Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460454
S. Kasai
Stochastic resonance (SR), in which response of a system is optimized or enhanced by adding noise, is electronically caused using nonlinear electron devices, such as comparator, semiconductor nanowire FET, and their networks. The unique behavior of the phenomenon is analyzed and understood in terms of signal processing techniques. The positive role of the variation in the nanodevice network in terms of SR is also mentioned.
{"title":"Stochastic resonance and related phenomena in nonlinear electron nanodevices","authors":"S. Kasai","doi":"10.1109/INEC.2014.7460454","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460454","url":null,"abstract":"Stochastic resonance (SR), in which response of a system is optimized or enhanced by adding noise, is electronically caused using nonlinear electron devices, such as comparator, semiconductor nanowire FET, and their networks. The unique behavior of the phenomenon is analyzed and understood in terms of signal processing techniques. The positive role of the variation in the nanodevice network in terms of SR is also mentioned.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115145090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460453
Yao-Jen Lee, B. Tsai, Ta-Chun Cho, F. Hsueh, P. Sung, C. Lai, C. Luo, T. Chao
Low temperature microwave annealing (MWA) for IC processing is promising. In this study, using microwave annealing for dopant activation and thermal stability of the high-k/metal gate is investigated. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. The flat band voltage shift of metal gate was suppressed due to the low temperature process. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated by using low temperature MWA. In addition, the short channel effects in n & pMOSFETs annealed by MWA can be also improved due to the suppression of dopant diffusion and stabilization of EOT.
{"title":"Low-temperature microwave annealing processes for future IC fabrication","authors":"Yao-Jen Lee, B. Tsai, Ta-Chun Cho, F. Hsueh, P. Sung, C. Lai, C. Luo, T. Chao","doi":"10.1109/INEC.2014.7460453","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460453","url":null,"abstract":"Low temperature microwave annealing (MWA) for IC processing is promising. In this study, using microwave annealing for dopant activation and thermal stability of the high-k/metal gate is investigated. Implanted species, such as phosphorus, arsenic, and boron, can also be well-activated and diffusionless in Si after microwave annealing. The flat band voltage shift of metal gate was suppressed due to the low temperature process. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated by using low temperature MWA. In addition, the short channel effects in n & pMOSFETs annealed by MWA can be also improved due to the suppression of dopant diffusion and stabilization of EOT.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116334236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460432
K. Konishi, M. Kuwata-Gonokami
Symmetry of material plays a crucial role in the polarization sensitive optical phenomena; therefore it is important to employ well-designed artificial nanostructures for developing devices for polarization control. We have been developing methods of circularly polarized light generation using such artificial nanostrucutres. In this presentation, we show the recent progress of our study for controls of circularly polarized light emission from chiral photonic nanostrucutres and second-harmonic generation (SHG) with triangular metal hole arrays.
{"title":"Review: Controlling circularly-polarized emission and second-harmonic generation with artificial nanostructures","authors":"K. Konishi, M. Kuwata-Gonokami","doi":"10.1109/INEC.2014.7460432","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460432","url":null,"abstract":"Symmetry of material plays a crucial role in the polarization sensitive optical phenomena; therefore it is important to employ well-designed artificial nanostructures for developing devices for polarization control. We have been developing methods of circularly polarized light generation using such artificial nanostrucutres. In this presentation, we show the recent progress of our study for controls of circularly polarized light emission from chiral photonic nanostrucutres and second-harmonic generation (SHG) with triangular metal hole arrays.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123450123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460319
T. Soga, Kosuke Ezaka, Tomoyuki Yamamura, Takuma Yasufuku, N. Kishi
Dye-sensitized solar cells were fabricated on flexible substrate from TiO2 nanoparticles by compression at room temperature and at elevated temperature. It was found that short circuit current increases and the thickness decreases with increasing the pressure during the compression. The conversion efficiency was improved by employing hot-pressing method where the compression is done at elevated temperature. This is due to the improvement of necking between TiO2 nanoparticles.
