Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774484
Chih-Feng Yen, Yu-Ya Huang, Shen-Hao Tsao, H. Hsu
This experiment, liquid phase deposition (LPD) was used to deposit a Zinc Oxide thin film and doped with Al2O3 as a dielectric layer on a P-type silicon substrate to fabricate a metal-oxide-semiconductor (MOS) capacitor. Discuss the effect of doping different volumes of Al2O3 (0, 1, 3, 5 ml) on the electrical properties of the film. Appropriate doping of Al2O3 can reduce the surface roughness of the film. According to the experimental data, it has better electrical properties when doped with 3 ml of Al2O3 and vacuum annealed at 700°C for 1 hour. According to the experimental results, oxide layer charge, dielectric constant, equivalent oxide thickness (EOT), density of interface traps (Dit), leakage current density and average roughness are 213.3 pF, 65.3, 11.45 nm, 4.25 × 1011 cm-2eV-1, 3.18 × 10-5 A/cm2 at +5 V and 1.59 nm. A higher k value can effectively reduce the direct tunneling leakage current under the trend of smaller and smaller components in the future.
{"title":"Analysis of electrical properties in MOS structure with a low surface roughness Al2O3-doped ZnO film as gate oxide","authors":"Chih-Feng Yen, Yu-Ya Huang, Shen-Hao Tsao, H. Hsu","doi":"10.1109/ICASI55125.2022.9774484","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774484","url":null,"abstract":"This experiment, liquid phase deposition (LPD) was used to deposit a Zinc Oxide thin film and doped with Al<inf>2</inf>O<inf>3</inf> as a dielectric layer on a P-type silicon substrate to fabricate a metal-oxide-semiconductor (MOS) capacitor. Discuss the effect of doping different volumes of Al<inf>2</inf>O<inf>3</inf> (0, 1, 3, 5 ml) on the electrical properties of the film. Appropriate doping of Al<inf>2</inf>O<inf>3</inf> can reduce the surface roughness of the film. According to the experimental data, it has better electrical properties when doped with 3 ml of Al<inf>2</inf>O<inf>3</inf> and vacuum annealed at 700°C for 1 hour. According to the experimental results, oxide layer charge, dielectric constant, equivalent oxide thickness (EOT), density of interface traps (D<inf>it</inf>), leakage current density and average roughness are 213.3 pF, 65.3, 11.45 nm, 4.25 × 10<sup>11</sup> cm<sup>-2</sup>eV<sup>-1</sup>, 3.18 × 10-5 A/cm2 at +5 V and 1.59 nm. A higher k value can effectively reduce the direct tunneling leakage current under the trend of smaller and smaller components in the future.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114826061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
FinFET, of course, behaves like MOSFET and is regulated as the conventional formula, in which the gate dielectric equivalent capacitor, carrier mobility, and channel width and length are apparently fixed and contributed to a known quantity, Kn, as in (1) and (2). Once the transistor is successfully made and measured to form the current-voltage curves, wisely fitting those curves with certain physical parameters give insight and realization in the transistor. Nevertheless, Kn may always be fixed if the sizes of channel length and width and the thickness of dielectrics are feasibly reliable-process-controlled. In the sense, the mobility is totally under inspection.
