A. Scandurra, G. Bellocchi, Giuseppe Arena, S. Rascunà, Michele Calabretta, Massimo Boscaglia, Mario Saggio, Giacometta Mineo, V. Iacono, S. Boscarino, Salvatore Mirabella, Francesco Ruffino, Maria Grazia Grimaldi
Composition and morphology of two types of bilayers of plasma‐enhanced chemical vapor deposition hydrogened silicon nitride (SiNx:H) and polyimide (PI), as effcient barrier against moisture in SiC‐based power devices, are investigated. Two types of silicon nitrides are obtained by changing the flow ratios of the SiH4 and NH3 precursors. Rutherford Backscatterered analyses show that the Si/N ratio varies from 0.6 to 0.8. Elastic recoil detection analyses show that the sample with higher nitrogen content has a higher total bound hydrogen content of 7.8 × 1017 cm−2 with respect to the 7.1 × 1017 cm−2. Fourier‐transform infrared spectroscopy characterizations show Si–H group concentrations of 0.96 × 1017 and 6.86 × 1017 cm−2 and NH groups of 4.82 × 1017 and 2.28 × 1017 cm−2, respectively. Silicon nitride films with higher concentration of N–H groups show higher reactivity and permeability to water, making them less effective as a barrier layer. Atomic force microscopy analyses of a PI layer deposited on the nitride layer, SiNx:H/PI show for both type of samples a similar roughness, indicating planarization that can increase the adhesion of SiNx:H/PI and resistance to moisture. The delamination mechanism of the bilayer under pressure pot test conditions is proposed.
{"title":"Effects of Hydrogen Bonding in Silicon Nitride/Polyimide Passivation Bilayer in SiC Power Devices","authors":"A. Scandurra, G. Bellocchi, Giuseppe Arena, S. Rascunà, Michele Calabretta, Massimo Boscaglia, Mario Saggio, Giacometta Mineo, V. Iacono, S. Boscarino, Salvatore Mirabella, Francesco Ruffino, Maria Grazia Grimaldi","doi":"10.1002/pssa.202400273","DOIUrl":"https://doi.org/10.1002/pssa.202400273","url":null,"abstract":"Composition and morphology of two types of bilayers of plasma‐enhanced chemical vapor deposition hydrogened silicon nitride (SiNx:H) and polyimide (PI), as effcient barrier against moisture in SiC‐based power devices, are investigated. Two types of silicon nitrides are obtained by changing the flow ratios of the SiH4 and NH3 precursors. Rutherford Backscatterered analyses show that the Si/N ratio varies from 0.6 to 0.8. Elastic recoil detection analyses show that the sample with higher nitrogen content has a higher total bound hydrogen content of 7.8 × 1017 cm−2 with respect to the 7.1 × 1017 cm−2. Fourier‐transform infrared spectroscopy characterizations show Si–H group concentrations of 0.96 × 1017 and 6.86 × 1017 cm−2 and NH groups of 4.82 × 1017 and 2.28 × 1017 cm−2, respectively. Silicon nitride films with higher concentration of N–H groups show higher reactivity and permeability to water, making them less effective as a barrier layer. Atomic force microscopy analyses of a PI layer deposited on the nitride layer, SiNx:H/PI show for both type of samples a similar roughness, indicating planarization that can increase the adhesion of SiNx:H/PI and resistance to moisture. The delamination mechanism of the bilayer under pressure pot test conditions is proposed.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"13 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141273619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bi2VO5.5‐based materials are well‐known oxide ion conductors owing to their exceptionally high ionic conductivity. However, their poor phase and redox stabilities under a reducing atmosphere hinder their practical application as electrolytes for solid oxide fuel cells. Here, a series of novel quadruple metal‐doped bismuth vanadium system materials Bi2V1−4x(CuNiNbTi)xO5.5−δ (0 ≤ x ≤ 0.1) are prepared through a traditional solid state reaction method, aiming to enhance the phase and redox stability under reducing atmosphere. The results reveal that multiple‐metal‐doping can stabilize the tetragonal phase of Bi2VO5.5 to room temperature and show good phase and structural stabilities under inert or high oxygen partial pressure atmospheres, as well as pure oxide ion conduction which is slightly lower than that of the parent material. However, under a reducing environment, the Bi2V1−4x(CuNiNbTi)xO5.5−δ materials would still undergo a phase decomposition, yielding elemental bismuth impurity, and introducing strong electronic conduction. Thus, how to improve the phase and redox stabilities under the reducing atmosphere of the Bi2VO5.5‐based materials is still the endeavor direction in the future.
