Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639247
Ohno, K. Maehashi, K. Inoue, K. Matsumoto
A method of suppressing current fluctuations in carbon nanotube field-effect transistors (CNTFETs) is proposed. We compared the time dependences of the drain current for direct current (DC) measurement and alternating current (AC) measurement with a lock-in amplifier. Drain-current fluctuations were highly suppressed by the AC with lock-in method in the small gate voltage regime. On the other hand, the current fluctuations for DC measurements were not so suppressed even if the integration time was increased from 80 mus to 10 ms. The frequency dependence of the current noise power spectra of the DC measurements was approximately 1/f while that of the AC measurement was approximately 1/f2. These results indicate that the use of AC with a lock-in amplifier is very suitable for the suppression of current fluctuations.
{"title":"Suppression of current fluctuations in carbon nanotube field-effect transistors by applying alternating current","authors":"Ohno, K. Maehashi, K. Inoue, K. Matsumoto","doi":"10.1109/ICONN.2008.4639247","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639247","url":null,"abstract":"A method of suppressing current fluctuations in carbon nanotube field-effect transistors (CNTFETs) is proposed. We compared the time dependences of the drain current for direct current (DC) measurement and alternating current (AC) measurement with a lock-in amplifier. Drain-current fluctuations were highly suppressed by the AC with lock-in method in the small gate voltage regime. On the other hand, the current fluctuations for DC measurements were not so suppressed even if the integration time was increased from 80 mus to 10 ms. The frequency dependence of the current noise power spectra of the DC measurements was approximately 1/f while that of the AC measurement was approximately 1/f2. These results indicate that the use of AC with a lock-in amplifier is very suitable for the suppression of current fluctuations.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121594092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639269
Yue Chan, G. Cox, J.M. Hill
In this paper, we examine a carbon atom orbiting around the outside of a (6,6) carbon nanotube, where the orbiting phenomena is assumed to arise only from the van der Waals interactions between the carbon atom and the atoms on the surface of the carbon nanotube. We model the van der Waals forces utilizing the Lennard-Jones potential and assume that the carbon atoms are uniformly distributed over the surface of the carbon nanotube, so that a discrete sum of the atomic potential energy between the carbon atom and the molecule can be approximated by a line integral. The circular orbiting frequency of the system can be estimated by investigating the minimum energy configuration of the effective potential energy. An instability calculation is performed to ensure that the circular orbit remains stable, and the classification of the atompsilas possible loci is determined numerically. We find that the circular orbiting frequency of the proposed system reaches the gigahertz regime, which suggests that such a system has potential to be utilized as an ideal device in future technological development. We also briefly show that the results obtained from the above system can be extended to a fullerene orbiting around the outside of a carbon nanotube without conceptual difficulties, but with increased mathematical complexity.
{"title":"A carbon atom orbiting around the outside of a carbon nanotube","authors":"Yue Chan, G. Cox, J.M. Hill","doi":"10.1109/ICONN.2008.4639269","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639269","url":null,"abstract":"In this paper, we examine a carbon atom orbiting around the outside of a (6,6) carbon nanotube, where the orbiting phenomena is assumed to arise only from the van der Waals interactions between the carbon atom and the atoms on the surface of the carbon nanotube. We model the van der Waals forces utilizing the Lennard-Jones potential and assume that the carbon atoms are uniformly distributed over the surface of the carbon nanotube, so that a discrete sum of the atomic potential energy between the carbon atom and the molecule can be approximated by a line integral. The circular orbiting frequency of the system can be estimated by investigating the minimum energy configuration of the effective potential energy. An instability calculation is performed to ensure that the circular orbit remains stable, and the classification of the atompsilas possible loci is determined numerically. We find that the circular orbiting frequency of the proposed system reaches the gigahertz regime, which suggests that such a system has potential to be utilized as an ideal device in future technological development. We also briefly show that the results obtained from the above system can be extended to a fullerene orbiting around the outside of a carbon nanotube without conceptual difficulties, but with increased mathematical complexity.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129930940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639272
G. Lansbergen, R. Rahman, C. Wellard, P. Rutten, J. Caro, I. Woo, N. Colleart, S. Biesemans, Gerhard Klimeck, L. Hollenberg, S. Rogge
Current semiconductor devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottoms-up perspective, the smallest functional element within a nanodevice would be a single (dopant) atom itself. Control and understanding over the eigenenergies and wavefunctions of a single dopant could prove a key ingredient for device technology beyond-CMOS. Here, we will discuss the eigenlevels of a single As donor in a three terminal configuration. The donor is incorporated in the channel of prototype transistors called FinFETs. The measured eigenlevels are shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The theoretical framework in which we describe this system (NEMO-3D) is based on a tight-binding approximation.