{"title":"Current-Voltage Characteristics Curves with Fixed Kn","authors":"Hsin-Chia Yang, Tzu-Chien Chen, Sheng-Ping Wen, Zhe-Wei Lin, Chen-yu Tsai, You-Sheng Lin, Kuan-Hung Chen, Pei-Jun Yang, Chia-Chun Lin, Chang-Ping Hsu, Chen-Chien Tsai, Yu-Tsung Liao, Sung-Ching Chi","doi":"10.1109/ICASI55125.2022.9774443","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774443","url":null,"abstract":"FinFET, of course, behaves like MOSFET and is regulated as the conventional formula, in which the gate dielectric equivalent capacitor, carrier mobility, and channel width and length are apparently fixed and contributed to a known quantity, Kn, as in (1) and (2). Once the transistor is successfully made and measured to form the current-voltage curves, wisely fitting those curves with certain physical parameters give insight and realization in the transistor. Nevertheless, Kn may always be fixed if the sizes of channel length and width and the thickness of dielectrics are feasibly reliable-process-controlled. In the sense, the mobility is totally under inspection.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122016186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774474
Wei-chen Lee, Ruei-Si Hong, Jhan-Li Wu
To measure the S parameters of a connector directly is not easy. Usually, a test fixture with soldered SMAs or similar adaptors is needed. Then the measurement results of S parameters will include the effects of the SMA adaptors and the traces of the test fixture. The objective of this research was to develop low-cost probes to measure the S parameters of the connectors directly. We modified the SMA socket to socket (reverse polarity) type adaptors to make two probes, and the probes' effects can be calibrated using the standard SOLT calibration kit. The experimental results showed that at least one probe performed equivalently as a microwave probe up to 10 GHz measurement in insertion loss and return loss.
{"title":"Development of a Low-Cost Probe based on the SMA Adaptor for S-Parameter Measurement","authors":"Wei-chen Lee, Ruei-Si Hong, Jhan-Li Wu","doi":"10.1109/ICASI55125.2022.9774474","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774474","url":null,"abstract":"To measure the S parameters of a connector directly is not easy. Usually, a test fixture with soldered SMAs or similar adaptors is needed. Then the measurement results of S parameters will include the effects of the SMA adaptors and the traces of the test fixture. The objective of this research was to develop low-cost probes to measure the S parameters of the connectors directly. We modified the SMA socket to socket (reverse polarity) type adaptors to make two probes, and the probes' effects can be calibrated using the standard SOLT calibration kit. The experimental results showed that at least one probe performed equivalently as a microwave probe up to 10 GHz measurement in insertion loss and return loss.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126344838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774464
Yuan-Kang Wu, Cheng-Liang Huang
In modern grids, more components such as renewable resources, distributed generators or storages will be integrated into power systems. Thus, transient frequency analyses in such a system become more challengeable. Many factors would affect the transient frequency response of a power system, including synchronous inertia from conventional synchronous machines, dynamic motor loads, the characteristics of speed governor, frequency regulation by power electronic-based resources and others. However, the dynamic parameters of these devices could be inaccurate, which causes a large error for evaluating transient frequency characteristics. Thus, this study investigated various structures of simplified models for transient frequency responses and the corresponding process to establish these models. In addition, this study develops a simplified frequency-response model in Taiwan by considering the collected phasor measurement unit (PMU) data during grid contingencies.
{"title":"Study of Simplified Models for Transient Frequency in Power Systems","authors":"Yuan-Kang Wu, Cheng-Liang Huang","doi":"10.1109/ICASI55125.2022.9774464","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774464","url":null,"abstract":"In modern grids, more components such as renewable resources, distributed generators or storages will be integrated into power systems. Thus, transient frequency analyses in such a system become more challengeable. Many factors would affect the transient frequency response of a power system, including synchronous inertia from conventional synchronous machines, dynamic motor loads, the characteristics of speed governor, frequency regulation by power electronic-based resources and others. However, the dynamic parameters of these devices could be inaccurate, which causes a large error for evaluating transient frequency characteristics. Thus, this study investigated various structures of simplified models for transient frequency responses and the corresponding process to establish these models. In addition, this study develops a simplified frequency-response model in Taiwan by considering the collected phasor measurement unit (PMU) data during grid contingencies.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125238806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774462
Jie-Tong Zou, Rajveer G V
It’s been considered an incomplete task for years to maintain large solar power plants for years. Presented here is an Artificial Intelligence (AI) based defects detection of Photovoltaic(PV) modules using Thermal Images (TI) darknet YOLOV4 object detection, which can be processed in two ways: (1) Creating a huge number of high-resolution TI samples using a huge number of TI generation methods; and (2) using the generated TI’s, to develop an efficient method of defects classification. Convolution Neural Network (CNN) technology and traditional image processing technology are combined to result in the TI object detection method. This method has a capability of training a large number of high-resolution TI samples to give a good AI model output. Then, CNN is used to extract the deep feature of TI to show the defected cells. In other hand using enhanced 5G technology it is used to operate the drone for long range and by help of AI, can send the defected cells location to the ground station. Compared to other solutions, using it can improve PV module inspection and health management solutions significantly. It has been demonstrated experimentally that the proposed AI-based solution is efficient and accurate at detecting defects using TI and drones automatically.
