Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522315
P. Fuierer, A. Nichtawitz
An electric field applied across a specimen during the forging process is expected to affect the kinetics of grain growth and orientation. In addition, just as a field can align molecules in a nematic liquid with the axis of greatest polarizability in the direction of the applied field, it is possible that the polar axis in a crystallite may also be aligned during the high temperature densification process. This may improve the electric or piezoelectric properties of certain low symmetry ferroelectric materials. The idea is to combine crystallographic alignment, densification and poling all into one step, and approach single crystal-like properties in a polycrystalline ceramic. Electric fields (both DC and AC) were applied transverse to the forging direction of the low symmetry ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/. The AC field was found to have little influence on crystallographic orientation. The DC field was found to have a profound effect; aligning the polar axis during forging, and yielding further anisotropy in the ferroelectric hysteresis.
{"title":"Electric field assisted hot forging of bismuth titanate","authors":"P. Fuierer, A. Nichtawitz","doi":"10.1109/ISAF.1994.522315","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522315","url":null,"abstract":"An electric field applied across a specimen during the forging process is expected to affect the kinetics of grain growth and orientation. In addition, just as a field can align molecules in a nematic liquid with the axis of greatest polarizability in the direction of the applied field, it is possible that the polar axis in a crystallite may also be aligned during the high temperature densification process. This may improve the electric or piezoelectric properties of certain low symmetry ferroelectric materials. The idea is to combine crystallographic alignment, densification and poling all into one step, and approach single crystal-like properties in a polycrystalline ceramic. Electric fields (both DC and AC) were applied transverse to the forging direction of the low symmetry ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/. The AC field was found to have little influence on crystallographic orientation. The DC field was found to have a profound effect; aligning the polar axis during forging, and yielding further anisotropy in the ferroelectric hysteresis.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"55 1","pages":"126-129"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91477920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522411
I. Lin, Kuo-Shung Liu, S. Tu, Sheng‐Jenn Yang
The PLZT films highly textured in (110) orientation have been successfully grown on SrTiO/sub 3/-buffered silicon substrates. The films deposited by pulsed laser deposition are assumed to be formed via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of the amorphous to perovskite phase transformation. Thereby, the loss of Pb-species in the films is thus suppressed. The optimum dielectric constants obtained are around /sub /spl epsi/r/=490 for PLZT/STO/Si films deposited at 550/spl deg/C (1 mbar Po/sub 2/) and post-annealed at 550/spl deg/C (1 atm Po/sub 2/). Furthermore, the corresponding charge storage density is around Q/sub c//spl ap/1.5 /spl mu/c/cm/sup 2/, at 50 KV/cm applied field strength.
{"title":"The growth behavior of Pb-containing perovskite thin films using pulsed laser deposition technique","authors":"I. Lin, Kuo-Shung Liu, S. Tu, Sheng‐Jenn Yang","doi":"10.1109/ISAF.1994.522411","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522411","url":null,"abstract":"The PLZT films highly textured in (110) orientation have been successfully grown on SrTiO/sub 3/-buffered silicon substrates. The films deposited by pulsed laser deposition are assumed to be formed via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of the amorphous to perovskite phase transformation. Thereby, the loss of Pb-species in the films is thus suppressed. The optimum dielectric constants obtained are around /sub /spl epsi/r/=490 for PLZT/STO/Si films deposited at 550/spl deg/C (1 mbar Po/sub 2/) and post-annealed at 550/spl deg/C (1 atm Po/sub 2/). Furthermore, the corresponding charge storage density is around Q/sub c//spl ap/1.5 /spl mu/c/cm/sup 2/, at 50 KV/cm applied field strength.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"13 1","pages":"491-494"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86965936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522364
T. Shiosaki, M. Shimizu
The properties of Pb(Zr,Ti)O/sub 3/ (PZT) thin films grown by MOCVD using a variety of source materials were compared and discussed. In the growth of the PZT thin films, three different Pb precursors were used -Pb(C/sub 2/H/sub 5/)/sub 4/, Pb(DPM)/sub 2/ and (C/sub 2/H/sub 5/)/sub 3/PbOCH/sub 2/C(CH/sub 3/)/sub 3/. Ti(O-i-C/sub 3/H/sub 7/)/sub 4/ and Zr(O-t-C/sub 4/H/sub 9/)/sub 4/ were also used as the Ti and Zr precursors. The oxidizing gases used were O/sub 2/, NO/sub 2/, and O/sub 2/ containing O/sub 3/. When using three different Pb precursors, it was found that there was a difference in the growth temperature required to obtain perovskite PZT films. It seemed that differences in the electrical properties observed may be due to differences in the orientation, crystallinity, film composition and film thickness. When O/sub 2/ containing O/sub 3/ was used, an improvement in breakdown voltage was observed.