{"title":"Determination of the eigenstates and wavefunctions of a single gated As donor","authors":"G. Lansbergen, R. Rahman, C. Wellard, P. Rutten, J. Caro, I. Woo, N. Colleart, S. Biesemans, Gerhard Klimeck, L. Hollenberg, S. Rogge","doi":"10.1109/ICONN.2008.4639272","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639272","url":null,"abstract":"Current semiconductor devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottoms-up perspective, the smallest functional element within a nanodevice would be a single (dopant) atom itself. Control and understanding over the eigenenergies and wavefunctions of a single dopant could prove a key ingredient for device technology beyond-CMOS. Here, we will discuss the eigenlevels of a single As donor in a three terminal configuration. The donor is incorporated in the channel of prototype transistors called FinFETs. The measured eigenlevels are shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The theoretical framework in which we describe this system (NEMO-3D) is based on a tight-binding approximation.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123092265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639235
J. Cornish, R. Abdelaal
In this paper we describe the production of nanocrystallites of silicon embedded in an amorphous silicon matrix by Hot Wire CVD. Prior modification of the substrate results in a procedure for increasing the volume fraction and density of the nano-crystallites relative to the other phases. A macroscopic process, random linear grooving, applied to the substrates has been shown to have a significant affect on the structure of the thin film nano-crystalline silicon subsequently grown on these profiled substrates. This has been found to occur for samples produced under different temperature regimes resulting in crystalline fractions in the range of 10% to 80%. Analysis of the RAMAN spectra for these samples shows a reduction in the amorphous fraction while the fractions of both the crystalline material and the intermediate phase increase. Electron micrographs show increased crystallite size. The films on the modified substrates appear to be denser than the films on the smooth substrates.
{"title":"Modification of the density of crystallites in silicon nano-crystalline thin films by substrate profiling","authors":"J. Cornish, R. Abdelaal","doi":"10.1109/ICONN.2008.4639235","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639235","url":null,"abstract":"In this paper we describe the production of nanocrystallites of silicon embedded in an amorphous silicon matrix by Hot Wire CVD. Prior modification of the substrate results in a procedure for increasing the volume fraction and density of the nano-crystallites relative to the other phases. A macroscopic process, random linear grooving, applied to the substrates has been shown to have a significant affect on the structure of the thin film nano-crystalline silicon subsequently grown on these profiled substrates. This has been found to occur for samples produced under different temperature regimes resulting in crystalline fractions in the range of 10% to 80%. Analysis of the RAMAN spectra for these samples shows a reduction in the amorphous fraction while the fractions of both the crystalline material and the intermediate phase increase. Electron micrographs show increased crystallite size. The films on the modified substrates appear to be denser than the films on the smooth substrates.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114100183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639261
M. Nussio, N. Voelcker, M. Sykes, B. Flavel, J. Miners, J. Shapter
The analysis of membrane domain segregation and phase separation is of significant interest for the understanding of cell membranes. In this paper, we report a new approach to atomic force microscopy (AFM) of artificial membranes, using both functionalised AFM tips and ldquoForce Volumerdquo AFM imaging for the analysis of membrane phase separation. Simultaneous topology and mapping of interaction forces of binary component phospholipid bilayer membranes was performed yielding novel insights into membrane structure at unprecedented resolution.
