Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460449
T. Liao, C. Chiu, C. Kuan, Tsung-Yi Huang, Tsung-Yu Yang
This paper is demonstrated the effect of Ge interlayer and patterned substrate to form low resistance Ohmic contact of n-GaN. The Ge interlayer is acted as heavily n-type dopant atoms at the interface of metal and n-GaN to enhance carrier tunneling. The patterned substrate is designed to increase the annealing temperature at the interface of the metal and n-GaN. Contact resistances were derived from the plot of the measured resistance versus gap spacing by TLM (Transmission Line Model). After annealing at 400 °C for 5mins, It is shown that, Al (300nm)/Ti (30nm)/Ge (10nm)/ pit-patterned n-GaN substrate scheme exhibit ohmic contact behavior with a resistivity of 3.49×10-5 Ω-cm2. The low contact resistance is formed by Al (300nm)/Ti (30nm)/Ge (10nm)/pit-patterned n-GaN substrate scheme, and it is compare with Al (300nm)/Ti (30nm)/n-GaN substrate. Therefore, this results show that utilizing Ge interlayer and patterned substrate could serve as an important processing tool for forming low-resistance Ohmic contacts of n-GaN.
{"title":"Utilizing Ge interlayer and patterned substrate to improve the contact resistance of n-GaN","authors":"T. Liao, C. Chiu, C. Kuan, Tsung-Yi Huang, Tsung-Yu Yang","doi":"10.1109/INEC.2014.7460449","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460449","url":null,"abstract":"This paper is demonstrated the effect of Ge interlayer and patterned substrate to form low resistance Ohmic contact of n-GaN. The Ge interlayer is acted as heavily n-type dopant atoms at the interface of metal and n-GaN to enhance carrier tunneling. The patterned substrate is designed to increase the annealing temperature at the interface of the metal and n-GaN. Contact resistances were derived from the plot of the measured resistance versus gap spacing by TLM (Transmission Line Model). After annealing at 400 °C for 5mins, It is shown that, Al (300nm)/Ti (30nm)/Ge (10nm)/ pit-patterned n-GaN substrate scheme exhibit ohmic contact behavior with a resistivity of 3.49×10-5 Ω-cm2. The low contact resistance is formed by Al (300nm)/Ti (30nm)/Ge (10nm)/pit-patterned n-GaN substrate scheme, and it is compare with Al (300nm)/Ti (30nm)/n-GaN substrate. Therefore, this results show that utilizing Ge interlayer and patterned substrate could serve as an important processing tool for forming low-resistance Ohmic contacts of n-GaN.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115142301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460431
Satoshi Watanabe, B. Xiao
We have performed density functional calculations toward the microscopic understanding of tantalum oxide based resistive switching devices. In this review, we discuss the structures and electric properties of the conductive filaments in Cu/Ta2O5/Pt and Pt/TaOx/Pt resistive switching devices. We also discuss the migration behaviors of Cu and O ions in these devices.
{"title":"Review of our density functional study on the structures of conductive filaments and ion migration behaviors in tantalum oxide based resistive switching devices","authors":"Satoshi Watanabe, B. Xiao","doi":"10.1109/INEC.2014.7460431","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460431","url":null,"abstract":"We have performed density functional calculations toward the microscopic understanding of tantalum oxide based resistive switching devices. In this review, we discuss the structures and electric properties of the conductive filaments in Cu/Ta2O5/Pt and Pt/TaOx/Pt resistive switching devices. We also discuss the migration behaviors of Cu and O ions in these devices.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121219285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460418
T. Mineta
This paper reviews the progress of nano-machined dual AFM probes which have functions of molecular imaging and in-situ mechanical operation. Fabrication techniques based on self-align Si etching process provided twin AFM tips with narrow gap, which minimize the offset calibration while switching from one probe to another. Dual cantilevers with thermal and magneto-strictive thin film actuators have also been developed for individual vertical deflection control for switching the two probes. Since demands to mechanical measurements and operations have been increased in biological applications, we anticipate these new techniques to contribute in fundamental biology studies in molecular level.
