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First‐Principles Studies of Electronic Structures and Optical Properties of Cobalt‐Doped VO2 掺杂钴的VO2的电子结构和光学性质的第一性原理研究
Pub Date : 2023-07-01 DOI: 10.1002/pssb.202300240
Jinyu Wan, Xuejiao Li
First‐principles calculations based on density functional theory (DFT) are used to investigate the phase transition characteristics, electronic structures, and optical properties of pure and Co‐doped VO2 (M1 and R phase). Studies show that the metal‐to‐insulator phase transition temperature of VO2 is significantly reduced after Co doping, which is correlated to the decrease of bandgap value. Besides, the decrease of the energy required for electron transition of M1‐phase Co‐doped VO2 corresponds to the imaginary part of the dielectric peak moving to the low‐energy region. For both the M1‐ and R‐phase VO2, the visible light transmissivity of the Co‐doped VO2 is increased than that of pure VO2, which is beneficial to the application of VO2 film as visible windows. In addition, the absorptivity and reflectivity of Co‐doped R‐phase VO2 in the infrared light range are larger than those of M1‐phase VO2, indicating that the Co‐doped VO2 can block more infrared light at higher temperature to fulfill the purpose of lowering temperature. Overall, these results give new insights for the application of Co‐doped VO2 as a photoenergy material to regulate the room temperature.
基于密度泛函理论(DFT)的第一性原理计算被用于研究纯VO2和Co掺杂VO2 (M1和R相)的相变特性、电子结构和光学性质。研究表明,掺杂Co后,VO2的金属-绝缘体相变温度显著降低,这与带隙值的减小有关。此外,M1相Co掺杂VO2的电子跃迁所需能量的降低与介电峰虚部向低能区移动相对应。对于M1相和R相的VO2, Co掺杂的VO2的可见光透过率都比纯VO2高,这有利于VO2薄膜作为可见窗口的应用。此外,Co掺杂R相VO2在红外光范围内的吸收率和反射率均大于M1相VO2,表明Co掺杂VO2在较高温度下可以阻挡更多的红外光,从而达到降低温度的目的。总的来说,这些结果为Co掺杂VO2作为调节室温的光能材料的应用提供了新的见解。
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引用次数: 0
Spin–Charge Conversion in Hybrid Structure PbZrO3/Y3Fe5O12/Pt 杂化结构PbZrO3/Y3Fe5O12/Pt的自旋-电荷转换
Pub Date : 2023-07-01 DOI: 10.1002/pssb.202300134
Rui Yu, Yong Wang, Teng Li, Feng Chen, Jiefeng Cao, F. Zhu, Xiangzhi Zhang, R. Tai
Multifunctional oxide heterostructures exhibiting magnetoelectric properties show great potential in advanced applications which are attracting a number of recent investigations. Herein, hybrid structures are presented including the antiferroelectricity film PbZrO3 (PZO) and the ferrimagnetic insulator (FMI) yttrium iron garnet (Y3Fe5O12, (YIG)) film by means of pulse laser deposition and magnetron sputtering, respectively. A visible double ferroelectricity hysteresis loop for PZO at low electrical field and the distinct X‐ray magnetic circular dichroism (XMCD) spectra for YIG are obtained. To study the spin current transfer processes between platinum (Pt) and the PZO/YIG system, the Pt film is deposited on the PZO/YIG bilayers as the conversion detector and the spin–charge conversion voltage can be obtained via inverse spin Hall effect (ISHE) under thermal gradient excitation. These results indicate that the hybrid structure PZO/YIG/Pt provides a potential route to realize an electric field control of spin–charge conversion and is instructive for future low‐power multiferroic heterostructures‐based spintronic devices.