{"title":"High resolution chemical mapping of biomimetic membranes by force volume imaging","authors":"M. Nussio, N. Voelcker, M. Sykes, B. Flavel, J. Miners, J. Shapter","doi":"10.1109/ICONN.2008.4639261","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639261","url":null,"abstract":"The analysis of membrane domain segregation and phase separation is of significant interest for the understanding of cell membranes. In this paper, we report a new approach to atomic force microscopy (AFM) of artificial membranes, using both functionalised AFM tips and ldquoForce Volumerdquo AFM imaging for the analysis of membrane phase separation. Simultaneous topology and mapping of interaction forces of binary component phospholipid bilayer membranes was performed yielding novel insights into membrane structure at unprecedented resolution.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124898422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639291
B. Priestly, M. Stebbing
This presentation addresses the potential for nanotechnology development to be derailed, or at least delayed, by unresolved concerns about health and safety issues. Findings from surveys of risk perception indicate that availability of knowledge about health risks can both inform and fuel concerns. Trust in regulatory systems is one factor which can influence community perceptions of risk, and there remain some issues about whether the regulatory systems are fully capable of identifying and managing these risks.
{"title":"Risk perception and risk communication: Is nanotechnology at the crossroads in Australia?","authors":"B. Priestly, M. Stebbing","doi":"10.1109/ICONN.2008.4639291","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639291","url":null,"abstract":"This presentation addresses the potential for nanotechnology development to be derailed, or at least delayed, by unresolved concerns about health and safety issues. Findings from surveys of risk perception indicate that availability of knowledge about health risks can both inform and fuel concerns. Trust in regulatory systems is one factor which can influence community perceptions of risk, and there remain some issues about whether the regulatory systems are fully capable of identifying and managing these risks.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127849490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639258
T. Hilder, J.M. Hill
One important application of nanotechnology is that of drug delivery, and in particular the targeted delivery of drugs using nanotubes. A proper understanding of the encapsulation behavior of drug molecules into nanotubes is vital for the development of nanoscale drug delivery vehicles. Furthermore, there are many other materials which may form single-walled nanotubes, such as carbon, boron carbide, boron nitride and silicon, and it is also important to understand their advantages and disadvantages. This paper presents a synopsis of the recent work in which boron nitride, boron carbide and silicon nanotubes are examined as drug delivery vehicles, and their encapsulation behavior is compared to previous work of the authors on carbon nanotubes.
{"title":"Encapsulation of the anticancer drug cisplatin into nanotubes","authors":"T. Hilder, J.M. Hill","doi":"10.1109/ICONN.2008.4639258","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639258","url":null,"abstract":"One important application of nanotechnology is that of drug delivery, and in particular the targeted delivery of drugs using nanotubes. A proper understanding of the encapsulation behavior of drug molecules into nanotubes is vital for the development of nanoscale drug delivery vehicles. Furthermore, there are many other materials which may form single-walled nanotubes, such as carbon, boron carbide, boron nitride and silicon, and it is also important to understand their advantages and disadvantages. This paper presents a synopsis of the recent work in which boron nitride, boron carbide and silicon nanotubes are examined as drug delivery vehicles, and their encapsulation behavior is compared to previous work of the authors on carbon nanotubes.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128555273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639290
S. Jeschke, N. Natho, O. Pfeiffer, C. Thomsen
Research in nanotechnology and nanosciences requires complex and expensive equipment. Thus, enhancement of access to experimental resources for a broad audience of students and distributed researchers is an important challenge for improving knowledge acquisition in these fields. Innovative methods of web-based information technology provide new approaches for realizing virtual working environments supporting the sharing of resources and boosting collaborative work between researchers. A concept for extending existing virtual knowledge spaces for the means of the technological disciplines is presented, and the integration of networked virtual laboratories and remote experiments - the ldquoCATLABS-approachrdquo - together with its subprojects NANOTEACH and NANOGRID are introduced.
