Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522440
M. R. Cockburn, D. Hall, C. Millar
Studies on the hot isostatic pressing (HIPing) of Sm, Mn-doped lead titanate ceramics in an argon/oxygen atmosphere have shown that the HIPed materials exhibit a substantially lower dielectric loss than conventionally sintered materials (tan /spl delta/ being reduced from approximately 0.02 to 0.01 at 1 kHz). The present work was carried out in order to identify the processing variables which are most important in effecting this reduction in loss. The materials were prepared by conventional solid state reaction and subjected to a variety of HIPing and annealing conditions. A mechanism involving the re-distribution of Mn ions among the Pb and Ti sites during HIPing is proposed to account for the observed changes in dielectric loss, which show a strong correlation with changes in the electrical conductivity.
{"title":"The effect of high temperature HIPing and annealing on the dielectric properties of modified lead titanate ceramics","authors":"M. R. Cockburn, D. Hall, C. Millar","doi":"10.1109/ISAF.1994.522440","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522440","url":null,"abstract":"Studies on the hot isostatic pressing (HIPing) of Sm, Mn-doped lead titanate ceramics in an argon/oxygen atmosphere have shown that the HIPed materials exhibit a substantially lower dielectric loss than conventionally sintered materials (tan /spl delta/ being reduced from approximately 0.02 to 0.01 at 1 kHz). The present work was carried out in order to identify the processing variables which are most important in effecting this reduction in loss. The materials were prepared by conventional solid state reaction and subjected to a variety of HIPing and annealing conditions. A mechanism involving the re-distribution of Mn ions among the Pb and Ti sites during HIPing is proposed to account for the observed changes in dielectric loss, which show a strong correlation with changes in the electrical conductivity.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"101 1","pages":"597-600"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82754317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522433
M. Huh, K. Cho, H. Nam, H. Lee
Electrical degradation of calcium-containing MLCCs having nickel internal electrode was studied using a highly accelerated life test set-up. Both extrinsic and intrinsic failures were identified in commercial MLCCs. From the estimated values of degradation parameters such as voltage exponent factor and pseudo-activation energy, it was found that the intrinsic failure took place by thermal runaway. Although, the degradation pattern for nickel electrode MLCCs was similar to that for common palladium electrode MLCCs, the maximum rated lifetime of the former was in the range of 5 to 30 years and was, in general, shorter than that of the latter. This difference was ascribed to the difference in oxygen vacancy concentrations. Thus, possible degradation mechanisms should be related to oxygen vacancy movement. Among them are reduction model, grain boundary barrier model and de-mixing model.
{"title":"Degradation behavior of Ca-doped barium titanate ceramic capacitors","authors":"M. Huh, K. Cho, H. Nam, H. Lee","doi":"10.1109/ISAF.1994.522433","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522433","url":null,"abstract":"Electrical degradation of calcium-containing MLCCs having nickel internal electrode was studied using a highly accelerated life test set-up. Both extrinsic and intrinsic failures were identified in commercial MLCCs. From the estimated values of degradation parameters such as voltage exponent factor and pseudo-activation energy, it was found that the intrinsic failure took place by thermal runaway. Although, the degradation pattern for nickel electrode MLCCs was similar to that for common palladium electrode MLCCs, the maximum rated lifetime of the former was in the range of 5 to 30 years and was, in general, shorter than that of the latter. This difference was ascribed to the difference in oxygen vacancy concentrations. Thus, possible degradation mechanisms should be related to oxygen vacancy movement. Among them are reduction model, grain boundary barrier model and de-mixing model.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"62 1","pages":"572-576"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90264333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522462
A. Bell, Y. Huang, M. Kohli, O. Paul, P. Ryser, M. Forster
Due to its high pyroelectric coefficient, low permittivity and relatively low piezoelectric coefficients, lead titanate is an important candidate for use in pyroelectric detectors. Sol-gel processing of lead titanate thin films, in combination with micro-machining of silicon substrates, is being used for the development of low-cost infra-red detectors with properties equivalent to existing "bulk" or single crystal devices. Here we report on some aspects of the sol-gel chemistry, the optimisation of the pyroelectric figure of merit and the fabrication and characterisation of an infra-red detector, consisting of two pyroelectric elements on a micro-machined SiO/sub 2/-Si/sub 3/N/sub 4/ membrane.
