Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522396
K. Terabe, N. Iyi, H. Uematsu, I. Sakaguchi, Yasuhiro Matsui, K. Kitamura, S. Kimura
The effect of substrates on the crystallinity and interdiffusion behaviors in sol-gel derived LiNbO/sub 3/ films were investigated using X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy. The epitaxial films were obtained on (0001)-sapphire, (0001)-LiTaO/sub 3/ and (0001)-5%MgO doped LiNbO/sub 3/ substrates with similar crystal structures, but with a variety of lattice constants. When sapphire, which has the largest lattice mismatch with the film, was used, the resulting films heat-treated at 500/spl deg/C showed a low degree of crystallinity. On the other hand, the films on LiTaO/sub 3/ and 5% MgO doped LiNbO/sub 3/, which have smaller lattice mismatches, showed better degrees of crystallinity. Furthermore, these epitaxial films were formed without serious interdiffusion. Our study shows LiNbO/sub 3/ films, for the practical application such as optical waveguides, can be prepared by the sol-gel method using a substrate with a small lattice mismatch.
{"title":"Preparation of epitaxial LiNbO/sub 3/ films by the sol-gel method","authors":"K. Terabe, N. Iyi, H. Uematsu, I. Sakaguchi, Yasuhiro Matsui, K. Kitamura, S. Kimura","doi":"10.1109/ISAF.1994.522396","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522396","url":null,"abstract":"The effect of substrates on the crystallinity and interdiffusion behaviors in sol-gel derived LiNbO/sub 3/ films were investigated using X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy. The epitaxial films were obtained on (0001)-sapphire, (0001)-LiTaO/sub 3/ and (0001)-5%MgO doped LiNbO/sub 3/ substrates with similar crystal structures, but with a variety of lattice constants. When sapphire, which has the largest lattice mismatch with the film, was used, the resulting films heat-treated at 500/spl deg/C showed a low degree of crystallinity. On the other hand, the films on LiTaO/sub 3/ and 5% MgO doped LiNbO/sub 3/, which have smaller lattice mismatches, showed better degrees of crystallinity. Furthermore, these epitaxial films were formed without serious interdiffusion. Our study shows LiNbO/sub 3/ films, for the practical application such as optical waveguides, can be prepared by the sol-gel method using a substrate with a small lattice mismatch.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"31 1","pages":"439-442"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86671637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522417
C. Fan, W. Huebner
Samarium and manganese modified lead titanate thin films were fabricated by spin-coating an amorphous citrate precursor. These films transformed into an oxide film upon heat treatment at 400/spl deg/C or above. Relatively large area and crack-free thin films could be obtained by this process both easily and inexpensively. The rheological behavior of the precursor solution, as well as its thermal decomposition and phase development were studied by means of DSC/TGA and XRD. The thickness and grain size of the oxide film were examined by TEM and SEM.
{"title":"Processing and characterization of samarium and manganese modified lead titanate thin film","authors":"C. Fan, W. Huebner","doi":"10.1109/ISAF.1994.522417","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522417","url":null,"abstract":"Samarium and manganese modified lead titanate thin films were fabricated by spin-coating an amorphous citrate precursor. These films transformed into an oxide film upon heat treatment at 400/spl deg/C or above. Relatively large area and crack-free thin films could be obtained by this process both easily and inexpensively. The rheological behavior of the precursor solution, as well as its thermal decomposition and phase development were studied by means of DSC/TGA and XRD. The thickness and grain size of the oxide film were examined by TEM and SEM.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"28 1","pages":"512-515"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83613403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522497
S. Choi, J. W. Jung
46stract Dielectric, piezoelectric and pyroelectric properties of relaxor ferroelectrics in the 0. 65Pbl..Ba, (Mg1,3Ta2,3)03-0, 35PbTi03 solid solution series have been investigated. The dielectric constant and loss of ceramic samples were determined. The piezoelectric d33 constant and electromechanical coupling factor were measured for various compositions in the Ba-doping PMT-PT ceramics, The pyroelectric coefficient and spontaneous polarization were measured by the static Byer-Roundy method as a function of temperature. The values of dielectric constant, electromechanical coupling factor and pyroelectric coefficient for Ba-doped PMT-PT are much larger compared to the values observed for the undoped PMT-PT ceramics. Ba-doping also shifted the Tc downward, approximately 6 ‘C/mol% additon of Ea. Further additions of Ba could be used to shift the Tc downward without significantly changing the dielectric behav i or.
