Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460325
T. Mabuchi, T. Tokumasu
We have investigated the transport phenomena of hydronium ions and water molecules in the nanostructure of hydrated Nafion membrane by systematically changing the hydration level using classical molecular dynamics simulations. The new empirical valence bond (EVB) model is developed in order to improve the description of proton mobility in both aqueous and Nafion environments. The new EVB model predicts a significantly enhanced transport in comparison with previous hopping models as well as the classical hydronium diffusion, which largely improves the agreement with the available experimental data. We have determined diffusion coefficients of hydronium ions and water molecules in hydrated Nafion membrane as a function of hydration level to investigate the impact of the Grotthuss mechanism on the proton transport property. Proton hopping mechanism was found to become more significant at higher hydration levels.
{"title":"Atomistic study of proton hopping mechanism in hydrated Nafion membrane","authors":"T. Mabuchi, T. Tokumasu","doi":"10.1109/INEC.2014.7460325","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460325","url":null,"abstract":"We have investigated the transport phenomena of hydronium ions and water molecules in the nanostructure of hydrated Nafion membrane by systematically changing the hydration level using classical molecular dynamics simulations. The new empirical valence bond (EVB) model is developed in order to improve the description of proton mobility in both aqueous and Nafion environments. The new EVB model predicts a significantly enhanced transport in comparison with previous hopping models as well as the classical hydronium diffusion, which largely improves the agreement with the available experimental data. We have determined diffusion coefficients of hydronium ions and water molecules in hydrated Nafion membrane as a function of hydration level to investigate the impact of the Grotthuss mechanism on the proton transport property. Proton hopping mechanism was found to become more significant at higher hydration levels.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125362836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460440
H. Koops, H. Fukuda
Anomalous charge transport in closely packed 2-4 nm-diameter metal nanocrystals is modeled using a cluster of indirect excitons produced among polarized metal particles. The conductivity originates from charge transfer via overlapping orbits among adjacent particles, and electron-hole liquid is expected from predicted high densities of electrons and holes, allowing a giant current carrying capacity. The Bose-Hubbard phase diagram and an inter-exciton distance shorter than the de Broglie wavelength suggests the possibility of a electron-hole Bardeen-Cooper-Schrieffer-like condensate, where a net current flow can be attributed to the annihilation of electron-hole pairs.
{"title":"Giant current density via indirect exciton orbit overlapping in polarized nano-granular materials","authors":"H. Koops, H. Fukuda","doi":"10.1109/INEC.2014.7460440","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460440","url":null,"abstract":"Anomalous charge transport in closely packed 2-4 nm-diameter metal nanocrystals is modeled using a cluster of indirect excitons produced among polarized metal particles. The conductivity originates from charge transfer via overlapping orbits among adjacent particles, and electron-hole liquid is expected from predicted high densities of electrons and holes, allowing a giant current carrying capacity. The Bose-Hubbard phase diagram and an inter-exciton distance shorter than the de Broglie wavelength suggests the possibility of a electron-hole Bardeen-Cooper-Schrieffer-like condensate, where a net current flow can be attributed to the annihilation of electron-hole pairs.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121925602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460456
W. Ho, Po-Hung Tsai, Chia-Min Chang, Hong-Jhang Syu, Ching-Fuh Lin
Photovoltaic performance of a thin-film silicon solar cell based on light-trapping enhanced and surface-recombination reduced using an optimization of metal-assisted chemical etching (MACE) and TiO2 passivation was demonstrated. The silver nanoparticles were used as etched mask in MACE process to obtain a nanoporous silicon surface layer. The optical reflectance, dark and photovoltaic current-voltage, external quantum efficiency as a function of the MACE times are measured and compared. Significant improving efficiency of 38% was obtained for the cell with 10-second MACE time and 15-nm-thick TiO2 passivation.
{"title":"Performance enhancement of thin-film silicon solar cells with nanoporous surface structure and TiO2 passivation layer based on optimal light trapping and surface recombination reducing","authors":"W. Ho, Po-Hung Tsai, Chia-Min Chang, Hong-Jhang Syu, Ching-Fuh Lin","doi":"10.1109/INEC.2014.7460456","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460456","url":null,"abstract":"Photovoltaic performance of a thin-film silicon solar cell based on light-trapping enhanced and surface-recombination reduced using an optimization of metal-assisted chemical etching (MACE) and TiO2 passivation was demonstrated. The silver nanoparticles were used as etched mask in MACE process to obtain a nanoporous silicon surface layer. The optical reflectance, dark and photovoltaic current-voltage, external quantum efficiency as a function of the MACE times are measured and compared. Significant improving efficiency of 38% was obtained for the cell with 10-second MACE time and 15-nm-thick TiO2 passivation.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122068283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460444
Md Nur Kutubul Alam, M. Islam, Md Raifqul Islam
In this study the ballistic performance of III-V on insulator (XOI) and “junction less XOI” (JLXOI) nFET are investigated and compared by NEGF formalism, taking In0.3Ga0.7Sb as channel material. At 15nm gate length and 0.5nm EOT of gate dielectric the JLXOI shows significant improvement in threshold voltage (Vt) and ION with a fine tuned IOFF. Also the subthreshold slope (SS) reduced from 82.35mV/dec to 68.088mV/dec along with imporoved DIBL performance and simplified fabrication process.