{"title":"Redox Stability and Electrical Properties of a Series of Novel Quadruple Dopant BIMEVOX: Bi2V1−4x(CuNiNbTi)xO5.5−δ","authors":"Xingping Song, Mingze Zhang, Laijun Liu, Jungu Xu","doi":"10.1002/pssa.202300915","DOIUrl":"https://doi.org/10.1002/pssa.202300915","url":null,"abstract":"Bi2VO5.5‐based materials are well‐known oxide ion conductors owing to their exceptionally high ionic conductivity. However, their poor phase and redox stabilities under a reducing atmosphere hinder their practical application as electrolytes for solid oxide fuel cells. Here, a series of novel quadruple metal‐doped bismuth vanadium system materials Bi2V1−4x(CuNiNbTi)xO5.5−δ (0 ≤ x ≤ 0.1) are prepared through a traditional solid state reaction method, aiming to enhance the phase and redox stability under reducing atmosphere. The results reveal that multiple‐metal‐doping can stabilize the tetragonal phase of Bi2VO5.5 to room temperature and show good phase and structural stabilities under inert or high oxygen partial pressure atmospheres, as well as pure oxide ion conduction which is slightly lower than that of the parent material. However, under a reducing environment, the Bi2V1−4x(CuNiNbTi)xO5.5−δ materials would still undergo a phase decomposition, yielding elemental bismuth impurity, and introducing strong electronic conduction. Thus, how to improve the phase and redox stabilities under the reducing atmosphere of the Bi2VO5.5‐based materials is still the endeavor direction in the future.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"2 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141274098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Maciej Kamiński, Andrzej Taube, Jarosław Tarenko, Oskar Sadowski, Ernest Brzozowski, Justyna Wierzbicka, Magdalena Zadura, Marek Ekielski, K. Kosiel, Joanna Jankowska‐Śliwińska, Kamil Abendroth, Anna Szerling, P. Prystawko, Michał Boćkowski, I. Grzegory
Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on ammonothermally grown bulk GaN substrates have been reported. A number of technological processes have been developed, including, among others, low‐resistance ohmic contacts to Ga‐face n‐GaN epitaxial layers, N‐face backside ohmic contact, vertical sidewall trench etching processes, surface preparation, and atomic layer deposition of gate dielectric layers and integrated with fabrication process flow of vertical power devices. The fabricated test structures are characterized by an output drain current of 288 ± 74 mA mm−1, threshold voltage of about 10 V, and field‐effect channel mobility 13.1 ± 5.0 cm2 (Vs)−1 at 10 V drain‐source voltage and up to 65 cm2 (Vs)−1 at 0.1 V drain‐source voltage. In addition, first, experiments toward high current multicell transistor fabrication are carried out. Multicell test devices with hexagonal topology with a total gate width of 11.1 mm and output current over 1 A are successfully fabricated and characterized.
