CrSe2 monolayer is a recently synthesized ferromagnetic material exhibiting remarkable environmental stability. By using first‐principles calculations, a comprehensive study on the magnetic phase diagram of CrSe2 monolayer under conditions of electron/hole doping and different strains is presented. It is demonstrated that applying compressive strain can induce a magnetic phase transition from the ferromagnetic order to a Hexagon ferrimagnetic order. Moreover, the results reveal that electron doping can attenuate the ferromagnetism in the monolayer. This work thus provides insights into the design of CrSe2‐based spintronic devices.
{"title":"A Ferrimagnetic Order of CrSe2 Monolayer Under Strain and Charge Doping","authors":"Xinlong Yang, Meng Li, F. Zheng","doi":"10.1002/pssr.202300188","DOIUrl":"https://doi.org/10.1002/pssr.202300188","url":null,"abstract":"CrSe2 monolayer is a recently synthesized ferromagnetic material exhibiting remarkable environmental stability. By using first‐principles calculations, a comprehensive study on the magnetic phase diagram of CrSe2 monolayer under conditions of electron/hole doping and different strains is presented. It is demonstrated that applying compressive strain can induce a magnetic phase transition from the ferromagnetic order to a Hexagon ferrimagnetic order. Moreover, the results reveal that electron doping can attenuate the ferromagnetism in the monolayer. This work thus provides insights into the design of CrSe2‐based spintronic devices.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88019648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hao Liu, Huan Zheng, Yamei Wang, Can Huang, Chunlan Ma, Yan Zhu, Hao Yang, L. Ling, Lei Zhang, Jiyu Fan
{"title":"Long‐range magnetic exchange coupling in quasi‐two‐dimensional CrTe ferromagnetic thin films","authors":"Hao Liu, Huan Zheng, Yamei Wang, Can Huang, Chunlan Ma, Yan Zhu, Hao Yang, L. Ling, Lei Zhang, Jiyu Fan","doi":"10.1002/pssr.202300209","DOIUrl":"https://doi.org/10.1002/pssr.202300209","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74946642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
L. Bondarenko, A. Tupchaya, T. V. Utas, Y. E. Vekovshinin, D. Gruznev, A. Mihalyuk, S. Eremeev, A. Zotov, A. Saranin
{"title":"Atomic‐scale observations of the immiscible melted metals confined in a single‐atom layer","authors":"L. Bondarenko, A. Tupchaya, T. V. Utas, Y. E. Vekovshinin, D. Gruznev, A. Mihalyuk, S. Eremeev, A. Zotov, A. Saranin","doi":"10.1002/pssr.202300254","DOIUrl":"https://doi.org/10.1002/pssr.202300254","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78660621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. E. Sideltsev, A. Piryazev, A. Akhkiamova, M. V. Gapanovich, D. Anokhin, D. K. Sagdullina, A.S. Novikov, D. Ivanov, A. Akkuratov
{"title":"Improving charge mobilities of novel push‐pull small molecules through thermally induced self‐ordering","authors":"M. E. Sideltsev, A. Piryazev, A. Akhkiamova, M. V. Gapanovich, D. Anokhin, D. K. Sagdullina, A.S. Novikov, D. Ivanov, A. Akkuratov","doi":"10.1002/pssr.202300223","DOIUrl":"https://doi.org/10.1002/pssr.202300223","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"51 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88926005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Steve Kamau, J. Hou, N. Hurley, Khadijah Alnasser, Siraj Sidhik, E. Hathaway, R. Rodriguez, Anupama Kaul, J. Cui, A. Mohite, Yuankun Lin
{"title":"Reversible and Irreversible Layer Edge Relaxation in Laser‐radiation Hardened 2D Organic‐inorganic Perovskite Crystals","authors":"Steve Kamau, J. Hou, N. Hurley, Khadijah Alnasser, Siraj Sidhik, E. Hathaway, R. Rodriguez, Anupama Kaul, J. Cui, A. Mohite, Yuankun Lin","doi":"10.1002/pssr.202300221","DOIUrl":"https://doi.org/10.1002/pssr.202300221","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91369192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Solonenko, J. Strube, Jannick Fammels, E. Fisslthaler, Volker Röbisch, K. Howell, T. Sinani, Julian Pilz, V. Pashchenko, S. Risquez, M. Moridi, Gudrun Bruckner