{"title":"Comparison of the properties of Pb(ZrTi)O/sub 3/ thin films obtained by MOCVD using different source materials","authors":"T. Shiosaki, M. Shimizu","doi":"10.1109/ISAF.1994.522364","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522364","url":null,"abstract":"The properties of Pb(Zr,Ti)O/sub 3/ (PZT) thin films grown by MOCVD using a variety of source materials were compared and discussed. In the growth of the PZT thin films, three different Pb precursors were used -Pb(C/sub 2/H/sub 5/)/sub 4/, Pb(DPM)/sub 2/ and (C/sub 2/H/sub 5/)/sub 3/PbOCH/sub 2/C(CH/sub 3/)/sub 3/. Ti(O-i-C/sub 3/H/sub 7/)/sub 4/ and Zr(O-t-C/sub 4/H/sub 9/)/sub 4/ were also used as the Ti and Zr precursors. The oxidizing gases used were O/sub 2/, NO/sub 2/, and O/sub 2/ containing O/sub 3/. When using three different Pb precursors, it was found that there was a difference in the growth temperature required to obtain perovskite PZT films. It seemed that differences in the electrical properties observed may be due to differences in the orientation, crystallinity, film composition and film thickness. When O/sub 2/ containing O/sub 3/ was used, an improvement in breakdown voltage was observed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"52 1","pages":"303-308"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90945005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522286
A. Bell
The effects of grain size on the dielectric properties of barium titanate ceramics are reviewed from a historical perspective. The problem has been studied for 40 years, and great insight concerning the characteristics of fine grained materials has been gained. Nevertheless, the story has still to reach a satisfactory conclusion.
{"title":"Grain size effects in barium titanate-revisited","authors":"A. Bell","doi":"10.1109/ISAF.1994.522286","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522286","url":null,"abstract":"The effects of grain size on the dielectric properties of barium titanate ceramics are reviewed from a historical perspective. The problem has been studied for 40 years, and great insight concerning the characteristics of fine grained materials has been gained. Nevertheless, the story has still to reach a satisfactory conclusion.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"31 1","pages":"14-17"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89745959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522356
B. Jin, N. Bhalla, I. Kim, B. C. Park
MgO-doped congruent LiNbO/sub 3/ were grown by the Czochralski method. All MgO-doped LiNbO/sub 3/ crystals have a higher growing temperature than that of pure crystals. The frequency dependent dielectric spectra was measured to study the relaxational and conduction mechanism. Strong low frequency dispersion indicated that the main conduction mechanism of MgO-doped LiNbO/sub 3/ is by charge carrier hopping which may be caused by defects or Mg-ions. Impedance spectra measurement show that this system does not satisfy a Debye law but Jonscher's "universal law".
{"title":"Frequency response of MgO:LiNbO/sub 3/ crystals","authors":"B. Jin, N. Bhalla, I. Kim, B. C. Park","doi":"10.1109/ISAF.1994.522356","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522356","url":null,"abstract":"MgO-doped congruent LiNbO/sub 3/ were grown by the Czochralski method. All MgO-doped LiNbO/sub 3/ crystals have a higher growing temperature than that of pure crystals. The frequency dependent dielectric spectra was measured to study the relaxational and conduction mechanism. Strong low frequency dispersion indicated that the main conduction mechanism of MgO-doped LiNbO/sub 3/ is by charge carrier hopping which may be caused by defects or Mg-ions. Impedance spectra measurement show that this system does not satisfy a Debye law but Jonscher's \"universal law\".","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"106 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88043964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522471
P. Bloomfield, F. Castro, R. M. Goeller
We have developed a 64 element linear array of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. The ferroelectric polymer film sensor deposited and polarized on the extended gate of the MOSFET results in a hybrid circuit, the pyroelectric-oxide-semiconductor field effect transistor (POSFET). The fabrication of the wafers included the design of the various masks required to produce the layers which made up the transistor array: stopper layer, active layer, poly-silicon layer, contacts layer, and bottom electrode layer. A thin film of the ferroelectric copolymer P(VDF/TrFE) was spin coated onto the wafer. Patterned gold electrodes were sputtered as the top electrode layer. The ferroelectric copolymer was hysteresis poled in situ. Tests performed included the array's response to a CO/sub 2/ laser operating in the CW and single pulse modes at 10.6 /spl mu/m. We present details of the design, processing, and testing of the fabricated devices.
