To enhance the load‐bearing capacity and energy absorption capacity of the honeycomb, three kinds of star‐rhombus honeycombs (SRHs) are proposed by adding rhombic parts to the traditional star‐shaped honeycomb (TSH). The quasi‐static crushing responses of SRHs, including deformation mechanism, crushing stress, specific energy absorption (SEA), and Poisson's ratio, are studied based on the finite‐element (FE) method. The introduction of rhombic parts increases the number of plastic hinges, resulting in significantly higher crushing stress and SEA of the SRHs than that of the TSH. Among the SRHs, SRH‐A has the largest energy absorption, and the SEA value of SRH‐A is 98.2% higher than TSH. Then, parametric studies including wall thickness, cell wall angle, and spacing length between the vertices of the star‐shaped part and the rhombic part are carried out. The wall thickness and cell wall angle have the greatest influence on the crushing response of SRHs. Crushing stress and Poisson's ratio of SRHs can be adjusted by changing the wall thickness of the rhombic part. The configurations and geometric parameters of the rhombic part determine the Poisson's ratio of SRHs. This study provides effective guidance for designing star‐shaped honeycombs with enhanced load‐bearing capacity and energy absorption capacity.
{"title":"Enhancement Design and Quasi‐Static Crushing Response of Novel Star‐Rhombus Honeycombs","authors":"Shun Wang, Hai Liu","doi":"10.1002/pssb.202300231","DOIUrl":"https://doi.org/10.1002/pssb.202300231","url":null,"abstract":"To enhance the load‐bearing capacity and energy absorption capacity of the honeycomb, three kinds of star‐rhombus honeycombs (SRHs) are proposed by adding rhombic parts to the traditional star‐shaped honeycomb (TSH). The quasi‐static crushing responses of SRHs, including deformation mechanism, crushing stress, specific energy absorption (SEA), and Poisson's ratio, are studied based on the finite‐element (FE) method. The introduction of rhombic parts increases the number of plastic hinges, resulting in significantly higher crushing stress and SEA of the SRHs than that of the TSH. Among the SRHs, SRH‐A has the largest energy absorption, and the SEA value of SRH‐A is 98.2% higher than TSH. Then, parametric studies including wall thickness, cell wall angle, and spacing length between the vertices of the star‐shaped part and the rhombic part are carried out. The wall thickness and cell wall angle have the greatest influence on the crushing response of SRHs. Crushing stress and Poisson's ratio of SRHs can be adjusted by changing the wall thickness of the rhombic part. The configurations and geometric parameters of the rhombic part determine the Poisson's ratio of SRHs. This study provides effective guidance for designing star‐shaped honeycombs with enhanced load‐bearing capacity and energy absorption capacity.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87808991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The present study investigates the influence of layer thickness and stacking engineering on the electronic, structural, and optical properties of monolayer PtS2 using the density functional theory calculations. The monolayer PtS2 (m‐PtS2) is found to possess an indirect bandgap, 1.73 eV, which reduces to 0.67 eV for bilayer PtS2 (b‐PtS2). Impact of stacking engineering on the electronic and optical properties is explored through six different stacking patterns and the AA1 configuration is found to be most stable displaying the highest reflectance and refractive index values. Moreover, this PtS2 bilayer structure demonstrates promising light absorption capability over a wide range (2–12 eV) with the position of absorption edge showing a redshift as the layers number increases. These computed electronic and optical properties of monolayer PtS2 validate it as a prospective material for future optoelectronic devices.
