Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522494
Zhao Qingchun, L. Chunliang, L. Hongling, Zhang Liangying, Y. Xi
Preparation of silica glasses doped with CdS and ZnS microcrystals is presented. The optical absorption spectra and the photoluminescence spectra show that the optical absorption edges and the photoluminescence peaks shift to the higher energy side with decreasing the size of the microcrystals, which exhibit the quantum size effect. The third order optical susceptibilities are measured by degenerate four wave mixing (DFWM) method. The third order optical nonlinearity of the nanocomposites prepared by the sol-gel process is largely enhanced.
{"title":"Quantum size effects and nonlinear optical properties of ZnS and CdS semiconductor-doped silica glasses prepared by sol-gel process","authors":"Zhao Qingchun, L. Chunliang, L. Hongling, Zhang Liangying, Y. Xi","doi":"10.1109/ISAF.1994.522494","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522494","url":null,"abstract":"Preparation of silica glasses doped with CdS and ZnS microcrystals is presented. The optical absorption spectra and the photoluminescence spectra show that the optical absorption edges and the photoluminescence peaks shift to the higher energy side with decreasing the size of the microcrystals, which exhibit the quantum size effect. The third order optical susceptibilities are measured by degenerate four wave mixing (DFWM) method. The third order optical nonlinearity of the nanocomposites prepared by the sol-gel process is largely enhanced.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"29 1","pages":"797-800"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87004407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522467
S. Blochwitz, R. Habel, M. Diestelhorst, H. Beige
The aim of the presented paper is to show that the application of analysis methods of dissipative chaotic systems is a useful tool for the study of structural phase transitions and the large signal behaviour of ferroelectric materials. The series resonance circuit with a ferroelectric capacitor is a practical realization of a nonlinear dynamical system which exhibits period-doubling behaviour and chaos if the amplitude and the frequency of the driving voltage have suitable values. The response function of the nonlinear dynamical system is used for the determination of the nonlinear coefficients of the sample.
{"title":"Nonlinear dynamics and ferroelectric materials","authors":"S. Blochwitz, R. Habel, M. Diestelhorst, H. Beige","doi":"10.1109/ISAF.1994.522467","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522467","url":null,"abstract":"The aim of the presented paper is to show that the application of analysis methods of dissipative chaotic systems is a useful tool for the study of structural phase transitions and the large signal behaviour of ferroelectric materials. The series resonance circuit with a ferroelectric capacitor is a practical realization of a nonlinear dynamical system which exhibits period-doubling behaviour and chaos if the amplitude and the frequency of the driving voltage have suitable values. The response function of the nonlinear dynamical system is used for the determination of the nonlinear coefficients of the sample.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"37 1","pages":"709-712"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87016188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522356
B. Jin, N. Bhalla, I. Kim, B. C. Park
MgO-doped congruent LiNbO/sub 3/ were grown by the Czochralski method. All MgO-doped LiNbO/sub 3/ crystals have a higher growing temperature than that of pure crystals. The frequency dependent dielectric spectra was measured to study the relaxational and conduction mechanism. Strong low frequency dispersion indicated that the main conduction mechanism of MgO-doped LiNbO/sub 3/ is by charge carrier hopping which may be caused by defects or Mg-ions. Impedance spectra measurement show that this system does not satisfy a Debye law but Jonscher's "universal law".
{"title":"Frequency response of MgO:LiNbO/sub 3/ crystals","authors":"B. Jin, N. Bhalla, I. Kim, B. C. Park","doi":"10.1109/ISAF.1994.522356","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522356","url":null,"abstract":"MgO-doped congruent LiNbO/sub 3/ were grown by the Czochralski method. All MgO-doped LiNbO/sub 3/ crystals have a higher growing temperature than that of pure crystals. The frequency dependent dielectric spectra was measured to study the relaxational and conduction mechanism. Strong low frequency dispersion indicated that the main conduction mechanism of MgO-doped LiNbO/sub 3/ is by charge carrier hopping which may be caused by defects or Mg-ions. Impedance spectra measurement show that this system does not satisfy a Debye law but Jonscher's \"universal law\".","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"106 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88043964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522433
M. Huh, K. Cho, H. Nam, H. Lee
Electrical degradation of calcium-containing MLCCs having nickel internal electrode was studied using a highly accelerated life test set-up. Both extrinsic and intrinsic failures were identified in commercial MLCCs. From the estimated values of degradation parameters such as voltage exponent factor and pseudo-activation energy, it was found that the intrinsic failure took place by thermal runaway. Although, the degradation pattern for nickel electrode MLCCs was similar to that for common palladium electrode MLCCs, the maximum rated lifetime of the former was in the range of 5 to 30 years and was, in general, shorter than that of the latter. This difference was ascribed to the difference in oxygen vacancy concentrations. Thus, possible degradation mechanisms should be related to oxygen vacancy movement. Among them are reduction model, grain boundary barrier model and de-mixing model.
