This investigation centers on exploring the plastic deformation removal mechanism and dislocation dynamics in the nano‐grinding of single crystal silicon carbide featuring a randomly rough surface. To simulate this, a novel approach combining the Weierstrass‐Mandelbrot fractal surface function with molecular dynamics is employed. Generate randomly rough surface contours using the Weierstrass‐Mandelbrot fractal surface function. By adjusting the fractal dimension, an ideal representation of single crystal silicon carbide with randomly rough surfaces is obtained. By combining plastic deformation detection methods, the process of workpiece sliding, plowing, and chip removal is thoroughly studied, and the plastic deformation removal mechanism of random rough surface grinding is explored; Combining post‐processing methods such as sheer strain and dislocation trajectory, analyze the morphological changes and transformation mechanisms of dislocations. Notably, at a grinding depth of 33.18nm, the activation of slip systems induces dislocation formation, enabling plastic deformation. Furthermore, at depths exceeding 144.00nm, the emergence of stacking faults on the random rough surface is observed. Throughout the grinding procedure, plastic deformation of debris occurs, leading to the formation of plastic bulges on both sides of the tool, the debris generated during processing does not significantly impact the defects encountered during secondary grinding of the rough surface.This article is protected by copyright. All rights reserved.
{"title":"Study on plastic deformation removal mechanism and dislocation change in nano‐grinding of single crystal silicon carbide with random rough surface","authors":"Dongling Yu, Haican Shen, Jinyu Chen, Jiao Li, Jianbo Le, Nanxing Wu","doi":"10.1002/pssa.202300726","DOIUrl":"https://doi.org/10.1002/pssa.202300726","url":null,"abstract":"This investigation centers on exploring the plastic deformation removal mechanism and dislocation dynamics in the nano‐grinding of single crystal silicon carbide featuring a randomly rough surface. To simulate this, a novel approach combining the Weierstrass‐Mandelbrot fractal surface function with molecular dynamics is employed. Generate randomly rough surface contours using the Weierstrass‐Mandelbrot fractal surface function. By adjusting the fractal dimension, an ideal representation of single crystal silicon carbide with randomly rough surfaces is obtained. By combining plastic deformation detection methods, the process of workpiece sliding, plowing, and chip removal is thoroughly studied, and the plastic deformation removal mechanism of random rough surface grinding is explored; Combining post‐processing methods such as sheer strain and dislocation trajectory, analyze the morphological changes and transformation mechanisms of dislocations. Notably, at a grinding depth of 33.18nm, the activation of slip systems induces dislocation formation, enabling plastic deformation. Furthermore, at depths exceeding 144.00nm, the emergence of stacking faults on the random rough surface is observed. Throughout the grinding procedure, plastic deformation of debris occurs, leading to the formation of plastic bulges on both sides of the tool, the debris generated during processing does not significantly impact the defects encountered during secondary grinding of the rough surface.This article is protected by copyright. All rights reserved.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138952231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, Vertical Double Diffused MOSFET(VDMOS) with improved device structure is proposed. Gate engineering is applied in the proposed device and two devices namely dual stepped gate technology(DSGT) and modified dual stepped gate technology(m‐DSGT) are proposed here. Due to the effect of gate engineering switching ability is improved and area specific ON‐resistance is reduced. Devices are simulated using Silvaco Atlas software. Breakdown voltages for conventional and m‐DSGT are 278.63V and 280.02V, respectively, for VGS=0V. The current density of conventional and m‐DSGT devices is 49.2A/cm2 and 178.5A/cm2 under the conditions on gate drive voltage of 1V for VDS=10V. Using 2‐D numerical simulations, the electrical performance of both DSGT and m‐DSGT devices is examined. The results demonstrate 76.6% decrease in specific ON‐resistance, 4.22 times increase in current density and 26.67% faster switching speed compared to conventional VDMOS. Thus, improving the device performance.This article is protected by copyright. All rights reserved.
