All-optical thermometry plays a crucial role in precision temperature measurement across diverse fields. Quantum defects in solids are one of the most promising sensors due to their excellent sensitivity, stability, and biocompatibility. Yet, it faces limitations, such as the microwave heating effect and the complexity of spectral analysis. Addressing these challenges, we introduce a novel approach to nanoscale optical thermometry using quantum defects in silicon carbide (SiC), a material compatible with complementary metal-oxide-semiconductor (CMOS) processes. This method leverages the intensity ratio between anti-Stokes and Stokes emissions from SiC color centers, overcoming the drawbacks of traditional techniques such as optically detected magnetic resonance (ODMR) and zero-phonon line (ZPL) analysis. Our technique provides a real-time, highly sensitive (1.06% K−1), and diffraction-limited temperature sensing protocol, which potentially helps enhance thermal management in the future miniaturization of electronic components.
{"title":"All-optical nanoscale thermometry with silicon carbide color centers","authors":"Chengying Liu, Haibo Hu, Zhengtong Liu, Shumin Xiao, Junfeng Wang, Yu Zhou, Qinghai Song","doi":"10.1364/prj.525971","DOIUrl":"https://doi.org/10.1364/prj.525971","url":null,"abstract":"All-optical thermometry plays a crucial role in precision temperature measurement across diverse fields. Quantum defects in solids are one of the most promising sensors due to their excellent sensitivity, stability, and biocompatibility. Yet, it faces limitations, such as the microwave heating effect and the complexity of spectral analysis. Addressing these challenges, we introduce a novel approach to nanoscale optical thermometry using quantum defects in silicon carbide (SiC), a material compatible with complementary metal-oxide-semiconductor (CMOS) processes. This method leverages the intensity ratio between anti-Stokes and Stokes emissions from SiC color centers, overcoming the drawbacks of traditional techniques such as optically detected magnetic resonance (ODMR) and zero-phonon line (ZPL) analysis. Our technique provides a real-time, highly sensitive (1.06<jats:italic>%</jats:italic> K<jats:sup>−1</jats:sup>), and diffraction-limited temperature sensing protocol, which potentially helps enhance thermal management in the future miniaturization of electronic components.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"43 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks, such as perception and recognition, but also as key biomimetic elements for the intelligent sensory system of next-generation robotics. However, achieving such a biomimetic nociceptor that can adaptively switch operation mode with a stimulation threshold remains a challenge. Through rational design of material properties and device structures, we realized an easily-fabricated, low-energy, and reconfigurable nociceptor. It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system. With a tunnel silicon nitride (Si3N4) we mimicked the intensity- and rehearsal-triggered jump by means of the tunneling mode transition of Si3N4 dielectric. Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 fJ/μm2. In addition, through the modulation of Si3N4 thickness it is relatively easy to fabricate the device with differing pain degree. Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications.
{"title":"Tunnel silicon nitride manipulated reconfigurable bi-mode nociceptor analog","authors":"Chengdong Yang, Yilong Liu, Linlin Su, Xinwei Li, Lihua Xu, Qimei Cheng","doi":"10.1364/prj.522221","DOIUrl":"https://doi.org/10.1364/prj.522221","url":null,"abstract":"Neuromorphic applications have shown great promise not only for efficient parallel computing mode to hold certain computational tasks, such as perception and recognition, but also as key biomimetic elements for the intelligent sensory system of next-generation robotics. However, achieving such a biomimetic nociceptor that can adaptively switch operation mode with a stimulation threshold remains a challenge. Through rational design of material properties and device structures, we realized an easily-fabricated, low-energy, and reconfigurable nociceptor. It is capable of threshold-triggered adaptive bi-mode jump that resembles the biological alarm system. With a tunnel silicon nitride (<jats:italic>Si</jats:italic><jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>) we mimicked the intensity- and rehearsal-triggered jump by means of the tunneling mode transition of <jats:italic>Si</jats:italic><jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> dielectric. Under threshold signals the device can also express some common synaptic functions with an extremely low energy density of 33.5 <jats:italic>fJ</jats:italic>/<jats:italic>μm</jats:italic><jats:sup>2</jats:sup>. In addition, through the modulation of <jats:italic>Si</jats:italic><jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> thickness it is relatively easy to fabricate the device with differing pain degree. Our nociceptor analog based on a tunneling layer provides an opportunity for the analog pain alarm system and opens up a new path toward threshold-related novel applications.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"46 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yihao Chen, Juntao Duan, Jin Li, Yan Chen, Jiewen Li, Jianan Duan, Xiaochuan Xu, Jiawei Wang