{"title":"Dual AFM probe for imaging and in-situ mechanical operation","authors":"T. Mineta","doi":"10.1109/INEC.2014.7460418","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460418","url":null,"abstract":"This paper reviews the progress of nano-machined dual AFM probes which have functions of molecular imaging and in-situ mechanical operation. Fabrication techniques based on self-align Si etching process provided twin AFM tips with narrow gap, which minimize the offset calibration while switching from one probe to another. Dual cantilevers with thermal and magneto-strictive thin film actuators have also been developed for individual vertical deflection control for switching the two probes. Since demands to mechanical measurements and operations have been increased in biological applications, we anticipate these new techniques to contribute in fundamental biology studies in molecular level.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127316120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460429
Yongxun Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara
The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.
{"title":"Experimental study of charge trapping type FinFET flash memory","authors":"Yongxun Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara","doi":"10.1109/INEC.2014.7460429","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460429","url":null,"abstract":"The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"67 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124101327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460324
W. Ho, Min-Chun Huang, Yi-Yu Lee, Zhong-Fu Hou, Jian-Jyun Liao
The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.
{"title":"Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing","authors":"W. Ho, Min-Chun Huang, Yi-Yu Lee, Zhong-Fu Hou, Jian-Jyun Liao","doi":"10.1109/INEC.2014.7460324","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460324","url":null,"abstract":"The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124300995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460322
Y. Honda, M. Nanba, K. Miyakawa, M. Kubota, N. Egami
A compact ultrahigh-sensitivity image sensor consisting of a Spindt-type field emitter array (FEA) equipped with an active-matrix drive circuit and a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated. The image sensor has a 640 × 480-pixel active-matrix Spindt-type FEA, which is equivalent to the VGA format. Experiments showed that the prototype sensor could obtain clear images with little noise under illumination on a level equivalent to moonlight, with sufficient resolution as a VGA image sensor while consuming far less power than current ultrahigh-sensitivity pickup tubes.
{"title":"Highly sensitive HARP image sensor with Spindt-type field emitter array","authors":"Y. Honda, M. Nanba, K. Miyakawa, M. Kubota, N. Egami","doi":"10.1109/INEC.2014.7460322","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460322","url":null,"abstract":"A compact ultrahigh-sensitivity image sensor consisting of a Spindt-type field emitter array (FEA) equipped with an active-matrix drive circuit and a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated. The image sensor has a 640 × 480-pixel active-matrix Spindt-type FEA, which is equivalent to the VGA format. Experiments showed that the prototype sensor could obtain clear images with little noise under illumination on a level equivalent to moonlight, with sufficient resolution as a VGA image sensor while consuming far less power than current ultrahigh-sensitivity pickup tubes.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122683157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460423
Y. Omura, Shingo Sato
This paper uses the semi-microscopic theory to elucidate the effective diffusion coefficient of carriers in one-dimensional Si wire devices. The theoretical model assumes that the primary spectrum of the diffusion process of majority and minority carriers rules the diffusion process; a statistical assessment of the diffusion coefficient is performed based on quantum-mechanical analysis. The theory reveals that the diffusion coefficient drastically decreases as the cross-sectional area falls under the sub-10-nm range.
{"title":"Theoretical modeling for carrier diffusion coefficient of one-dimensional Si wires around room temperature","authors":"Y. Omura, Shingo Sato","doi":"10.1109/INEC.2014.7460423","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460423","url":null,"abstract":"This paper uses the semi-microscopic theory to elucidate the effective diffusion coefficient of carriers in one-dimensional Si wire devices. The theoretical model assumes that the primary spectrum of the diffusion process of majority and minority carriers rules the diffusion process; a statistical assessment of the diffusion coefficient is performed based on quantum-mechanical analysis. The theory reveals that the diffusion coefficient drastically decreases as the cross-sectional area falls under the sub-10-nm range.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125552485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460325
T. Mabuchi, T. Tokumasu
We have investigated the transport phenomena of hydronium ions and water molecules in the nanostructure of hydrated Nafion membrane by systematically changing the hydration level using classical molecular dynamics simulations. The new empirical valence bond (EVB) model is developed in order to improve the description of proton mobility in both aqueous and Nafion environments. The new EVB model predicts a significantly enhanced transport in comparison with previous hopping models as well as the classical hydronium diffusion, which largely improves the agreement with the available experimental data. We have determined diffusion coefficients of hydronium ions and water molecules in hydrated Nafion membrane as a function of hydration level to investigate the impact of the Grotthuss mechanism on the proton transport property. Proton hopping mechanism was found to become more significant at higher hydration levels.