{"title":"Dual Stepped Gate Vertical Double Diffused MOSFET Technology with Enhanced Device Performance","authors":"Devesh Singh Sidar, Onika Parmar, Zeesha Mishra","doi":"10.1002/pssa.202300593","DOIUrl":"https://doi.org/10.1002/pssa.202300593","url":null,"abstract":"In this paper, Vertical Double Diffused MOSFET(VDMOS) with improved device structure is proposed. Gate engineering is applied in the proposed device and two devices namely dual stepped gate technology(DSGT) and modified dual stepped gate technology(m‐DSGT) are proposed here. Due to the effect of gate engineering switching ability is improved and area specific ON‐resistance is reduced. Devices are simulated using Silvaco Atlas software. Breakdown voltages for conventional and m‐DSGT are 278.63V and 280.02V, respectively, for VGS=0V. The current density of conventional and m‐DSGT devices is 49.2A/cm2 and 178.5A/cm2 under the conditions on gate drive voltage of 1V for VDS=10V. Using 2‐D numerical simulations, the electrical performance of both DSGT and m‐DSGT devices is examined. The results demonstrate 76.6% decrease in specific ON‐resistance, 4.22 times increase in current density and 26.67% faster switching speed compared to conventional VDMOS. Thus, improving the device performance.This article is protected by copyright. All rights reserved.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138948950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Ramirez‐DelaCruz, M. Bocanegra-Bernal, M. Márquez-Torres, E. Venegas-Contreras, G. Rojas-George, A. Reyes-Rojas
Quaternary compositions of polycrystalline Bi1.74Dy0.14W0.12‐xScxO3 (x = 0.02, 0.03, 0.04, 0.05, 0.06) solid solutions were synthesized by the solid‐state reaction method. The 4a site symmetry of the space group occupied by Sc3+ ion retains the cubic fluorite‐type over a wide temperature range (450‐700 oC) for low Sc3+ content without losing the δ‐phase. Dielectric and ionic conductivity by complex impedance in the frequency range from 0.1 to 100 kHz suggests a temperature and Sc3+‐dependent relaxation process. The ionic conductivity increases with the Sc3+ content over the whole tested temperature range. An oxygen ion conductivity of 0.102 Scm‐1 at 700 oC and an activation energy of 0.32 eV was achieved for x=0.06. Optical properties and Rietveld refinement indicate a band gap reduction due to a bond length reduction (Bi‐O). These materials have potential in photocatalysis and water‐splitting technology due to their UV and visible region absorption capabilities.This article is protected by copyright. All rights reserved.
{"title":"Dielectric and optical properties of δ‐Bi2O3 quaternary semiconducting solid solutions","authors":"A. Ramirez‐DelaCruz, M. Bocanegra-Bernal, M. Márquez-Torres, E. Venegas-Contreras, G. Rojas-George, A. Reyes-Rojas","doi":"10.1002/pssa.202300800","DOIUrl":"https://doi.org/10.1002/pssa.202300800","url":null,"abstract":"Quaternary compositions of polycrystalline Bi1.74Dy0.14W0.12‐xScxO3 (x = 0.02, 0.03, 0.04, 0.05, 0.06) solid solutions were synthesized by the solid‐state reaction method. The 4a site symmetry of the space group occupied by Sc3+ ion retains the cubic fluorite‐type over a wide temperature range (450‐700 oC) for low Sc3+ content without losing the δ‐phase. Dielectric and ionic conductivity by complex impedance in the frequency range from 0.1 to 100 kHz suggests a temperature and Sc3+‐dependent relaxation process. The ionic conductivity increases with the Sc3+ content over the whole tested temperature range. An oxygen ion conductivity of 0.102 Scm‐1 at 700 oC and an activation energy of 0.32 eV was achieved for x=0.06. Optical properties and Rietveld refinement indicate a band gap reduction due to a bond length reduction (Bi‐O). These materials have potential in photocatalysis and water‐splitting technology due to their UV and visible region absorption capabilities.This article is protected by copyright. All rights reserved.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139006718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents beta‐gallium oxide (β‐Ga2O3) Micro Electro Mechanical Systems (MEMS) strain/pressure sensors as a way to enhance sensitivity. The model consists of four piezoresistive strain gauges connected in a Wheatstone Bridge configuration. The MEMS model was simulated from 0 Pa to 50 kPa, resulting in an output signal range of ‐3 mV to 16 mV and a responsivity of 0.38 mV/kPa. Our simulation also showed that as temperature increased, the resistance of the piezoresistive material in the MEMS decreased, leading to changes in the output signals. The reliable device effectively utilizes the full Wheatstone Bridge configuration to compensate for temperature‐related influences. These early results suggest that Ga2O3‐based MEMS devices have great potential for use in high‐temperature pressure sensor applications in the future.This article is protected by copyright. All rights reserved.