{"title":"Dielectric, Piezoelectric, and Pyroelectric Properties of Barium-Modified Lead Magnesium Tantalate-L","authors":"S. Choi, J. W. Jung","doi":"10.1109/ISAF.1994.522497","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522497","url":null,"abstract":"46stract Dielectric, piezoelectric and pyroelectric properties of relaxor ferroelectrics in the 0. 65Pbl..Ba, (Mg1,3Ta2,3)03-0, 35PbTi03 solid solution series have been investigated. The dielectric constant and loss of ceramic samples were determined. The piezoelectric d33 constant and electromechanical coupling factor were measured for various compositions in the Ba-doping PMT-PT ceramics, The pyroelectric coefficient and spontaneous polarization were measured by the static Byer-Roundy method as a function of temperature. The values of dielectric constant, electromechanical coupling factor and pyroelectric coefficient for Ba-doped PMT-PT are much larger compared to the values observed for the undoped PMT-PT ceramics. Ba-doping also shifted the Tc downward, approximately 6 ‘C/mol% additon of Ea. Further additions of Ba could be used to shift the Tc downward without significantly changing the dielectric behav i or.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"806-"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83637220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522482
Hua Ai, Jiefang Li, D. Viehland
The electromechanical behavior of hardened portland cement paste has been investigated as a function of measurement frequency and DC electrical bias using an interferometric technique. Large field induced shape changes on the order of 100 A have been found in millimeter thick specimens exposed to moisture. In addition, strong hysteresis effects were found on cycling a large AC field. Dry samples were found to exhibit no field-induced deformations. The mechanism underlying this anomalous behavior is believed to be an electro-osmotically induced swelling of the pore structures. Evidence in support of this hypothesis was found by corresponding investigations of porous silica gels.
{"title":"Electrically-induced shape changes in cement-based materials","authors":"Hua Ai, Jiefang Li, D. Viehland","doi":"10.1109/ISAF.1994.522482","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522482","url":null,"abstract":"The electromechanical behavior of hardened portland cement paste has been investigated as a function of measurement frequency and DC electrical bias using an interferometric technique. Large field induced shape changes on the order of 100 A have been found in millimeter thick specimens exposed to moisture. In addition, strong hysteresis effects were found on cycling a large AC field. Dry samples were found to exhibit no field-induced deformations. The mechanism underlying this anomalous behavior is believed to be an electro-osmotically induced swelling of the pore structures. Evidence in support of this hypothesis was found by corresponding investigations of porous silica gels.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"86 1","pages":"760-761"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79141025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522449
S. Gridnev, N.G. Pavlova, S. P. Rogova, L. Korotkov, V.V. Zaentsev
The dielectric properties and structure of the complex perovskite ceramics (0.7PbZrO/sub 3/-0.3K/sub 0.5/Bi/sub 0.5/TiO/sub 3/)+xSrTiO/sub 3/ have been investigated in the temperature range from 283 K to 333 K with the intention of understanding a change of a sign which occurs in the temperature coefficient of the capacitance at x/spl sime/0.5.
{"title":"Dielectric properties of strontium and lead based complex perovskite ceramics","authors":"S. Gridnev, N.G. Pavlova, S. P. Rogova, L. Korotkov, V.V. Zaentsev","doi":"10.1109/ISAF.1994.522449","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522449","url":null,"abstract":"The dielectric properties and structure of the complex perovskite ceramics (0.7PbZrO/sub 3/-0.3K/sub 0.5/Bi/sub 0.5/TiO/sub 3/)+xSrTiO/sub 3/ have been investigated in the temperature range from 283 K to 333 K with the intention of understanding a change of a sign which occurs in the temperature coefficient of the capacitance at x/spl sime/0.5.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"630-631"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79563776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522289
D. Chen, M. Azuma, L. Mcmillan, C. A. Paz de Araújo
A simple unified analytical ferroelectric model has been developed based on an effective field assumption and statistical physics, which covers ferroelectric hysteresis, switching, and phase transitions including first and second order phase transitions as well as Curie-Weiss law. The model parameters may be extracted from measured data using commercial customizable optimization tools such as SmartSpice's Optimizer. The model can be used for modeling, simulation and statistical process control for ferroelectric nonvolatile memory design and fabrication.
