S. Saha, Shrivatch Sankar, Sk Shafaat Saud Nikor, S. Arafin
{"title":"A Review of Intercalation of Rare Gas Solids on Graphene and Hexagonal Boron Nitride","authors":"S. Saha, Shrivatch Sankar, Sk Shafaat Saud Nikor, S. Arafin","doi":"10.1002/pssr.202300066","DOIUrl":"https://doi.org/10.1002/pssr.202300066","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90438088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Enhancement of thermoelectric performance by doping to reduce degeneracy","authors":"Yunji Shi, Rundong Wan, Zhengfu Zhang, G. Tian","doi":"10.1002/pssr.202300133","DOIUrl":"https://doi.org/10.1002/pssr.202300133","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84787053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zhen Huang, X. Renshaw Wang, Shixiong Zhang, Chuan Li
The concept of ‘Quantum Materials’, of which the physical properties are beyond a simple description of the laws of classical physics, has been gaining widespread attention across various disciplines in recent years. This area of research encompasses a broad range of materials, including but not limited to two-dimensional materials, unconventional superconductors, multiferroics, complex oxide interfaces and topological quantum materials. As a result, the research of quantum materials provides a vivid platform that brings both scientists and engineers to explore the frontiers of materials science and applications. To fully realize the potential of those quantum materials, it is essential to design them on demand. Fortunately, due to the rapid development of modern techniques, the design strategy of quantum materials has become highly sophisticated and efficient. Approaches that are associated with dimensional confinement, doping, strain, interface engineering and electrical gating are all applicable to the design of quantum materials. Based on their strongly correlated degrees of freedom, the designed heterointerfaces between quantum materials are expected to have great application potentials in various fields, as sketched in Figure 1. Therefore, there is an urgent need for timely reports on connecting the designs and applications of quantum material interfaces. In this special issue, a collection of articles sheds light on the design of quantum materials to offer greater flexibility in functional heterostructures. In article 2200441, Liu et al. demonstrated the correlation between spatial confinement and Rashba spin-orbit coupling at the LaAlO3/KTaO3 heterointerface, of which the large spin-splitting energy and enhanced spin-orbit coupling are essential in exploring Majorana fermions. For the heterostructure that consists of different materials and lattices, strain is another effective way to modify the crystal symmetry and lattice structure in controlling physical properties. In article 2200398, the formation mechanisms of misfit dislocations networks in the quantum-well-type heterostructures were investigated theoretically, allowing a better understanding of the defect formation and local strain relaxation in practical devices. Furthermore, article 2200491 experimentally presented the anisotropic behaviour and sign reversal of magnetoresistance, which is intrinsically coupled to the crystal symmetry in the epitaxially strained SrRuO3/SrTiO3 heterostructures. Besides the lattice structure, the electronic structure of quantum material heterostructures can be significantly modified by doping. article 2200348 showed an example of co-doping via ion implantation, where the artificially induced Co and Nd ions cause the high magnetization in two-dimensional MoS2 at both room and low temperatures. Moreover, as an example of electrical gating, article 2200378 explored an emerging modulation mean of electrochemical gating on quantum functionalities and de
{"title":"Functional Heterointerfaces of Quantum Materials by Design","authors":"Zhen Huang, X. Renshaw Wang, Shixiong Zhang, Chuan Li","doi":"10.1002/pssr.202300153","DOIUrl":"https://doi.org/10.1002/pssr.202300153","url":null,"abstract":"The concept of ‘Quantum Materials’, of which the physical properties are beyond a simple description of the laws of classical physics, has been gaining widespread attention across various disciplines in recent years. This area of research encompasses a broad range of materials, including but not limited to two-dimensional materials, unconventional superconductors, multiferroics, complex oxide interfaces and topological quantum materials. As a result, the research of quantum materials provides a vivid platform that brings both scientists and engineers to explore the frontiers of materials science and applications. To fully realize the potential of those quantum materials, it is essential to design them on demand. Fortunately, due to the rapid development of modern techniques, the design strategy of quantum materials has become highly sophisticated and efficient. Approaches that are associated with dimensional confinement, doping, strain, interface engineering and electrical gating are all applicable to the design of quantum