{"title":"Short channel InGaSb-on-insulator FET: With and without junctions","authors":"Md Nur Kutubul Alam, M. Islam, Md Raifqul Islam","doi":"10.1109/INEC.2014.7460444","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460444","url":null,"abstract":"In this study the ballistic performance of III-V on insulator (XOI) and “junction less XOI” (JLXOI) nFET are investigated and compared by NEGF formalism, taking In0.3Ga0.7Sb as channel material. At 15nm gate length and 0.5nm EOT of gate dielectric the JLXOI shows significant improvement in threshold voltage (Vt) and ION with a fine tuned IOFF. Also the subthreshold slope (SS) reduced from 82.35mV/dec to 68.088mV/dec along with imporoved DIBL performance and simplified fabrication process.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123579471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460421
S. Lam, M. Chan
Copper metal gate has been introduced in logic CMOS processes starting from the 45-nm technology node. With the skin depth of about 270 nm at 60 GHz for copper, the DC end-to-end resistance of the copper gate electrode is found to be Rdc ≈ 9 Ω for a 45-nm MOSFET with W/L = 30 and it is a good estimation of the actual effective resistance Rac with less than 1% error. Rac of copper-gate electrode with rectangular cross-sectional designs is investigated with skin effect consideration. Design guidelines are suggested for device optimization of nanoscale metal-gate MOSFETs for millimeter-wave integrated circuits.
{"title":"Metal-gate resistance with skin effect consideration in nanoscale MOSFETs for millimeter-wave ICs","authors":"S. Lam, M. Chan","doi":"10.1109/INEC.2014.7460421","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460421","url":null,"abstract":"Copper metal gate has been introduced in logic CMOS processes starting from the 45-nm technology node. With the skin depth of about 270 nm at 60 GHz for copper, the DC end-to-end resistance of the copper gate electrode is found to be Rdc ≈ 9 Ω for a 45-nm MOSFET with W/L = 30 and it is a good estimation of the actual effective resistance Rac with less than 1% error. Rac of copper-gate electrode with rectangular cross-sectional designs is investigated with skin effect consideration. Design guidelines are suggested for device optimization of nanoscale metal-gate MOSFETs for millimeter-wave integrated circuits.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114845556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460447
Anand Kumar, M. Parihar, A. Kranti
In this work, we investigate the behavior of an Ultra Low Power (ULP) composite transistor in conventional inversion mode (INV) and junctionless (JL) topologies. JL ULP transistor shows enhanced on-to-off current ratio and lower leakage current at elevated temperatures. JL ULP inverter designed with composite transistor shows enhanced noise margin. The work demonstrates new opportunities for realizing future ULP circuits with junctionless transistor.
{"title":"Junctionless composite transistor for Ultra Low Power applications","authors":"Anand Kumar, M. Parihar, A. Kranti","doi":"10.1109/INEC.2014.7460447","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460447","url":null,"abstract":"In this work, we investigate the behavior of an Ultra Low Power (ULP) composite transistor in conventional inversion mode (INV) and junctionless (JL) topologies. JL ULP transistor shows enhanced on-to-off current ratio and lower leakage current at elevated temperatures. JL ULP inverter designed with composite transistor shows enhanced noise margin. The work demonstrates new opportunities for realizing future ULP circuits with junctionless transistor.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116654332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460425
S. Aspera, H. Kasai, Y. Tamai, N. Awaya
Computational materials design® (CMD®) has been proven to be a very powerful tool for developing novel materials through obtaining relevant understanding of the basic principles underlying a system. Among others, realization of the switching mechanism in resistance random access memory (RRAM) devices has been an interesting field. Here, we propose a mechanism of resistive switching in RRAM based on the change in the electronic properties of the transition metal oxide (TMO) layer through the occurrence of rowed oxygen vacancies.