Whispering gallery mode optical microresonators represent a promising avenue for realizing optical analogs of coherent light–atom interactions, circumventing experimental complexities. All-optical analogs of Autler–Townes splitting have been widely demonstrated, harnessing coupled optical microresonators, also known as photonic molecules, wherein the strong coupling between resonant fields enables energy level splitting. Here, we report the characterizations of Autler–Townes splitting in waveguide-coupled microring dimers featuring mismatched sizes. By exploiting backscattering-induced coupling via Rayleigh and Mie scatterers in individual rings, high-order Autler–Townes splitting has been realized, yielding supermode hybridization in a multi-level system. Upon resonance detuning using an integrated phase shifter, intra-cavity coupling-induced splitting becomes almost indistinguishable at the zero-detuning point where the strong inter-cavity coupling counteracts the imbalance of backscattering strengths in individual rings. Through demonstrations on the maturing silicon photonics platform, our findings establish a framework of electrically tunable photonic molecules for coupling-mediated Autler–Townes splitting, offering promising prospects for on-chip signal generation and processing across classical and quantum regimes.
{"title":"High-order Autler–Townes splitting in electrically tunable photonic molecules","authors":"Yihao Chen, Juntao Duan, Jin Li, Yan Chen, Jiewen Li, Jianan Duan, Xiaochuan Xu, Jiawei Wang","doi":"10.1364/prj.525601","DOIUrl":"https://doi.org/10.1364/prj.525601","url":null,"abstract":"Whispering gallery mode optical microresonators represent a promising avenue for realizing optical analogs of coherent light–atom interactions, circumventing experimental complexities. All-optical analogs of Autler–Townes splitting have been widely demonstrated, harnessing coupled optical microresonators, also known as photonic molecules, wherein the strong coupling between resonant fields enables energy level splitting. Here, we report the characterizations of Autler–Townes splitting in waveguide-coupled microring dimers featuring mismatched sizes. By exploiting backscattering-induced coupling via Rayleigh and Mie scatterers in individual rings, high-order Autler–Townes splitting has been realized, yielding supermode hybridization in a multi-level system. Upon resonance detuning using an integrated phase shifter, intra-cavity coupling-induced splitting becomes almost indistinguishable at the zero-detuning point where the strong inter-cavity coupling counteracts the imbalance of backscattering strengths in individual rings. Through demonstrations on the maturing silicon photonics platform, our findings establish a framework of electrically tunable photonic molecules for coupling-mediated Autler–Townes splitting, offering promising prospects for on-chip signal generation and processing across classical and quantum regimes.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"8 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hao Su, Jiawen Qiu, Junlong Li, Rong Chen, Jianbi Le, Xiaoyang Lei, Yongai Zhang, Xiongtu Zhou, Tailiang Guo, Chaoxing Wu
Non-destructive and accurate inspection of gallium nitride light-emitting diode (GaN-LED) epitaxial wafers is important to GaN-LED technology. However, the conventional electroluminescence inspection, the photoluminescence inspection, and the automated optical inspection cannot fulfill the complex technical requirements. In this work, an inspection method and an operation system based on soft single-contact operation, namely, single-contact electroluminescence (SC-EL) inspection, are proposed. The key component of the SC-EL inspection system is a soft conductive probe with an optical fiber inside, and an AC voltage (70Vpp, 100 kHz) is applied between the probe and the ITO electrode under the LED epitaxial wafer. The proposed SC-EL inspection can measure both the electrical and optical parameters of the LED epitaxial wafer at the same time, while not causing mechanical damage to the LED epitaxial wafer. Moreover, it is demonstrated that the SC-EL inspection has a higher electroluminescence wavelength accuracy than photoluminescence inspection. The results show that the non-uniformity of SC-EL inspection is 444.64%, which is much lower than that of photoluminescence inspection. In addition, the obtained electrical parameters from SC-EL can reflect the reverse leakage current (Is) level of the LED epitaxial wafer. The proposed SC-EL inspection can ensure high inspection accuracy without causing damage to the LED epitaxial wafer, which holds promising application in LED technology.