{"title":"Tuning of Electronic and Optical Properties of PtS2 Monolayer Using Stacking Engineering","authors":"Priyanka Priyanka, Ramesh Kumar, F. Chand","doi":"10.1002/pssb.202300132","DOIUrl":"https://doi.org/10.1002/pssb.202300132","url":null,"abstract":"The present study investigates the influence of layer thickness and stacking engineering on the electronic, structural, and optical properties of monolayer PtS2 using the density functional theory calculations. The monolayer PtS2 (m‐PtS2) is found to possess an indirect bandgap, 1.73 eV, which reduces to 0.67 eV for bilayer PtS2 (b‐PtS2). Impact of stacking engineering on the electronic and optical properties is explored through six different stacking patterns and the AA1 configuration is found to be most stable displaying the highest reflectance and refractive index values. Moreover, this PtS2 bilayer structure demonstrates promising light absorption capability over a wide range (2–12 eV) with the position of absorption edge showing a redshift as the layers number increases. These computed electronic and optical properties of monolayer PtS2 validate it as a prospective material for future optoelectronic devices.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85926301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yao Yang, Yibin Hu, Yan Huang, Xiaofang Wang, Xiaoshuang Chen
Cu‐doped TiO2$left(text{TiO}right)_{2}$ is a dilute magnetic semiconductor with excellent electrical, magnetic, and optical properties. Herein, first‐principles methods are employed to investigate its electronic structure, magnetic properties, and optical behavior. The results demonstrate that Cu‐doped TiO2$left(text{TiO}right)_{2}$ exhibits intrinsic ferromagnetism. The presence of O vacancies facilitates the ferromagnetic exchange between Cu ions by forming bound magnetic polarons (BMPs). This finding validates the BMPs model and explains for the decrease in magnetic properties during annealing under O2 conditions. As the concentration of Cu increases, the system undergoes a transition from a semiconductor to a metal. Cu ions exhibit a preference for a compact configuration and display either paramagnetism or antiferromagnetism. The spin polarization can be effectively controlled from 0% to 100% by adjusting the concentration and site of Cu. Additionally, Cu doping leads to a reduction in the bandgap and an extension of the absorption range into the infrared region. The absorption intensity is positively correlated with the concentration. The presence of a spin‐polarized intermediate band indicates a correlation between the spin of the excited electron and the energy of the absorbed photon. Overall, Cu‐doped TiO2$left(text{TiO}right)_{2}$ shows significant potential for applications in spintronics and spin‐related optics, including photospintronics and spin photocatalysis.
{"title":"The Role of Concentration, Site, and O Vacancy on Magnetic and Optical Properties of Cu‐Doped Anatase TiO2","authors":"Yao Yang, Yibin Hu, Yan Huang, Xiaofang Wang, Xiaoshuang Chen","doi":"10.1002/pssb.202300157","DOIUrl":"https://doi.org/10.1002/pssb.202300157","url":null,"abstract":"Cu‐doped TiO2$left(text{TiO}right)_{2}$ is a dilute magnetic semiconductor with excellent electrical, magnetic, and optical properties. Herein, first‐principles methods are employed to investigate its electronic structure, magnetic properties, and optical behavior. The results demonstrate that Cu‐doped TiO2$left(text{TiO}right)_{2}$ exhibits intrinsic ferromagnetism. The presence of O vacancies facilitates the ferromagnetic exchange between Cu ions by forming bound magnetic polarons (BMPs). This finding validates the BMPs model and explains for the decrease in magnetic properties during annealing under O2 conditions. As the concentration of Cu increases, the system undergoes a transition from a semiconductor to a metal. Cu ions exhibit a preference for a compact configuration and display either paramagnetism or antiferromagnetism. The spin polarization can be effectively controlled from 0% to 100% by adjusting the concentration and site of Cu. Additionally, Cu doping leads to a reduction in the bandgap and an extension of the absorption range into the infrared region. The absorption intensity is positively correlated with the concentration. The presence of a spin‐polarized intermediate band indicates a correlation between the spin of the excited electron and the energy of the absorbed photon. Overall, Cu‐doped TiO2$left(text{TiO}right)_{2}$ shows significant potential for applications in spintronics and spin‐related optics, including photospintronics and spin photocatalysis.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90569265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A series of Gd7O6(BO3)(PO4)2:xDy3+ phosphors are synthesized using high‐temperature solid‐phase method. The phase and spectral characteristics of phosphors are analyzed using X‐ray diffraction and spectrometer. It is found that the ratio of the light intensity corresponding to the electric dipole and magnetic dipole can regulate the color of the photoluminescence, and the optimal concentration x = 0.05 reaches 1.0834, which is very close to white light. This phenomenon is related to the symmetry of the lattice. Simultaneously, it is observed that the fluorescence decay lifetime decreases with increasing concentration. The Commission Internationale de l'Eclairage coordinates obtained from the measured color of the sample are also very close to the standard white light coordinates (0.3333, 0.3333). The results presented above suggest that Gd7O6(BO3)(PO4)2:xDy3+ is a promising candidate for the next generation of white light‐emitting diodes.
