Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522315
P. Fuierer, A. Nichtawitz
An electric field applied across a specimen during the forging process is expected to affect the kinetics of grain growth and orientation. In addition, just as a field can align molecules in a nematic liquid with the axis of greatest polarizability in the direction of the applied field, it is possible that the polar axis in a crystallite may also be aligned during the high temperature densification process. This may improve the electric or piezoelectric properties of certain low symmetry ferroelectric materials. The idea is to combine crystallographic alignment, densification and poling all into one step, and approach single crystal-like properties in a polycrystalline ceramic. Electric fields (both DC and AC) were applied transverse to the forging direction of the low symmetry ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/. The AC field was found to have little influence on crystallographic orientation. The DC field was found to have a profound effect; aligning the polar axis during forging, and yielding further anisotropy in the ferroelectric hysteresis.
{"title":"Electric field assisted hot forging of bismuth titanate","authors":"P. Fuierer, A. Nichtawitz","doi":"10.1109/ISAF.1994.522315","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522315","url":null,"abstract":"An electric field applied across a specimen during the forging process is expected to affect the kinetics of grain growth and orientation. In addition, just as a field can align molecules in a nematic liquid with the axis of greatest polarizability in the direction of the applied field, it is possible that the polar axis in a crystallite may also be aligned during the high temperature densification process. This may improve the electric or piezoelectric properties of certain low symmetry ferroelectric materials. The idea is to combine crystallographic alignment, densification and poling all into one step, and approach single crystal-like properties in a polycrystalline ceramic. Electric fields (both DC and AC) were applied transverse to the forging direction of the low symmetry ferroelectric Bi/sub 4/Ti/sub 3/O/sub 12/. The AC field was found to have little influence on crystallographic orientation. The DC field was found to have a profound effect; aligning the polar axis during forging, and yielding further anisotropy in the ferroelectric hysteresis.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"55 1","pages":"126-129"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91477920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522411
I. Lin, Kuo-Shung Liu, S. Tu, Sheng‐Jenn Yang
The PLZT films highly textured in (110) orientation have been successfully grown on SrTiO/sub 3/-buffered silicon substrates. The films deposited by pulsed laser deposition are assumed to be formed via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of the amorphous to perovskite phase transformation. Thereby, the loss of Pb-species in the films is thus suppressed. The optimum dielectric constants obtained are around /sub /spl epsi/r/=490 for PLZT/STO/Si films deposited at 550/spl deg/C (1 mbar Po/sub 2/) and post-annealed at 550/spl deg/C (1 atm Po/sub 2/). Furthermore, the corresponding charge storage density is around Q/sub c//spl ap/1.5 /spl mu/c/cm/sup 2/, at 50 KV/cm applied field strength.
{"title":"The growth behavior of Pb-containing perovskite thin films using pulsed laser deposition technique","authors":"I. Lin, Kuo-Shung Liu, S. Tu, Sheng‐Jenn Yang","doi":"10.1109/ISAF.1994.522411","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522411","url":null,"abstract":"The PLZT films highly textured in (110) orientation have been successfully grown on SrTiO/sub 3/-buffered silicon substrates. The films deposited by pulsed laser deposition are assumed to be formed via a two-step process, i.e., cluster adherence and phase transformation. The beneficial effect of using STO as buffer layers involves enhancing the kinetics of the amorphous to perovskite phase transformation. Thereby, the loss of Pb-species in the films is thus suppressed. The optimum dielectric constants obtained are around /sub /spl epsi/r/=490 for PLZT/STO/Si films deposited at 550/spl deg/C (1 mbar Po/sub 2/) and post-annealed at 550/spl deg/C (1 atm Po/sub 2/). Furthermore, the corresponding charge storage density is around Q/sub c//spl ap/1.5 /spl mu/c/cm/sup 2/, at 50 KV/cm applied field strength.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"13 1","pages":"491-494"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86965936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522364
T. Shiosaki, M. Shimizu
The properties of Pb(Zr,Ti)O/sub 3/ (PZT) thin films grown by MOCVD using a variety of source materials were compared and discussed. In the growth of the PZT thin films, three different Pb precursors were used -Pb(C/sub 2/H/sub 5/)/sub 4/, Pb(DPM)/sub 2/ and (C/sub 2/H/sub 5/)/sub 3/PbOCH/sub 2/C(CH/sub 3/)/sub 3/. Ti(O-i-C/sub 3/H/sub 7/)/sub 4/ and Zr(O-t-C/sub 4/H/sub 9/)/sub 4/ were also used as the Ti and Zr precursors. The oxidizing gases used were O/sub 2/, NO/sub 2/, and O/sub 2/ containing O/sub 3/. When using three different Pb precursors, it was found that there was a difference in the growth temperature required to obtain perovskite PZT films. It seemed that differences in the electrical properties observed may be due to differences in the orientation, crystallinity, film composition and film thickness. When O/sub 2/ containing O/sub 3/ was used, an improvement in breakdown voltage was observed.