{"title":"Networking resources for research and scientific education in nanoscience and nanotechnologies","authors":"S. Jeschke, N. Natho, O. Pfeiffer, C. Thomsen","doi":"10.1109/ICONN.2008.4639290","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639290","url":null,"abstract":"Research in nanotechnology and nanosciences requires complex and expensive equipment. Thus, enhancement of access to experimental resources for a broad audience of students and distributed researchers is an important challenge for improving knowledge acquisition in these fields. Innovative methods of web-based information technology provide new approaches for realizing virtual working environments supporting the sharing of resources and boosting collaborative work between researchers. A concept for extending existing virtual knowledge spaces for the means of the technological disciplines is presented, and the integration of networked virtual laboratories and remote experiments - the ldquoCATLABS-approachrdquo - together with its subprojects NANOTEACH and NANOGRID are introduced.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126195960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/ICONN.2008.4639242
B. Flavel, Jingxian Yu, D. Tune, J. Shapter, J. Quinton
A variety of carbon nanotube based surface architectures are fabricated on silicon, which are ideal for use in future electronic devices.
各种基于碳纳米管的表面结构被制造在硅上，这是未来电子设备的理想选择。
{"title":"Patterned attachment of carbon nanotubes to silicon","authors":"B. Flavel, Jingxian Yu, D. Tune, J. Shapter, J. Quinton","doi":"10.1109/ICONN.2008.4639242","DOIUrl":"https://doi.org/10.1109/ICONN.2008.4639242","url":null,"abstract":"A variety of carbon nanotube based surface architectures are fabricated on silicon, which are ideal for use in future electronic devices.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121888401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-02-01DOI: 10.1109/iconn.2008.4639234
D. Clarke, S. Clarke, J. Matisons, G. Simon, A. Samoć, M. Samoć
The first reported examples of polyhedral oligomeric silsesquioxane (POSS) cages containing a fulleropyrrolidine species are reported herein. Monosubstituted POSS-dioxalane species were synthesized through the hydrosilylation of a silyldioxalane with mono-vinyl substituted POSS. Subsequent deprotection yielded the desired aldehyde functionality. An alternative synthetic pathway, involving the nucleophilic substitution of mono-benzyl chloride POSS with 4-hydroxybenzaldehyde yielded the desired aldehyde functionality. Each mono-aldehyde POSS was then reacted with N-methylglycine and C60 to yield the desired POSS fulleropyrrolidines. The prepared compounds were characterized by multinuclear NMR, electrospray mass spectrometry, UV-VIS, fluorescence and optical power limiting measurements.
{"title":"POSS fulleropyrrolidines","authors":"D. Clarke, S. Clarke, J. Matisons, G. Simon, A. Samoć, M. Samoć","doi":"10.1109/iconn.2008.4639234","DOIUrl":"https://doi.org/10.1109/iconn.2008.4639234","url":null,"abstract":"The first reported examples of polyhedral oligomeric silsesquioxane (POSS) cages containing a fulleropyrrolidine species are reported herein. Monosubstituted POSS-dioxalane species were synthesized through the hydrosilylation of a silyldioxalane with mono-vinyl substituted POSS. Subsequent deprotection yielded the desired aldehyde functionality. An alternative synthetic pathway, involving the nucleophilic substitution of mono-benzyl chloride POSS with 4-hydroxybenzaldehyde yielded the desired aldehyde functionality. Each mono-aldehyde POSS was then reacted with N-methylglycine and C60 to yield the desired POSS fulleropyrrolidines. The prepared compounds were characterized by multinuclear NMR, electrospray mass spectrometry, UV-VIS, fluorescence and optical power limiting measurements.","PeriodicalId":192889,"journal":{"name":"2008 International Conference on Nanoscience and Nanotechnology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130232709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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