{"title":"A Novel Single‐Phase White Phosphor Gd7O6(BO3)(PO4)2:Dy3+","authors":"Rongli Zhao, Xiang Guo, Yi Ling, Ruirui Cui","doi":"10.1002/pssb.202300193","DOIUrl":"https://doi.org/10.1002/pssb.202300193","url":null,"abstract":"A series of Gd7O6(BO3)(PO4)2:xDy3+ phosphors are synthesized using high‐temperature solid‐phase method. The phase and spectral characteristics of phosphors are analyzed using X‐ray diffraction and spectrometer. It is found that the ratio of the light intensity corresponding to the electric dipole and magnetic dipole can regulate the color of the photoluminescence, and the optimal concentration x = 0.05 reaches 1.0834, which is very close to white light. This phenomenon is related to the symmetry of the lattice. Simultaneously, it is observed that the fluorescence decay lifetime decreases with increasing concentration. The Commission Internationale de l'Eclairage coordinates obtained from the measured color of the sample are also very close to the standard white light coordinates (0.3333, 0.3333). The results presented above suggest that Gd7O6(BO3)(PO4)2:xDy3+ is a promising candidate for the next generation of white light‐emitting diodes.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88143654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chun Li, Yan Teng, Hao-Chung Chen, R. Su, Hancong Sun, Ling Jiang
Herein, a tunable superconducting switch that can modulate terahertz waves is designed and experimentally demonstrated. The switchable device consists of two symmetrical split ring resonator antistructures made from niobium nitride film in one unit cell. The relatively high modulation depths of 88.5% can be obtained at resonance peaks of 0.328 THz by applying a very low bias voltage of 0.8 V. Due to the presence of higher‐order resonance modes, the superconducting device also demonstrates a multiband tuning ability at 1.03 and 1.16 THz. To further analyze the modulation mechanism of the superconducting device, the temperature dependence of the switchable device is also measured. The trends of conductivity change are calculated based on the Bardeen–Cooper–Schrieffer theory and the simulations agree well with the experimental results. During the experiment, this device not only owns a good switching capability but also shows significant frequency selective bandpass characteristics. This study delivers a promising approach for designing active and miniaturized devices, especially for applications in THz cryogenic systems.
{"title":"Superconducting Complementary Metamaterial‐Based Switchable Device for Terahertz Wave Manipulation","authors":"Chun Li, Yan Teng, Hao-Chung Chen, R. Su, Hancong Sun, Ling Jiang","doi":"10.1002/pssb.202300203","DOIUrl":"https://doi.org/10.1002/pssb.202300203","url":null,"abstract":"Herein, a tunable superconducting switch that can modulate terahertz waves is designed and experimentally demonstrated. The switchable device consists of two symmetrical split ring resonator antistructures made from niobium nitride film in one unit cell. The relatively high modulation depths of 88.5% can be obtained at resonance peaks of 0.328 THz by applying a very low bias voltage of 0.8 V. Due to the presence of higher‐order resonance modes, the superconducting device also demonstrates a multiband tuning ability at 1.03 and 1.16 THz. To further analyze the modulation mechanism of the superconducting device, the temperature dependence of the switchable device is also measured. The trends of conductivity change are calculated based on the Bardeen–Cooper–Schrieffer theory and the simulations agree well with the experimental results. During the experiment, this device not only owns a good switching capability but also shows significant frequency selective bandpass characteristics. This study delivers a promising approach for designing active and miniaturized devices, especially for applications in THz cryogenic systems.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88976319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The in‐plane crushing behaviors of hierarchical hexagonal honeycombs, structured by replacing every three‐wall vertex of both the conventional and reentrant hexagonal honeycombs with a small hollow‐circle, are investigated herein. The finite element (FE) models are first verified by an empirical formula from the literature and then further used to simulate the in‐plane crushing behaviors of the honeycombs under different compressive velocities. The deformation mode, plateau stress, and specific energy absorption (SEA) are studied based on the FE simulations. With respect to the conventional hierarchical honeycombs, the reentrant hierarchical honeycombs, in most instances, are found to exhibit higher plateau stress but lower SEA. It is remarkable that the hierarchical hexagonal honeycombs exhibit higher plateau stress and SEA than the basic hexagonal ones, which indicates that the hierarchical design is effective in improving both the impact resistance and energy absorption capabilities of the honeycombs.