具有磁电性质的多功能氧化物异质结构在高级应用方面具有巨大的潜力,近年来引起了许多研究。本文采用脉冲激光沉积和磁控溅射的方法分别制备了反铁电薄膜PbZrO3 (PZO)和铁磁绝缘体(FMI)钇铁石榴石(Y3Fe5O12, (YIG))薄膜。在低电场条件下,PZO具有明显的双铁电磁滞回线,YIG具有明显的X射线磁圆二色性(XMCD)谱。为了研究铂(Pt)与PZO/YIG体系之间的自旋电流传递过程,将Pt薄膜作为转换探测器沉积在PZO/YIG双分子层上,在热梯度激发下通过逆自旋霍尔效应(ISHE)获得自旋电荷转换电压。这些结果表明,混合结构PZO/YIG/Pt为实现自旋-电荷转换的电场控制提供了一条潜在的途径,对未来基于低功率多铁异质结构的自旋电子器件具有指导意义。
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引用次数: 0
Backside Absorbing Layer Microscopy: Monolayer Counting in 2D Crystal Flakes 背面吸收层显微镜:单层计数在二维晶体片
Pub Date : 2023-07-01 DOI: 10.1002/pssb.202300068
D. Ausserré, Refahi Abou Khachfe, T. Taniguchi, Kenji Watanabe, F. Vialla
The properties of two‐dimensional (2D) material stacks critically depend on the number of monolayers (m) in the stack. It is therefore important to quantify this number, which is a local quantity since 2D stacks are essentially heterogeneous. Optical interferential techniques based on contrast‐enhancing surfaces may be sensitive enough to visualize m variations but the experimental determination of m requires heavy and unstable comparisons with multiparameter numerical models. Focusing on the recent backside absorbing layer microscopy, the most sensitive to date among interferential techniques, a self‐calibrating method is demonstrated allowing instantaneous monolayer counting all over the sample surface which does not require the knowledge of the instrumental parameters, the sample or ambient refractive indices or the detailed structure of the contrast‐enhancing layer. This method is introduced step by step using examples of hexagonal boron nitride (hBN) stacks with increasing complexity. Exact monolayer counting up to 36 hBN monolayers is obtained using basic image analysis.
二维(2D)材料堆叠的性质严重依赖于堆叠中的单层数(m)。因此,量化这个数字是很重要的,这是一个局部数量,因为二维堆栈本质上是异质的。基于对比度增强表面的光学干涉技术可能足够敏感,可以可视化m的变化,但m的实验测定需要与多参数数值模型进行大量且不稳定的比较。聚焦于最近的背面吸收层显微镜,这是迄今为止干涉技术中最敏感的,展示了一种自校准方法,允许在整个样品表面瞬时进行单层计数,而不需要了解仪器参数、样品或环境折射率或对比度增强层的详细结构。以六方氮化硼(hBN)堆叠为例,逐步介绍了该方法。使用基本图像分析获得了精确的单层计数,最多可达36个hBN单层。
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引用次数: 0
Crystal Structure, Electronic Structure, the Density of States, Optical Properties, and Superconducting Transition Temperature of ZrBeSi Crystal under Pressure 压力下ZrBeSi晶体的晶体结构、电子结构、态密度、光学性质和超导转变温度
Pub Date : 2023-06-27 DOI: 10.1002/pssb.202300196
Yu-Huan Li
Through a rigorous application of first‐principles simulations, it is endeavored to provide a systematic examination of how the crystal structure, electronic structure, density of states, optical properties, and superconducting transition temperature of ZrBeSi are influenced by variations in pressure. The research has shown that pressure can alter the electronic structure and density of states, with a tendency for expansion toward higher energy regions as pressure increases. By manipulating the pressure, both the absorption coefficient and energy loss are sensitive to pressure and exhibit sharp absorption and loss peaks in the UV wavelength region. In addition to the above, the effects of electron–phonon coupling are taken into account and further investigations of the superconducting transition temperature Tc$T_{c}$ , which is found to be 0.564 K at 0 GPa, are subsequently delved into. Additionally, there exists a quadratic attenuation relationship between the temperature and pressure. Further studies reveal that the decrease of Tc$T_{text{c}}$ with increasing pressure is a result of the combined effects of the gradual increase in the phonon density of states’ frequency and the flattening of the density of states near the Fermi level. The findings of this study contribute to the understanding of the impact of pressure on the physical properties of materials.