{"title":"Atomistic study of proton hopping mechanism in hydrated Nafion membrane","authors":"T. Mabuchi, T. Tokumasu","doi":"10.1109/INEC.2014.7460325","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460325","url":null,"abstract":"We have investigated the transport phenomena of hydronium ions and water molecules in the nanostructure of hydrated Nafion membrane by systematically changing the hydration level using classical molecular dynamics simulations. The new empirical valence bond (EVB) model is developed in order to improve the description of proton mobility in both aqueous and Nafion environments. The new EVB model predicts a significantly enhanced transport in comparison with previous hopping models as well as the classical hydronium diffusion, which largely improves the agreement with the available experimental data. We have determined diffusion coefficients of hydronium ions and water molecules in hydrated Nafion membrane as a function of hydration level to investigate the impact of the Grotthuss mechanism on the proton transport property. Proton hopping mechanism was found to become more significant at higher hydration levels.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125362836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460440
H. Koops, H. Fukuda
Anomalous charge transport in closely packed 2-4 nm-diameter metal nanocrystals is modeled using a cluster of indirect excitons produced among polarized metal particles. The conductivity originates from charge transfer via overlapping orbits among adjacent particles, and electron-hole liquid is expected from predicted high densities of electrons and holes, allowing a giant current carrying capacity. The Bose-Hubbard phase diagram and an inter-exciton distance shorter than the de Broglie wavelength suggests the possibility of a electron-hole Bardeen-Cooper-Schrieffer-like condensate, where a net current flow can be attributed to the annihilation of electron-hole pairs.
{"title":"Giant current density via indirect exciton orbit overlapping in polarized nano-granular materials","authors":"H. Koops, H. Fukuda","doi":"10.1109/INEC.2014.7460440","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460440","url":null,"abstract":"Anomalous charge transport in closely packed 2-4 nm-diameter metal nanocrystals is modeled using a cluster of indirect excitons produced among polarized metal particles. The conductivity originates from charge transfer via overlapping orbits among adjacent particles, and electron-hole liquid is expected from predicted high densities of electrons and holes, allowing a giant current carrying capacity. The Bose-Hubbard phase diagram and an inter-exciton distance shorter than the de Broglie wavelength suggests the possibility of a electron-hole Bardeen-Cooper-Schrieffer-like condensate, where a net current flow can be attributed to the annihilation of electron-hole pairs.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121925602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460456
W. Ho, Po-Hung Tsai, Chia-Min Chang, Hong-Jhang Syu, Ching-Fuh Lin
Photovoltaic performance of a thin-film silicon solar cell based on light-trapping enhanced and surface-recombination reduced using an optimization of metal-assisted chemical etching (MACE) and TiO2 passivation was demonstrated. The silver nanoparticles were used as etched mask in MACE process to obtain a nanoporous silicon surface layer. The optical reflectance, dark and photovoltaic current-voltage, external quantum efficiency as a function of the MACE times are measured and compared. Significant improving efficiency of 38% was obtained for the cell with 10-second MACE time and 15-nm-thick TiO2 passivation.
{"title":"Performance enhancement of thin-film silicon solar cells with nanoporous surface structure and TiO2 passivation layer based on optimal light trapping and surface recombination reducing","authors":"W. Ho, Po-Hung Tsai, Chia-Min Chang, Hong-Jhang Syu, Ching-Fuh Lin","doi":"10.1109/INEC.2014.7460456","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460456","url":null,"abstract":"Photovoltaic performance of a thin-film silicon solar cell based on light-trapping enhanced and surface-recombination reduced using an optimization of metal-assisted chemical etching (MACE) and TiO2 passivation was demonstrated. The silver nanoparticles were used as etched mask in MACE process to obtain a nanoporous silicon surface layer. The optical reflectance, dark and photovoltaic current-voltage, external quantum efficiency as a function of the MACE times are measured and compared. Significant improving efficiency of 38% was obtained for the cell with 10-second MACE time and 15-nm-thick TiO2 passivation.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122068283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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