{"title":"A simple unified analytical model for ferroelectric thin film capacitor and its applications for nonvolatile memory operation","authors":"D. Chen, M. Azuma, L. Mcmillan, C. A. Paz de Araújo","doi":"10.1109/ISAF.1994.522289","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522289","url":null,"abstract":"A simple unified analytical ferroelectric model has been developed based on an effective field assumption and statistical physics, which covers ferroelectric hysteresis, switching, and phase transitions including first and second order phase transitions as well as Curie-Weiss law. The model parameters may be extracted from measured data using commercial customizable optimization tools such as SmartSpice's Optimizer. The model can be used for modeling, simulation and statistical process control for ferroelectric nonvolatile memory design and fabrication.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"120 1","pages":"25-28"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86167237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522310
E. Ching-Prado, W. Pérez, R. Katiyar, A. Garg, D. C. Agrawal
Solid solution having compositions Pb[Zr/sub x-y/Ce/sub y/Ti/sub 1-x/]O/sub 3/ with y=0.0, 0.001, 0.00125, and 0.02 were studied. The samples were prepared from sintered oxides. XRD measurements indicate a mixture of rhombohedral and tetragonal phases in all the samples, where the tetragonal phase increases with increasing CeO/sub 2/ concentration. Also, the c/a ratio of the tetragonal structure was found to increase with increasing CeO/sub 2/, content. Precipitation of cerium oxide was observed for the sample with y=0.02, showing that the solubility of CeO/sub 2/ in lead zirconate is lower than 2%. Raman scattering measurements confirm that all the samples are perovskite in structure, but inhomogeneities were found. The strong line around 465 cm/sup -1/, corresponding to F/sub 2g/ symmetry, shows the presence of cerium oxide in the sample with y=0.02. Finally, DSC measurements show that the Curie temperature decreases with increasing CeO/sub 2/ content.
{"title":"Structural and thermal study of Pb(Zr,Ti,Ce)O/sub 3/ ceramics","authors":"E. Ching-Prado, W. Pérez, R. Katiyar, A. Garg, D. C. Agrawal","doi":"10.1109/ISAF.1994.522310","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522310","url":null,"abstract":"Solid solution having compositions Pb[Zr/sub x-y/Ce/sub y/Ti/sub 1-x/]O/sub 3/ with y=0.0, 0.001, 0.00125, and 0.02 were studied. The samples were prepared from sintered oxides. XRD measurements indicate a mixture of rhombohedral and tetragonal phases in all the samples, where the tetragonal phase increases with increasing CeO/sub 2/ concentration. Also, the c/a ratio of the tetragonal structure was found to increase with increasing CeO/sub 2/, content. Precipitation of cerium oxide was observed for the sample with y=0.02, showing that the solubility of CeO/sub 2/ in lead zirconate is lower than 2%. Raman scattering measurements confirm that all the samples are perovskite in structure, but inhomogeneities were found. The strong line around 465 cm/sup -1/, corresponding to F/sub 2g/ symmetry, shows the presence of cerium oxide in the sample with y=0.02. Finally, DSC measurements show that the Curie temperature decreases with increasing CeO/sub 2/ content.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"28 1","pages":"108-110"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88608645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522404
S. M. Landin, M. J. Haun
This work investigates the crystallization of pure Pb/sub 5/Ge/sub 3/O/sub 11/ (PG) and composition in the Pb/sub 5/Ge/sub 3/O/sub 11/-PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ (PG-PZT) system. PG is of interest due to its low processing temperatures and possible application as pyroelectric sensors and nonvolatile ferroelectric memories. Compositions in the PG-PZT system crystallize to form multiple ferroelectric phases at relatively low temperatures, potentially offering a unique combination of ferroelectric properties and processing conditions. Ferroelectric thin films in the PG-PZT system were fabricated on (111) Pt-coated silicon substrates using sol gel processing techniques. Rapid thermal processing was utilized to investigate the time/temperature dependencies of crystallization, phase transformations and orientation of both Pb/sub 5/Ge/sub 3/O/sub 11/ and PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/. Pb/sub 5/Ge/sub 3/O/sub 11/ films with a thickness of 2000 /spl Aring/ crystallized with a c-axis orientation of greater than 90% when heat treated at 700/spl deg/C for 30 seconds.
