Pub Date : 1900-01-01DOI: 10.1109/NUSOD.2003.1259058
M. Ryzhii, A. Satou, I. Khmyrova, V. Vyukov, V. Ryzhii, M. Shur
Device models for the HEMT-based THz source are developed: an all-analytical model and a model in which the electron systems in the channel is considered analytically in the linear approximation, whereas the transport of the photogenerated electrons and holes is treated invoking an ensemble Monte Carlo particle simulation. Using these models, the frequency-dependent currents and device responsivity as functions of the structural parameters, gate voltage, and energy of the absorbed optical photons are calculated. An example of the dependences calculated for HEMTs with the fundamental plasma frequency f/sub P/ = 1 THz and different values of the electron mobility /spl mu/ in the channel is performed.
{"title":"Modeling of the excitation of terahertz plasma oscillations in a HEMT by ultrashort optical pulses","authors":"M. Ryzhii, A. Satou, I. Khmyrova, V. Vyukov, V. Ryzhii, M. Shur","doi":"10.1109/NUSOD.2003.1259058","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259058","url":null,"abstract":"Device models for the HEMT-based THz source are developed: an all-analytical model and a model in which the electron systems in the channel is considered analytically in the linear approximation, whereas the transport of the photogenerated electrons and holes is treated invoking an ensemble Monte Carlo particle simulation. Using these models, the frequency-dependent currents and device responsivity as functions of the structural parameters, gate voltage, and energy of the absorbed optical photons are calculated. An example of the dependences calculated for HEMTs with the fundamental plasma frequency f/sub P/ = 1 THz and different values of the electron mobility /spl mu/ in the channel is performed.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"2018 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114698786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/NUSOD.2003.1259047
A. Shulika, I. M. Safonov, P. Ivanov, I. Sukhoivanov, V. Lysak
In this work the interactive environment for distance education for studying the physical basics of semiconductor lasers is presented. Education resource that is part of the interactive environment (IEDE) for distance education corresponds to the first level of the model of Semantic Web markup languages and is a complex of static XML-documents. The original method for building up of IEDE is proposed. The method is founded on integration of static XML-documents and novel simulator LaserCAD III by means JSP. The created IEDE utilizes the proposed method and gives possibilities of practical interactive physics of semiconductor QW lasers. The use of IEDE allows to wide understanding of the working principles and peculiarities of practical utilizing of QW lasers and organize the system of distance education in optoelectronics.
{"title":"LaserCAD III-web-oriented software tool for distance learning in study of semiconductor structure properties","authors":"A. Shulika, I. M. Safonov, P. Ivanov, I. Sukhoivanov, V. Lysak","doi":"10.1109/NUSOD.2003.1259047","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259047","url":null,"abstract":"In this work the interactive environment for distance education for studying the physical basics of semiconductor lasers is presented. Education resource that is part of the interactive environment (IEDE) for distance education corresponds to the first level of the model of Semantic Web markup languages and is a complex of static XML-documents. The original method for building up of IEDE is proposed. The method is founded on integration of static XML-documents and novel simulator LaserCAD III by means JSP. The created IEDE utilizes the proposed method and gives possibilities of practical interactive physics of semiconductor QW lasers. The use of IEDE allows to wide understanding of the working principles and peculiarities of practical utilizing of QW lasers and organize the system of distance education in optoelectronics.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134099120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/NUSOD.2003.1259024
The following topics were dealt with: laser diodes; light emitting diodes; optical modulators; optical amplifiers; photodetectors; self-consistent electro-opto-thermal simulations; material parameters of compound semiconductors; calibration and validation of physical models; analysis of internal device physics; design and optimization of optoelectronic devices; physics of quantum-well, quantum-wire and quantum-dot active regions; 3D simulation of optoelectronic devices; and simulation and design of photonic integrated systems.
{"title":"Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (IEEE Cat. No.03EX726)","authors":"","doi":"10.1109/NUSOD.2003.1259024","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259024","url":null,"abstract":"The following topics were dealt with: laser diodes; light emitting diodes; optical modulators; optical amplifiers; photodetectors; self-consistent electro-opto-thermal simulations; material parameters of compound semiconductors; calibration and validation of physical models; analysis of internal device physics; design and optimization of optoelectronic devices; physics of quantum-well, quantum-wire and quantum-dot active regions; 3D simulation of optoelectronic devices; and simulation and design of photonic integrated systems.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114857552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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