氮化镓发光二极管（GaN-LED）外延片的无损和精确检测对氮化镓发光二极管技术非常重要。然而，传统的电致发光检测、光致发光检测和自动光学检测无法满足复杂的技术要求。本文提出了一种基于软单接触操作的检测方法和操作系统，即单接触电致发光（SC-EL）检测。SC-EL 检测系统的关键部件是一个内含光纤的软导电探针，在探针和 LED 外延片下的 ITO 电极之间施加交流电压（70V pp，100 kHz）。拟议的 SC-EL 检测可同时测量 LED 外延片的电气和光学参数，同时不会对 LED 外延片造成机械损伤。此外，SC-EL 检测比光致发光检测具有更高的电致发光波长精度。结果表明，SC-EL 检测的不均匀度为 444.64%，远低于光致发光检测。此外，SC-EL 检测获得的电参数可以反映 LED 外延片的反向漏电流（I s ）水平。建议的 SC-EL 检测可确保高检测精度，且不会对 LED 外延片造成损坏，在 LED 技术中具有广阔的应用前景。
{"title":"Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation","authors":"Hao Su, Jiawen Qiu, Junlong Li, Rong Chen, Jianbi Le, Xiaoyang Lei, Yongai Zhang, Xiongtu Zhou, Tailiang Guo, Chaoxing Wu","doi":"10.1364/prj.522697","DOIUrl":"https://doi.org/10.1364/prj.522697","url":null,"abstract":"Non-destructive and accurate inspection of gallium nitride light-emitting diode (GaN-LED) epitaxial wafers is important to GaN-LED technology. However, the conventional electroluminescence inspection, the photoluminescence inspection, and the automated optical inspection cannot fulfill the complex technical requirements. In this work, an inspection method and an operation system based on soft single-contact operation, namely, single-contact electroluminescence (SC-EL) inspection, are proposed. The key component of the SC-EL inspection system is a soft conductive probe with an optical fiber inside, and an AC voltage (70<jats:italic>V</jats:italic><jats:sub> <jats:italic>pp</jats:italic> </jats:sub>, 100 kHz) is applied between the probe and the ITO electrode under the LED epitaxial wafer. The proposed SC-EL inspection can measure both the electrical and optical parameters of the LED epitaxial wafer at the same time, while not causing mechanical damage to the LED epitaxial wafer. Moreover, it is demonstrated that the SC-EL inspection has a higher electroluminescence wavelength accuracy than photoluminescence inspection. The results show that the non-uniformity of SC-EL inspection is 444.64%, which is much lower than that of photoluminescence inspection. In addition, the obtained electrical parameters from SC-EL can reflect the reverse leakage current (<jats:italic>I</jats:italic><jats:sub> <jats:italic>s</jats:italic> </jats:sub>) level of the LED epitaxial wafer. The proposed SC-EL inspection can ensure high inspection accuracy without causing damage to the LED epitaxial wafer, which holds promising application in LED technology.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"10 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Simulating the dynamic evolution of physical and molecular systems in a quantum computer is of fundamental interest in many applications. The implementation of dynamics simulation requires efficient quantum algorithms. The Lie-Trotter-Suzuki approximation algorithm, also known as the Trotterization, is basic in Hamiltonian dynamics simulation. A multi-product algorithm that is a linear combination of multiple Trotterizations has been proposed to improve the approximation accuracy. However, implementing such multi-product Trotterization in quantum computers remains challenging due to the requirements of highly controllable and precise quantum entangling operations with high success probability. Here, we report a programmable integrated-photonic quantum simulator based on a linear combination of unitaries, which can be tailored for implementing the linearly combined multiple Trotterizations, and on the simulator we benchmark quantum simulation of Hamiltonian dynamics. We modify the multi-product algorithm by integrating it with oblivious amplitude amplification to simultaneously reach high simulation precision and high success probability. The quantum simulator is devised and fabricated on a large-scale silicon-photonic quantum chip, which allows the initialization, manipulation, and measurement of arbitrary four-qubit states and linearly combined unitary gates. As an example, the quantum simulator is reprogrammed to emulate the dynamics of an electron spin and nuclear spin coupled system. This work promises the practical dynamics simulations of real-world physical and molecular systems in future large-scale quantum computers.
