Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520044
E. Fortunato, C. Carvalho, A. Bicho, R. Martins
In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after white light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.
{"title":"Effect of different TCO interfaces on the performances presented by hydrogenated amorphous silicon p-i-n solar cells","authors":"E. Fortunato, C. Carvalho, A. Bicho, R. Martins","doi":"10.1109/WCPEC.1994.520044","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520044","url":null,"abstract":"In this paper we report results concerning the effect of the TCO interface on hydrogenated amorphous silicon (a-Si:H) p-i-n homojunction solar cells. Its correlation with dark current density-voltage (J-V) characteristics and spectral response, before and after white light-soaking degradation, is analysed. From this study, we conclude that the properties and stability of these devices are not only influenced by the a-Si:H film properties, but also by the properties of the transparent conductive electrode and its interface with the a-Si:H layer.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82449891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.519992
J. Kǒcka, M. Vaněček, P. Machácek, A. Fejfar, E. Šípek, Ho-The-Ha, I. Pelant, J. Frič, J. Rosa, Z. Remeš, A. Poruba, M. Konagai, W. Kusian
The authors present progress in the three regions important for optimization of the highest long term a-Si:H solar cells efficiency: (1) in order to achieve light saturated state rapidly and controllably a new method of the accelerated degradation by combined AM1 and pulsed ruby laser illumination is proposed; (2) diagnostic of the degraded state is then made possible by a new constant photocurrent method setup combining standard and transmission modes which gives absorption coefficient a in the absolute units and undisturbed by interferences; (3) the possibility to measure deep defect density of states directly on a-Si:H solar cells by space-charge-limited-current time-of-flight is demonstrated.
{"title":"Precise investigation of the light-saturated defect density in amorphous silicon very thin films and solar cells","authors":"J. Kǒcka, M. Vaněček, P. Machácek, A. Fejfar, E. Šípek, Ho-The-Ha, I. Pelant, J. Frič, J. Rosa, Z. Remeš, A. Poruba, M. Konagai, W. Kusian","doi":"10.1109/WCPEC.1994.519992","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.519992","url":null,"abstract":"The authors present progress in the three regions important for optimization of the highest long term a-Si:H solar cells efficiency: (1) in order to achieve light saturated state rapidly and controllably a new method of the accelerated degradation by combined AM1 and pulsed ruby laser illumination is proposed; (2) diagnostic of the degraded state is then made possible by a new constant photocurrent method setup combining standard and transmission modes which gives absorption coefficient a in the absolute units and undisturbed by interferences; (3) the possibility to measure deep defect density of states directly on a-Si:H solar cells by space-charge-limited-current time-of-flight is demonstrated.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82531615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520073
H. Ossenbrink, L. Rigolini, O. Chehab, O. van der Venne
A large photovoltaic facade was retrofitted to an industrial building complex of the Joint Research Centre. Amorphous silicon technology was chosen to cover the maximum possible area at a minimum of costs. The a-Si substrates are laminated within a double-glass facade element. Total area of the facade is 770 m/sup 2/, probably the largest PV facade in operation. Total power output fed into the grid is approximately 25 kWp after stabilisation. Emphasis was put on the architectural design and the visualisation of the function of the system to a wider public by an interactive user-display.
{"title":"Building integration of an amorphous silicon photovoltaic facade","authors":"H. Ossenbrink, L. Rigolini, O. Chehab, O. van der Venne","doi":"10.1109/WCPEC.1994.520073","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520073","url":null,"abstract":"A large photovoltaic facade was retrofitted to an industrial building complex of the Joint Research Centre. Amorphous silicon technology was chosen to cover the maximum possible area at a minimum of costs. The a-Si substrates are laminated within a double-glass facade element. Total area of the facade is 770 m/sup 2/, probably the largest PV facade in operation. Total power output fed into the grid is approximately 25 kWp after stabilisation. Emphasis was put on the architectural design and the visualisation of the function of the system to a wider public by an interactive user-display.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90791314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520562
J. Lammasniemi, K. Tappura, K. Smekalin
The effect of various window layers for InP solar cells are studied. Window materials that have type I and type II alignments in the window/emitter interface are compared. All window materials that form a type II alignment with InP, such as Al/sub 0.20/In/sub 0.80/P, Ga/sub 0.20/In/sub 0.80/P, Al/sub 0.55/In/sub 0.45/As and Al/sub 0.60/In/sub 0.40/P, cause a high interface recombination velocity, which deteriorates the carrier collection. This recombination takes place due to the spatially indirect quantum well transition between the triangular quantum wells formed in the interface. ZnSe as a window layer material with type I alignment does not have this problem, but decreased response in the short wavelength region is observed due to misfit dislocation induced trap sites. Future prospects for the window layer development for InP are discussed. The discussion is extended also to other III-V semiconductor based solar cell materials, such as Ga/sub 0.5/In/sub 0.5/P solar cells with Al/sub x/Ga/sub 1-x/As window layers.
