Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520648
G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts
The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.
{"title":"Voltage performance of quantum well solar cells in the Al/sub x/Ga/sub 1-x/As/GaAs and the GaAs/In/sub y/Ga/sub 1-y/As material systems","authors":"G. Haarpaintner, J. Barnes, K. Barnham, J. P. Connolly, S. S. Dosarajh, J. Nelson, C. Roberts, C. Button, G. Hili, M. Pate, J. Roberts","doi":"10.1109/WCPEC.1994.520648","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520648","url":null,"abstract":"The open circuit voltage V/sub oc/ and reference voltage V/sub ref/ defined as a measure of the dark current quality, have been studied for a large number of quantum well (QW) solar cells and homogenous control cells. Samples were grown in the Al/sub x/Ga/sub 1-x/As/GaAs and GaAs/In/sub y/Ga/sub 1-y/As material systems. For both combinations, QW solar cells show a better voltage performance in V/sub oc/ and V/sub ref/ than one would expect from a single bandgap solar cell with the same effective absorption bandgap E/sub a/. For the AlGaAs/GaAs cells, V/sub oc/ is related to structural parameters of the QW cells such as the well width L/sub W/ and the Al fraction x. For the strained GaAs/InGaAs cells a relationship is found between V/sub ref/ and the barrier width L/sub B/, which is a dominant parameter in determining strain relaxation and defect formation at a fixed In fraction.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87789159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520190
H.E. Elgamel, A. Rohatgi, Z. Chen, C. Vinckier, J. Nijs, R. Mertens
Conventional (CC) and electromagnetically cast (EMC) multicrystalline silicon solar cells are fabricated following different passivation schemes. Thin layers (/spl sim/100 /spl Aring/) of thermal dry and PECVD SiO/sub 2/ are implemented for providing oxide surface passivation for multicrystalline silicon solar cells. It is found that growing thin layers of thermal dry oxide results in efficient surface passivation. However, for thin PECVD SiO/sub 2/ layers it is necessary to perform, post deposition, low temperature (/spl sim/350/spl deg/C) forming gas anneal in order to observe the surface passivation effect. In addition, hydrogen plasma passivation has been optimized for achieving very deep penetration of atomic hydrogen in the material (>30 /spl mu/m) and as a consequence very effective bulk passivation of multicrystalline silicon solar cells. By combining the thermal dry surface oxide passivation with the hydrogen plasma treatment from the front and the back sides, efficiency of 17% on 4 cm/sup 2/ (independently confirmed by NREL as 16.93%) is realized without any Al gettering. On the other hand, the solar cell efficiencies obtained using thin layers of PECVD SiO/sub 2/ are found to be very comparable to the efficiency of the cells fabricated with thermal dry SiO/sub 2/ layers.
{"title":"Optimal surface and bulk passivation of high efficiency multicrystalline silicon solar cells","authors":"H.E. Elgamel, A. Rohatgi, Z. Chen, C. Vinckier, J. Nijs, R. Mertens","doi":"10.1109/WCPEC.1994.520190","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520190","url":null,"abstract":"Conventional (CC) and electromagnetically cast (EMC) multicrystalline silicon solar cells are fabricated following different passivation schemes. Thin layers (/spl sim/100 /spl Aring/) of thermal dry and PECVD SiO/sub 2/ are implemented for providing oxide surface passivation for multicrystalline silicon solar cells. It is found that growing thin layers of thermal dry oxide results in efficient surface passivation. However, for thin PECVD SiO/sub 2/ layers it is necessary to perform, post deposition, low temperature (/spl sim/350/spl deg/C) forming gas anneal in order to observe the surface passivation effect. In addition, hydrogen plasma passivation has been optimized for achieving very deep penetration of atomic hydrogen in the material (>30 /spl mu/m) and as a consequence very effective bulk passivation of multicrystalline silicon solar cells. By combining the thermal dry surface oxide passivation with the hydrogen plasma treatment from the front and the back sides, efficiency of 17% on 4 cm/sup 2/ (independently confirmed by NREL as 16.93%) is realized without any Al gettering. On the other hand, the solar cell efficiencies obtained using thin layers of PECVD SiO/sub 2/ are found to be very comparable to the efficiency of the cells fabricated with thermal dry SiO/sub 2/ layers.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86369055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520555
J. H. Werner, R. Brendel, H. J. Oueisser
Quantum efficiency measurements showed that more than one electron/hole pair per absorbed photon can be created in a solar cell. Theoretical consideration of this effect leads to new upper radiative efficiency limits for photovoltaic energy conversion. More than 43% efficiency are theoretically possible for cells which are illuminated by the Sun's unconcentrated black body radiation. For sunlight of full concentration, the new limit is above 85%. These values are theoretically possible with a single semiconductor which makes efficient use of carrier multiplication. The theoretical description of radiative recombination in a cell with carrier multiplication leads us also to a novel mathematical description of the saturation current density.