{"title":"The design, processing, evaluation and characterization of pyroelectric PVDF copolymer/silicon MOSFET detector arrays","authors":"P. Bloomfield, F. Castro, R. M. Goeller","doi":"10.1109/ISAF.1994.522471","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522471","url":null,"abstract":"We have developed a 64 element linear array of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. The ferroelectric polymer film sensor deposited and polarized on the extended gate of the MOSFET results in a hybrid circuit, the pyroelectric-oxide-semiconductor field effect transistor (POSFET). The fabrication of the wafers included the design of the various masks required to produce the layers which made up the transistor array: stopper layer, active layer, poly-silicon layer, contacts layer, and bottom electrode layer. A thin film of the ferroelectric copolymer P(VDF/TrFE) was spin coated onto the wafer. Patterned gold electrodes were sputtered as the top electrode layer. The ferroelectric copolymer was hysteresis poled in situ. Tests performed included the array's response to a CO/sub 2/ laser operating in the CW and single pulse modes at 10.6 /spl mu/m. We present details of the design, processing, and testing of the fabricated devices.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"23 1","pages":"725-728"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88124497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522494
Zhao Qingchun, L. Chunliang, L. Hongling, Zhang Liangying, Y. Xi
Preparation of silica glasses doped with CdS and ZnS microcrystals is presented. The optical absorption spectra and the photoluminescence spectra show that the optical absorption edges and the photoluminescence peaks shift to the higher energy side with decreasing the size of the microcrystals, which exhibit the quantum size effect. The third order optical susceptibilities are measured by degenerate four wave mixing (DFWM) method. The third order optical nonlinearity of the nanocomposites prepared by the sol-gel process is largely enhanced.
{"title":"Quantum size effects and nonlinear optical properties of ZnS and CdS semiconductor-doped silica glasses prepared by sol-gel process","authors":"Zhao Qingchun, L. Chunliang, L. Hongling, Zhang Liangying, Y. Xi","doi":"10.1109/ISAF.1994.522494","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522494","url":null,"abstract":"Preparation of silica glasses doped with CdS and ZnS microcrystals is presented. The optical absorption spectra and the photoluminescence spectra show that the optical absorption edges and the photoluminescence peaks shift to the higher energy side with decreasing the size of the microcrystals, which exhibit the quantum size effect. The third order optical susceptibilities are measured by degenerate four wave mixing (DFWM) method. The third order optical nonlinearity of the nanocomposites prepared by the sol-gel process is largely enhanced.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"29 1","pages":"797-800"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87004407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522467
S. Blochwitz, R. Habel, M. Diestelhorst, H. Beige
The aim of the presented paper is to show that the application of analysis methods of dissipative chaotic systems is a useful tool for the study of structural phase transitions and the large signal behaviour of ferroelectric materials. The series resonance circuit with a ferroelectric capacitor is a practical realization of a nonlinear dynamical system which exhibits period-doubling behaviour and chaos if the amplitude and the frequency of the driving voltage have suitable values. The response function of the nonlinear dynamical system is used for the determination of the nonlinear coefficients of the sample.
{"title":"Nonlinear dynamics and ferroelectric materials","authors":"S. Blochwitz, R. Habel, M. Diestelhorst, H. Beige","doi":"10.1109/ISAF.1994.522467","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522467","url":null,"abstract":"The aim of the presented paper is to show that the application of analysis methods of dissipative chaotic systems is a useful tool for the study of structural phase transitions and the large signal behaviour of ferroelectric materials. The series resonance circuit with a ferroelectric capacitor is a practical realization of a nonlinear dynamical system which exhibits period-doubling behaviour and chaos if the amplitude and the frequency of the driving voltage have suitable values. The response function of the nonlinear dynamical system is used for the determination of the nonlinear coefficients of the sample.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"37 1","pages":"709-712"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87016188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522451
F. Yu, A. Bhalla, S. Yin, F. Zhao, Z. Wu, D. Salerno
A specially doped photorefractive (PR) crystal Ce:Fe:LiNbO/sub 3/, and the effect due to Ce and Fe dopants are reported. We have found that the double-doped crystal exhibits higher PR sensitivity, larger dynamic range, broader spectral bandwidth, and lower scattering noise. It is about 10-times higher in PR sensitivity in the red light region (633 nm), as compared with the reported data. We have also discovered anomalous enhancement of PR effects which occur at 57/spl deg/C, 70/spl deg/C and 110/spl deg/C. The anomalies are primarily due to possible structural phase-transitions of the crystal at these temperatures. Several applications of this specially doped PR (Ce:Fe:LiNbO/sub 3/) crystal (both bulk and fiber) are also provided.