{"title":"Comparison of the properties of Pb(ZrTi)O/sub 3/ thin films obtained by MOCVD using different source materials","authors":"T. Shiosaki, M. Shimizu","doi":"10.1109/ISAF.1994.522364","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522364","url":null,"abstract":"The properties of Pb(Zr,Ti)O/sub 3/ (PZT) thin films grown by MOCVD using a variety of source materials were compared and discussed. In the growth of the PZT thin films, three different Pb precursors were used -Pb(C/sub 2/H/sub 5/)/sub 4/, Pb(DPM)/sub 2/ and (C/sub 2/H/sub 5/)/sub 3/PbOCH/sub 2/C(CH/sub 3/)/sub 3/. Ti(O-i-C/sub 3/H/sub 7/)/sub 4/ and Zr(O-t-C/sub 4/H/sub 9/)/sub 4/ were also used as the Ti and Zr precursors. The oxidizing gases used were O/sub 2/, NO/sub 2/, and O/sub 2/ containing O/sub 3/. When using three different Pb precursors, it was found that there was a difference in the growth temperature required to obtain perovskite PZT films. It seemed that differences in the electrical properties observed may be due to differences in the orientation, crystallinity, film composition and film thickness. When O/sub 2/ containing O/sub 3/ was used, an improvement in breakdown voltage was observed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"52 1","pages":"303-308"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90945005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522330
A. Dantsiger, O.N. Razumovskaja, L.A. Reznitchenko, L. D. Grineva, S. Dudkina, S.V. Gavrilyatchenko, N.V. Bergunova
The piezoceramic materials, possessing a wide variety of properties, have been designed. They may be used effectively in the various fields of science and technology.
已设计出具有多种性能的压电陶瓷材料。它们可以有效地应用于科学技术的各个领域。
{"title":"High-efficiency ferro-piezoceramic PCR-type materials for various applications","authors":"A. Dantsiger, O.N. Razumovskaja, L.A. Reznitchenko, L. D. Grineva, S. Dudkina, S.V. Gavrilyatchenko, N.V. Bergunova","doi":"10.1109/ISAF.1994.522330","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522330","url":null,"abstract":"The piezoceramic materials, possessing a wide variety of properties, have been designed. They may be used effectively in the various fields of science and technology.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"28 7","pages":"175-177"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72562982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522413
L. A. Sapozhnikov, I. Sem, I. Zakharchenko, E. Sviridov, V. Alyoshin, V. Dudkevich
The Pb(Zr,Ti,W,Cd)O/sub 3/ (PZT) films were deposited by rf-sputtering of stoichiometric targets in an oxygen atmosphere. Epitaxial films had a tetragonal unit cell at room temperature. The unit cell parameter vs temperature curve showed a kink at phase transition temperature characteristic of the bulk material. Polycrystalline films had a pseudocubic unit cell. In spite of the presence of a full set of ferroelectric properties no anomalies in the temperature dependence of the unit cell parameter at phase transition were observed. The only evidence of the presence of the structural phase transition to a cubic phase was the essential decrease of intensity of X-ray reflections with an odd sum of indices as in the epitaxial films. These reflection intensities are most sensitive to the displacement of Zr and Ti cations with respect to Pb on approaching the Curie point temperature.