通过对第一性原理模拟的严格应用,本文试图对压力变化对ZrBeSi的晶体结构、电子结构、态密度、光学性质和超导转变温度的影响进行系统的研究。研究表明,压力可以改变电子结构和状态密度,随着压力的增加,电子结构和状态密度有向高能区扩展的趋势。通过调节压力,吸收系数和能量损失对压力都很敏感,并且在紫外波长区域表现出明显的吸收和损失峰。除此之外,还考虑了电子-声子耦合的影响,并进一步研究了超导转变温度Tc$T_{c}$,该温度在0 GPa时为0.564 K。此外,温度与压力之间存在二次衰减关系。进一步的研究表明,Tc$T_{text{c}}$随压力的增加而减小是态频率声子密度逐渐增加和费米能级附近态密度趋于平坦的综合作用的结果。本研究结果有助于理解压力对材料物理性能的影响。
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引用次数: 0
Enhancement of Multiferroic and Optical Properties in BiFeO3 Due to Different Exchange Interactions Between Transition and Rare Earth Ions 稀土离子与跃迁离子的交换作用增强了BiFeO3的多铁性和光学性质
Pub Date : 2023-06-27 DOI: 10.1002/pssb.202300026
S. Kumari, K. Anand, Mohd Alam, L. Ghosh, Srishti Dixit, Rahul K Singh, A. Jain, S. Yusuf, Chetna Gautam, Anup K. Ghosh, A. Mohan, S. Chatterjee
An experimental analysis of the Bi0.90Tb0.1Fe0.90Mn0.1O3 system synthesized via the solid‐state method is presented in this report. UV–visible measurements are carried out and a smaller bandgap (i.e., semiconductor‐type behavior) is obtained. The structural phase of the present system is analyzed with X‐ray diffraction and neutron diffraction measurement. Structural‐phase analysis reveals that the system contains two nuclear phases (rhombohedral structure [R3c space group] with orthorhombic [Pn21a space group]). Moreover, also more bending in the bond angle is found, and the existence of a magnetic phase with a nuclear phase for the Bi0.90Tb0.1Fe0.90Mn0.1O3 system is also confirmed by neutron diffraction. The magnetic moment versus temperature (M–T) curve demonstrates that the system's Néel transition temperature is at 568 K. The magnetization data show enhancement in the magnetic property by displaying the weak ferromagnetic‐type behavior at room temperature in the magnetic field versus magnetic moment (M–H) curve as compared to the parent compound. From dielectric measurement, the dielectric constant increases while the loss decreases.
本文对采用固相法合成的Bi0.90Tb0.1Fe0.90Mn0.1O3体系进行了实验分析。进行了紫外可见测量,获得了更小的带隙(即半导体型行为)。用X射线衍射和中子衍射测量分析了该体系的结构相。结构-相分析表明,该体系包含两种核相(菱形结构[R3c空间群]和正交结构[Pn21a空间群])。此外,还发现键角有较大的弯曲,并通过中子衍射证实了Bi0.90Tb0.1Fe0.90Mn0.1O3体系存在带核相的磁相。磁矩-温度(M-T)曲线表明,该体系的nsamel转变温度为568 K。磁化数据显示,与母体化合物相比,在室温下磁场与磁矩(M-H)曲线中表现出弱铁磁型行为,磁性能得到增强。从介电测量来看,介电常数增大,损耗减小。
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引用次数: 0
Effect of Twin Spacing and Loading Mode on Mechanical Properties and Deformation Mechanism of NiCoAl Columnar Polycrystalline Alloy 孪晶间距和加载方式对NiCoAl柱状多晶合金力学性能及变形机理的影响
Pub Date : 2023-06-23 DOI: 10.1002/pssb.202300166
Wei Zhang, Xuefeng Lu, Ping Yang, Xu Yang, Junqiang Ren, H. Xue, Yutian Ding, Xin Guo
Grain boundary engineering is an effective and feasible metal strengthening strategy to enhance the properties of nanopolycrystalline alloys by changing the number, configuration, and connectivity of different types of grain boundaries, especially for the twin boundaries. In the present contribution, the effect of twin spacing and loading mode on the deformation behavior and mechanism of NiCoAl columnar polycrystalline alloy is investigated. The results show that the nanotwins can not only increase the bearing capacity of dislocations but also emit many dislocations, resulting in the coupling effect of dislocation strengthening and twin strengthening. When the twin spacing is large, intrinsic stacking faults occur and gradually transform into deformation twins. In this stage, Shockley partial dislocation controls plastic deformation. When the twin spacing is small, the high‐density twin layers and stacking faults are more likely to interweave, showing a combination action of Shockley partial dislocation and stair‐rod dislocation. With the loading changing to Z axis, the yield strength decreases due to reduced resistance to the dislocation and a weakened number of Shockley partial dislocations of the emission, leading to less strengthening of the twins. The insights provide a solid theoretical foundation for the further application of NiCoAl in industrial production.