本文报告了在氨热法生长的块状氮化镓衬底上制造垂直氮化镓沟槽-MOSFET的过程和特性。该研究开发了一系列技术工艺，包括 Ga 面 n-GaN 外延层的低电阻欧姆接触、N 面背面欧姆接触、垂直侧壁沟槽蚀刻工艺、表面制备以及栅极介电层的原子层沉积，并与垂直功率器件的制造工艺流程相结合。制造出的测试结构的输出漏极电流为 288 ± 74 mA mm-1，阈值电压约为 10 V，场效应沟道迁移率在 10 V 漏极-源极电压下为 13.1 ± 5.0 cm2 (Vs)-1，在 0.1 V 漏极-源极电压下高达 65 cm2 (Vs)-1。此外，还首先进行了大电流多胞晶体管制造实验。成功制作并表征了具有六边形拓扑结构、总栅极宽度为 11.1 mm、输出电流超过 1 A 的多单元测试器件。
{"title":"Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates","authors":"Maciej Kamiński, Andrzej Taube, Jarosław Tarenko, Oskar Sadowski, Ernest Brzozowski, Justyna Wierzbicka, Magdalena Zadura, Marek Ekielski, K. Kosiel, Joanna Jankowska‐Śliwińska, Kamil Abendroth, Anna Szerling, P. Prystawko, Michał Boćkowski, I. Grzegory","doi":"10.1002/pssa.202400077","DOIUrl":"https://doi.org/10.1002/pssa.202400077","url":null,"abstract":"Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on ammonothermally grown bulk GaN substrates have been reported. A number of technological processes have been developed, including, among others, low‐resistance ohmic contacts to Ga‐face n‐GaN epitaxial layers, N‐face backside ohmic contact, vertical sidewall trench etching processes, surface preparation, and atomic layer deposition of gate dielectric layers and integrated with fabrication process flow of vertical power devices. The fabricated test structures are characterized by an output drain current of 288 ± 74 mA mm−1, threshold voltage of about 10 V, and field‐effect channel mobility 13.1 ± 5.0 cm2 (Vs)−1 at 10 V drain‐source voltage and up to 65 cm2 (Vs)−1 at 0.1 V drain‐source voltage. In addition, first, experiments toward high current multicell transistor fabrication are carried out. Multicell test devices with hexagonal topology with a total gate width of 11.1 mm and output current over 1 A are successfully fabricated and characterized.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"25 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141272779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ryota Kanda, Taiki Kitade, Atsushi Nishikawa, A. Loesing, Hiroto Sekiguchi
Flexible light‐emitting devices have attracted attention as a novel bio‐interface connecting living tissues with electronics due to their high brightness, low power consumption, and durability in humid environments. Introduction of vertically current‐injected micro‐light‐emitting diodes (MicroLEDs) into this film can enhance the MicroLED effective area and improve device characteristics. In this study, the MicroLED transfer technology onto conductive materials is investigated. The feasibility of batch transferring MicroLEDs onto a conductive polymer is demonstrated by PEDOT:PSS layer. For non‐Ohmic characteristics between n‐GaN and PEDOT:PSS, a backside‐open MicroLED hollow structure is proposed, enabling the formation of Ti/Au electrodes on the backside of MicroLED. By transferring the fabricated vertically current‐injected MicroLEDs onto the PEDOT:PSS layer, a flexible vertically current‐injected LED film is achieved, observing uniform blue light emission. The developed MicroLED film holds promise as a new neuroscience tool for targeting specific areas of the brain with light.