{"title":"New upper efficiency limits for semiconductor solar cells","authors":"J. H. Werner, R. Brendel, H. J. Oueisser","doi":"10.1109/WCPEC.1994.520555","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520555","url":null,"abstract":"Quantum efficiency measurements showed that more than one electron/hole pair per absorbed photon can be created in a solar cell. Theoretical consideration of this effect leads to new upper radiative efficiency limits for photovoltaic energy conversion. More than 43% efficiency are theoretically possible for cells which are illuminated by the Sun's unconcentrated black body radiation. For sunlight of full concentration, the new limit is above 85%. These values are theoretically possible with a single semiconductor which makes efficient use of carrier multiplication. The theoretical description of radiative recombination in a cell with carrier multiplication leads us also to a novel mathematical description of the saturation current density.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86392689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520012
G. Schmid, M. Schubert, H. Brummack, N. Bernhard
In order to provide more specific access to solar cell limitations (and to faults during line production as well) the authors report on space-charge limited time-of-flight (SCL-TOF) studies in the voltage mode, and on forward bias transient switching experiments in 500 nm thick pin structures. Complementing I-V characteristics and quantum yield, both techniques are easy to use and give a clear and reproducible measure of the degradation state of a-Si:H based solar cells. An effective carrier lifetime can be deduced from the extraction time of SCL-TOF. Time and temperature dependent forward current transients show a distinct voltage threshold in the onset of double-injection recombination currents which is related to the built-in voltage of the devices. Enhanced bulk recombination due to light or current induced degradation reduces saturated forward currents and increases the time initially needed for building up space charge in the pin-diodes. Differences upon light-soaking by front or back side illumination have also been investigated.
{"title":"Characterization of amorphous silicon pin solar cells by transient measurement techniques","authors":"G. Schmid, M. Schubert, H. Brummack, N. Bernhard","doi":"10.1109/WCPEC.1994.520012","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520012","url":null,"abstract":"In order to provide more specific access to solar cell limitations (and to faults during line production as well) the authors report on space-charge limited time-of-flight (SCL-TOF) studies in the voltage mode, and on forward bias transient switching experiments in 500 nm thick pin structures. Complementing I-V characteristics and quantum yield, both techniques are easy to use and give a clear and reproducible measure of the degradation state of a-Si:H based solar cells. An effective carrier lifetime can be deduced from the extraction time of SCL-TOF. Time and temperature dependent forward current transients show a distinct voltage threshold in the onset of double-injection recombination currents which is related to the built-in voltage of the devices. Enhanced bulk recombination due to light or current induced degradation reduces saturated forward currents and increases the time initially needed for building up space charge in the pin-diodes. Differences upon light-soaking by front or back side illumination have also been investigated.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86445988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.519805
K. Kaneko, R. Kawamura, T. Misawa
The development research of electromagnetic casting (EMC) for silicon crystal manufacturing technology has been carried out for years with the purpose of providing low cost multicrystalline silicon substrate for solar cells. The EMC technology is a new concept, in which electromagnetic force is utilized to suspend molten metal without contact to crucible wall for melting and solidification of silicon material. The first fundamental research for casting was begun in 1987 with a small round cross-sectioned ingot of 5 cm diameter, and the ingot size was gradually expanded with a square cross-sectioned ingot shape. The research has been carried out for the development of casting technique with an ingot size of 22/spl times/22 cm/sup 2/ cross section, and the furnace construction for producing a 35/spl times/35 cm/sup 2/ cross sectioned ingot has begun. Solar cell conversion efficiencies using EMC ingot crystals are in the range of 13-14%, and the quality of EMC material reaches within that of conventional mold casting material. By the improvements of higher casting speed, higher material quality and larger ingot size of EMC technology, it is expected that a new casting technique for lower cost ingot production will be realized.