{"title":"PbTiO/sub 3/ thin films for pyroelectric detection","authors":"A. Bell, Y. Huang, M. Kohli, O. Paul, P. Ryser, M. Forster","doi":"10.1109/ISAF.1994.522462","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522462","url":null,"abstract":"Due to its high pyroelectric coefficient, low permittivity and relatively low piezoelectric coefficients, lead titanate is an important candidate for use in pyroelectric detectors. Sol-gel processing of lead titanate thin films, in combination with micro-machining of silicon substrates, is being used for the development of low-cost infra-red detectors with properties equivalent to existing \"bulk\" or single crystal devices. Here we report on some aspects of the sol-gel chemistry, the optimisation of the pyroelectric figure of merit and the fabrication and characterisation of an infra-red detector, consisting of two pyroelectric elements on a micro-machined SiO/sub 2/-Si/sub 3/N/sub 4/ membrane.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"34 1","pages":"691-694"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74494516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522461
J. Roeder, S. Bilodeau, P. Van Buskirk, V. Ozguz, J. Ma, S. Lee
PLZT films in the composition range 7/0/100-32/0/100 have been deposited by CVD from a single source reagent using a liquid delivery/flash vaporization approach. Single phase perovskite films ranging in thickness from 1-5 /spl mu/m were deposited on fused silica substrates at 535/spl deg/C. The films had very strong crystallographic texture with [100] normal to the plane of the film. Optical loss per unit thickness was lower for thicker films suggesting that interfacial effects dominated losses. Very large electro-optic effects were observed in a number of the films. Birefringent shifts were measured by phase retardation in transmission mode with an electric field applied in the plane of the film using interdigitated electrodes. Birefringent shift varied quadratically with applied field and showed little hysteresis with R coefficients as high as 5/spl times/10/sup -16/ (m/V)/sup 2/. The strength of the electro-optic effect is attributed to the high degree of crystallinity of the films and the a-axis orientation.
{"title":"Liquid delivery CVD of PLZT thick films for electro-optic applications","authors":"J. Roeder, S. Bilodeau, P. Van Buskirk, V. Ozguz, J. Ma, S. Lee","doi":"10.1109/ISAF.1994.522461","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522461","url":null,"abstract":"PLZT films in the composition range 7/0/100-32/0/100 have been deposited by CVD from a single source reagent using a liquid delivery/flash vaporization approach. Single phase perovskite films ranging in thickness from 1-5 /spl mu/m were deposited on fused silica substrates at 535/spl deg/C. The films had very strong crystallographic texture with [100] normal to the plane of the film. Optical loss per unit thickness was lower for thicker films suggesting that interfacial effects dominated losses. Very large electro-optic effects were observed in a number of the films. Birefringent shifts were measured by phase retardation in transmission mode with an electric field applied in the plane of the film using interdigitated electrodes. Birefringent shift varied quadratically with applied field and showed little hysteresis with R coefficients as high as 5/spl times/10/sup -16/ (m/V)/sup 2/. The strength of the electro-optic effect is attributed to the high degree of crystallinity of the films and the a-axis orientation.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"14 1","pages":"687-690"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78225509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522428
S. Phanjoubam, D. Kothari, C. Prakash, P. Kishan
The paper reports the influence of magnesium substitution on structural and electrical properties of lithium ferrites. The samples with compositional formula Li/sub (1-x//2)Mg/sub x/Fe/sub (5-x//2)O/sub 4/ with x ranging from 0.1 to 0.9 were prepared by standard dry ceramic method. XRD shows all the samples to be single phase spinel and the value of lattice constant was found to increase with increasing substitution level x. The room temperature d.c. resistivity increases with x. The variation has been explained in terms of hopping mechanism and the cation distribution. The resistivity with temperature shows a change in slope which does not correspond to Curie temperature. The activation energy determined from the slopes in two temperature regions shows a large difference. It has been interpreted in terms of two conduction mechanisms i.e. ionic and electronic. The dielectric measurements were carried out at room temperature in the frequency range 10 kHz to 10 MHz. Dielectric constant shows a dispersion with frequency for all the samples. The dielectric loss decreases with frequency and does not show any peak with frequency for any of the samples.