{"title":"Numerical Simulation of Highly Sensitive Ga2O3 Pressure Sensor","authors":"Phuc Hong Than, Tuan Ngoc Dao, Yasushi Takaki","doi":"10.1002/pssa.202300534","DOIUrl":"https://doi.org/10.1002/pssa.202300534","url":null,"abstract":"This paper presents beta‐gallium oxide (β‐Ga2O3) Micro Electro Mechanical Systems (MEMS) strain/pressure sensors as a way to enhance sensitivity. The model consists of four piezoresistive strain gauges connected in a Wheatstone Bridge configuration. The MEMS model was simulated from 0 Pa to 50 kPa, resulting in an output signal range of ‐3 mV to 16 mV and a responsivity of 0.38 mV/kPa. Our simulation also showed that as temperature increased, the resistance of the piezoresistive material in the MEMS decreased, leading to changes in the output signals. The reliable device effectively utilizes the full Wheatstone Bridge configuration to compensate for temperature‐related influences. These early results suggest that Ga2O3‐based MEMS devices have great potential for use in high‐temperature pressure sensor applications in the future.This article is protected by copyright. All rights reserved.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139006675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reviews recent developments in the lattice‐mismatched epitaxy of InAs on (111)A‐oriented substrates and related research topics, in which the presence or absence of the misfit dislocations is controlled via prescribed growth sequences. When InAs is grown on GaAs (111)A substrates under standard growth conditions, a unique lattice‐relaxation mechanism occurs. A misfit dislocation network is formed at the initial stage of InAs growth, that is followed by the layer‐by‐layer growth of relaxed InAs films. The InAs/GaAs (111)A heterostructure is being applied in infrared photodetectors which have a new operating principle that employs the high density dislocations at the interface. The InAs/GaAs (111)A heterostructure is also useful for the growth of InGaAs layers: a nearly lattice‐relaxed InGaAs containing different concentrations of indium can be formed by inserting a thin‐InAs layer between the InGaAs and GaAs. These InGaAs layers can be used as virtual substrates with a desired lattice constant for a range of devices. In addition to the formation of lattice‐relaxed structures, dislocation‐free InAs QDs can be formed on InP (111)A substrates by applying droplet epitaxy. The C 3v symmetry of the (111)A surface makes it possible to form symmetric InAs quantum dots that emit entangled photon pairs at telecommunication wavelengths.This article is protected by copyright. All rights reserved.