{"title":"Flexible dye-sensitized solar cells from titanium oxide nanoparticles","authors":"T. Soga, Kosuke Ezaka, Tomoyuki Yamamura, Takuma Yasufuku, N. Kishi","doi":"10.1109/INEC.2014.7460319","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460319","url":null,"abstract":"Dye-sensitized solar cells were fabricated on flexible substrate from TiO2 nanoparticles by compression at room temperature and at elevated temperature. It was found that short circuit current increases and the thickness decreases with increasing the pressure during the compression. The conversion efficiency was improved by employing hot-pressing method where the compression is done at elevated temperature. This is due to the improvement of necking between TiO2 nanoparticles.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124824622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460419
Chang-Chun Lee, C. Hsieh, M. Liao, Sen-Wen Cheng, Yu-Huan Guo
To investigate the combined strained effects of dummy active diffused region (OD) and salient gate width of layout pattern on the mobility gain of nano-scaled device while advanced stressors of source/drain embedded silicon-carbon alloy and a tensile contact etch stop layers (CESL) are taken into account, the study uses a validated fabricated-oriented stress simulated methodology to estimate the performance of a 22nm NMOSFET.
{"title":"Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressors","authors":"Chang-Chun Lee, C. Hsieh, M. Liao, Sen-Wen Cheng, Yu-Huan Guo","doi":"10.1109/INEC.2014.7460419","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460419","url":null,"abstract":"To investigate the combined strained effects of dummy active diffused region (OD) and salient gate width of layout pattern on the mobility gain of nano-scaled device while advanced stressors of source/drain embedded silicon-carbon alloy and a tensile contact etch stop layers (CESL) are taken into account, the study uses a validated fabricated-oriented stress simulated methodology to estimate the performance of a 22nm NMOSFET.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121394371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460427
Yu-Hua Liu, C. Liao, Chih-Ting Lin, J. Wang
Ambipolar carrier injection and charge retention phenomenon of gold-nanocrystal (Au-NC) memories with different tunneling oxide (TO) thickness were investigated. For the samples with thin TO (~3 nm), the electrons were injected from the substrate at positive gate bias. With the increase of TO thickness, the holes injected from the gate became more significant. Compared with the gate injected holes in the sample with thick TO, the substrate injected electrons in the sample with thin TO show a higher charge loss. The poor charge retention can be ascribed to the direct tunneling leakage current through the thin TO. Further, the Au-NC memories with electrons exhibit lower activation energy of charge loss than that with holes, which is due to the lower electron barrier height of the Au-NC memory.
{"title":"Ambipolar carrier injection of gold nanocrystal nonvolatile memory with different tunneling oxide thickness","authors":"Yu-Hua Liu, C. Liao, Chih-Ting Lin, J. Wang","doi":"10.1109/INEC.2014.7460427","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460427","url":null,"abstract":"Ambipolar carrier injection and charge retention phenomenon of gold-nanocrystal (Au-NC) memories with different tunneling oxide (TO) thickness were investigated. For the samples with thin TO (~3 nm), the electrons were injected from the substrate at positive gate bias. With the increase of TO thickness, the holes injected from the gate became more significant. Compared with the gate injected holes in the sample with thick TO, the substrate injected electrons in the sample with thin TO show a higher charge loss. The poor charge retention can be ascribed to the direct tunneling leakage current through the thin TO. Further, the Au-NC memories with electrons exhibit lower activation energy of charge loss than that with holes, which is due to the lower electron barrier height of the Au-NC memory.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131690719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460433
A. Kirihara, M. Ishida, K. Uchida, H. Someya, Yuma Iwasaki, K. Ihara, S. Kohmoto, E. Saitoh, T. Murakami
Thermoelectric conversion (TEC) technologies, which convert heat into electricity, have received a great attention, because they are expected to be a powerful approach to utilize wasted thermal energy. Here we present novel thermoelectric converters based on the spin Seebeck effect (SSE), and show their scaling law which is largely different from that of conventional TEC devices. We experimentally demonstrate that the TEC output signals straightforwardly increase with the size of the converters. This scaling law enables us to implement simple-structured thermoelectric converters by using productive film-coating methods. Such coating-based TEC techniques may pave the way for a wide range of applications using a variety of heat sources.
