Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522300
S. Sengupta, L. Sengupta, S. Stowell, É. Ngo, W. E. Kosik, D. Vijay
This work has been carried out as part of an ongoing investigation in which thin film ferroelectric phase shifters are being constructed, tested, and optimized. The phase shifters will be incorporated into multi-element phased array antennas. The beam steering material used here was Ba/sub 0.6/Sr/sub 0.4/TiO/sub 3/ (BSTO) and BSTO with 1 wt% oxide additive. Thin films of BSTO have been deposited by pulsed laser deposition (PLD) onto various oxide and fluoride substrates. These include oxide substrates such as magnesium oxide (MgO), sapphire (Al/sub 2/O/sub 3/), lanthanum aluminate (LaAlO/sub 3/), neodymium gallate (NdGaO/sub 3/), and fluoride substrates such as rubidium manganese fluoride (RbMnF/sub 3/). These substrates were selected for their relatively low dielectric constants and good lattice matches to the ferroelectric thin film compound (a=3.94 /spl Aring/). The substrate/film interfaces, areal film thicknesses and compositional variation have been studied using Rutherford backscattering spectroscopy (RBS), and physical thicknesses have been measured using a profilometer. The orientation of the thin films was investigated using glancing angle X-ray diffraction. Various electrodes have been used in order to optimize the electronic properties of the films. These electronic properties were tested at 30 KHz using an HP 4194A impedance analyzer. The measured electronic properties include the dielectric constant, and (change in the dielectric constant with applied electric field). The electronic properties have been correlated to the results derived from RBS and x-ray data and will be discussed in terms of substrate and electroding optimization.
{"title":"Analysis of ferroelectric thin films deposited by pulsed laser deposition on oxide and fluoride substrates","authors":"S. Sengupta, L. Sengupta, S. Stowell, É. Ngo, W. E. Kosik, D. Vijay","doi":"10.1109/ISAF.1994.522300","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522300","url":null,"abstract":"This work has been carried out as part of an ongoing investigation in which thin film ferroelectric phase shifters are being constructed, tested, and optimized. The phase shifters will be incorporated into multi-element phased array antennas. The beam steering material used here was Ba/sub 0.6/Sr/sub 0.4/TiO/sub 3/ (BSTO) and BSTO with 1 wt% oxide additive. Thin films of BSTO have been deposited by pulsed laser deposition (PLD) onto various oxide and fluoride substrates. These include oxide substrates such as magnesium oxide (MgO), sapphire (Al/sub 2/O/sub 3/), lanthanum aluminate (LaAlO/sub 3/), neodymium gallate (NdGaO/sub 3/), and fluoride substrates such as rubidium manganese fluoride (RbMnF/sub 3/). These substrates were selected for their relatively low dielectric constants and good lattice matches to the ferroelectric thin film compound (a=3.94 /spl Aring/). The substrate/film interfaces, areal film thicknesses and compositional variation have been studied using Rutherford backscattering spectroscopy (RBS), and physical thicknesses have been measured using a profilometer. The orientation of the thin films was investigated using glancing angle X-ray diffraction. Various electrodes have been used in order to optimize the electronic properties of the films. These electronic properties were tested at 30 KHz using an HP 4194A impedance analyzer. The measured electronic properties include the dielectric constant, and (change in the dielectric constant with applied electric field). The electronic properties have been correlated to the results derived from RBS and x-ray data and will be discussed in terms of substrate and electroding optimization.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"23 1","pages":"70-73"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85528899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522483
S. E. Prasad, S. Varma, T. Hoang, T. Wheat, A. Ahmad
The role of statistical design in the development and optimization of ceramic products is examined with particular reference to lead magnesium niobate/lead titanate (PMN-PT) ceramic dielectrics. It is shown that considerable benefits can be derived by following an appropriate design in which a number of factors (processing parameters) are varied simultaneously while the system response such as density, dielectric constant, loss, etc. is monitored. If it is assumed that complex factor interactions (e.g., having greater than three factors) can be ignored, only a fraction of the whole factorial matrix need be examined. Even in cases where only eight factors are involved each having only two levels, useful information can be obtained from only 16 trials drawn from the total of 256 trials (2/sup 8/) required of a full factorial matrix. Such studies are valuable in screening and ranking the importance of the various factors on the system response. Examples of such screening designs and the subsequent modelling of the system response for the important process factors so identified are presented.
