Pub Date : 1988-09-01DOI: 10.1109/ESSCIRC.1988.5468473
W. Pribyl, J. Harter, W. Reczek, R. Strunz
NMOS-type circuits for wordline driving circuits in CMOS-DRAMs are discussed. Associated reliability risks and circuit design problems are shown. As a solution to these problems, a new concept using true CMOS circuitry for wordline driving circuits is presented. Simulation results indicate significant advantages. Measurement results obtained from a realization on a 4 Megabit DRAM are presented at the conference.
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