{"title":"In‐Plane Crushing Behaviors of Hexagonal Honeycombs with Hollow‐Circle Joint under Different Compressive Velocities","authors":"Y. Chen, Wenjun Zhao, Peijun Gao","doi":"10.1002/pssb.202300127","DOIUrl":"https://doi.org/10.1002/pssb.202300127","url":null,"abstract":"The in‐plane crushing behaviors of hierarchical hexagonal honeycombs, structured by replacing every three‐wall vertex of both the conventional and reentrant hexagonal honeycombs with a small hollow‐circle, are investigated herein. The finite element (FE) models are first verified by an empirical formula from the literature and then further used to simulate the in‐plane crushing behaviors of the honeycombs under different compressive velocities. The deformation mode, plateau stress, and specific energy absorption (SEA) are studied based on the FE simulations. With respect to the conventional hierarchical honeycombs, the reentrant hierarchical honeycombs, in most instances, are found to exhibit higher plateau stress but lower SEA. It is remarkable that the hierarchical hexagonal honeycombs exhibit higher plateau stress and SEA than the basic hexagonal ones, which indicates that the hierarchical design is effective in improving both the impact resistance and energy absorption capabilities of the honeycombs.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76144419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electronic structure and optical spectra of halide perovskites A2BCl6 (A= Cs; B= Se, Sn, Te, Ti, Zr) and (A=K; B= Pd, Pt, Sn) for photovoltaic and optoelectronic applications","authors":"Saadi Berri, N. Bouarissa","doi":"10.1002/pssb.202300280","DOIUrl":"https://doi.org/10.1002/pssb.202300280","url":null,"abstract":"","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84177169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A method for modulating transverse magnetic intrinsic graphene plasmons by temperature is proposed. In contrast to existing 2D or 3D infinite graphene structures, an intrinsic graphene 3D finite structure with periodicity in all three directions is designed. At the matching point, where the dispersion curve of the intrinsic graphene plasmons intersects with that of electromagnetic radiation, the intrinsic graphene plasmons and electromagnetic radiation can be excited by each other; in other words, the plasmon can be excited by light without additional mechanisms. Furthermore, the influence of environment temperature on the matching point is shown. The study reveals that the plasmon modulation is adaptive to the temperature. These results are beneficial for the design of compact graphene‐based optoelectronic devices.
{"title":"Temperature‐Adaptive Modulation of Transverse Magnetic Intrinsic Graphene Plasmons","authors":"Dong Sun, X. Hua, Lijun Wang, Daqing Liu, N. Ma","doi":"10.1002/pssb.202300256","DOIUrl":"https://doi.org/10.1002/pssb.202300256","url":null,"abstract":"A method for modulating transverse magnetic intrinsic graphene plasmons by temperature is proposed. In contrast to existing 2D or 3D infinite graphene structures, an intrinsic graphene 3D finite structure with periodicity in all three directions is designed. At the matching point, where the dispersion curve of the intrinsic graphene plasmons intersects with that of electromagnetic radiation, the intrinsic graphene plasmons and electromagnetic radiation can be excited by each other; in other words, the plasmon can be excited by light without additional mechanisms. Furthermore, the influence of environment temperature on the matching point is shown. The study reveals that the plasmon modulation is adaptive to the temperature. These results are beneficial for the design of compact graphene‐based optoelectronic devices.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91539841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Katharina Peh, Aaron Flötotto, K. Lauer, D. Schulze, Dominik Bratek, S. Krischok
Low‐temperature photoluminescence spectroscopy enables the determination of the dopant concentration of shallow impurities in silicon. This measurement method is therefore well suited for identifying and analyzing dopants (intentional impurities in silicon). A method is presented which allows the determination of the boron concentration in silicon in a range from 2.2⋅1012$2.2 cdot left(10right)^{12}$ to 2.2⋅1016 cm−3$2.2 cdot left(10right)^{16} left(text{cm}right)^{- 3}$ at temperatures from 4.2 to 20 K with increased temperature accuracy. This method requires only one calibration function for the photoluminescence intensity ratio of the boron‐bound exciton IBTO(BE)$I_{left(text{B}right)_{text{TO}} left(right. text{BE} left.right)}$ and the free exciton IITO(FE)$I_{I_{text{TO}} left(right. text{FE} left.right)}$ . The measurement temperature is obtained from the intrinsic silicon photoluminescence line of free excitons ( ITO(FE)$I_{text{TO}} left(right. text{FE} left.right) left.right)$ ) using a fitting method, which distinguishes the TO $text{TO }$ and LO$text{LO}$ components of the free exciton peak. The determined calibration function is IBTO(BE)/IITO(FE)=(5.8±0.1)⋅10−18 cm3⋅cboron⋅e(56.7±0.7)KT$left(I_{B_{text{TO}} left(right. text{BE} left.right)}right)/left(I_{I_{text{TO}} left(right. text{FE} left.right)}right) = left(right. 5.8 pm 0.1 left.right) cdot left(10right)^{- 18} left(text{cm}right)^{3} cdot c_{text{boron}} cdot left(text{e}right)^{frac{left(right. 56.7 pm 0.7 left.right) text{K}}{T}}$ . The obtained exciton binding energy to boron, Eb=4.9±0.1 meV$E_{text{b}} = 4.9 pm 0.1 text{meV}$ , agrees well with literature data.