{"title":"Recombination mechanisms at window/emitter interface in InP and other III-V semiconductor based solar cells","authors":"J. Lammasniemi, K. Tappura, K. Smekalin","doi":"10.1109/WCPEC.1994.520562","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520562","url":null,"abstract":"The effect of various window layers for InP solar cells are studied. Window materials that have type I and type II alignments in the window/emitter interface are compared. All window materials that form a type II alignment with InP, such as Al/sub 0.20/In/sub 0.80/P, Ga/sub 0.20/In/sub 0.80/P, Al/sub 0.55/In/sub 0.45/As and Al/sub 0.60/In/sub 0.40/P, cause a high interface recombination velocity, which deteriorates the carrier collection. This recombination takes place due to the spatially indirect quantum well transition between the triangular quantum wells formed in the interface. ZnSe as a window layer material with type I alignment does not have this problem, but decreased response in the short wavelength region is observed due to misfit dislocation induced trap sites. Future prospects for the window layer development for InP are discussed. The discussion is extended also to other III-V semiconductor based solar cell materials, such as Ga/sub 0.5/In/sub 0.5/P solar cells with Al/sub x/Ga/sub 1-x/As window layers.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90442505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520088
M. Nowlan, S. Hogan, G. Darkazalli, S. Sutherland, W. Breen, J. Murach, J. Patterson
The objective of this work is to reduce the cost and improve the quality of terrestrial photovoltaic modules by developing automated high-throughput (5 MW/yr) processes for interconnecting thin silicon solar cells. New low-stress, high-throughput processes have been developed for cell loading, alignment, and inspection, interconnect ribbon handling, flux application, ribbon-to-cell soldering, cell string handling, and I-V testing of assembled cell strings. Both standard thickness (350 /spl mu/m) and thin (200 /spl mu/m) cells have been used to evaluate and refine these processes.
{"title":"Advanced automation techniques for interconnecting thin silicon solar cells","authors":"M. Nowlan, S. Hogan, G. Darkazalli, S. Sutherland, W. Breen, J. Murach, J. Patterson","doi":"10.1109/WCPEC.1994.520088","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520088","url":null,"abstract":"The objective of this work is to reduce the cost and improve the quality of terrestrial photovoltaic modules by developing automated high-throughput (5 MW/yr) processes for interconnecting thin silicon solar cells. New low-stress, high-throughput processes have been developed for cell loading, alignment, and inspection, interconnect ribbon handling, flux application, ribbon-to-cell soldering, cell string handling, and I-V testing of assembled cell strings. Both standard thickness (350 /spl mu/m) and thin (200 /spl mu/m) cells have been used to evaluate and refine these processes.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90519058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520211
T. Reindl, W. Kruhler, M. Pauli, J. Muller
For the first time the Si/C interface in poly-Si photovoltaic thin films on graphite substrate is described. The isostatically pressed graphite is covered with a 3-5 /spl mu/m thick amorphous silicon layer which is recrystallized by the ZMR method (zone melting recrystallization by means of a line electron beam). During ZMR the molten silicon penetrates into the graphite pores, while at the interface /spl beta/-SiC particles with a size of 50-1000 nm were formed (TEM, SEM analysis). Furthermore there exists a "reaction zone" where Si, SiC and C are found by electron diffraction. As a consequence the poly-Si layer shows an excellent adhesion to the substrate. Since there is no continuous electrically insulating SiC layer formed, highly boron doped seed layers show an ohmic contact to the graphite. The investigated poly-Si thin films on graphite substrate offer a great potential for photovoltaic application after epitaxy up to 50 /spl mu/m by LPE or CVD.
{"title":"Electrical and structural properties of the Si/C interface in poly-Si thin films on graphite substrates [for PV cells]","authors":"T. Reindl, W. Kruhler, M. Pauli, J. Muller","doi":"10.1109/WCPEC.1994.520211","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520211","url":null,"abstract":"For the first time the Si/C interface in poly-Si photovoltaic thin films on graphite substrate is described. The isostatically pressed graphite is covered with a 3-5 /spl mu/m thick amorphous silicon layer which is recrystallized by the ZMR method (zone melting recrystallization by means of a line electron beam). During ZMR the molten silicon penetrates into the graphite pores, while at the interface /spl beta/-SiC particles with a size of 50-1000 nm were formed (TEM, SEM analysis). Furthermore there exists a \"reaction zone\" where Si, SiC and C are found by electron diffraction. As a consequence the poly-Si layer shows an excellent adhesion to the substrate. Since there is no continuous electrically insulating SiC layer formed, highly boron doped seed layers show an ohmic contact to the graphite. The investigated poly-Si thin films on graphite substrate offer a great potential for photovoltaic application after epitaxy up to 50 /spl mu/m by LPE or CVD.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89612105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.519859
H. Ullal, K. Zweibel, B. von Roedern, R. Noufi, P. Sheldon
Thin-film solar cells based on CdTe, CuInSe/sub 2/ (CIS) and Si-film have made rapid progress in the past 18 months. Total-area efficiencies of 16.8% for CIGS, 15.8% for CdTe, and 13.4% for Si-film on graphite cloth, verified by the National Renewable Energy Laboratory, have been achieved thus far. The performance of thin-film modules for both CdTe and CIS have also improved markedly. Stability data for these emerging technologies is encouraging. Nominal 1-kW CIS and CdTe PV arrays have been installed and are undergoing testing. A 2-MW thin-film CdTe manufacturing plant has been installed, and another 10-MW thin-film CdTe plant is expected to be completed in 1996. A new Thin Film Partnership Program has been initiated to further advance the state-of-art of thin film technologies.