materials. Based on their strongly correlated degrees of freedom, the designed heterointerfaces between quantum materials are expected to have great application potentials in various fields, as sketched in Figure 1. Therefore, there is an urgent need for timely reports on connecting the designs and applications of quantum material interfaces. In this special issue, a collection of articles sheds light on the design of quantum materials to offer greater flexibility in functional heterostructures. In article 2200441, Liu et al. demonstrated the correlation between spatial confinement and Rashba spin-orbit coupling at the LaAlO3/KTaO3 heterointerface, of which the large spin-splitting energy and enhanced spin-orbit coupling are essential in exploring Majorana fermions. For the heterostructure that consists of different materials and lattices, strain is another effective way to modify the crystal symmetry and lattice structure in controlling physical properties. In article 2200398, the formation mechanisms of misfit dislocations networks in the quantum-well-type heterostructures were investigated theoretically, allowing a better understanding of the defect formation and local strain relaxation in practical devices. Furthermore, article 2200491 experimentally presented the anisotropic behaviour and sign reversal of magnetoresistance, which is intrinsically coupled to the crystal symmetry in the epitaxially strained SrRuO3/SrTiO3 heterostructures. Besides the lattice structure, the electronic structure of quantum material heterostructures can be significantly modified by doping. article 2200348 showed an example of co-doping via ion implantation, where the artificially induced Co and Nd ions cause the high magnetization in two-dimensional MoS2 at both room and low temperatures. Moreover, as an example of electrical gating, article 2200378 explored an emerging modulation mean of electrochemical gating on quantum functionalities and de","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90484610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Chen, J. H. Zhang, G. Zhou, W. Zhai, L. Lin, Z. B. Yan, C. Chen, X. Jiang, C. Lu, J. Liu
{"title":"Carrier‐modulated anomalous electron transports in electrolyte‐gated SrTiO3","authors":"P. Chen, J. H. Zhang, G. Zhou, W. Zhai, L. Lin, Z. B. Yan, C. Chen, X. Jiang, C. Lu, J. Liu","doi":"10.1002/pssr.202300111","DOIUrl":"https://doi.org/10.1002/pssr.202300111","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81973362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Genin, E. Lipatov, M. Shulepov, V. Vins, A. Yelisseyev, I. Izmailov, A. Savvin, A. Dormidonov
{"title":"Microjoule‐range diamond NV‐laser with optical pumping","authors":"D. Genin, E. Lipatov, M. Shulepov, V. Vins, A. Yelisseyev, I. Izmailov, A. Savvin, A. Dormidonov","doi":"10.1002/pssr.202300062","DOIUrl":"https://doi.org/10.1002/pssr.202300062","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80397527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chunbao Feng, Xinchun Luo, Qing Zhao, Changhe Wu, Tao Hu, Shichang Li, Shengnan Duan, Gang Tang, Gang Zhang, Dengfeng Li
{"title":"Structural, Electronic, Optical, and Mechanical Properties of Cu(I)Au(III)‐Based Double Perovskites: A First‐Principles Study","authors":"Chunbao Feng, Xinchun Luo, Qing Zhao, Changhe Wu, Tao Hu, Shichang Li, Shengnan Duan, Gang Tang, Gang Zhang, Dengfeng Li","doi":"10.1002/pssr.202300128","DOIUrl":"https://doi.org/10.1002/pssr.202300128","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80164551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Acharya, D. Pashov, M. Katsnelson, M. Schilfgaarde
Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Here we report predictions from an advanced self-consistent many body perturbative theory and show that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses . With respect to two-particle properties, significant differences with Si appear. We report the excitonic spectrum for both q=0 and finite q, and show that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about $sim$1.5 eV, which may play a crucial role in application of BAs in optoelectronics.
{"title":"One‐particle and excitonic band structure in cubic Boron Arsenide","authors":"S. Acharya, D. Pashov, M. Katsnelson, M. Schilfgaarde","doi":"10.1002/pssr.202300156","DOIUrl":"https://doi.org/10.1002/pssr.202300156","url":null,"abstract":"Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Here we report predictions from an advanced self-consistent many body perturbative theory and show that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses . With respect to two-particle properties, significant differences with Si appear. We report the excitonic spectrum for both q=0 and finite q, and show that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about $sim$1.5 eV, which may play a crucial role in application of BAs in optoelectronics.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81089195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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