{"title":"The role of statistical design in the development of electrostrictive materials","authors":"S. E. Prasad, S. Varma, T. Hoang, T. Wheat, A. Ahmad","doi":"10.1109/ISAF.1994.522483","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522483","url":null,"abstract":"The role of statistical design in the development and optimization of ceramic products is examined with particular reference to lead magnesium niobate/lead titanate (PMN-PT) ceramic dielectrics. It is shown that considerable benefits can be derived by following an appropriate design in which a number of factors (processing parameters) are varied simultaneously while the system response such as density, dielectric constant, loss, etc. is monitored. If it is assumed that complex factor interactions (e.g., having greater than three factors) can be ignored, only a fraction of the whole factorial matrix need be examined. Even in cases where only eight factors are involved each having only two levels, useful information can be obtained from only 16 trials drawn from the total of 256 trials (2/sup 8/) required of a full factorial matrix. Such studies are valuable in screening and ranking the importance of the various factors on the system response. Examples of such screening designs and the subsequent modelling of the system response for the important process factors so identified are presented.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"10 1","pages":"762-765"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87824907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522298
S. Okamura, A. Kakimi, Y. Yagi, K. Mori, R. Tsukamoto
Fine micropatterns with linewidth of 0.35 /spl mu/m were fabricated by irradiation with an electron beam of metal naphthenate films, being precursors of ferroelectric oxides, and development with a solvent. Relatively large patterns were crystallized into the single phase Bi/sub 4/Ti/sub 3/O/sub 12/ with c-axis orientation by successive heat-treatment at 800/spl deg/C. Micropatterns with linewidth of 1 /spl mu/m were crystallized into single crystals and their volume was reduced to 15% by the heat-treatment of PZT and Bi/sub 4/Ti/sub 3/O/sub 12/ thin films formed by the dipping pyrolysis method, which is the base of this patterning process. Good ferroelectric properties were exhibited; the remanent polarization P/sub r/ and the coercive field E/sub c/ were 24 /spl mu/C/cm/sup 2/ and 39 kV/cm for PZT, and 1.6 /spl mu/C/cm/sup 2/ and 24 kV/cm for Bi/sub 4/Ti/sub 3/O/sub 12/, respectively.
{"title":"Micropatterning process of ferroelectric oxides by irradiation of an electron beam on metal naphthenate films","authors":"S. Okamura, A. Kakimi, Y. Yagi, K. Mori, R. Tsukamoto","doi":"10.1109/ISAF.1994.522298","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522298","url":null,"abstract":"Fine micropatterns with linewidth of 0.35 /spl mu/m were fabricated by irradiation with an electron beam of metal naphthenate films, being precursors of ferroelectric oxides, and development with a solvent. Relatively large patterns were crystallized into the single phase Bi/sub 4/Ti/sub 3/O/sub 12/ with c-axis orientation by successive heat-treatment at 800/spl deg/C. Micropatterns with linewidth of 1 /spl mu/m were crystallized into single crystals and their volume was reduced to 15% by the heat-treatment of PZT and Bi/sub 4/Ti/sub 3/O/sub 12/ thin films formed by the dipping pyrolysis method, which is the base of this patterning process. Good ferroelectric properties were exhibited; the remanent polarization P/sub r/ and the coercive field E/sub c/ were 24 /spl mu/C/cm/sup 2/ and 39 kV/cm for PZT, and 1.6 /spl mu/C/cm/sup 2/ and 24 kV/cm for Bi/sub 4/Ti/sub 3/O/sub 12/, respectively.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"21 1","pages":"62-65"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91166266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522500
R.B. Liu, S. Lin, C. Qu, C. Yao, Y.H. Jin, Y.S. Lin, Y.R. Zhang
Theoretical relationship between the detectivity of small area IR detector with a capacitance compensated preamplifier and the parameters of pyroelectric materials was investigated. The series Sr doped pyroelectric ceramics based on PbZrO/sub 3/-PbNbFeO/sub 3/-PbTiO/sub 3/ system were manufactured. The pyroelectric coefficient ranges of above system are 4.4-7.2/spl times/10/sup -4/ cm/sup -2/ K/sup -1/ and the permittivity ranges are 290-500. Above materials were used to make small area (/spl phi/0.3 mm) IR detector. There is a very good agreement between measured and calculated D* values. The highest detectivity D* of small area IR detector with the thickness 0.035 mm is 3/spl times/10/sup 8/ cm Hz/sup 1/2/ W/sup -1/, which shows that this type pyroelectric ceramics had a strong potential to be a good candidate in focal plane thermal imaging arrays application.