{"title":"Computational materials design®: Realization of the switching mechanism in RRAM","authors":"S. Aspera, H. Kasai, Y. Tamai, N. Awaya","doi":"10.1109/INEC.2014.7460425","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460425","url":null,"abstract":"Computational materials design® (CMD®) has been proven to be a very powerful tool for developing novel materials through obtaining relevant understanding of the basic principles underlying a system. Among others, realization of the switching mechanism in resistance random access memory (RRAM) devices has been an interesting field. Here, we propose a mechanism of resistive switching in RRAM based on the change in the electronic properties of the transition metal oxide (TMO) layer through the occurrence of rowed oxygen vacancies.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115230432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460415
D. Akai
Epitaxial stacked structure on Si substrates attracts much attention to sensors and actuator applications using functional material such as ferroelectrics, pyroelectrics and piezoelectrics since characteristics of those materials depend on crystallinity and crystal orientation. The epitaxial γ-Al2O3 films on Si substrates are suitable for above applications, which exhibit desirable features such as chemical and physical stability and good interface characteristics with Si. In this paper, recent our progress of ferroelectric MEMS sensors using epitaxial PZT thin films on the epitaxial γ-Al2O3/Si structure was reported.
{"title":"Si integrated ferroelectric MEMS sensors using epitaxial PZT thin films on γ-Al2O3/Si substrates","authors":"D. Akai","doi":"10.1109/INEC.2014.7460415","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460415","url":null,"abstract":"Epitaxial stacked structure on Si substrates attracts much attention to sensors and actuator applications using functional material such as ferroelectrics, pyroelectrics and piezoelectrics since characteristics of those materials depend on crystallinity and crystal orientation. The epitaxial γ-Al2O3 films on Si substrates are suitable for above applications, which exhibit desirable features such as chemical and physical stability and good interface characteristics with Si. In this paper, recent our progress of ferroelectric MEMS sensors using epitaxial PZT thin films on the epitaxial γ-Al2O3/Si structure was reported.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127453485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460434
B. Magyari-Kope, Liang Zhao, K. Kamiya, M. Yang, K. Shiraishi, Y. Nishi
To explain the observed device characteristics of binary metal oxide based resistive random access memory (RRAM) modules, filamentary models have been proposed. Ab initio methods were applied to study conductive filamentary structures characteristic to the “ON” state and the atomistic description of the rupturing/dissolution process into the “OFF” state. We review the implications on the electronic structure and energetics of conductive filament channels formation and discuss the interplay between the ionic and electronic transport mechanisms.
{"title":"Review on simulation of filamentary switching in binary metal oxide based RRAM devices","authors":"B. Magyari-Kope, Liang Zhao, K. Kamiya, M. Yang, K. Shiraishi, Y. Nishi","doi":"10.1109/INEC.2014.7460434","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460434","url":null,"abstract":"To explain the observed device characteristics of binary metal oxide based resistive random access memory (RRAM) modules, filamentary models have been proposed. Ab initio methods were applied to study conductive filamentary structures characteristic to the “ON” state and the atomistic description of the rupturing/dissolution process into the “OFF” state. We review the implications on the electronic structure and energetics of conductive filament channels formation and discuss the interplay between the ionic and electronic transport mechanisms.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"306S 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128220626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460435
O. Voskoboynikov
A general theoretical description of the physical response of dispersive ensembles of semiconductor nano-sized objects of complex geometries, material compositions, and spatial distributions has been developed recently. We present a brief review on some recent results of our simulation of the absorption cross section of dispersive ensembles of ZnTe/CdSe core/shell quantum dots, optical characteristics of ensembles of triple concentric GaAs/AlGaAs nano-rings, and diamagnetic response of ensembles of wobbled InAs/GaAs quantum rings. Simulated by us the actual responses are in a good agreement with experimental data.
{"title":"Recent development in simulation and multivariate statistical analysis of physical characteristics of dispersive ensembles of semiconductor nano-sized objects: A brief review","authors":"O. Voskoboynikov","doi":"10.1109/INEC.2014.7460435","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460435","url":null,"abstract":"A general theoretical description of the physical response of dispersive ensembles of semiconductor nano-sized objects of complex geometries, material compositions, and spatial distributions has been developed recently. We present a brief review on some recent results of our simulation of the absorption cross section of dispersive ensembles of ZnTe/CdSe core/shell quantum dots, optical characteristics of ensembles of triple concentric GaAs/AlGaAs nano-rings, and diamagnetic response of ensembles of wobbled InAs/GaAs quantum rings. Simulated by us the actual responses are in a good agreement with experimental data.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124427341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：