{"title":"The structural phase transition in PZT ferroelectric films","authors":"L. A. Sapozhnikov, I. Sem, I. Zakharchenko, E. Sviridov, V. Alyoshin, V. Dudkevich","doi":"10.1109/ISAF.1994.522413","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522413","url":null,"abstract":"The Pb(Zr,Ti,W,Cd)O/sub 3/ (PZT) films were deposited by rf-sputtering of stoichiometric targets in an oxygen atmosphere. Epitaxial films had a tetragonal unit cell at room temperature. The unit cell parameter vs temperature curve showed a kink at phase transition temperature characteristic of the bulk material. Polycrystalline films had a pseudocubic unit cell. In spite of the presence of a full set of ferroelectric properties no anomalies in the temperature dependence of the unit cell parameter at phase transition were observed. The only evidence of the presence of the structural phase transition to a cubic phase was the essential decrease of intensity of X-ray reflections with an odd sum of indices as in the epitaxial films. These reflection intensities are most sensitive to the displacement of Zr and Ti cations with respect to Pb on approaching the Curie point temperature.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"15 1","pages":"499-501"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75068906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522436
Y.D. Kim, S. M. Landin, I. Cornejo, M. J. Haun
Commercial ferroelectric thick films have been developed with high dielectric constants for capacitor applications. However, these compositions typically do not densify well in thick film form at characteristic firing temperatures (850/spl sim/900/spl deg/C), and thus require encapsulants to provide environmental stability. In this paper, ferroelectric compositions that can be fired at low temperatures with useful dielectric properties for thick film application are presented based on the combination of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN)-PbTiO/sub 3/ (PT) with Pb/sub 5/Ge/sub 2/SiO/sub 11/ (PGS). The PGS melts at /spl ap/724/spl deg/C, and causes liquid phase sintering of the PMN-PT at low temperatures. Thick film samples of PMN-PT with 30 weight percent PGS and 5 weight percent PbO additions densify to closed porosity fired at 850/spl deg/C for 10 minutes with a room temperature 1 KHz dielectric constant greater than 1500 and a dissipation factor less than 6%. Preliminary results indicate that these compositions are compatible with a commercial silver thick film conductor paste (DuPont 6160).
{"title":"Low-firing Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/-Pb/sub 5/Ge/sub 2/SiO/sub 11/ compositions for thick film capacitor applications","authors":"Y.D. Kim, S. M. Landin, I. Cornejo, M. J. Haun","doi":"10.1109/ISAF.1994.522436","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522436","url":null,"abstract":"Commercial ferroelectric thick films have been developed with high dielectric constants for capacitor applications. However, these compositions typically do not densify well in thick film form at characteristic firing temperatures (850/spl sim/900/spl deg/C), and thus require encapsulants to provide environmental stability. In this paper, ferroelectric compositions that can be fired at low temperatures with useful dielectric properties for thick film application are presented based on the combination of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN)-PbTiO/sub 3/ (PT) with Pb/sub 5/Ge/sub 2/SiO/sub 11/ (PGS). The PGS melts at /spl ap/724/spl deg/C, and causes liquid phase sintering of the PMN-PT at low temperatures. Thick film samples of PMN-PT with 30 weight percent PGS and 5 weight percent PbO additions densify to closed porosity fired at 850/spl deg/C for 10 minutes with a room temperature 1 KHz dielectric constant greater than 1500 and a dissipation factor less than 6%. Preliminary results indicate that these compositions are compatible with a commercial silver thick film conductor paste (DuPont 6160).","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"5 1","pages":"585-588"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76403879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522481
M. Kuwabara, E. Matsuyama, S. Takahashi, H. Shimooka, Y. Urakawa
Undoped barium titanate ceramics exhibiting a distinct positive temperature coefficient of resistivity (PTCR) effect have been produced by sintering high-purity barium titanate powder compacts in the temperature range 1300-1400/spl deg/C in air. The formation of core-shell type duplex microstructures in the materials covered with a nearly full dense layer is responsible for this phenomenon, where undoped barium titanate ceramics (which are normally insulating) were converted to semiconductors and, moreover, exhibited distinct PTCR effects. The core-shell grain structure is described as a duplex microstructure consisting of a large-grained (/spl ap/50 /spl mu/m) semiconducting phase inside and a small-grained (<10 /spl mu/m) insulating phase outside.
{"title":"PTCR characteristics in undoped barium titanate ceramics with core-shell type duplex microstructures","authors":"M. Kuwabara, E. Matsuyama, S. Takahashi, H. Shimooka, Y. Urakawa","doi":"10.1109/ISAF.1994.522481","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522481","url":null,"abstract":"Undoped barium titanate ceramics exhibiting a distinct positive temperature coefficient of resistivity (PTCR) effect have been produced by sintering high-purity barium titanate powder compacts in the temperature range 1300-1400/spl deg/C in air. The formation of core-shell type duplex microstructures in the materials covered with a nearly full dense layer is responsible for this phenomenon, where undoped barium titanate ceramics (which are normally insulating) were converted to semiconductors and, moreover, exhibited distinct PTCR effects. The core-shell grain structure is described as a duplex microstructure consisting of a large-grained (/spl ap/50 /spl mu/m) semiconducting phase inside and a small-grained (<10 /spl mu/m) insulating phase outside.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"9 1","pages":"758-759"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76580202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522378
J. Fielding, S. Jang, T. Shrout
Several electrostrictive materials were investigated as candidates for high frequency transducer applications. Families investigated included (1-x)Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-(x)PbTiO/sub 3/ and PLZT relaxors, and Srand Sn-substituted BaTiO/sub 3/ normal ferroelectrics. The field dependent dielectric, piezoelectric and elastic properties were characterized at frequencies between 100 kHz and 5 MHz. The large magnitude and E-field tunability of the electromechanical and elastic properties observed in several of the materials may present opportunities for several new transducer applications, such as biomedical imaging and non-destructive evaluation.
