S. Acharya, D. Pashov, M. Katsnelson, M. Schilfgaarde
Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Here we report predictions from an advanced self-consistent many body perturbative theory and show that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses . With respect to two-particle properties, significant differences with Si appear. We report the excitonic spectrum for both q=0 and finite q, and show that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about $sim$1.5 eV, which may play a crucial role in application of BAs in optoelectronics.
{"title":"One‐particle and excitonic band structure in cubic Boron Arsenide","authors":"S. Acharya, D. Pashov, M. Katsnelson, M. Schilfgaarde","doi":"10.1002/pssr.202300156","DOIUrl":"https://doi.org/10.1002/pssr.202300156","url":null,"abstract":"Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Here we report predictions from an advanced self-consistent many body perturbative theory and show that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses . With respect to two-particle properties, significant differences with Si appear. We report the excitonic spectrum for both q=0 and finite q, and show that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about $sim$1.5 eV, which may play a crucial role in application of BAs in optoelectronics.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"203 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81089195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}