reveals a clear relationship between the surface potential and the curvature of the bell-shaped transfer curve. Based on this model, we analyze the behavior of the TBJ with a local conductance modulation by focused light irradiation.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126034809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460320
I. Honma
A design of novel nanoelectrode materials based on nanoparticles, nanocarbons, graphenes, ionic liquids, nanosheets have been investigated for the high power & high energy density lithium ion batteries. The high performance batteries can be applied to electric vehicles, solar cell back-ups as well as renewable electrical grid systems.
{"title":"Applications of nanoelectrodes for high power and high energy density lithium ion batteries","authors":"I. Honma","doi":"10.1109/INEC.2014.7460320","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460320","url":null,"abstract":"A design of novel nanoelectrode materials based on nanoparticles, nanocarbons, graphenes, ionic liquids, nanosheets have been investigated for the high power & high energy density lithium ion batteries. The high performance batteries can be applied to electric vehicles, solar cell back-ups as well as renewable electrical grid systems.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"72 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126613066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460424
S. Hashimoto, Hiroki Kosugiyama, K. Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, K. Ohmori, Takanobu Watanabe
We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.
{"title":"Impact of image force effect on gate-all-around Schottky barrier tunnel FET","authors":"S. Hashimoto, Hiroki Kosugiyama, K. Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, K. Ohmori, Takanobu Watanabe","doi":"10.1109/INEC.2014.7460424","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460424","url":null,"abstract":"We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129733355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：