{"title":"Field-induced piezoelectric materials for 100 kHz-10 MHz transducer applications","authors":"J. Fielding, S. Jang, T. Shrout","doi":"10.1109/ISAF.1994.522378","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522378","url":null,"abstract":"Several electrostrictive materials were investigated as candidates for high frequency transducer applications. Families investigated included (1-x)Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-(x)PbTiO/sub 3/ and PLZT relaxors, and Srand Sn-substituted BaTiO/sub 3/ normal ferroelectrics. The field dependent dielectric, piezoelectric and elastic properties were characterized at frequencies between 100 kHz and 5 MHz. The large magnitude and E-field tunability of the electromechanical and elastic properties observed in several of the materials may present opportunities for several new transducer applications, such as biomedical imaging and non-destructive evaluation.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"87 1","pages":"363-366"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78151841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522462
A. Bell, Y. Huang, M. Kohli, O. Paul, P. Ryser, M. Forster
Due to its high pyroelectric coefficient, low permittivity and relatively low piezoelectric coefficients, lead titanate is an important candidate for use in pyroelectric detectors. Sol-gel processing of lead titanate thin films, in combination with micro-machining of silicon substrates, is being used for the development of low-cost infra-red detectors with properties equivalent to existing "bulk" or single crystal devices. Here we report on some aspects of the sol-gel chemistry, the optimisation of the pyroelectric figure of merit and the fabrication and characterisation of an infra-red detector, consisting of two pyroelectric elements on a micro-machined SiO/sub 2/-Si/sub 3/N/sub 4/ membrane.
{"title":"PbTiO/sub 3/ thin films for pyroelectric detection","authors":"A. Bell, Y. Huang, M. Kohli, O. Paul, P. Ryser, M. Forster","doi":"10.1109/ISAF.1994.522462","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522462","url":null,"abstract":"Due to its high pyroelectric coefficient, low permittivity and relatively low piezoelectric coefficients, lead titanate is an important candidate for use in pyroelectric detectors. Sol-gel processing of lead titanate thin films, in combination with micro-machining of silicon substrates, is being used for the development of low-cost infra-red detectors with properties equivalent to existing \"bulk\" or single crystal devices. Here we report on some aspects of the sol-gel chemistry, the optimisation of the pyroelectric figure of merit and the fabrication and characterisation of an infra-red detector, consisting of two pyroelectric elements on a micro-machined SiO/sub 2/-Si/sub 3/N/sub 4/ membrane.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"34 1","pages":"691-694"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74494516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522440
M. R. Cockburn, D. Hall, C. Millar
Studies on the hot isostatic pressing (HIPing) of Sm, Mn-doped lead titanate ceramics in an argon/oxygen atmosphere have shown that the HIPed materials exhibit a substantially lower dielectric loss than conventionally sintered materials (tan /spl delta/ being reduced from approximately 0.02 to 0.01 at 1 kHz). The present work was carried out in order to identify the processing variables which are most important in effecting this reduction in loss. The materials were prepared by conventional solid state reaction and subjected to a variety of HIPing and annealing conditions. A mechanism involving the re-distribution of Mn ions among the Pb and Ti sites during HIPing is proposed to account for the observed changes in dielectric loss, which show a strong correlation with changes in the electrical conductivity.
{"title":"The effect of high temperature HIPing and annealing on the dielectric properties of modified lead titanate ceramics","authors":"M. R. Cockburn, D. Hall, C. Millar","doi":"10.1109/ISAF.1994.522440","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522440","url":null,"abstract":"Studies on the hot isostatic pressing (HIPing) of Sm, Mn-doped lead titanate ceramics in an argon/oxygen atmosphere have shown that the HIPed materials exhibit a substantially lower dielectric loss than conventionally sintered materials (tan /spl delta/ being reduced from approximately 0.02 to 0.01 at 1 kHz). The present work was carried out in order to identify the processing variables which are most important in effecting this reduction in loss. The materials were prepared by conventional solid state reaction and subjected to a variety of HIPing and annealing conditions. A mechanism involving the re-distribution of Mn ions among the Pb and Ti sites during HIPing is proposed to account for the observed changes in dielectric loss, which show a strong correlation with changes in the electrical conductivity.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"101 1","pages":"597-600"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82754317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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