{"title":"Present status and future prospects of electromagnetic casting for silicon solar cells","authors":"K. Kaneko, R. Kawamura, T. Misawa","doi":"10.1109/WCPEC.1994.519805","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.519805","url":null,"abstract":"The development research of electromagnetic casting (EMC) for silicon crystal manufacturing technology has been carried out for years with the purpose of providing low cost multicrystalline silicon substrate for solar cells. The EMC technology is a new concept, in which electromagnetic force is utilized to suspend molten metal without contact to crucible wall for melting and solidification of silicon material. The first fundamental research for casting was begun in 1987 with a small round cross-sectioned ingot of 5 cm diameter, and the ingot size was gradually expanded with a square cross-sectioned ingot shape. The research has been carried out for the development of casting technique with an ingot size of 22/spl times/22 cm/sup 2/ cross section, and the furnace construction for producing a 35/spl times/35 cm/sup 2/ cross sectioned ingot has begun. Solar cell conversion efficiencies using EMC ingot crystals are in the range of 13-14%, and the quality of EMC material reaches within that of conventional mold casting material. By the improvements of higher casting speed, higher material quality and larger ingot size of EMC technology, it is expected that a new casting technique for lower cost ingot production will be realized.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89097464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520063
S. Krauter, R. Hanitsch
The actual efficiency of photovoltaic generators is often lower than predicted by standard test conditions (STC) or standard operating conditions (SOC). This is caused mainly by an underestimation of reflection losses and solar cell temperature in the module. The authors describe how, in order to obtain more accurate results in predicting the performance of PV-modules, the parameters influencing incoming (optical parameters) and outgoing power flow (electrical and thermal parameters) were investigated by simulation and some verifying experiments at the University of New South Wales and the Australian desert.
{"title":"Actual optical and thermal performance of PV-modules","authors":"S. Krauter, R. Hanitsch","doi":"10.1109/WCPEC.1994.520063","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520063","url":null,"abstract":"The actual efficiency of photovoltaic generators is often lower than predicted by standard test conditions (STC) or standard operating conditions (SOC). This is caused mainly by an underestimation of reflection losses and solar cell temperature in the module. The authors describe how, in order to obtain more accurate results in predicting the performance of PV-modules, the parameters influencing incoming (optical parameters) and outgoing power flow (electrical and thermal parameters) were investigated by simulation and some verifying experiments at the University of New South Wales and the Australian desert.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80142868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520527
M. Rosmeulen, H.E. Elgamel, J. Poortmans, M.-A. Trauwaert, J. Vanhellemont, J. Nijs
The grains in the multicrystalline materials used nowadays are typically in the order of a mm or more. In the present study the improvement of different materials (Eurosolare material and EMC material from Sumitomo Sitix) is studied. The method of hydrogenation used consists of a hydrogenation in an RF-plasma. The treatment is from the front or back side of the substrate. The beneficial effect of hydrogenation is illustrated by I-V-measurements under AM1.5 illumination, dark I-V measurements and extraction of minority carrier lifetime by the microwave-detected photoconductive decay method. The measurement on the full solar cell reveals only macroscopic and hence lumped consequences of the hydrogenation. Additional insight was gained from measurements on small mesa-type diodes. In this way we can discriminate between diodes with a grain boundary running through the active device and devices fully contained within one grain. This allows one to split the effects of the hydrogenation on the grain boundaries and the intra-grain defects. Dark I-V-measurements and deep-level transient spectroscopy (DLTS) were used to characterize the diodes in the Eurosolare material. The DLTS-spectra revealed a broad band for the diodes with a grain boundary running through them. This peak completely disappeared on samples which received a direct H-plasma treatment from the front side.
{"title":"A study on the microscopical and macroscopical effects of hydrogenation on the performance of multicrystalline solar cells","authors":"M. Rosmeulen, H.E. Elgamel, J. Poortmans, M.-A. Trauwaert, J. Vanhellemont, J. Nijs","doi":"10.1109/WCPEC.1994.520527","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520527","url":null,"abstract":"The grains in the multicrystalline materials used nowadays are typically in the order of a mm or more. In the present study the improvement of different materials (Eurosolare material and EMC material from Sumitomo Sitix) is studied. The method of hydrogenation used consists of a hydrogenation in an RF-plasma. The treatment is from the front or back side of the substrate. The beneficial effect of hydrogenation is illustrated by I-V-measurements under AM1.5 illumination, dark I-V measurements and extraction of minority carrier lifetime by the microwave-detected photoconductive decay method. The measurement on the full solar cell reveals only macroscopic and hence lumped consequences of the hydrogenation. Additional insight was gained from measurements on small mesa-type diodes. In this way we can discriminate between diodes with a grain boundary running through the active device and devices fully contained within one grain. This allows one to split the effects of the hydrogenation on the grain boundaries and the intra-grain defects. Dark I-V-measurements and deep-level transient spectroscopy (DLTS) were used to characterize the diodes in the Eurosolare material. The DLTS-spectra revealed a broad band for the diodes with a grain boundary running through them. This peak completely disappeared on samples which received a direct H-plasma treatment from the front side.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78995542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520179
J. Byrne, Young-Doo Wang, S. Letendre, C. Govindarajalu, R. Nigro, W. Bottenberg
This paper discusses the incorporation of PV as a demand-side management (DSM) tool. The valuation of the benefits provided by PV in a DSM role indicates that it is much closer to commercial viability than was thought from economic analyses focusing exclusively on this technology as a supply-side option. However, in order to realize PV's potential, this technology must be deployed in high-value DSM applications; in particular, applications that promise dispatchable peak-shaving capability. Our analysis of the performance of a prototype system installed by Delmarva Power, indicates that small-scale, commercial customer-sited DSM systems incorporating this technology are approaching competitive cost levels.