{"title":"Fabrication Process of MicroLED Film for Achieving Vertical Current Injection Using Transfer Technology","authors":"Ryota Kanda, Taiki Kitade, Atsushi Nishikawa, A. Loesing, Hiroto Sekiguchi","doi":"10.1002/pssa.202400051","DOIUrl":"https://doi.org/10.1002/pssa.202400051","url":null,"abstract":"\u0000Flexible light‐emitting devices have attracted attention as a novel bio‐interface connecting living tissues with electronics due to their high brightness, low power consumption, and durability in humid environments. Introduction of vertically current‐injected micro‐light‐emitting diodes (MicroLEDs) into this film can enhance the MicroLED effective area and improve device characteristics. In this study, the MicroLED transfer technology onto conductive materials is investigated. The feasibility of batch transferring MicroLEDs onto a conductive polymer is demonstrated by PEDOT:PSS layer. For non‐Ohmic characteristics between n‐GaN and PEDOT:PSS, a backside‐open MicroLED hollow structure is proposed, enabling the formation of Ti/Au electrodes on the backside of MicroLED. By transferring the fabricated vertically current‐injected MicroLEDs onto the PEDOT:PSS layer, a flexible vertically current‐injected LED film is achieved, observing uniform blue light emission. The developed MicroLED film holds promise as a new neuroscience tool for targeting specific areas of the brain with light.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"41 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140972747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Butej, Dominik Wieland, D. Pogany, Amgad Gharib, G. Pobegen, C. Ostermaier, Christian Koller
Gallium nitride (GaN)‐on‐Si high electron mobility transistors require insulating GaN buffers, which are prone to charge trapping and result in dynamic ON‐state resistance (dR DS,on) that negatively impacts performance and reliability. Herein, simultaneous measurements of threshold voltage shift (dV TH) and dR DS,on during OFF‐state stress with microsecond time resolution are employed. Ohmic p‐GaN gate contacts enable the use of dV TH to probe charge accumulation under the gate, while dR DS,on probes charge accumulation in the gate‐drain access region. Comparison of dV TH and dR DS,on provides direct evidence of lateral hole transport in the GaN buffer when exposed to a lateral electric field in OFF‐state. This lateral hole transport causes positive charge accumulation in the buffer under the gate and triggers a newly proposed electron injection mechanism into the same region. Only by considering the combination of lateral hole transport and electron injection under the gate the observed up to fivefold dR DS,on increase in OFF‐state stress compared to back‐gating at low biases can be explained. Furthermore, another electron spillover mechanism is introduced that occurs for large positive charge accumulation under the gate and limits the maximum negative dV TH. All known and newly introduced processes during OFF‐state are summarized in a concise dynamic buffer charging model.
{"title":"Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model","authors":"B. Butej, Dominik Wieland, D. Pogany, Amgad Gharib, G. Pobegen, C. Ostermaier, Christian Koller","doi":"10.1002/pssa.202400089","DOIUrl":"https://doi.org/10.1002/pssa.202400089","url":null,"abstract":"Gallium nitride (GaN)‐on‐Si high electron mobility transistors require insulating GaN buffers, which are prone to charge trapping and result in dynamic ON‐state resistance (dR\u0000DS,on) that negatively impacts performance and reliability. Herein, simultaneous measurements of threshold voltage shift (dV\u0000TH) and dR\u0000DS,on during OFF‐state stress with microsecond time resolution are employed. Ohmic p‐GaN gate contacts enable the use of dV\u0000TH to probe charge accumulation under the gate, while dR\u0000DS,on probes charge accumulation in the gate‐drain access region. Comparison of dV\u0000TH and dR\u0000DS,on provides direct evidence of lateral hole transport in the GaN buffer when exposed to a lateral electric field in OFF‐state. This lateral hole transport causes positive charge accumulation in the buffer under the gate and triggers a newly proposed electron injection mechanism into the same region. Only by considering the combination of lateral hole transport and electron injection under the gate the observed up to fivefold dR\u0000DS,on increase in OFF‐state stress compared to back‐gating at low biases can be explained. Furthermore, another electron spillover mechanism is introduced that occurs for large positive charge accumulation under the gate and limits the maximum negative dV\u0000TH. All known and newly introduced processes during OFF‐state are summarized in a concise dynamic buffer charging model.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"71 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140973589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The most crucial initial step in the metallization process of electroplating is the local contact openings in dielectric layers. In this article, an ultraviolet picosecond laser (UV‐ps), is used to open the front and back dielectric layer of the precursor of n‐TOPCon solar cells. By changing the laser parameters and spot overlap rate, the surface morphology of laser etching under different conditions is obtained and characterized by optical microscope and scanning electron microscope. The results indicate that there are three separate laser shock zones in the dielectric layer under the action of Gaussian light spot, and the corresponding ablation mechanisms are proposed. The longitudinal distribution of B element is characterized by secondary ion mass spectrometry to explore the effect of laser on its pn junction. In addition, the electrical characterization of lifetime photoluminescence is measured and calibrated using WCT120, and this indicates that the majority of the amorphous silicon is recrystallized when applying a fast firing oven process, and this hence improve the minority carrier lifetime and implied open‐circuit voltage. The laser damage to the emitter at the laser‐ablated regions is investigated using the emitter saturation current density, J0laser extracted by WCT120.