{"title":"Programmable silicon-photonic quantum simulator based on a linear combination of unitaries","authors":"Yue Yu, Yulin Chi, Chonghao Zhai, Jieshan Huang, Qihuang Gong, Jianwei Wang","doi":"10.1364/prj.517294","DOIUrl":"https://doi.org/10.1364/prj.517294","url":null,"abstract":"Simulating the dynamic evolution of physical and molecular systems in a quantum computer is of fundamental interest in many applications. The implementation of dynamics simulation requires efficient quantum algorithms. The Lie-Trotter-Suzuki approximation algorithm, also known as the Trotterization, is basic in Hamiltonian dynamics simulation. A multi-product algorithm that is a linear combination of multiple Trotterizations has been proposed to improve the approximation accuracy. However, implementing such multi-product Trotterization in quantum computers remains challenging due to the requirements of highly controllable and precise quantum entangling operations with high success probability. Here, we report a programmable integrated-photonic quantum simulator based on a linear combination of unitaries, which can be tailored for implementing the linearly combined multiple Trotterizations, and on the simulator we benchmark quantum simulation of Hamiltonian dynamics. We modify the multi-product algorithm by integrating it with oblivious amplitude amplification to simultaneously reach high simulation precision and high success probability. The quantum simulator is devised and fabricated on a large-scale silicon-photonic quantum chip, which allows the initialization, manipulation, and measurement of arbitrary four-qubit states and linearly combined unitary gates. As an example, the quantum simulator is reprogrammed to emulate the dynamics of an electron spin and nuclear spin coupled system. This work promises the practical dynamics simulations of real-world physical and molecular systems in future large-scale quantum computers.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"22 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Optical singularity states, which significantly affect propagation properties of light in free space or optical medium, can be geometrically classified into screw and edge types. These different types of singularity states do not exhibit direct connection, being decoupled from each other in the absence of external perturbations. Here we demonstrate a novel optical process in which a higher-order edge singularity state initially nested in the propagating Gaussian light field gradually involves into a screw singularity with a new-born topological charge determined by order of the edge state. The considered edge state comprises an equal superposition of oppositely charged vortex and antivortex modes. We theoretically and experimentally realize this edge-to-screw conversion process by introducing intrinsic vortex–antivortex interaction. We also present a geometrical representation for mapping this dynamical process, based on the higher-order orbital Poincaré sphere. Within this framework, the edge-to-screw conversion is explained by a mapping of state evolution from the equator to the north or south pole of the Poincaré sphere. Our demonstration provides a novel approach for manipulating singularity state by the intrinsic vortex–antivortex interactions. The presented phenomenon can be also generalized to other wave systems such as matter wave, water wave, and acoustic wave.
{"title":"Optical edge-to-screw singularity state conversions","authors":"Haolin Lin, Junhui Jia, Guohua Liu, Yanwen Hu, Zhen Li, Zhenqiang Chen, Shenhe Fu","doi":"10.1364/prj.520891","DOIUrl":"https://doi.org/10.1364/prj.520891","url":null,"abstract":"Optical singularity states, which significantly affect propagation properties of light in free space or optical medium, can be geometrically classified into screw and edge types. These different types of singularity states do not exhibit direct connection, being decoupled from each other in the absence of external perturbations. Here we demonstrate a novel optical process in which a higher-order edge singularity state initially nested in the propagating Gaussian light field gradually involves into a screw singularity with a new-born topological charge determined by order of the edge state. The considered edge state comprises an equal superposition of oppositely charged vortex and antivortex modes. We theoretically and experimentally realize this edge-to-screw conversion process by introducing intrinsic vortex–antivortex interaction. We also present a geometrical representation for mapping this dynamical process, based on the higher-order orbital Poincaré sphere. Within this framework, the edge-to-screw conversion is explained by a mapping of state evolution from the equator to the north or south pole of the Poincaré sphere. Our demonstration provides a novel approach for manipulating singularity state by the intrinsic vortex–antivortex interactions. The presented phenomenon can be also generalized to other wave systems such as matter wave, water wave, and acoustic wave.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"87 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuailuo Huang, Lei Shen, Gang Qiao, Yuanpeng Ding, Yuyang Gao, Jian Cui, Baolong Zhu, Siyuan Liu, Mingqing Zuo, Jinglong Zhu, Lei Zhang, Jie Luo, Yongqi He, Zhangyuan Chen, Juhao Li