{"title":"Deployment of a dispatchable photovoltaic system: technical and economic results","authors":"J. Byrne, Young-Doo Wang, S. Letendre, C. Govindarajalu, R. Nigro, W. Bottenberg","doi":"10.1109/WCPEC.1994.520179","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520179","url":null,"abstract":"This paper discusses the incorporation of PV as a demand-side management (DSM) tool. The valuation of the benefits provided by PV in a DSM role indicates that it is much closer to commercial viability than was thought from economic analyses focusing exclusively on this technology as a supply-side option. However, in order to realize PV's potential, this technology must be deployed in high-value DSM applications; in particular, applications that promise dispatchable peak-shaving capability. Our analysis of the performance of a prototype system installed by Delmarva Power, indicates that small-scale, commercial customer-sited DSM systems incorporating this technology are approaching competitive cost levels.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79008715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.521660
G. Timò, C. Flores
This paper describes a new method, based on room-temperature photoluminescence (PL), for time-saving and nondestructive characterization of thin emitter GaAs/Ge solar cells used for space power applications. It has been shown that the interference phenomena produced between the PL directly escaping from the surface and the PL reflected from the GaAs/Ge interface can provide information on the doping level, thickness and uniformity of the GaAs structure deposited on Ge substrates. This method can be utilized for the quality control of mass-production of GaAs/Ge solar cells for space power applications.
{"title":"Interference effects on room-temperature photoluminescence spectra of GaAs/Ge space solar cells","authors":"G. Timò, C. Flores","doi":"10.1109/WCPEC.1994.521660","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.521660","url":null,"abstract":"This paper describes a new method, based on room-temperature photoluminescence (PL), for time-saving and nondestructive characterization of thin emitter GaAs/Ge solar cells used for space power applications. It has been shown that the interference phenomena produced between the PL directly escaping from the surface and the PL reflected from the GaAs/Ge interface can provide information on the doping level, thickness and uniformity of the GaAs structure deposited on Ge substrates. This method can be utilized for the quality control of mass-production of GaAs/Ge solar cells for space power applications.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80877517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-12-05DOI: 10.1109/WCPEC.1994.520197
C. Khattak, F. Schmid, W. K. Schubert
Developments in heat exchanger method (HEM) technology for production of multicrystalline silicon ingot production have led to growth of larger ingots (55 cm square cross section) with lower costs and reliability in production. A single reusable crucible has been used to produce 16 multicrystalline 33 cm square cross section 40 kg ingots, and capability to produce 44 cm ingots has been demonstrated. Large area solar cells of 16.3% (42 cm/sup 2/) and 15.3% (100 cm/sup 2/) efficiency have been produced without optimization of the material production and the solar cell processing.
{"title":"High-efficiency solar cells using HEM silicon","authors":"C. Khattak, F. Schmid, W. K. Schubert","doi":"10.1109/WCPEC.1994.520197","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520197","url":null,"abstract":"Developments in heat exchanger method (HEM) technology for production of multicrystalline silicon ingot production have led to growth of larger ingots (55 cm square cross section) with lower costs and reliability in production. A single reusable crucible has been used to produce 16 multicrystalline 33 cm square cross section 40 kg ingots, and capability to produce 44 cm ingots has been demonstrated. Large area solar cells of 16.3% (42 cm/sup 2/) and 15.3% (100 cm/sup 2/) efficiency have been produced without optimization of the material production and the solar cell processing.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86165148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：