{"title":"Dielectric properties and D.C. resistivity of magnesium-substituted lithium ferrites","authors":"S. Phanjoubam, D. Kothari, C. Prakash, P. Kishan","doi":"10.1109/ISAF.1994.522428","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522428","url":null,"abstract":"The paper reports the influence of magnesium substitution on structural and electrical properties of lithium ferrites. The samples with compositional formula Li/sub (1-x//2)Mg/sub x/Fe/sub (5-x//2)O/sub 4/ with x ranging from 0.1 to 0.9 were prepared by standard dry ceramic method. XRD shows all the samples to be single phase spinel and the value of lattice constant was found to increase with increasing substitution level x. The room temperature d.c. resistivity increases with x. The variation has been explained in terms of hopping mechanism and the cation distribution. The resistivity with temperature shows a change in slope which does not correspond to Curie temperature. The activation energy determined from the slopes in two temperature regions shows a large difference. It has been interpreted in terms of two conduction mechanisms i.e. ionic and electronic. The dielectric measurements were carried out at room temperature in the frequency range 10 kHz to 10 MHz. Dielectric constant shows a dispersion with frequency for all the samples. The dielectric loss decreases with frequency and does not show any peak with frequency for any of the samples.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"554-557"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76013482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522436
Y.D. Kim, S. M. Landin, I. Cornejo, M. J. Haun
Commercial ferroelectric thick films have been developed with high dielectric constants for capacitor applications. However, these compositions typically do not densify well in thick film form at characteristic firing temperatures (850/spl sim/900/spl deg/C), and thus require encapsulants to provide environmental stability. In this paper, ferroelectric compositions that can be fired at low temperatures with useful dielectric properties for thick film application are presented based on the combination of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN)-PbTiO/sub 3/ (PT) with Pb/sub 5/Ge/sub 2/SiO/sub 11/ (PGS). The PGS melts at /spl ap/724/spl deg/C, and causes liquid phase sintering of the PMN-PT at low temperatures. Thick film samples of PMN-PT with 30 weight percent PGS and 5 weight percent PbO additions densify to closed porosity fired at 850/spl deg/C for 10 minutes with a room temperature 1 KHz dielectric constant greater than 1500 and a dissipation factor less than 6%. Preliminary results indicate that these compositions are compatible with a commercial silver thick film conductor paste (DuPont 6160).
{"title":"Low-firing Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/-Pb/sub 5/Ge/sub 2/SiO/sub 11/ compositions for thick film capacitor applications","authors":"Y.D. Kim, S. M. Landin, I. Cornejo, M. J. Haun","doi":"10.1109/ISAF.1994.522436","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522436","url":null,"abstract":"Commercial ferroelectric thick films have been developed with high dielectric constants for capacitor applications. However, these compositions typically do not densify well in thick film form at characteristic firing temperatures (850/spl sim/900/spl deg/C), and thus require encapsulants to provide environmental stability. In this paper, ferroelectric compositions that can be fired at low temperatures with useful dielectric properties for thick film application are presented based on the combination of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN)-PbTiO/sub 3/ (PT) with Pb/sub 5/Ge/sub 2/SiO/sub 11/ (PGS). The PGS melts at /spl ap/724/spl deg/C, and causes liquid phase sintering of the PMN-PT at low temperatures. Thick film samples of PMN-PT with 30 weight percent PGS and 5 weight percent PbO additions densify to closed porosity fired at 850/spl deg/C for 10 minutes with a room temperature 1 KHz dielectric constant greater than 1500 and a dissipation factor less than 6%. Preliminary results indicate that these compositions are compatible with a commercial silver thick film conductor paste (DuPont 6160).","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"5 1","pages":"585-588"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76403879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522342
K. Oh, K. Uchino, L. Cross
The Ba(Ti,Sn)O/sub 3/ ceramics are known as relaxor materials and they show very small hysteresis of field induced strains and field induced polarizations. An optical study was attempted to explain these dielectric properties. Domain structures and motions in Ba(Ti/sub 1-x/Sn/sub x/)O/sub 3/ (x=0, 0.05, 0.1, 0.13) ceramics were observed under an electric field at various temperatures using a high resolution CCD microscope system. Electrical properties such as field induced strains, dielectric properties and field induced polarization characteristics were also measured. The Ba(Ti/sub 1-x/ Sn/sub x/)O/sub 3/ ceramics showed a significant difference in domain structures and motions with changing composition. The domain structure became tiny and complex with increasing x. Changes of domain structures due to the phase transitions were also observed with varying temperature. The domain reorientation was easily induced with rising and falling electric field. The results of domain observations can explain the electrical properties well.
{"title":"Electric properties and domain structures in Ba(Ti,Sn)O/sub 3/ ceramics","authors":"K. Oh, K. Uchino, L. Cross","doi":"10.1109/ISAF.1994.522342","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522342","url":null,"abstract":"The Ba(Ti,Sn)O/sub 3/ ceramics are known as relaxor materials and they show very small hysteresis of field induced strains and field induced polarizations. An optical study was attempted to explain these dielectric properties. Domain structures and motions in Ba(Ti/sub 1-x/Sn/sub x/)O/sub 3/ (x=0, 0.05, 0.1, 0.13) ceramics were observed under an electric field at various temperatures using a high resolution CCD microscope system. Electrical properties such as field induced strains, dielectric properties and field induced polarization characteristics were also measured. The Ba(Ti/sub 1-x/ Sn/sub x/)O/sub 3/ ceramics showed a significant difference in domain structures and motions with changing composition. The domain structure became tiny and complex with increasing x. Changes of domain structures due to the phase transitions were also observed with varying temperature. The domain reorientation was easily induced with rising and falling electric field. The results of domain observations can explain the electrical properties well.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"15 1","pages":"218-221"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79342297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522378
J. Fielding, S. Jang, T. Shrout
Several electrostrictive materials were investigated as candidates for high frequency transducer applications. Families investigated included (1-x)Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-(x)PbTiO/sub 3/ and PLZT relaxors, and Srand Sn-substituted BaTiO/sub 3/ normal ferroelectrics. The field dependent dielectric, piezoelectric and elastic properties were characterized at frequencies between 100 kHz and 5 MHz. The large magnitude and E-field tunability of the electromechanical and elastic properties observed in several of the materials may present opportunities for several new transducer applications, such as biomedical imaging and non-destructive evaluation.