{"title":"Series pyroelectric ceramics used for small area IR detector","authors":"R.B. Liu, S. Lin, C. Qu, C. Yao, Y.H. Jin, Y.S. Lin, Y.R. Zhang","doi":"10.1109/ISAF.1994.522500","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522500","url":null,"abstract":"Theoretical relationship between the detectivity of small area IR detector with a capacitance compensated preamplifier and the parameters of pyroelectric materials was investigated. The series Sr doped pyroelectric ceramics based on PbZrO/sub 3/-PbNbFeO/sub 3/-PbTiO/sub 3/ system were manufactured. The pyroelectric coefficient ranges of above system are 4.4-7.2/spl times/10/sup -4/ cm/sup -2/ K/sup -1/ and the permittivity ranges are 290-500. Above materials were used to make small area (/spl phi/0.3 mm) IR detector. There is a very good agreement between measured and calculated D* values. The highest detectivity D* of small area IR detector with the thickness 0.035 mm is 3/spl times/10/sup 8/ cm Hz/sup 1/2/ W/sup -1/, which shows that this type pyroelectric ceramics had a strong potential to be a good candidate in focal plane thermal imaging arrays application.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"356 7","pages":"812-814"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91526141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522486
G. Wood, B. P. Ketchel, R. Neurgaonkar
The effect on the photorefractive and optical properties by varying Cr and Mo dopant concentrations equally in co-doped SBN:60 is investigated. We report the effect on the absorption, two-beam coupling, speed of response, and diffraction efficiency. From these measurements the role of the donor and acceptor density is determined.
{"title":"Photorefractive properties of Cr/Mo co-doped SBN:60","authors":"G. Wood, B. P. Ketchel, R. Neurgaonkar","doi":"10.1109/ISAF.1994.522486","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522486","url":null,"abstract":"The effect on the photorefractive and optical properties by varying Cr and Mo dopant concentrations equally in co-doped SBN:60 is investigated. We report the effect on the absorption, two-beam coupling, speed of response, and diffraction efficiency. From these measurements the role of the donor and acceptor density is determined.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"117 1","pages":"773-774"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88473094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522422
I. Yoo, S. Desu
Lifetime of PZT capacitors was defined and evaluated by measuring critical number of cycles where electrical degradation (increase of leakage current) begins to dominate polarization during fatigue tests. It was observed that external failure (electrode burst) occurs during fatigue before electrical degradation at high voltage and/or temperature. The normal internal failure (electrical degradation and breakdown) is predominant at relatively lower voltage and/or temperature. PZT capacitors with smaller electrode size shows shorter lifetime, and gentler input cycles (triangular wave rather than square wave, for example) reduces external failure, which implies breakdown under AC input voltage is related to thermal process. It was noticed that fatigue mechanism is not directly related to thermal breakdown.