{"title":"Degradation behavior of Ca-doped barium titanate ceramic capacitors","authors":"M. Huh, K. Cho, H. Nam, H. Lee","doi":"10.1109/ISAF.1994.522433","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522433","url":null,"abstract":"Electrical degradation of calcium-containing MLCCs having nickel internal electrode was studied using a highly accelerated life test set-up. Both extrinsic and intrinsic failures were identified in commercial MLCCs. From the estimated values of degradation parameters such as voltage exponent factor and pseudo-activation energy, it was found that the intrinsic failure took place by thermal runaway. Although, the degradation pattern for nickel electrode MLCCs was similar to that for common palladium electrode MLCCs, the maximum rated lifetime of the former was in the range of 5 to 30 years and was, in general, shorter than that of the latter. This difference was ascribed to the difference in oxygen vacancy concentrations. Thus, possible degradation mechanisms should be related to oxygen vacancy movement. Among them are reduction model, grain boundary barrier model and de-mixing model.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"62 1","pages":"572-576"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90264333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522448
T. Takada, Sea-Fue Wang, S. Yoshikawa, S. Jang, R. Newnham
The microwave dielectric properties and the sintering behavior of commercial BaO-TiO/sub 2/-WO/sub 3/ dielectrics, N-35, with addition of various glasses; (1) simple glass formers, (2) ZnO-B/sub 2/O/sub 3/ based, (3) B/sub 2/O/sub 3/-SiO/sub 2/ based and (4) Al/sub 2/O/sub 3/-SiO/sub 2/ based glasses were studied. The Q of N-35 sintered with a ZnO-B/sub 2/O/sub 3/ glass system showed a sudden drop in the sintering temperature to around 1000/spl deg/C. Results of XRD, thermal analysis and scanning electron microscopy suggest that the chemical reaction between N-35 and the glass had a larger effect on Q than density. A 5wt% addition of B/sub 2/O/sub 3/ to N-35, when sintered at 1200/spl deg/C, had the best dielectric properties, Q=8300 and K=34.1 at 8.5 GHz, among the glasses Q, K and density increased with sintering temperature from 1000 to 1200/spl deg/C. The effects of the amount of glass added and the mixing method on the density and the dielectric properties will be discussed.
{"title":"Microwave dielectric properties of BaO-TiO/sub 2/-WO/sub 3/ ceramics sintered with glasses","authors":"T. Takada, Sea-Fue Wang, S. Yoshikawa, S. Jang, R. Newnham","doi":"10.1109/ISAF.1994.522448","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522448","url":null,"abstract":"The microwave dielectric properties and the sintering behavior of commercial BaO-TiO/sub 2/-WO/sub 3/ dielectrics, N-35, with addition of various glasses; (1) simple glass formers, (2) ZnO-B/sub 2/O/sub 3/ based, (3) B/sub 2/O/sub 3/-SiO/sub 2/ based and (4) Al/sub 2/O/sub 3/-SiO/sub 2/ based glasses were studied. The Q of N-35 sintered with a ZnO-B/sub 2/O/sub 3/ glass system showed a sudden drop in the sintering temperature to around 1000/spl deg/C. Results of XRD, thermal analysis and scanning electron microscopy suggest that the chemical reaction between N-35 and the glass had a larger effect on Q than density. A 5wt% addition of B/sub 2/O/sub 3/ to N-35, when sintered at 1200/spl deg/C, had the best dielectric properties, Q=8300 and K=34.1 at 8.5 GHz, among the glasses Q, K and density increased with sintering temperature from 1000 to 1200/spl deg/C. The effects of the amount of glass added and the mixing method on the density and the dielectric properties will be discussed.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"25 1","pages":"626-629"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82978142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522342
K. Oh, K. Uchino, L. Cross
The Ba(Ti,Sn)O/sub 3/ ceramics are known as relaxor materials and they show very small hysteresis of field induced strains and field induced polarizations. An optical study was attempted to explain these dielectric properties. Domain structures and motions in Ba(Ti/sub 1-x/Sn/sub x/)O/sub 3/ (x=0, 0.05, 0.1, 0.13) ceramics were observed under an electric field at various temperatures using a high resolution CCD microscope system. Electrical properties such as field induced strains, dielectric properties and field induced polarization characteristics were also measured. The Ba(Ti/sub 1-x/ Sn/sub x/)O/sub 3/ ceramics showed a significant difference in domain structures and motions with changing composition. The domain structure became tiny and complex with increasing x. Changes of domain structures due to the phase transitions were also observed with varying temperature. The domain reorientation was easily induced with rising and falling electric field. The results of domain observations can explain the electrical properties well.