{"title":"Field-induced piezoelectric materials for 100 kHz-10 MHz transducer applications","authors":"J. Fielding, S. Jang, T. Shrout","doi":"10.1109/ISAF.1994.522378","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522378","url":null,"abstract":"Several electrostrictive materials were investigated as candidates for high frequency transducer applications. Families investigated included (1-x)Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-(x)PbTiO/sub 3/ and PLZT relaxors, and Srand Sn-substituted BaTiO/sub 3/ normal ferroelectrics. The field dependent dielectric, piezoelectric and elastic properties were characterized at frequencies between 100 kHz and 5 MHz. The large magnitude and E-field tunability of the electromechanical and elastic properties observed in several of the materials may present opportunities for several new transducer applications, such as biomedical imaging and non-destructive evaluation.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"87 1","pages":"363-366"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78151841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522330
A. Dantsiger, O.N. Razumovskaja, L.A. Reznitchenko, L. D. Grineva, S. Dudkina, S.V. Gavrilyatchenko, N.V. Bergunova
The piezoceramic materials, possessing a wide variety of properties, have been designed. They may be used effectively in the various fields of science and technology.
已设计出具有多种性能的压电陶瓷材料。它们可以有效地应用于科学技术的各个领域。
{"title":"High-efficiency ferro-piezoceramic PCR-type materials for various applications","authors":"A. Dantsiger, O.N. Razumovskaja, L.A. Reznitchenko, L. D. Grineva, S. Dudkina, S.V. Gavrilyatchenko, N.V. Bergunova","doi":"10.1109/ISAF.1994.522330","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522330","url":null,"abstract":"The piezoceramic materials, possessing a wide variety of properties, have been designed. They may be used effectively in the various fields of science and technology.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"28 7","pages":"175-177"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72562982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522413
L. A. Sapozhnikov, I. Sem, I. Zakharchenko, E. Sviridov, V. Alyoshin, V. Dudkevich
The Pb(Zr,Ti,W,Cd)O/sub 3/ (PZT) films were deposited by rf-sputtering of stoichiometric targets in an oxygen atmosphere. Epitaxial films had a tetragonal unit cell at room temperature. The unit cell parameter vs temperature curve showed a kink at phase transition temperature characteristic of the bulk material. Polycrystalline films had a pseudocubic unit cell. In spite of the presence of a full set of ferroelectric properties no anomalies in the temperature dependence of the unit cell parameter at phase transition were observed. The only evidence of the presence of the structural phase transition to a cubic phase was the essential decrease of intensity of X-ray reflections with an odd sum of indices as in the epitaxial films. These reflection intensities are most sensitive to the displacement of Zr and Ti cations with respect to Pb on approaching the Curie point temperature.
{"title":"The structural phase transition in PZT ferroelectric films","authors":"L. A. Sapozhnikov, I. Sem, I. Zakharchenko, E. Sviridov, V. Alyoshin, V. Dudkevich","doi":"10.1109/ISAF.1994.522413","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522413","url":null,"abstract":"The Pb(Zr,Ti,W,Cd)O/sub 3/ (PZT) films were deposited by rf-sputtering of stoichiometric targets in an oxygen atmosphere. Epitaxial films had a tetragonal unit cell at room temperature. The unit cell parameter vs temperature curve showed a kink at phase transition temperature characteristic of the bulk material. Polycrystalline films had a pseudocubic unit cell. In spite of the presence of a full set of ferroelectric properties no anomalies in the temperature dependence of the unit cell parameter at phase transition were observed. The only evidence of the presence of the structural phase transition to a cubic phase was the essential decrease of intensity of X-ray reflections with an odd sum of indices as in the epitaxial films. These reflection intensities are most sensitive to the displacement of Zr and Ti cations with respect to Pb on approaching the Curie point temperature.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"15 1","pages":"499-501"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75068906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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