{"title":"Overview of the US DOE/NREL polycrystalline thin-film photovoltaic technologies","authors":"H. Ullal, K. Zweibel, B. von Roedern, R. Noufi, P. Sheldon","doi":"10.1109/WCPEC.1994.519859","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.519859","url":null,"abstract":"Thin-film solar cells based on CdTe, CuInSe/sub 2/ (CIS) and Si-film have made rapid progress in the past 18 months. Total-area efficiencies of 16.8% for CIGS, 15.8% for CdTe, and 13.4% for Si-film on graphite cloth, verified by the National Renewable Energy Laboratory, have been achieved thus far. The performance of thin-film modules for both CdTe and CIS have also improved markedly. Stability data for these emerging technologies is encouraging. Nominal 1-kW CIS and CdTe PV arrays have been installed and are undergoing testing. A 2-MW thin-film CdTe manufacturing plant has been installed, and another 10-MW thin-film CdTe plant is expected to be completed in 1996. A new Thin Film Partnership Program has been initiated to further advance the state-of-art of thin film technologies.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89636606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520654
Thomas Clausen, O. Leistiko
It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500/spl deg/C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved.
{"title":"Schottky barrier enhancement on n-InP solar cell applications","authors":"Thomas Clausen, O. Leistiko","doi":"10.1109/WCPEC.1994.520654","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520654","url":null,"abstract":"It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500/spl deg/C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89307010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520155
J. Berdner, C. Whitaker, H. Wenger, C. Jennings
Electric utilities are beginning to provide off-grid electricity service to customers in lieu of extending uneconomic electric distribution lines. To a large extent, the success of an electric utility off-grid service program is dependent on the utility's ability to provide power systems with excellent reliability and power quality at competitive prices. In December 1992, Pacific Gas and Electric Company (USA) tested the provision of off-grid service by procuring a first-generation PV power system which was installed at a customer's residence in April 1993. This pilot was a technical success, demonstrating that an electric utility can provide reliable, high-quality off-grid power. The project did, however, highlight the need for large cost reductions necessary for significant market penetration. This paper presents a second generation design which attempts to address these issues.
{"title":"Design and cost optimization of utility-grade off-grid power systems","authors":"J. Berdner, C. Whitaker, H. Wenger, C. Jennings","doi":"10.1109/WCPEC.1994.520155","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520155","url":null,"abstract":"Electric utilities are beginning to provide off-grid electricity service to customers in lieu of extending uneconomic electric distribution lines. To a large extent, the success of an electric utility off-grid service program is dependent on the utility's ability to provide power systems with excellent reliability and power quality at competitive prices. In December 1992, Pacific Gas and Electric Company (USA) tested the provision of off-grid service by procuring a first-generation PV power system which was installed at a customer's residence in April 1993. This pilot was a technical success, demonstrating that an electric utility can provide reliable, high-quality off-grid power. The project did, however, highlight the need for large cost reductions necessary for significant market penetration. This paper presents a second generation design which attempts to address these issues.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86528703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520652
L. W. James
Most practical photovoltaic concentrator optics have considerable chromatic aberration. Thus in a two-junction monolithic cell, the pattern of current generation in the high-bandgap junction is different from that in the low-bandgap junction, resulting in an attempted current flow parallel to the junction in the tunnel junction and adjacent layers. Sheet resistivity of these layers is too high to support this lateral current flow, so at each point on the cell, the current is limited to the current generated in the lowest-current junction. This results in a substantial loss in cell output unless the chromatic aberration of the optics is somehow compensated for. Using a software model, the authors have examined the losses caused by chromatic aberration, and have designed two types of concentrator optics which meet the spectral uniformity needs of multijunction solar cells. One is for space applications where weight is an overriding concern. The other is for terrestrial use where cost and a low sensitivity to construction and operating tolerances are paramount.
{"title":"Effects of concentrator chromatic aberration on multi-junction cells","authors":"L. W. James","doi":"10.1109/WCPEC.1994.520652","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520652","url":null,"abstract":"Most practical photovoltaic concentrator optics have considerable chromatic aberration. Thus in a two-junction monolithic cell, the pattern of current generation in the high-bandgap junction is different from that in the low-bandgap junction, resulting in an attempted current flow parallel to the junction in the tunnel junction and adjacent layers. Sheet resistivity of these layers is too high to support this lateral current flow, so at each point on the cell, the current is limited to the current generated in the lowest-current junction. This results in a substantial loss in cell output unless the chromatic aberration of the optics is somehow compensated for. Using a software model, the authors have examined the losses caused by chromatic aberration, and have designed two types of concentrator optics which meet the spectral uniformity needs of multijunction solar cells. One is for space applications where weight is an overriding concern. The other is for terrestrial use where cost and a low sensitivity to construction and operating tolerances are paramount.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86722791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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