{"title":"Drone-based solar panel inspection with 5G and AI Technologies","authors":"Jie-Tong Zou, Rajveer G V","doi":"10.1109/ICASI55125.2022.9774462","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774462","url":null,"abstract":"It’s been considered an incomplete task for years to maintain large solar power plants for years. Presented here is an Artificial Intelligence (AI) based defects detection of Photovoltaic(PV) modules using Thermal Images (TI) darknet YOLOV4 object detection, which can be processed in two ways: (1) Creating a huge number of high-resolution TI samples using a huge number of TI generation methods; and (2) using the generated TI’s, to develop an efficient method of defects classification. Convolution Neural Network (CNN) technology and traditional image processing technology are combined to result in the TI object detection method. This method has a capability of training a large number of high-resolution TI samples to give a good AI model output. Then, CNN is used to extract the deep feature of TI to show the defected cells. In other hand using enhanced 5G technology it is used to operate the drone for long range and by help of AI, can send the defected cells location to the ground station. Compared to other solutions, using it can improve PV module inspection and health management solutions significantly. It has been demonstrated experimentally that the proposed AI-based solution is efficient and accurate at detecting defects using TI and drones automatically.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134143123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774493
S. Yeh, H. Hu, Shao-Rong Sheng, Yi-Ru Wu
In this paper, we create a multi-type interactive visualization system that integrates virtual reality, mixed reality, and web browsers. To enhance the immersive experience, we design a hand gesture control system to operate the visualization webpage. In addition, the system uses real-life Three-Dimensional(3D) digital evaluation model data from Geographic Information System(GIS) to build a terrain model in a 3D environment and simulate a mountain collapse situation. Visualizing the terrain model is done with the aid of the game engine Unity3D. Using a game engine as a simulator for surface geological processes represents a novel approach to computation. We also provide an interface to recreate a new terrain model easily and quickly.
{"title":"Interactive Visualization System of 3-D digital Elevation Model For Mountain Collapse Simulation","authors":"S. Yeh, H. Hu, Shao-Rong Sheng, Yi-Ru Wu","doi":"10.1109/ICASI55125.2022.9774493","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774493","url":null,"abstract":"In this paper, we create a multi-type interactive visualization system that integrates virtual reality, mixed reality, and web browsers. To enhance the immersive experience, we design a hand gesture control system to operate the visualization webpage. In addition, the system uses real-life Three-Dimensional(3D) digital evaluation model data from Geographic Information System(GIS) to build a terrain model in a 3D environment and simulate a mountain collapse situation. Visualizing the terrain model is done with the aid of the game engine Unity3D. Using a game engine as a simulator for surface geological processes represents a novel approach to computation. We also provide an interface to recreate a new terrain model easily and quickly.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115333982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774469
Chao‐Ming Lin
In this paper, the mechanical behavior and electrical conductivity of the metal-coated conductive balls in the ACF (Anisotropic Conductive Film) material after being compressed and deformed by a flat die are analyzed experimentally. The method used is to take five Au/Ni-coated PMMA-core composite balls with an average diameter of about 5.65 microns in the conductive balls, and perform the compression behavior of loading and unloading with a single ball to obtain the data of compression strength, deformation, electrical resistance, compression rate, and recovery rate in the compression process. The relationship between the contact radius and the contact area with the compression rate is further calculated through theoretical assumption. For the assumptions and calculations of the contact area, the differences in the average stress-strain and the nominal stress-strain can be evaluated and used to explain the three stages in the deformation process of the conductive ball. The three main stages are: the initial deformation stage (Cr: 0-0.2) of the conductive ball is in the small deformation elastic compression zone, the middle stage (Cr: 0.2-0.5) is the large deformation plastic compression zone with part of the metal shell rupture, and the final stage (0.5-0.8) of the conductive ball is severely delaminated and crushed. The results show that the conductive balls can maintain a stable resistance of about 10 ohms at a range of compression ratio (Cr < 0.5). Such electrical resistance (~10 Ohms) can maintain stable current transmission and such average compression stress (~300 - ~750 MPa ) can make the effective rebound force (15-17 mN) of the metal-coated plastic ball. In order to effectively maintain power supply stability and mechanical structure reliability, it is suggested that the compression ratio in the ACF packaging must be effectively controlled to the value (Cr in this study: 0.3-0.5) before the occurrence of the compression strength.