Pseudobinary nitride alloys display enhanced piezoelectric properties compared to their nonalloyed counterparts enabling their wide application in high‐performance transducers and acoustic wave resonators. Their fabrication remains challenging because of their inherently stochastic nature, which requires in‐depth understanding of the film growth dynamics and the interplay of deposition parameters. Herein, thin Al1−xYxN films are produced with varied yttrium content in the range from x = 0.09 to 0.28 on a gradient seed layer on 200‐mm Si substrates and investigated via various X‐ray diffraction methods, high‐resolution scanning transmission electron microscopy, nanoindentation, and atomic force microscopy. Bulk acoustic wave resonators, solidly mounted on a multilayer acoustic isolation, are fabricated to analyze the piezoelectric performance of the films and to extract corresponding material parameters via fitting of the high‐frequency electrical response by 1D Mason's model. The trend of declining coupling is explained by the lattice softening and the increase in electron density, experimentally observed by monitoring reduced elastic modulus and dielectric constant values, respectively. The absence of expected enhancement of the piezoelectric modulus is interpreted by the presence of oxygen impurities, facilitating the inhomogeneous strain of the AlYN lattice, which effectively cancels the energy flattening phenomenon, found in III–V pseudobinary alloys.
{"title":"AlYN Thin Films with High Y Content: Microstructure and Performance","authors":"D. Solonenko, J. Strube, Jannick Fammels, E. Fisslthaler, Volker Röbisch, K. Howell, T. Sinani, Julian Pilz, V. Pashchenko, S. Risquez, M. Moridi, Gudrun Bruckner","doi":"10.1002/pssr.202300193","DOIUrl":"https://doi.org/10.1002/pssr.202300193","url":null,"abstract":"Pseudobinary nitride alloys display enhanced piezoelectric properties compared to their nonalloyed counterparts enabling their wide application in high‐performance transducers and acoustic wave resonators. Their fabrication remains challenging because of their inherently stochastic nature, which requires in‐depth understanding of the film growth dynamics and the interplay of deposition parameters. Herein, thin Al1−xYxN films are produced with varied yttrium content in the range from x = 0.09 to 0.28 on a gradient seed layer on 200‐mm Si substrates and investigated via various X‐ray diffraction methods, high‐resolution scanning transmission electron microscopy, nanoindentation, and atomic force microscopy. Bulk acoustic wave resonators, solidly mounted on a multilayer acoustic isolation, are fabricated to analyze the piezoelectric performance of the films and to extract corresponding material parameters via fitting of the high‐frequency electrical response by 1D Mason's model. The trend of declining coupling is explained by the lattice softening and the increase in electron density, experimentally observed by monitoring reduced elastic modulus and dielectric constant values, respectively. The absence of expected enhancement of the piezoelectric modulus is interpreted by the presence of oxygen impurities, facilitating the inhomogeneous strain of the AlYN lattice, which effectively cancels the energy flattening phenomenon, found in III–V pseudobinary alloys.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85204102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Comparative Studies of Grapheme and Phosphorene Zigzag Edge Nanoribbons with Antidots","authors":"S. Krompiewski","doi":"10.1002/pssr.202300217","DOIUrl":"https://doi.org/10.1002/pssr.202300217","url":null,"abstract":"","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81428994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vishal Kumar, G. Shukla, Nishant Shahi, Sanjay Singh
Topologically protected nontrivial spin structures attract significant interest in condensed matter physics for their utilization in low‐power‐consumption spintronics devices, memory devices, etc. The topological Hall effect (THE) is an additional Hall resistivity in the system arising from real‐space Berry curvature picked up by conduction electron passing through the nontrivial spin texture. Compared to expensive neutron diffraction measurements, THE is often used as a cost‐effective tool to investigate nontrivial spin texture in the materials. In the present manuscript, THE in the (Mn1−xFex)3.25Ge (x = 0.4) alloy is studied using magneto‐transport measurements. Maximum THE is found in the system about 0.65 μΩ cm at 150 K, which is in contrast to the pristine Mn3Ge that has zero THE. The strong temperature variation of THE suggests that the noncoplanar spin structure due to competition among the magneto‐crystalline anisotropy, antiferromagnetic coupling, and ferromagnetic exchange interaction is the main source of THE in the present system. Herein, it is shown that chemical doping can be an effective way to induce THE in the material with vanishing THE in its parent phase.