{"title":"Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision","authors":"Katharina Peh, Aaron Flötotto, K. Lauer, D. Schulze, Dominik Bratek, S. Krischok","doi":"10.1002/pssb.202300300","DOIUrl":"https://doi.org/10.1002/pssb.202300300","url":null,"abstract":"Low‐temperature photoluminescence spectroscopy enables the determination of the dopant concentration of shallow impurities in silicon. This measurement method is therefore well suited for identifying and analyzing dopants (intentional impurities in silicon). A method is presented which allows the determination of the boron concentration in silicon in a range from 2.2⋅1012$2.2 cdot left(10right)^{12}$ to 2.2⋅1016 cm−3$2.2 cdot left(10right)^{16} left(text{cm}right)^{- 3}$ at temperatures from 4.2 to 20 K with increased temperature accuracy. This method requires only one calibration function for the photoluminescence intensity ratio of the boron‐bound exciton IBTO(BE)$I_{left(text{B}right)_{text{TO}} left(right. text{BE} left.right)}$ and the free exciton IITO(FE)$I_{I_{text{TO}} left(right. text{FE} left.right)}$ . The measurement temperature is obtained from the intrinsic silicon photoluminescence line of free excitons ( ITO(FE)$I_{text{TO}} left(right. text{FE} left.right) left.right)$ ) using a fitting method, which distinguishes the TO $text{TO }$ and LO$text{LO}$ components of the free exciton peak. The determined calibration function is IBTO(BE)/IITO(FE)=(5.8±0.1)⋅10−18 cm3⋅cboron⋅e(56.7±0.7)KT$left(I_{B_{text{TO}} left(right. text{BE} left.right)}right)/left(I_{I_{text{TO}} left(right. text{FE} left.right)}right) = left(right. 5.8 pm 0.1 left.right) cdot left(10right)^{- 18} left(text{cm}right)^{3} cdot c_{text{boron}} cdot left(text{e}right)^{frac{left(right. 56.7 pm 0.7 left.right) text{K}}{T}}$ . The obtained exciton binding energy to boron, Eb=4.9±0.1 meV$E_{text{b}} = 4.9 pm 0.1 text{meV}$ , agrees well with literature data.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77479139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. M. Jalal, H. Saadi, A. Hasnaoui, Ouafa Hachem, A. Lafhal, M. Madani, M. El Bouziani
The effect of single‐ion anisotropy is investigated on a mixed‐spin (1, 3/2) square Ising nanowire with square ferromagnetic shell and negative core–shell exchange coupling using Monte Carlo simulation. Depending on the Hamiltonian parameters, three different topologies of the phase diagram in the (anisotropy, temperature) plane are found. The tricritical point appears for D/JC$D / J_{text{C}}$ and DC/JC$D_{text{C}} / J_{text{C}}$ effects. For influence of DS/JC$D_{text{S}} / J_{text{C}}$ , there is no tricritical point in the phase diagram. The first‐order lines and critical endpoints are also obtained. Some important phenomena such as compensation behavior and rich variety of hysteresis loops are found. The results can be compared with other works, in particular on the nanowire with core–shell structure.
{"title":"Single‐Ion Anisotropy Effect on the Critical and Hysteresis Behaviors of a Mixed‐Spin (1, 3/2) Square Ising Nanowire","authors":"E. M. Jalal, H. Saadi, A. Hasnaoui, Ouafa Hachem, A. Lafhal, M. Madani, M. El Bouziani","doi":"10.1002/pssb.202300180","DOIUrl":"https://doi.org/10.1002/pssb.202300180","url":null,"abstract":"The effect of single‐ion anisotropy is investigated on a mixed‐spin (1, 3/2) square Ising nanowire with square ferromagnetic shell and negative core–shell exchange coupling using Monte Carlo simulation. Depending on the Hamiltonian parameters, three different topologies of the phase diagram in the (anisotropy, temperature) plane are found. The tricritical point appears for D/JC$D / J_{text{C}}$ and DC/JC$D_{text{C}} / J_{text{C}}$ effects. For influence of DS/JC$D_{text{S}} / J_{text{C}}$ , there is no tricritical point in the phase diagram. The first‐order lines and critical endpoints are also obtained. Some important phenomena such as compensation behavior and rich variety of hysteresis loops are found. The results can be compared with other works, in particular on the nanowire with core–shell structure.","PeriodicalId":20107,"journal":{"name":"physica status solidi (b)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84174579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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