{"title":"Experiments on Mechanical Behavior and Electrical Conductivity of Au/Ni-Coated PMMA-Core Composite Particle During Micro Compression Testing","authors":"Chao‐Ming Lin","doi":"10.1109/ICASI55125.2022.9774469","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774469","url":null,"abstract":"In this paper, the mechanical behavior and electrical conductivity of the metal-coated conductive balls in the ACF (Anisotropic Conductive Film) material after being compressed and deformed by a flat die are analyzed experimentally. The method used is to take five Au/Ni-coated PMMA-core composite balls with an average diameter of about 5.65 microns in the conductive balls, and perform the compression behavior of loading and unloading with a single ball to obtain the data of compression strength, deformation, electrical resistance, compression rate, and recovery rate in the compression process. The relationship between the contact radius and the contact area with the compression rate is further calculated through theoretical assumption. For the assumptions and calculations of the contact area, the differences in the average stress-strain and the nominal stress-strain can be evaluated and used to explain the three stages in the deformation process of the conductive ball. The three main stages are: the initial deformation stage (Cr: 0-0.2) of the conductive ball is in the small deformation elastic compression zone, the middle stage (Cr: 0.2-0.5) is the large deformation plastic compression zone with part of the metal shell rupture, and the final stage (0.5-0.8) of the conductive ball is severely delaminated and crushed. The results show that the conductive balls can maintain a stable resistance of about 10 ohms at a range of compression ratio (Cr < 0.5). Such electrical resistance (~10 Ohms) can maintain stable current transmission and such average compression stress (~300 - ~750 MPa ) can make the effective rebound force (15-17 mN) of the metal-coated plastic ball. In order to effectively maintain power supply stability and mechanical structure reliability, it is suggested that the compression ratio in the ACF packaging must be effectively controlled to the value (Cr in this study: 0.3-0.5) before the occurrence of the compression strength.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114173073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774485
Tsung-Pin Lu, Ming-Xian Loi, Ji-Jhih Yeh, Ambika Subramanian, Pin-Hsi Chiu, Cheng-Han Wu, Hao-Wei Liu, R. Ulaganathan, Chang‐Yu Lin
To understand and optimize the eletrical properties of two-dimensional (2D) Van der Waals material is crucial since the thickness of the material can substantially affect the field of 2D material based eletronic devices and other applications. The main objective of this study is to investigate the most important parameters for examing the performance of FETs, carrier mobility (µ) and threshold voltage (Vth) of indium selenide (InSe) based field-effect transistor. We believe that analyzing the thickness of 2D materials is essential for the performance enhancement of FETs in a variety of electronic and optoelectronic applications. We hope this result can be assisted in performance enhancement of complementary metal-oxide-semiconductor (CMOS) inverter and logic circuit applications.