{"title":"Topological Hall Effect in (Mn1−xFex)3.25Ge (x = 0.4) Hexagonal Magnet","authors":"Vishal Kumar, G. Shukla, Nishant Shahi, Sanjay Singh","doi":"10.1002/pssr.202300174","DOIUrl":"https://doi.org/10.1002/pssr.202300174","url":null,"abstract":"Topologically protected nontrivial spin structures attract significant interest in condensed matter physics for their utilization in low‐power‐consumption spintronics devices, memory devices, etc. The topological Hall effect (THE) is an additional Hall resistivity in the system arising from real‐space Berry curvature picked up by conduction electron passing through the nontrivial spin texture. Compared to expensive neutron diffraction measurements, THE is often used as a cost‐effective tool to investigate nontrivial spin texture in the materials. In the present manuscript, THE in the (Mn1−xFex)3.25Ge (x = 0.4) alloy is studied using magneto‐transport measurements. Maximum THE is found in the system about 0.65 μΩ cm at 150 K, which is in contrast to the pristine Mn3Ge that has zero THE. The strong temperature variation of THE suggests that the noncoplanar spin structure due to competition among the magneto‐crystalline anisotropy, antiferromagnetic coupling, and ferromagnetic exchange interaction is the main source of THE in the present system. Herein, it is shown that chemical doping can be an effective way to induce THE in the material with vanishing THE in its parent phase.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81004847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There is a tradeoff between the high photocurrent and the low dark current for the gallium oxide (Ga2O3) metal–semiconductor–metal photodetectors (PDs). Achieving a balance between the photocurrent and dark current is crucial to the final device's performance. Herein, indium zinc oxide (IZO) is introduced between the Ga2O3 and the metal contact for the first time. By adjusting the IZO interlayer thickness and the annealing temperature, the barrier height between Ga2O3 and the metal contact can be well controlled. In detail, the β‐Ga2O3 film is epitaxially grown by mist chemical vapor deposition, and the different thicknesses of IZO are deposited under Ti/Au electrode. The devices with 10 nm IZO interlayer and 300 °C annealing temperatures have an obvious device performance improvement, which has achieved responsivity (R) of 508 A W−1, a high peak detectivity (D*) of 2.65 × 1015 Jones, and a raised‐up relaxation time of 0.25 s (fast) and 1.22 s (slow). Compared with the device without IZO, the performances get obviously enhanced. Hence, the work hopes to promote the development of the β‐Ga2O3 solar‐blind deep UV PDs.
{"title":"Boosting the Performance of β‐Ga2O3 Solar‐Blind Deep UV Photodetectors by Balancing the Photocurrent and Dark Current via the IZO Interlayer","authors":"Zeyulin Zhang, Qingwen Song, Hao Yuan, Fengyu Du, Runping Ma, Dinghe Liu, Yuming Zhang, P. Yan, Dazheng Chen, Chunfu Zhang, Yue Hao","doi":"10.1002/pssr.202300172","DOIUrl":"https://doi.org/10.1002/pssr.202300172","url":null,"abstract":"There is a tradeoff between the high photocurrent and the low dark current for the gallium oxide (Ga2O3) metal–semiconductor–metal photodetectors (PDs). Achieving a balance between the photocurrent and dark current is crucial to the final device's performance. Herein, indium zinc oxide (IZO) is introduced between the Ga2O3 and the metal contact for the first time. By adjusting the IZO interlayer thickness and the annealing temperature, the barrier height between Ga2O3 and the metal contact can be well controlled. In detail, the β‐Ga2O3 film is epitaxially grown by mist chemical vapor deposition, and the different thicknesses of IZO are deposited under Ti/Au electrode. The devices with 10 nm IZO interlayer and 300 °C annealing temperatures have an obvious device performance improvement, which has achieved responsivity (R) of 508 A W−1, a high peak detectivity (D*) of 2.65 × 1015 Jones, and a raised‐up relaxation time of 0.25 s (fast) and 1.22 s (slow). Compared with the device without IZO, the performances get obviously enhanced. Hence, the work hopes to promote the development of the β‐Ga2O3 solar‐blind deep UV PDs.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"515 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77089497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：