Independent light propagation through one or multiple modes is commonly considered as a basic demand for mode manipulation in few-mode fiber (FMF)- or multimode fiber (MMF)-based optical systems such as transmission links, optical fiber lasers, or distributed optical fiber sensors. However, the insertion of doped-fiber amplifiers always kills the entire effort by inducing significant modal crosstalk. In this paper, we propose the design of doped-fiber amplifiers in FMF-based systems adopting identical multiple-ring-core (MRC) index profiles for both passive and doped fibers to achieve low modal crosstalk. We develop the direct-glass-transition (DGT) modified chemical vapor deposition (MCVD) processing for precise fabrication of few-mode erbium-doped fibers (FM-EDFs) with MRC profiles of both refractive index and erbium-ion doping distribution. Then, a few-mode erbium-doped-fiber amplifier (FM-EDFA) with a maximum gain of 26.08 dB and differential modal gain (DMG) of 2.3 dB is realized based on fabricated FM-EDF matched with a transmission FMF supporting four linearly polarized (LP) modes. With the insertion of the FM-EDFA, 60 + 60 km simultaneous LP01/LP11/LP21/LP02 transmission without inter-modal multiple-input multiple-output digital signal processing (MIMO-DSP) is successfully demonstrated. The proposed design of low-modal-crosstalk doped-fiber amplifiers provides, to our knowledge, new insights into mode manipulation methods in various applications.
{"title":"Low-modal-crosstalk doped-fiber amplifiers in few-mode-fiber-based systems","authors":"Shuailuo Huang, Lei Shen, Gang Qiao, Yuanpeng Ding, Yuyang Gao, Jian Cui, Baolong Zhu, Siyuan Liu, Mingqing Zuo, Jinglong Zhu, Lei Zhang, Jie Luo, Yongqi He, Zhangyuan Chen, Juhao Li","doi":"10.1364/prj.521376","DOIUrl":"https://doi.org/10.1364/prj.521376","url":null,"abstract":"Independent light propagation through one or multiple modes is commonly considered as a basic demand for mode manipulation in few-mode fiber (FMF)- or multimode fiber (MMF)-based optical systems such as transmission links, optical fiber lasers, or distributed optical fiber sensors. However, the insertion of doped-fiber amplifiers always kills the entire effort by inducing significant modal crosstalk. In this paper, we propose the design of doped-fiber amplifiers in FMF-based systems adopting identical multiple-ring-core (MRC) index profiles for both passive and doped fibers to achieve low modal crosstalk. We develop the direct-glass-transition (DGT) modified chemical vapor deposition (MCVD) processing for precise fabrication of few-mode erbium-doped fibers (FM-EDFs) with MRC profiles of both refractive index and erbium-ion doping distribution. Then, a few-mode erbium-doped-fiber amplifier (FM-EDFA) with a maximum gain of 26.08 dB and differential modal gain (DMG) of 2.3 dB is realized based on fabricated FM-EDF matched with a transmission FMF supporting four linearly polarized (LP) modes. With the insertion of the FM-EDFA, 60 + 60 km simultaneous <jats:italic>LP</jats:italic><jats:sub>01</jats:sub>/<jats:italic>LP</jats:italic><jats:sub>11</jats:sub>/<jats:italic>LP</jats:italic><jats:sub>21</jats:sub>/<jats:italic>LP</jats:italic><jats:sub>02</jats:sub> transmission without inter-modal multiple-input multiple-output digital signal processing (MIMO-DSP) is successfully demonstrated. The proposed design of low-modal-crosstalk doped-fiber amplifiers provides, to our knowledge, new insights into mode manipulation methods in various applications.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"35 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dexiang Zhu, Zhouyuanhang Wang, Xiangyu Xu, Wenyu Du, Wei Huang, Yan Kuai, Benli Yu, Jianzhong Zheng, Zhijia Hu, Siqi Li
Circularly polarized lasers play a pivotal role in classical optics, nanophotonics, and quantum optical information processing, while their fabrication remains complex. This article begins with examining the interactions between stimulated emission and chiral matter, outlining a simple strategy for producing circularly polarized lasing from chiral metal-organic frameworks (MOFs), such as the zeolitic imidazolate framework (ZIF), embedded with achiral laser dyes (L/D-ZIF⊃dyes). It is found that the stimulated emission threshold and intensity are influenced by the interplay between the chiral polarization of the pump light and the inherent chirality of the MOF nanoparticles. We further present the design of a chiral vertical-cavity surface-emitting laser (VCSEL), comprising an L/D-ZIF⊃dyes solid-state film sandwiched between a high-reflectivity distributed Bragg reflector (DBR) mirror and a silver film. The cavity-based lasing exhibits higher asymmetry between emitting left-handed and right-handed polarized light compared to chiral spontaneous emission (SE) and amplified spontaneous emission (ASE), with an asymmetry value glum of approximately ±0.31. This value is nearly four-fold greater than that of SE and twice that of ASE. Our findings reveal a new approach to amplify chiral signals, promoting the comprehension and application of chiral–matter interactions, and offering a simple yet effective strategy to fabricate chiral lasers.