{"title":"Ce:Fe:LiNbO/sub 3/ photorefractive crystal: material properties and applications","authors":"F. Yu, A. Bhalla, S. Yin, F. Zhao, Z. Wu, D. Salerno","doi":"10.1109/ISAF.1994.522451","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522451","url":null,"abstract":"A specially doped photorefractive (PR) crystal Ce:Fe:LiNbO/sub 3/, and the effect due to Ce and Fe dopants are reported. We have found that the double-doped crystal exhibits higher PR sensitivity, larger dynamic range, broader spectral bandwidth, and lower scattering noise. It is about 10-times higher in PR sensitivity in the red light region (633 nm), as compared with the reported data. We have also discovered anomalous enhancement of PR effects which occur at 57/spl deg/C, 70/spl deg/C and 110/spl deg/C. The anomalies are primarily due to possible structural phase-transitions of the crystal at these temperatures. Several applications of this specially doped PR (Ce:Fe:LiNbO/sub 3/) crystal (both bulk and fiber) are also provided.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"51 1","pages":"636-641"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87132482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522448
T. Takada, Sea-Fue Wang, S. Yoshikawa, S. Jang, R. Newnham
The microwave dielectric properties and the sintering behavior of commercial BaO-TiO/sub 2/-WO/sub 3/ dielectrics, N-35, with addition of various glasses; (1) simple glass formers, (2) ZnO-B/sub 2/O/sub 3/ based, (3) B/sub 2/O/sub 3/-SiO/sub 2/ based and (4) Al/sub 2/O/sub 3/-SiO/sub 2/ based glasses were studied. The Q of N-35 sintered with a ZnO-B/sub 2/O/sub 3/ glass system showed a sudden drop in the sintering temperature to around 1000/spl deg/C. Results of XRD, thermal analysis and scanning electron microscopy suggest that the chemical reaction between N-35 and the glass had a larger effect on Q than density. A 5wt% addition of B/sub 2/O/sub 3/ to N-35, when sintered at 1200/spl deg/C, had the best dielectric properties, Q=8300 and K=34.1 at 8.5 GHz, among the glasses Q, K and density increased with sintering temperature from 1000 to 1200/spl deg/C. The effects of the amount of glass added and the mixing method on the density and the dielectric properties will be discussed.
{"title":"Microwave dielectric properties of BaO-TiO/sub 2/-WO/sub 3/ ceramics sintered with glasses","authors":"T. Takada, Sea-Fue Wang, S. Yoshikawa, S. Jang, R. Newnham","doi":"10.1109/ISAF.1994.522448","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522448","url":null,"abstract":"The microwave dielectric properties and the sintering behavior of commercial BaO-TiO/sub 2/-WO/sub 3/ dielectrics, N-35, with addition of various glasses; (1) simple glass formers, (2) ZnO-B/sub 2/O/sub 3/ based, (3) B/sub 2/O/sub 3/-SiO/sub 2/ based and (4) Al/sub 2/O/sub 3/-SiO/sub 2/ based glasses were studied. The Q of N-35 sintered with a ZnO-B/sub 2/O/sub 3/ glass system showed a sudden drop in the sintering temperature to around 1000/spl deg/C. Results of XRD, thermal analysis and scanning electron microscopy suggest that the chemical reaction between N-35 and the glass had a larger effect on Q than density. A 5wt% addition of B/sub 2/O/sub 3/ to N-35, when sintered at 1200/spl deg/C, had the best dielectric properties, Q=8300 and K=34.1 at 8.5 GHz, among the glasses Q, K and density increased with sintering temperature from 1000 to 1200/spl deg/C. The effects of the amount of glass added and the mixing method on the density and the dielectric properties will be discussed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"25 1","pages":"626-629"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82978142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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