晶界工程是一种有效可行的金属强化策略,通过改变不同类型晶界,特别是孪晶界的数量、形态和连通性来提高纳米多晶合金的性能。本文研究了孪晶间距和加载方式对NiCoAl柱状多晶合金变形行为和变形机理的影响。结果表明:纳米孪晶不仅能提高位错的承载能力,而且能产生多种位错,形成位错强化与孪晶强化的耦合效应;当孪晶间距较大时,发生本禀叠错,并逐渐转变为变形孪晶。在此阶段,肖克利部分位错控制塑性变形。当孪晶间距较小时,高密度孪晶层和层错更容易交织,表现为肖克利部分位错和阶梯杆位错的共同作用。随着载荷向Z轴方向转变,由于对位错的抵抗力降低,发射体的Shockley部分位错数量减少,屈服强度降低,导致孪晶强化减弱。这些见解为NiCoAl在工业生产中的进一步应用提供了坚实的理论基础。
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引用次数: 0
Unconventional Nonequilibrium Phase Stabilization in FeNi Alloy Examined by Positron Annihilation Spectroscopy 用正电子湮没光谱研究FeNi合金的非常规非平衡相稳定
Pub Date : 2023-06-23 DOI: 10.1002/pssb.202300182
LeBert Sam Billgates, G. A. Jacob, S. Sellaiyan, Raphel Justin Joseyphus
The equilibrium FeNi alloy prefers face centered cubic (fcc) phase whereas the formation of metastable phases through certain low‐temperature synthesis methods is obscure. FeNi alloy exhibiting nonequilibrium body centered cubic (bcc) structure beyond 5 at% Ni is obtained through chemical reduction at 453 K with noticeable lattice shrinkage. Positron lifetime analysis and Doppler broadening spectroscopy are employed to probe the correlation between defects and phase stability. The mean lifetime of the chemically synthesized alloys is larger than 300 ps, implying an average of 7‐vacancy cluster. The modified two‐state trapping model reveals defect concentration in the range of 1022 m−3$left(10right)^{22} left(text{ m}right)^{- 3}$ , on par with irradiated alloys. Significant deviation in the high‐momentum component between the bulk and chemically synthesized samples is correlated to the changes in 3d electrons. The Fe and FeNi alloy uncover significant contraction in d‐band of Fe which facilitates bcc phase stabilization above 5 at% Ni through cluster vacancy formation.
平衡FeNi合金倾向于面心立方相(fcc),而通过某些低温合成方法形成亚稳相尚不清楚。在453 K温度下化学还原得到的FeNi合金,在% Ni浓度大于5时呈现非平衡体心立方(bcc)结构,晶格收缩明显。采用正电子寿命分析和多普勒展宽光谱法研究了缺陷与相稳定性的关系。化学合成合金的平均寿命大于300 ps,意味着平均有7个空位簇。修正的双态俘获模型显示,缺陷浓度在1022 m−3$left(10right)^{22} left(text{m}right)^{- 3}$范围内,与辐照合金相当。体和化学合成样品之间高动量分量的显著偏差与三维电子的变化有关。Fe和FeNi合金在Fe的d波段显示出明显的收缩,这使得bcc相在% Ni时通过簇空位形成稳定在5以上。
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引用次数: 0
Surface Structure and Temperature‐Reversible Phase Transition of Sn on W(110) Surface W(110)表面Sn的表面结构和温度可逆相变
Pub Date : 2023-06-23 DOI: 10.1002/pssb.202300070
Dhiman Banik, T. Nakagawa
The growth of Sn overlayers on the W(110) surface is investigated using low‐energy electron diffraction analysis. The structural investigation reveals Sn adsorption sites on the W(110) for (1 × 3) and (1 × 4) structures. During the formation of the (1 × 3) structure, Sn atoms are only adsorbed on the threefold hollow sites. However, at higher coverages, Sn atoms are adsorbed on the fourfold hollow sites after the threefold hollow sites are filled up to form the (1 × 4) structure, resulting in a dense overlayer structure. Both structures are overlayer with no alloy formation at the interface. The (1 × 3) phase exhibits a temperature‐reversible phase transition below ≈270 K. At low temperatures, a phase with long‐range order is developed.