{"title":"Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots","authors":"T. Mano, Akihiro Ohtake, Takashi Kuroda","doi":"10.1002/pssa.202300767","DOIUrl":"https://doi.org/10.1002/pssa.202300767","url":null,"abstract":"This paper reviews recent developments in the lattice‐mismatched epitaxy of InAs on (111)A‐oriented substrates and related research topics, in which the presence or absence of the misfit dislocations is controlled via prescribed growth sequences. When InAs is grown on GaAs (111)A substrates under standard growth conditions, a unique lattice‐relaxation mechanism occurs. A misfit dislocation network is formed at the initial stage of InAs growth, that is followed by the layer‐by‐layer growth of relaxed InAs films. The InAs/GaAs (111)A heterostructure is being applied in infrared photodetectors which have a new operating principle that employs the high density dislocations at the interface. The InAs/GaAs (111)A heterostructure is also useful for the growth of InGaAs layers: a nearly lattice‐relaxed InGaAs containing different concentrations of indium can be formed by inserting a thin‐InAs layer between the InGaAs and GaAs. These InGaAs layers can be used as virtual substrates with a desired lattice constant for a range of devices. In addition to the formation of lattice‐relaxed structures, dislocation‐free InAs QDs can be formed on InP (111)A substrates by applying droplet epitaxy. The C\u00003v\u0000 symmetry of the (111)A surface makes it possible to form symmetric InAs quantum dots that emit entangled photon pairs at telecommunication wavelengths.This article is protected by copyright. All rights reserved.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139009963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shyam S. Pandey, Kazuhiro Marumoto, Takaaki Manaka
The organic photofunctional materials bearing the fl exibility, softness and capability of facile large active area fabrication will bene fi t the fi elds of biomedical/biomimetic devices like sensors, soft actuators, and fl exible and wearable optoelectronic devices, which are cumbersome to achieve utilizing conventional inorganic semiconductors. It is worth to mention that that the functions of optoelectronic devices mostly originate from electronic states at the interface between constituent organic materials by the depth of the nanometric region. The intricate interactions and cooperative existence amongst various components of the living organism indicate the possibility of the realization of ef fi - cient multifunctional devices. Therefore, the investigations of electronic behaviour, mass transport, energy transfer and molecular alignments near the interface are signi fi cantly important and suggest to us the unknown functions that can be developed into molecular electronics. This special issue has been dedicated to the 13th International Conference on Nano-Molecular Electronics (ICNME-2022), which was held from December 12-14, 2022 at the Tokyo Institute of Technology, Ookayama, Tokyo, Japan. The conference was of the open style and provided a unique platform for researchers from industry and academia interested in fundamental and applied aspects of functional organic materials, including liquid crystals, polymeric materials, biomaterials etc. to interact and exchange scienti fi c ideas. The program of this conference consisted of the plenary talk, keynote lecture, invited talk, oral and poster presentations. The conference consisted of 8 versatile sessions such as organic semiconductor materials and devices I & II, Fabrication and characterization of organic and molecular devices I & II, Bioelectronics, AI and materials informatics, Organic-Inorganic hybrid material and applications, and Haptic, wearable, fl exible devices and applications. A total of 125 papers (39 Oral and 86 poster) have been contributed from universities, research laboratories and companies in Japan and overseas. The topics of electrical, optical, and physical properties at
{"title":"Organic Nanomolecular Electronics: From Fundamental Aspects to Device Applications","authors":"Shyam S. Pandey, Kazuhiro Marumoto, Takaaki Manaka","doi":"10.1002/pssa.202300847","DOIUrl":"https://doi.org/10.1002/pssa.202300847","url":null,"abstract":"The organic photofunctional materials bearing the fl exibility, softness and capability of facile large active area fabrication will bene fi t the fi elds of biomedical/biomimetic devices like sensors, soft actuators, and fl exible and wearable optoelectronic devices, which are cumbersome to achieve utilizing conventional inorganic semiconductors. It is worth to mention that that the functions of optoelectronic devices mostly originate from electronic states at the interface between constituent organic materials by the depth of the nanometric region. The intricate interactions and cooperative existence amongst various components of the living organism indicate the possibility of the realization of ef fi - cient multifunctional