{"title":"Investigating the Application and Impact of Laser Etching Technology in the Fabrication of Solar Cells","authors":"Zhao Wang, Guanggui Cheng, Zigang Wang, Kuiyi Wu, Daming Chen, Yifeng Chen, Li Yin, Haixia Liu, Ningyi Yuan, Jifan Gao, Jianning Ding","doi":"10.1002/pssa.202300795","DOIUrl":"https://doi.org/10.1002/pssa.202300795","url":null,"abstract":"\u0000The most crucial initial step in the metallization process of electroplating is the local contact openings in dielectric layers. In this article, an ultraviolet picosecond laser (UV‐ps), is used to open the front and back dielectric layer of the precursor of n‐TOPCon solar cells. By changing the laser parameters and spot overlap rate, the surface morphology of laser etching under different conditions is obtained and characterized by optical microscope and scanning electron microscope. The results indicate that there are three separate laser shock zones in the dielectric layer under the action of Gaussian light spot, and the corresponding ablation mechanisms are proposed. The longitudinal distribution of B element is characterized by secondary ion mass spectrometry to explore the effect of laser on its pn junction. In addition, the electrical characterization of lifetime photoluminescence is measured and calibrated using WCT120, and this indicates that the majority of the amorphous silicon is recrystallized when applying a fast firing oven process, and this hence improve the minority carrier lifetime and implied open‐circuit voltage. The laser damage to the emitter at the laser‐ablated regions is investigated using the emitter saturation current density, J0laser extracted by WCT120.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"56 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140974993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Patrick Stargardt, Sophie Bresch, Rainer Falkenberg, Björn Mieller
A widespread recovery of waste heat requires a cost‐effective production of thermoelectric generators. Thermoelectric oxides are predestined for use at high temperatures. For manufacturing reasons, a multilayer generator design will be easily scalable and cost‐effective. To evaluate the potential of ceramic multilayer technology for that purpose, a multilayer of the promising thermoelectric oxides calcium cobaltite (Ca3Co4O9), calcium manganate (CMO, CaMnO3), and glass–ceramic insulation layers is fabricated. Cracks and reaction layers at the interfaces are observed in the microstructure. The compositions of these reaction layers are identified by energy‐dispersive X‐ray spectroscopy and X‐ray diffraction. Mechanical and thermal properties of all layers are compiled from literature or determined by purposeful sample preparation and testing. Based on this data set, the internal stresses in the multilayer after co‐firing are calculated numerically. It is shown that tensile stresses in the range of 50 MPa occur in the CMO layers. The reaction layers have only a minor influence on the level of these residual stresses. Herein, it is proven that the material system is basically suitable for multilayer generator production, but that the co‐firing process and the layer structure must be adapted to improve densification and reduce the tensile stresses in the CMO.