{"title":"Breakdown in lead zirconate titanate (PZT) thin film capacitors","authors":"I. Yoo, S. Desu","doi":"10.1109/ISAF.1994.522422","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522422","url":null,"abstract":"Lifetime of PZT capacitors was defined and evaluated by measuring critical number of cycles where electrical degradation (increase of leakage current) begins to dominate polarization during fatigue tests. It was observed that external failure (electrode burst) occurs during fatigue before electrical degradation at high voltage and/or temperature. The normal internal failure (electrical degradation and breakdown) is predominant at relatively lower voltage and/or temperature. PZT capacitors with smaller electrode size shows shorter lifetime, and gentler input cycles (triangular wave rather than square wave, for example) reduces external failure, which implies breakdown under AC input voltage is related to thermal process. It was noticed that fatigue mechanism is not directly related to thermal breakdown.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"58 1","pages":"531-534"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81404256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522439
Z. Xu, Weng-Hsing Huang, D. Viehland, R. Neurgaonkar
Transmission electron microscopy (TEM) investigations have been performed on Sr/sub x/Ba/sub 1-x/Nb/sub 2/O/sub 6/ (SBN x/1-x). Bright-field imaging of <100>-orientated SBN 60/40 and 75/25 crystals revealed nanopolar domains with a strong shape anisotropy. The morphology of the nanopolar domains was needle-like. Selected area electron diffraction (SAED) patterns revealed the existence of 1/x[110] incommensurate modulations. Dark-field imaging of the incommensurate reflections found the existence of nanometer-sized ferroelastic domains. Diffuse scattering was observed in the SAED patterns along the <100>. This diffuse scattering is believed to arise due to strain gradient interactions between the A-site cation distribution and the incommensuration.
{"title":"Transmission electron microscopy study of strontium barium niobate relaxors","authors":"Z. Xu, Weng-Hsing Huang, D. Viehland, R. Neurgaonkar","doi":"10.1109/ISAF.1994.522439","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522439","url":null,"abstract":"Transmission electron microscopy (TEM) investigations have been performed on Sr/sub x/Ba/sub 1-x/Nb/sub 2/O/sub 6/ (SBN x/1-x). Bright-field imaging of <100>-orientated SBN 60/40 and 75/25 crystals revealed nanopolar domains with a strong shape anisotropy. The morphology of the nanopolar domains was needle-like. Selected area electron diffraction (SAED) patterns revealed the existence of 1/x[110] incommensurate modulations. Dark-field imaging of the incommensurate reflections found the existence of nanometer-sized ferroelastic domains. Diffuse scattering was observed in the SAED patterns along the <100>. This diffuse scattering is believed to arise due to strain gradient interactions between the A-site cation distribution and the incommensuration.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"67 1","pages":"595-596"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79541079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522395
Donhang Liu, D. Payne
Lead scandium tantalate (PST) was prepared by sol-gel processing, and the crystallization into the perovskite phase was determined at reduced temperatures (600-700/spl deg/C). The extent of B-site cation ordering was also determined as a function of cooling conditions. Results are reported for the integration of capacitors on silicon with a capacitance density greater than 200 fF//spl mu/m/sup 2/. A preferred (111) orientation was obtained, with ( 1/2 1/2 1/2 ) B-site cation partial ordering. No evidence was obtained for A-site Pb vacancy ordering. Results are reported for X-ray diffraction and selected-area electron diffraction investigations.
{"title":"Lower temperature crystallization and ordering in sol-gel derived Pb(Sc/sub 0.5/Ta/sub 0.5/)O/sub 3/ powders and thin layers","authors":"Donhang Liu, D. Payne","doi":"10.1109/ISAF.1994.522395","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522395","url":null,"abstract":"Lead scandium tantalate (PST) was prepared by sol-gel processing, and the crystallization into the perovskite phase was determined at reduced temperatures (600-700/spl deg/C). The extent of B-site cation ordering was also determined as a function of cooling conditions. Results are reported for the integration of capacitors on silicon with a capacitance density greater than 200 fF//spl mu/m/sup 2/. A preferred (111) orientation was obtained, with ( 1/2 1/2 1/2 ) B-site cation partial ordering. No evidence was obtained for A-site Pb vacancy ordering. Results are reported for X-ray diffraction and selected-area electron diffraction investigations.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"65 1","pages":"435-438"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83244661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522333
H. Wang, Q.M. Zhang, L. E. Cross, R. Ting, C. Coughlin, K. Rittenmyer
Electric-field-induced strains of polyurethane elastomers have been measured. The mechanical constrains and flexure motion of the samples which can cause large experimental error were excluded from the measured strain signals. The longitudinal and transverse strain coefficients are evaluated as functions of frequency. The dielectric and elastic properties and their temperature and frequency dependencies have also been studied. The experimental results show that strain larger than 2% can be obtained and that the sample processing conditions can affect the strain level. The contributions from Maxwell stress effect and electrostriction to the strain responses are examined. The results suggest that Maxwell stress effect plays an important role in electromechanical response of the materials.