{"title":"Electric properties and domain structures in Ba(Ti,Sn)O/sub 3/ ceramics","authors":"K. Oh, K. Uchino, L. Cross","doi":"10.1109/ISAF.1994.522342","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522342","url":null,"abstract":"The Ba(Ti,Sn)O/sub 3/ ceramics are known as relaxor materials and they show very small hysteresis of field induced strains and field induced polarizations. An optical study was attempted to explain these dielectric properties. Domain structures and motions in Ba(Ti/sub 1-x/Sn/sub x/)O/sub 3/ (x=0, 0.05, 0.1, 0.13) ceramics were observed under an electric field at various temperatures using a high resolution CCD microscope system. Electrical properties such as field induced strains, dielectric properties and field induced polarization characteristics were also measured. The Ba(Ti/sub 1-x/ Sn/sub x/)O/sub 3/ ceramics showed a significant difference in domain structures and motions with changing composition. The domain structure became tiny and complex with increasing x. Changes of domain structures due to the phase transitions were also observed with varying temperature. The domain reorientation was easily induced with rising and falling electric field. The results of domain observations can explain the electrical properties well.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"15 1","pages":"218-221"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79342297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522471
P. Bloomfield, F. Castro, R. M. Goeller
We have developed a 64 element linear array of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. The ferroelectric polymer film sensor deposited and polarized on the extended gate of the MOSFET results in a hybrid circuit, the pyroelectric-oxide-semiconductor field effect transistor (POSFET). The fabrication of the wafers included the design of the various masks required to produce the layers which made up the transistor array: stopper layer, active layer, poly-silicon layer, contacts layer, and bottom electrode layer. A thin film of the ferroelectric copolymer P(VDF/TrFE) was spin coated onto the wafer. Patterned gold electrodes were sputtered as the top electrode layer. The ferroelectric copolymer was hysteresis poled in situ. Tests performed included the array's response to a CO/sub 2/ laser operating in the CW and single pulse modes at 10.6 /spl mu/m. We present details of the design, processing, and testing of the fabricated devices.
{"title":"The design, processing, evaluation and characterization of pyroelectric PVDF copolymer/silicon MOSFET detector arrays","authors":"P. Bloomfield, F. Castro, R. M. Goeller","doi":"10.1109/ISAF.1994.522471","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522471","url":null,"abstract":"We have developed a 64 element linear array of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. The ferroelectric polymer film sensor deposited and polarized on the extended gate of the MOSFET results in a hybrid circuit, the pyroelectric-oxide-semiconductor field effect transistor (POSFET). The fabrication of the wafers included the design of the various masks required to produce the layers which made up the transistor array: stopper layer, active layer, poly-silicon layer, contacts layer, and bottom electrode layer. A thin film of the ferroelectric copolymer P(VDF/TrFE) was spin coated onto the wafer. Patterned gold electrodes were sputtered as the top electrode layer. The ferroelectric copolymer was hysteresis poled in situ. Tests performed included the array's response to a CO/sub 2/ laser operating in the CW and single pulse modes at 10.6 /spl mu/m. We present details of the design, processing, and testing of the fabricated devices.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"23 1","pages":"725-728"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88124497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522461
J. Roeder, S. Bilodeau, P. Van Buskirk, V. Ozguz, J. Ma, S. Lee
PLZT films in the composition range 7/0/100-32/0/100 have been deposited by CVD from a single source reagent using a liquid delivery/flash vaporization approach. Single phase perovskite films ranging in thickness from 1-5 /spl mu/m were deposited on fused silica substrates at 535/spl deg/C. The films had very strong crystallographic texture with [100] normal to the plane of the film. Optical loss per unit thickness was lower for thicker films suggesting that interfacial effects dominated losses. Very large electro-optic effects were observed in a number of the films. Birefringent shifts were measured by phase retardation in transmission mode with an electric field applied in the plane of the film using interdigitated electrodes. Birefringent shift varied quadratically with applied field and showed little hysteresis with R coefficients as high as 5/spl times/10/sup -16/ (m/V)/sup 2/. The strength of the electro-optic effect is attributed to the high degree of crystallinity of the films and the a-axis orientation.