利用低能电子衍射分析研究了W(110)表面Sn覆盖层的生长。在W(110)上发现了(1 × 3)和(1 × 4)结构的Sn吸附位点。在(1 × 3)结构形成过程中,锡原子仅吸附在三层中空位点上。然而,在较高的覆盖率下,Sn原子被填满后会吸附在四重空心位点上,形成(1 × 4)结构,形成致密的覆盖层结构。两种结构均为上覆结构,界面处未形成合金。(1 × 3)相在≈270 K以下表现出温度可逆的相变。在低温下,形成了具有长程阶次的相。
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引用次数: 0
Electric Field‐Induced Phase Transition on HPX6 (X = C, Si, Ge, Sn) Monolayers HPX6 (X = C, Si, Ge, Sn)单分子膜的电场诱导相变
Pub Date : 2023-06-23 DOI: 10.1002/pssb.202300112
Krishnanshu Basak, S. Nath, Rajkumar Mondal, D. Jana
Herein, the electronic, thermoelectric, and optical properties of semimetallic HPX6 (X = C, Si, Ge, Sn) monolayers are systematically studied under the influence of external electric field in the framework of density functional theory. A band tuning has been achieved in these structures by the application of an external electric field of appropriate strength. It is predicted that Dirac cone splitting is nearly proportional to the external electric field strength. The modulation of electric properties induced by external field can alter the position of chemical potential in the band diagram and brings significant improvement in thermoelectric responses. The application of an external electric field significantly modulates the optical properties. The electric field‐induced HPX6 system provides better thermoelectric and optical response for nanodevice applications.
本文在密度泛函理论的框架下,系统地研究了外电场作用下半金属HPX6 (X = C, Si, Ge, Sn)单层的电子、热电和光学性质。通过施加适当强度的外电场,在这些结构中实现了带调谐。预测了狄拉克锥分裂与外加电场强度成正比关系。外场诱导的电性能调制可以改变化学势在能带图中的位置,显著改善热电响应。外加电场的作用显著地调节了光学性质。电场感应HPX6系统为纳米器件应用提供了更好的热电和光学响应。
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引用次数: 0
Electronic, Magnetic, and Elastic Features of Quaternary Heusler Alloys: FeVScSb and FeVYSb 第四系Heusler合金的电子、磁性和弹性特性:FeVScSb和FeVYSb
Pub Date : 2023-06-23 DOI: 10.1002/pssb.202300178
I. Bensehil, H. Baaziz, T. Ghellab, Z. Charifi, Ahlem Kolli, N. Guechi
This study employs density functional theory to investigate the structural, elastic, electronic, and magnetic properties of FeVScSb and FeVYSb Heusler compounds. FeVScSb exhibits ferromagnetic properties in its stable state, whereas FeVYSb displays ferrimagnetic behavior. The obtained elastic constants (Cij) indicate that FeVScSb and FeVYSb possess mechanical stability and ductility, while also displaying a significant degree of elastic anisotropy. The aggregate magnetic moment of said alloys is determined to be equivalent to 3 μB, in accordance with the Slater–Pauling principle. The investigation of the impact of uniform strain on electronic and magnetic characteristics is conducted. The findings indicate that FeVScSb and FeVYSb exhibit semiconductivity within extensive lattice parameter intervals, ranging from 5.84 to 6.60 Å for FeVScSb and from 6.11 to 6.70 Å for FeVYSb. The Heusler compounds FeVScSb and FeVYSb exhibit half‐metallic behavior within a range of lattice parameters. Specifically, FeVScSb displays this behavior when the lattice parameter varies from 6.61 to 6.72 Å, while FeVYSb exhibits half‐metallicity within the range of 6.71–6.81 Å. Under the influence of strain, the magnetic moment retains a constant value of 3 μB. Therefore, the potential for spintronics is promising.
本研究采用密度泛函理论研究了FeVScSb和FeVYSb Heusler化合物的结构、弹性、电子和磁性能。FeVScSb在稳定状态下表现为铁磁性,而FeVYSb则表现为铁磁性。得到的弹性常数(Cij)表明,FeVScSb和FeVYSb具有力学稳定性和延性,同时也表现出明显的弹性各向异性。根据sllater - pauling原理,确定合金的聚集磁矩等于3 μB。研究了均匀应变对电磁特性的影响。结果表明,FeVScSb和FeVYSb在广泛的晶格参数区间内表现出半导体性,FeVScSb在5.84 ~ 6.60 Å范围内,FeVYSb在6.11 ~ 6.70 Å范围内。Heusler化合物FeVScSb和FeVYSb在一定晶格参数范围内表现出半金属行为。具体来说,FeVScSb在晶格参数6.61 ~ 6.72 Å范围内表现出半金属丰度,而FeVYSb在6.71 ~ 6.81 Å范围内表现出半金属丰度。在应变作用下,磁矩保持恒定值为3 μB。因此,自旋电子学的潜力是有希望的。
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引用次数: 0
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