devices. Therefore, the investigations of electronic behaviour, mass transport, energy transfer and molecular alignments near the interface are signi fi cantly important and suggest to us the unknown functions that can be developed into molecular electronics. This special issue has been dedicated to the 13th International Conference on Nano-Molecular Electronics (ICNME-2022), which was held from December 12-14, 2022 at the Tokyo Institute of Technology, Ookayama, Tokyo, Japan. The conference was of the open style and provided a unique platform for researchers from industry and academia interested in fundamental and applied aspects of functional organic materials, including liquid crystals, polymeric materials, biomaterials etc. to interact and exchange scienti fi c ideas. The program of this conference consisted of the plenary talk, keynote lecture, invited talk, oral and poster presentations. The conference consisted of 8 versatile sessions such as organic semiconductor materials and devices I & II, Fabrication and characterization of organic and molecular devices I & II, Bioelectronics, AI and materials informatics, Organic-Inorganic hybrid material and applications, and Haptic, wearable, fl exible devices and applications. A total of 125 papers (39 Oral and 86 poster) have been contributed from universities, research laboratories and companies in Japan and overseas. The topics of electrical, optical, and physical properties at","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139019920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jacqueline Cooke, Leila Ghadbeigi, Rujun Sun, A. Bhattacharyya, Yunshan Wang, M. Scarpulla, S. Krishnamoorthy, B. Sensale‐Rodriguez
Herein, wafer‐scale Ga2O3 films are shown, which are synthesized by oxide printing of liquid metal Ga on SiO2/Si and sapphire substrates. This process enables highly uniform ≈2 nm‐thick films over ≫1 mm2 areas. The physical properties of these films (as‐deposited and after annealing in ambient conditions) are investigated. X‐ray photoelectron spectroscopy indicates that the as‐prepared films contain significant fractions (up to 8% wt) of Ga metal residue, which completely converts to Ga2O3 after annealing. Results from Raman spectroscopy confirm the presence of β‐phase in annealed samples. Transmission electron microscopy images indicate that the films are composed of polycrystalline domains. Photoluminescence is observed in all samples, depicting the typical spectrum of Ga2O3 with four emission bands. After annealing, the luminescence intensity increases across all samples, which is attributed to an enhancement in crystallinity. Also, the relative intensity of the blue emission decreases after annealing, which is consistent with a transition from bluish to greenish color in the films. This observation is associated with a change in defect population upon annealing. Overall, these results demonstrate that oxide printing of liquid metal gallium is a simple process that, upon annealing of the resulting films, leads to nanometer‐thin β‐Ga2O3 films over wafer‐scale areas.
{"title":"Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga2O3 Films from Oxide Printing of Liquid Metal Gallium","authors":"Jacqueline Cooke, Leila Ghadbeigi, Rujun Sun, A. Bhattacharyya, Yunshan Wang, M. Scarpulla, S. Krishnamoorthy, B. Sensale‐Rodriguez","doi":"10.1002/pssa.201901007","DOIUrl":"https://doi.org/10.1002/pssa.201901007","url":null,"abstract":"Herein, wafer‐scale Ga2O3 films are shown, which are synthesized by oxide printing of liquid metal Ga on SiO2/Si and sapphire substrates. This process enables highly uniform ≈2 nm‐thick films over ≫1 mm2 areas. The physical properties of these films (as‐deposited and after annealing in ambient conditions) are investigated. X‐ray photoelectron spectroscopy indicates that the as‐prepared films contain significant fractions (up to 8% wt) of Ga metal residue, which completely converts to Ga2O3 after annealing. Results from Raman spectroscopy confirm the presence of β‐phase in annealed samples. Transmission electron microscopy images indicate that the films are composed of polycrystalline domains. Photoluminescence is observed in all samples, depicting the typical spectrum of Ga2O3 with four emission bands. After annealing, the luminescence intensity increases across all samples, which is attributed to an enhancement in crystallinity. Also, the relative intensity of the blue emission decreases after annealing, which is consistent with a transition from bluish to greenish color in the films. This observation is associated with a change in defect population upon annealing. Overall, these results demonstrate that oxide printing of liquid metal gallium is a simple process that, upon annealing of the resulting films, leads to nanometer‐thin β‐Ga2O3 films over wafer‐scale areas.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141210743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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