圆偏振激光器在经典光学、纳米光子学和量子光学信息处理中发挥着举足轻重的作用，但其制造过程仍然十分复杂。本文首先探讨了受激发射与手性物质之间的相互作用，概述了利用手性金属有机框架（MOF）（如沸石咪唑框架（ZIF））产生圆偏振激光的简单策略，并嵌入了非手性激光染料（L/D-ZIF⊃dyes）。研究发现，受激发射阈值和强度受泵浦光的手性偏振和 MOF 纳米粒子固有手性之间相互作用的影响。我们进一步介绍了手性垂直腔面发射激光器（VCSEL）的设计，它由夹在高反射率分布式布拉格反射镜（DBR）和银膜之间的 L/D-ZIF⊃dyes 固体薄膜组成。与手性自发辐射（SE）和放大自发辐射（ASE）相比，基于空腔的激光在发射左手偏振光和右手偏振光之间表现出更高的不对称性，不对称性值 g lum 约为±0.31。这一数值几乎是 SE 的四倍，是 ASE 的两倍。我们的发现揭示了一种放大手性信号的新方法，促进了对手性物质相互作用的理解和应用，并为制造手性激光器提供了一种简单而有效的策略。
{"title":"Circularly polarized lasing from chiral metal-organic frameworks","authors":"Dexiang Zhu, Zhouyuanhang Wang, Xiangyu Xu, Wenyu Du, Wei Huang, Yan Kuai, Benli Yu, Jianzhong Zheng, Zhijia Hu, Siqi Li","doi":"10.1364/prj.520965","DOIUrl":"https://doi.org/10.1364/prj.520965","url":null,"abstract":"Circularly polarized lasers play a pivotal role in classical optics, nanophotonics, and quantum optical information processing, while their fabrication remains complex. This article begins with examining the interactions between stimulated emission and chiral matter, outlining a simple strategy for producing circularly polarized lasing from chiral metal-organic frameworks (MOFs), such as the zeolitic imidazolate framework (ZIF), embedded with achiral laser dyes (L/D-<jats:italic>ZIF</jats:italic><jats:italic>⊃</jats:italic><jats:italic>dyes</jats:italic>). It is found that the stimulated emission threshold and intensity are influenced by the interplay between the chiral polarization of the pump light and the inherent chirality of the MOF nanoparticles. We further present the design of a chiral vertical-cavity surface-emitting laser (VCSEL), comprising an L/D-<jats:italic>ZIF</jats:italic><jats:italic>⊃</jats:italic><jats:italic>dyes</jats:italic> solid-state film sandwiched between a high-reflectivity distributed Bragg reflector (DBR) mirror and a silver film. The cavity-based lasing exhibits higher asymmetry between emitting left-handed and right-handed polarized light compared to chiral spontaneous emission (SE) and amplified spontaneous emission (ASE), with an asymmetry value <jats:italic>g</jats:italic><jats:sub> <jats:italic>lum</jats:italic> </jats:sub> of approximately ±0.31. This value is nearly four-fold greater than that of SE and twice that of ASE. Our findings reveal a new approach to amplify chiral signals, promoting the comprehension and application of chiral–matter interactions, and offering a simple yet effective strategy to fabricate chiral lasers.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"89 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhenxin Wang, Alexey V. Krasavin, Chenxinyu Pan, Junsheng Zheng, Zhiyong Li, Xin Guo, Anatoly V. Zayats, Limin Tong, Pan Wang
Ultrathin plasmonic nanostructures offer an unparalleled opportunity for the study of light–matter interactions at the nanoscale and realization of compact nanophotonic devices. In this study, we introduce an ultrathin gold nanoribbon array and demonstrate an electric approach to actively tuning its plasmonic resonance, which leveraging the extreme light confinement capability in the ultrathin plasmonic nanostructure and a robust nanoscale electro-optical effect in indium tin oxide. Optimizing the design (to a total thickness as small as 12 nm for a 2-nm-thick gold nanoribbon array), we numerically demonstrate a spectral shift in the plasmonic resonance up to 36 nm along with an approximately 16% change in the transmission at a gate voltage below 1.7 V at the wavelength of 1.47 μm. This work presents progress towards electric tuning of plasmonic resonances in ultrathin metallic nanostructures for various applications including surface-enhanced spectroscopy, spontaneous emission enhancement, and optical modulation.