{"title":"Spin-Seebeck thermoelectric converter","authors":"A. Kirihara, M. Ishida, K. Uchida, H. Someya, Yuma Iwasaki, K. Ihara, S. Kohmoto, E. Saitoh, T. Murakami","doi":"10.1109/INEC.2014.7460433","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460433","url":null,"abstract":"Thermoelectric conversion (TEC) technologies, which convert heat into electricity, have received a great attention, because they are expected to be a powerful approach to utilize wasted thermal energy. Here we present novel thermoelectric converters based on the spin Seebeck effect (SSE), and show their scaling law which is largely different from that of conventional TEC devices. We experimentally demonstrate that the TEC output signals straightforwardly increase with the size of the converters. This scaling law enables us to implement simple-structured thermoelectric converters by using productive film-coating methods. Such coating-based TEC techniques may pave the way for a wide range of applications using a variety of heat sources.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132092026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460458
Hau-Cheng Wang, Tsung-Cheng Chen, Hao Yang, P. Juan, Chia‐Ming Yang, Chao‐Sung Lai
A 50 nm-thick TiN sensing membrane with nitrogen (N2) ratio modification was firstly used in EGFET for pH sensing. The highest pH sensitivity of 61 mV/pH with linearity of 99.9% could be found in N2 to N2+Ar ratio of 20%. Similar performance could be maintained at least for 250 days. With additional PVC selective membrane of K+ ionophore, sensitivity could be increased to 48.7mV/pK. This developed TiN EGFET could be a potential candidate for pH and pK sensing application.
{"title":"Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection","authors":"Hau-Cheng Wang, Tsung-Cheng Chen, Hao Yang, P. Juan, Chia‐Ming Yang, Chao‐Sung Lai","doi":"10.1109/INEC.2014.7460458","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460458","url":null,"abstract":"A 50 nm-thick TiN sensing membrane with nitrogen (N2) ratio modification was firstly used in EGFET for pH sensing. The highest pH sensitivity of 61 mV/pH with linearity of 99.9% could be found in N2 to N2+Ar ratio of 20%. Similar performance could be maintained at least for 250 days. With additional PVC selective membrane of K+ ionophore, sensitivity could be increased to 48.7mV/pK. This developed TiN EGFET could be a potential candidate for pH and pK sensing application.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114068999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460416
H. Yamaguchi, D. Hatanaka, I. Mahboob, H. Okamoto
We will review our recent activities on GaAs/AlGaAs electromechanical parametric resonators. Piezoelectric transduction allows us to electrically modulate the resonance frequency, providing an on-chip testbed for nonlinear phononics experiments. Both degenerate and nondegenerate parametric amplification, as well as the excitation of parametric resonance, are performed for single and multi-mode resonators. We demonstrate several nonlinear phenomenon, including phonon lasing, coherent control, phonon propagation switching, and electromechanical signal processing.
{"title":"Nonlinear electromechanical resonators ~ from phonon lasing operation to nanomechanical processors","authors":"H. Yamaguchi, D. Hatanaka, I. Mahboob, H. Okamoto","doi":"10.1109/INEC.2014.7460416","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460416","url":null,"abstract":"We will review our recent activities on GaAs/AlGaAs electromechanical parametric resonators. Piezoelectric transduction allows us to electrically modulate the resonance frequency, providing an on-chip testbed for nonlinear phononics experiments. Both degenerate and nondegenerate parametric amplification, as well as the excitation of parametric resonance, are performed for single and multi-mode resonators. We demonstrate several nonlinear phenomenon, including phonon lasing, coherent control, phonon propagation switching, and electromechanical signal processing.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"59 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114126603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-07-28DOI: 10.1109/INEC.2014.7460448
M. Parihar, A. Kranti
In this work, we report on the feasibility and design optimization of impact ionization junctionless transistors for dynamic memory and bio-sensing applications. Optimization of snapback and the hysteresis effects in the output characteristics to achieve high current margin between the two reading states of a dynamic memory are presented. The optimized cell offers nearly 4 orders of difference in the reading current of the two logic states. A possible application of these JL transistors for designing an ultra-sensitive bio-sensor is also outlined and compared with the conventional inversion mode transistor design.
{"title":"Junctionless transistors for dynamic memory and sensing applications","authors":"M. Parihar, A. Kranti","doi":"10.1109/INEC.2014.7460448","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460448","url":null,"abstract":"In this work, we report on the feasibility and design optimization of impact ionization junctionless transistors for dynamic memory and bio-sensing applications. Optimization of snapback and the hysteresis effects in the output characteristics to achieve high current margin between the two reading states of a dynamic memory are presented. The optimized cell offers nearly 4 orders of difference in the reading current of the two logic states. A possible application of these JL transistors for designing an ultra-sensitive bio-sensor is also outlined and compared with the conventional inversion mode transistor design.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115130445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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