要广泛回收废热，就必须生产出具有成本效益的热电发电机。热电氧化物注定要在高温下使用。出于制造方面的考虑，多层发电机的设计应易于扩展且具有成本效益。为了评估陶瓷多层技术在这方面的潜力，我们制作了由前景看好的热电氧化物钴酸钙（Ca3Co4O9）、锰酸钙（CMO，CaMnO3）和玻璃陶瓷绝缘层组成的多层。在微观结构中观察到了界面处的裂缝和反应层。通过能量色散 X 射线光谱和 X 射线衍射确定了这些反应层的成分。所有反应层的机械性能和热性能都是根据文献或通过有目的的样品制备和测试确定的。根据这组数据，用数值计算了共烧制后多层炉中的内应力。结果表明，在 CMO 层中会产生 50 兆帕的拉伸应力。反应层对这些残余应力的影响很小。由此证明，该材料系统基本上适用于多层发电机的生产，但必须调整共烧工艺和层结构，以提高致密化程度并降低 CMO 中的拉伸应力。
{"title":"Effect of Reaction Layers on Internal Stresses in Co‐Fired Multilayers of Calcium Manganate and Calcium Cobaltite","authors":"Patrick Stargardt, Sophie Bresch, Rainer Falkenberg, Björn Mieller","doi":"10.1002/pssa.202300956","DOIUrl":"https://doi.org/10.1002/pssa.202300956","url":null,"abstract":"A widespread recovery of waste heat requires a cost‐effective production of thermoelectric generators. Thermoelectric oxides are predestined for use at high temperatures. For manufacturing reasons, a multilayer generator design will be easily scalable and cost‐effective. To evaluate the potential of ceramic multilayer technology for that purpose, a multilayer of the promising thermoelectric oxides calcium cobaltite (Ca3Co4O9), calcium manganate (CMO, CaMnO3), and glass–ceramic insulation layers is fabricated. Cracks and reaction layers at the interfaces are observed in the microstructure. The compositions of these reaction layers are identified by energy‐dispersive X‐ray spectroscopy and X‐ray diffraction. Mechanical and thermal properties of all layers are compiled from literature or determined by purposeful sample preparation and testing. Based on this data set, the internal stresses in the multilayer after co‐firing are calculated numerically. It is shown that tensile stresses in the range of 50 MPa occur in the CMO layers. The reaction layers have only a minor influence on the level of these residual stresses. Herein, it is proven that the material system is basically suitable for multilayer generator production, but that the co‐firing process and the layer structure must be adapted to improve densification and reduce the tensile stresses in the CMO.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"122 36","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140977395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Tateno, Masato Takiguchi, Kazuaki Ebata, Satoshi Sasaki, K. Kumakura, Y. Taniyasu
Nanophotonic devices made from nitride semiconductors are promising for various applications, especially those utilizing ultraviolet‐visible light with low‐power consumption and high driving speed. Herein, nanowire structures are fabricated from a light‐emitting diode epitaxial wafer and demonstrates the effectiveness of wet etching in top‐down fabrication. Spontaneous emission from active layers and unanticipated lasing derived from a GaN layer in a single nanowire are observed by microphotoluminescence measurement. Lastly, the lasing mode through a 3D simulation of the eigenmodes in this nanowire structure is clarified.
{"title":"Light Emission Characteristics in Nitride Semiconductor Nanowires Fabricated by Top‐down Method","authors":"K. Tateno, Masato Takiguchi, Kazuaki Ebata, Satoshi Sasaki, K. Kumakura, Y. Taniyasu","doi":"10.1002/pssa.202400078","DOIUrl":"https://doi.org/10.1002/pssa.202400078","url":null,"abstract":"Nanophotonic devices made from nitride semiconductors are promising for various applications, especially those utilizing ultraviolet‐visible light with low‐power consumption and high driving speed. Herein, nanowire structures are fabricated from a light‐emitting diode epitaxial wafer and demonstrates the effectiveness of wet etching in top‐down fabrication. Spontaneous emission from active layers and unanticipated lasing derived from a GaN layer in a single nanowire are observed by microphotoluminescence measurement. Lastly, the lasing mode through a 3D simulation of the eigenmodes in this nanowire structure is clarified.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"56 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140972389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng
In0.17Al0.83N/GaN high‐electron‐mobility transistor (HEMT) using GaN‐on‐Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X‐Ray diffraction and micro‐Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate‐length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN‐based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm‐wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high‐power and RF applications, enabling more compact and efficient systems.