{"title":"Liquid delivery CVD of PLZT thick films for electro-optic applications","authors":"J. Roeder, S. Bilodeau, P. Van Buskirk, V. Ozguz, J. Ma, S. Lee","doi":"10.1109/ISAF.1994.522461","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522461","url":null,"abstract":"PLZT films in the composition range 7/0/100-32/0/100 have been deposited by CVD from a single source reagent using a liquid delivery/flash vaporization approach. Single phase perovskite films ranging in thickness from 1-5 /spl mu/m were deposited on fused silica substrates at 535/spl deg/C. The films had very strong crystallographic texture with [100] normal to the plane of the film. Optical loss per unit thickness was lower for thicker films suggesting that interfacial effects dominated losses. Very large electro-optic effects were observed in a number of the films. Birefringent shifts were measured by phase retardation in transmission mode with an electric field applied in the plane of the film using interdigitated electrodes. Birefringent shift varied quadratically with applied field and showed little hysteresis with R coefficients as high as 5/spl times/10/sup -16/ (m/V)/sup 2/. The strength of the electro-optic effect is attributed to the high degree of crystallinity of the films and the a-axis orientation.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"14 1","pages":"687-690"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78225509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522464
Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko
The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named "pyrotransistor" that is uncooled far infrared detector based on MESFET technology.
{"title":"Pyrotransistor-GaAs FET with a \"pyroelectric wafer\" gate","authors":"Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko","doi":"10.1109/ISAF.1994.522464","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522464","url":null,"abstract":"The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named \"pyrotransistor\" that is uncooled far infrared detector based on MESFET technology.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"698-700"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83272982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522451
F. Yu, A. Bhalla, S. Yin, F. Zhao, Z. Wu, D. Salerno
A specially doped photorefractive (PR) crystal Ce:Fe:LiNbO/sub 3/, and the effect due to Ce and Fe dopants are reported. We have found that the double-doped crystal exhibits higher PR sensitivity, larger dynamic range, broader spectral bandwidth, and lower scattering noise. It is about 10-times higher in PR sensitivity in the red light region (633 nm), as compared with the reported data. We have also discovered anomalous enhancement of PR effects which occur at 57/spl deg/C, 70/spl deg/C and 110/spl deg/C. The anomalies are primarily due to possible structural phase-transitions of the crystal at these temperatures. Several applications of this specially doped PR (Ce:Fe:LiNbO/sub 3/) crystal (both bulk and fiber) are also provided.
{"title":"Ce:Fe:LiNbO/sub 3/ photorefractive crystal: material properties and applications","authors":"F. Yu, A. Bhalla, S. Yin, F. Zhao, Z. Wu, D. Salerno","doi":"10.1109/ISAF.1994.522451","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522451","url":null,"abstract":"A specially doped photorefractive (PR) crystal Ce:Fe:LiNbO/sub 3/, and the effect due to Ce and Fe dopants are reported. We have found that the double-doped crystal exhibits higher PR sensitivity, larger dynamic range, broader spectral bandwidth, and lower scattering noise. It is about 10-times higher in PR sensitivity in the red light region (633 nm), as compared with the reported data. We have also discovered anomalous enhancement of PR effects which occur at 57/spl deg/C, 70/spl deg/C and 110/spl deg/C. The anomalies are primarily due to possible structural phase-transitions of the crystal at these temperatures. Several applications of this specially doped PR (Ce:Fe:LiNbO/sub 3/) crystal (both bulk and fiber) are also provided.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"51 1","pages":"636-641"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87132482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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