{"title":"Electric tuning of plasmonic resonances in ultrathin gold nanoribbon arrays","authors":"Zhenxin Wang, Alexey V. Krasavin, Chenxinyu Pan, Junsheng Zheng, Zhiyong Li, Xin Guo, Anatoly V. Zayats, Limin Tong, Pan Wang","doi":"10.1364/prj.522533","DOIUrl":"https://doi.org/10.1364/prj.522533","url":null,"abstract":"Ultrathin plasmonic nanostructures offer an unparalleled opportunity for the study of light–matter interactions at the nanoscale and realization of compact nanophotonic devices. In this study, we introduce an ultrathin gold nanoribbon array and demonstrate an electric approach to actively tuning its plasmonic resonance, which leveraging the extreme light confinement capability in the ultrathin plasmonic nanostructure and a robust nanoscale electro-optical effect in indium tin oxide. Optimizing the design (to a total thickness as small as 12 nm for a 2-nm-thick gold nanoribbon array), we numerically demonstrate a spectral shift in the plasmonic resonance up to 36 nm along with an approximately 16% change in the transmission at a gate voltage below 1.7 V at the wavelength of 1.47 μm. This work presents progress towards electric tuning of plasmonic resonances in ultrathin metallic nanostructures for various applications including surface-enhanced spectroscopy, spontaneous emission enhancement, and optical modulation.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"77 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An integrated photonic circuit architecture to perform a modified-convolution operation based on the discrete fractional Fourier transform (DFrFT) is introduced. This is accomplished by utilizing two nonuniformly coupled waveguide lattices with equally spaced eigenmode spectra, the lengths of which are chosen so that the DFrFT and its inverse operations are achieved. A programmable modulator array is interlaced so that the required fractional convolution operation is performed. Numerical simulations demonstrate that the proposed architecture can effectively perform smoothing and edge detection tasks even for noisy input signals, which is further verified by electromagnetic wave simulations. Notably, mild lattice defects do not jeopardize the architecture performance, showing its resilience to manufacturing errors.
{"title":"Integrated photonic fractional convolution accelerator","authors":"Kevin Zelaya, Mohammed-Ali Miri","doi":"10.1364/prj.517491","DOIUrl":"https://doi.org/10.1364/prj.517491","url":null,"abstract":"An integrated photonic circuit architecture to perform a modified-convolution operation based on the discrete fractional Fourier transform (DFrFT) is introduced. This is accomplished by utilizing two nonuniformly coupled waveguide lattices with equally spaced eigenmode spectra, the lengths of which are chosen so that the DFrFT and its inverse operations are achieved. A programmable modulator array is interlaced so that the required fractional convolution operation is performed. Numerical simulations demonstrate that the proposed architecture can effectively perform smoothing and edge detection tasks even for noisy input signals, which is further verified by electromagnetic wave simulations. Notably, mild lattice defects do not jeopardize the architecture performance, showing its resilience to manufacturing errors.","PeriodicalId":20048,"journal":{"name":"Photonics Research","volume":"20 1","pages":""},"PeriodicalIF":7.6,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141869354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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