通过 200 毫米晶圆键合技术，利用氮化镓绝缘体（GaNOI）技术开发出 In0.17Al0.83N/GaN 高电子迁移率晶体管（HEMT），具有良好的直流和射频性能以及高 fT/fmax。X 射线衍射和微拉曼光谱的测量结果表明，"晶格应变 "降低了 5%，从而使薄层电阻 (Rsh) 从 301 Ω □-1 提高到 284 Ω □-1。120 nm 栅极长度器件的峰值 fT 高达 96 GHz，产生的 fT × Lg 值为 11.5 GHz μm，与已报道的硅基氮化镓 HEMT 相比毫不逊色。这些结果表明，硅基 GaNOI HEMT 是未来毫米波应用的一个极具吸引力的候选器件。GaNOI 技术的实施促进了 GaN 器件与互补金属氧化物半导体技术一起集成到芯片中，为集成大功率和射频应用开辟了潜力，使系统更加紧凑高效。
{"title":"First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding","authors":"Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng","doi":"10.1002/pssa.202300953","DOIUrl":"https://doi.org/10.1002/pssa.202300953","url":null,"abstract":"In0.17Al0.83N/GaN high‐electron‐mobility transistor (HEMT) using GaN‐on‐Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X‐Ray diffraction and micro‐Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate‐length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN‐based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm‐wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high‐power and RF applications, enabling more compact and efficient systems.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"115 19","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140978114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A tunable fiber optic (FO) long‐range surface plasmon (LRSP) sensor with strong coupling is developed and demonstrated theoretically in this article. The sensor consists of a square lattice array of Ag nanodisks resting on the FO end face. Utilizing nanodisks with small diameters leads to the pronounced excitation of two distinct and independent resonant modes: surface plasmon polaritons (SPP) and LRSP. A systematic investigation is performed to evaluate the sensing performance and capabilities of the sensor, focusing on its bulk and surface sensitivity. Significantly, the LRSP mode demonstrates high sensitivity and favorable linearity in response to refractive index (RI) changes, with an exceptionally high figure of merit (FOM). On the contrary, the SPP mode is regarded as an ideal self‐referencing mode due to its immunity to RI fluctuations. The enlargement of nanodisks diameters results in a swift redshift in the LRSP wavelength, leading to a strong coupling with the SPP mode. This coupling facilitates the transfer of electric fields within the SPP mode, promotes sensing capabilities, and enables the realization of dual‐channel sensing functionality. The occurrence of strong coupling phenomena along with the use of FO substrates provides an innovative option for achieving multifunctionality and miniaturization in sensor platforms.
{"title":"Enhanced Fiber Long‐Range Surface Plasmon Sensing Enabled by Resonance Coupling to Surface Plasmon Polaritons","authors":"Penglei Li, Lixia Li, Xue-wen Zong, Linlin Zhao, Fugui Lei, Yufang Liu","doi":"10.1002/pssa.202300752","DOIUrl":"https://doi.org/10.1002/pssa.202300752","url":null,"abstract":"A tunable fiber optic (FO) long‐range surface plasmon (LRSP) sensor with strong coupling is developed and demonstrated theoretically in this article. The sensor consists of a square lattice array of Ag nanodisks resting on the FO end face. Utilizing nanodisks with small diameters leads to the pronounced excitation of two distinct and independent resonant modes: surface plasmon polaritons (SPP) and LRSP. A systematic investigation is performed to evaluate the sensing performance and capabilities of the sensor, focusing on its bulk and surface sensitivity. Significantly, the LRSP mode demonstrates high sensitivity and favorable linearity in response to refractive index (RI) changes, with an exceptionally high figure of merit (FOM). On the contrary, the SPP mode is regarded as an ideal self‐referencing mode due to its immunity to RI fluctuations. The enlargement of nanodisks diameters results in a swift redshift in the LRSP wavelength, leading to a strong coupling with the SPP mode. This coupling facilitates the transfer of electric fields within the SPP mode, promotes sensing capabilities, and enables the realization of dual‐channel sensing functionality. The occurrence of strong coupling phenomena along with the use of FO substrates provides an innovative option for achieving multifunctionality and miniaturization in sensor platforms.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"51 25","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139527787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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