{"title":"The origins of electromechanical response in polyurethane elastomers","authors":"H. Wang, Q.M. Zhang, L. E. Cross, R. Ting, C. Coughlin, K. Rittenmyer","doi":"10.1109/ISAF.1994.522333","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522333","url":null,"abstract":"Electric-field-induced strains of polyurethane elastomers have been measured. The mechanical constrains and flexure motion of the samples which can cause large experimental error were excluded from the measured strain signals. The longitudinal and transverse strain coefficients are evaluated as functions of frequency. The dielectric and elastic properties and their temperature and frequency dependencies have also been studied. The experimental results show that strain larger than 2% can be obtained and that the sample processing conditions can affect the strain level. The contributions from Maxwell stress effect and electrostriction to the strain responses are examined. The results suggest that Maxwell stress effect plays an important role in electromechanical response of the materials.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"58 3 1","pages":"182-185"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79566896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522288
T. Takenaka, M. Yamada, T. Okuda
A new solid solution, (1-x)Bi(Ni/sub 0.5/Ti/sub 0.5/)O/sub 3/x(Pb/sub a/Ba/sub b/)TiO/sub 3/ (a+b=1) (NTPB [100x-100a/100b])is studied. The dielectric, ferroelectric, piezoelectric and mechanical properties indicate a new group of piezoelectric ceramics. One of the end member of the solid solution, BINT(a=b=0, x=0) is a mixture of a bismuth layered structure consisting of Bi/sub 4/Ti/sub 3/O/sub 12/, NiO and Bi/sub 2/O/sub 3/. When x is increased, the crystal structure changes from a mixture of bismuth layered and perovskite structures to a single phase of the perovskite structure at x=0.2-0.25, being independent of the ratio of PbTiO/sub 3/ to BaTiO/sub 3/. The crystal phase with x/spl ges/0.25 of the solid solution is a perovskite structure. The electrical properties are mainly investigated for the specimens of the perovskite structure (x/spl ges/0.25) with 0.02 wt% added MnCO/sub 3/. The electromechanical coupling factors k/sub 33/, k/sub t/ and k/sub p/ of NTPB[40-100/0]+Mn (0.02 wt%) are 0.51, 0.47 and 0.32, respectively. The mechanical bending strength of NTPB[44.5-100/0]+Mn (0.02 wt%) is about 150 MPa.
{"title":"Development of new piezoelectric ceramics with bismuth perovskites","authors":"T. Takenaka, M. Yamada, T. Okuda","doi":"10.1109/ISAF.1994.522288","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522288","url":null,"abstract":"A new solid solution, (1-x)Bi(Ni/sub 0.5/Ti/sub 0.5/)O/sub 3/x(Pb/sub a/Ba/sub b/)TiO/sub 3/ (a+b=1) (NTPB [100x-100a/100b])is studied. The dielectric, ferroelectric, piezoelectric and mechanical properties indicate a new group of piezoelectric ceramics. One of the end member of the solid solution, BINT(a=b=0, x=0) is a mixture of a bismuth layered structure consisting of Bi/sub 4/Ti/sub 3/O/sub 12/, NiO and Bi/sub 2/O/sub 3/. When x is increased, the crystal structure changes from a mixture of bismuth layered and perovskite structures to a single phase of the perovskite structure at x=0.2-0.25, being independent of the ratio of PbTiO/sub 3/ to BaTiO/sub 3/. The crystal phase with x/spl ges/0.25 of the solid solution is a perovskite structure. The electrical properties are mainly investigated for the specimens of the perovskite structure (x/spl ges/0.25) with 0.02 wt% added MnCO/sub 3/. The electromechanical coupling factors k/sub 33/, k/sub t/ and k/sub p/ of NTPB[40-100/0]+Mn (0.02 wt%) are 0.51, 0.47 and 0.32, respectively. The mechanical bending strength of NTPB[44.5-100/0]+Mn (0.02 wt%) is about 150 MPa.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"99 1","pages":"21-24"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78375489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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