{"title":"Electrical Characteristics of InSe-based Field-effect Transistors","authors":"Tsung-Pin Lu, Ming-Xian Loi, Ji-Jhih Yeh, Ambika Subramanian, Pin-Hsi Chiu, Cheng-Han Wu, Hao-Wei Liu, R. Ulaganathan, Chang‐Yu Lin","doi":"10.1109/ICASI55125.2022.9774485","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774485","url":null,"abstract":"To understand and optimize the eletrical properties of two-dimensional (2D) Van der Waals material is crucial since the thickness of the material can substantially affect the field of 2D material based eletronic devices and other applications. The main objective of this study is to investigate the most important parameters for examing the performance of FETs, carrier mobility (µ) and threshold voltage (Vth) of indium selenide (InSe) based field-effect transistor. We believe that analyzing the thickness of 2D materials is essential for the performance enhancement of FETs in a variety of electronic and optoelectronic applications. We hope this result can be assisted in performance enhancement of complementary metal-oxide-semiconductor (CMOS) inverter and logic circuit applications.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130781637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-04-22DOI: 10.1109/ICASI55125.2022.9774436
Zhi-Fang Yang, Chin-Ting Hung
The max-margin early event detector (MMED) method is the first work to solve early event detection based on the structured support vector machine(SOSVM). In this study, a feedback MMED method (FMMED) is proposed to reduce the number of constraints by introducing a feedback mechanism. The convergence of the iterative MMED method is verified to ensure the cutting plane algorithm correctly applied to the proposed FMMED method. The proposed feedback mechanism is used to find the early events related to un-tight constraints in the previous iteration, and to remove the constraints containing these early events in the current iteration. Three datasets are utilized to verify the feasibility of the proposed FMMED method.
{"title":"Feedback Max-Margin Early Event Detector","authors":"Zhi-Fang Yang, Chin-Ting Hung","doi":"10.1109/ICASI55125.2022.9774436","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774436","url":null,"abstract":"The max-margin early event detector (MMED) method is the first work to solve early event detection based on the structured support vector machine(SOSVM). In this study, a feedback MMED method (FMMED) is proposed to reduce the number of constraints by introducing a feedback mechanism. The convergence of the iterative MMED method is verified to ensure the cutting plane algorithm correctly applied to the proposed FMMED method. The proposed feedback mechanism is used to find the early events related to un-tight constraints in the previous iteration, and to remove the constraints containing these early events in the current iteration. Three datasets are utilized to verify the feasibility of the proposed FMMED method.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121280681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
FinFET, another transformed type of MOSFET with the conventional mechanism, does effectively suppress the leakage current even as the channel length reduces to tens of nanometers. The whole transistor is switched on or off depending on a threshold voltage. The whole transistor may own a threshold voltage, which is associated with the band structure, dose concentration, and gate capacitor. The electrical performances may be demonstrated by the curves of current versus applied voltages. Those curves are then put through fitting by (1) and (2), in which the threshold voltage, Kn, and λ are to be determined. Therefore, based on a transistor and a chosen fixed threshold voltage, Kn is λ are decided making minimum the deviation in (3). Various threshold voltages accompany with various sets of Kn and λ. The final threshold voltage of a specific transistor is selected and made conclusively fixed through the minimum among all the total minimums.
{"title":"Negative Fixed Threshold Voltage on NFinFET Current-Voltage Characteristics Curves","authors":"Hsin-Chia Yang, You-Sheng Lin, Zhe-Wei Lin, Tzu-Chien Chen, Sheng-Ping Wen, Chen-yu Tsai, Kuan-Hung Chen, Pei-Jun Yang, Chia-Chun Lin, Chang-Ping Hsu, Chen-Chien Tsai, Yu-Tsung Liao, Sung-Ching Chi","doi":"10.1109/ICASI55125.2022.9774483","DOIUrl":"https://doi.org/10.1109/ICASI55125.2022.9774483","url":null,"abstract":"FinFET, another transformed type of MOSFET with the conventional mechanism, does effectively suppress the leakage current even as the channel length reduces to tens of nanometers. The whole transistor is switched on or off depending on a threshold voltage. The whole transistor may own a threshold voltage, which is associated with the band structure, dose concentration, and gate capacitor. The electrical performances may be demonstrated by the curves of current versus applied voltages. Those curves are then put through fitting by (1) and (2), in which the threshold voltage, Kn, and λ are to be determined. Therefore, based on a transistor and a chosen fixed threshold voltage, Kn is λ are decided making minimum the deviation in (3). Various threshold voltages accompany with various sets of Kn and λ. The final threshold voltage of a specific transistor is selected and made conclusively fixed through the minimum among all the total minimums.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126941733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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