{"title":"Processing and characterization of ferroelectric thin films in the Pb/sub 5/Ge/sub 3/O/sub 11/-PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ system","authors":"S. M. Landin, M. J. Haun","doi":"10.1109/ISAF.1994.522404","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522404","url":null,"abstract":"This work investigates the crystallization of pure Pb/sub 5/Ge/sub 3/O/sub 11/ (PG) and composition in the Pb/sub 5/Ge/sub 3/O/sub 11/-PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ (PG-PZT) system. PG is of interest due to its low processing temperatures and possible application as pyroelectric sensors and nonvolatile ferroelectric memories. Compositions in the PG-PZT system crystallize to form multiple ferroelectric phases at relatively low temperatures, potentially offering a unique combination of ferroelectric properties and processing conditions. Ferroelectric thin films in the PG-PZT system were fabricated on (111) Pt-coated silicon substrates using sol gel processing techniques. Rapid thermal processing was utilized to investigate the time/temperature dependencies of crystallization, phase transformations and orientation of both Pb/sub 5/Ge/sub 3/O/sub 11/ and PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/. Pb/sub 5/Ge/sub 3/O/sub 11/ films with a thickness of 2000 /spl Aring/ crystallized with a c-axis orientation of greater than 90% when heat treated at 700/spl deg/C for 30 seconds.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"16 1","pages":"468-471"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88740923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522457
V. Shur, E. L. Rumyantsev, S. Makarov, V. V. Volegov
In this paper we demonstrate the possibility of extracting original detail information about domain kinetics during polarization reversal in thin ferroelectric films from the switching current data. The developed method of mathematical treatment was verified by computer simulations and direct experiments in model ferroelectric single crystals.
{"title":"Switching in ferroelectric thin films: how to extract information about domain kinetics from traditional current data","authors":"V. Shur, E. L. Rumyantsev, S. Makarov, V. V. Volegov","doi":"10.1109/ISAF.1994.522457","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522457","url":null,"abstract":"In this paper we demonstrate the possibility of extracting original detail information about domain kinetics during polarization reversal in thin ferroelectric films from the switching current data. The developed method of mathematical treatment was verified by computer simulations and direct experiments in model ferroelectric single crystals.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"4 1","pages":"669-673"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88785663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522409
T. Yamamoto, H. Matsuoka
As sputtered ferroelectric and [001] oriented Bi/sub 4/Ti/sub 3/O/sub 12/ thin films were prepared on a Pt/Ti/SiO/sub 2//Si substrate at a comparatively low temperature around 330 /spl deg/C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar/sup +/ and O/sub 2/ and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm/sup 2/ and 51.2 kV/cm, respectively.
{"title":"Preparation of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by reactive magnetron sputtering using metal target and their evaluations","authors":"T. Yamamoto, H. Matsuoka","doi":"10.1109/ISAF.1994.522409","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522409","url":null,"abstract":"As sputtered ferroelectric and [001] oriented Bi/sub 4/Ti/sub 3/O/sub 12/ thin films were prepared on a Pt/Ti/SiO/sub 2//Si substrate at a comparatively low temperature around 330 /spl deg/C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar/sup +/ and O/sub 2/ and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm/sup 2/ and 51.2 kV/cm, respectively.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"601 1","pages":"485-487"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77322684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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