Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1263224
K. K. Lee, J. S. Laird, T. Ohshima, T. Kamiya
In recent years, great interest in ultra-violet (Uv) photodetectors arises due to a wide-ranging of applications including flame sensing [l], missile sensing, biological agent detection, detection of celestial objects, and in the field of particle physics. Currently, silicon (Si) is the favour material used in the fabrication of UV detectors. The maindraw back of Si UV detectors is due to the undesirable response to visible light. For Si photodetector to respond only to UV radiation, special external filters must be employed. Unfortunately, this filtering process reduces the Si responsivity by several orders of magnitude.
{"title":"Validation of SiC photodetectors response","authors":"K. K. Lee, J. S. Laird, T. Ohshima, T. Kamiya","doi":"10.1109/NUSOD.2003.1263224","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1263224","url":null,"abstract":"In recent years, great interest in ultra-violet (Uv) photodetectors arises due to a wide-ranging of applications including flame sensing [l], missile sensing, biological agent detection, detection of celestial objects, and in the field of particle physics. Currently, silicon (Si) is the favour material used in the fabrication of UV detectors. The maindraw back of Si UV detectors is due to the undesirable response to visible light. For Si photodetector to respond only to UV radiation, special external filters must be employed. Unfortunately, this filtering process reduces the Si responsivity by several orders of magnitude.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115120807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259049
J. Shibayama, T. Yamazaki, J. Yamauchi, H. Nakano
Fundamental characteristics of a light-guiding metal line are revealed and discussed through eigenmode and propagating beam analyses. Numerical results show that the propagation loss for a straight metal line decreases as the width of the line is reduced. The propagation loss of a bent metal line is also calculated.
{"title":"Numerical analysis of a light-guiding metal line by the three-dimensional beam-propagation method","authors":"J. Shibayama, T. Yamazaki, J. Yamauchi, H. Nakano","doi":"10.1109/NUSOD.2003.1259049","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259049","url":null,"abstract":"Fundamental characteristics of a light-guiding metal line are revealed and discussed through eigenmode and propagating beam analyses. Numerical results show that the propagation loss for a straight metal line decreases as the width of the line is reduced. The propagation loss of a bent metal line is also calculated.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126780989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259050
J.S. Yang, G. Fan, J.P. Zhu, C. Sun, Y.H. Zhu
A new approach based on the finite element-artificial transmitting boundary method was presented and numerical examples are shown for AOTF's with a tapered acoustical directional coupler on a LiNbO/sub 3/.
{"title":"A numerical method for tunable filter with weighted coupling","authors":"J.S. Yang, G. Fan, J.P. Zhu, C. Sun, Y.H. Zhu","doi":"10.1109/NUSOD.2003.1259050","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259050","url":null,"abstract":"A new approach based on the finite element-artificial transmitting boundary method was presented and numerical examples are shown for AOTF's with a tapered acoustical directional coupler on a LiNbO/sub 3/.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129489344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259040
Y. Yoshida, H. Nishiguchi, M. Sasaki, S. Abe, A. Ohno, M. Miyashita, K. Ono, T. Yagi, E. Omura
Numerical analysis on the influence of the structural asymmetry on the vertical beam quality and optimization of laser characteristics are studied in the paper. Deflection of the vertical beam toward the GaAs substrate is caused by the disagreement of the steady-state optical field between the active region and the window region. The calculated angle of deflection is approximately 1.5 /spl deg/, which agrees with the measurement.
{"title":"Vertical beam quality of 660 nm AlGaInP laser diodes with asymmetric cladding layer","authors":"Y. Yoshida, H. Nishiguchi, M. Sasaki, S. Abe, A. Ohno, M. Miyashita, K. Ono, T. Yagi, E. Omura","doi":"10.1109/NUSOD.2003.1259040","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259040","url":null,"abstract":"Numerical analysis on the influence of the structural asymmetry on the vertical beam quality and optimization of laser characteristics are studied in the paper. Deflection of the vertical beam toward the GaAs substrate is caused by the disagreement of the steady-state optical field between the active region and the window region. The calculated angle of deflection is approximately 1.5 /spl deg/, which agrees with the measurement.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126429470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259026
M.F. Periera, S.-C. Lee, A. Wacker
A nonequilibrium theory for gain in quantum cascade lasers is presented. Optical absorption /spl alpha/ at a given photon energy is calculated from the imaginary part of the optical susceptibility. The occupation functions for each electronic subband are calculated from the diagonal terms in the carrier Green's functions (which are expanded in terms of Wannier-Stark states), and obtained by self-consistent solutions of Dyson equations. Scattering with phonons and impurities are included in the relevant self-energies. The resulting integral equation and gain spectra is shown.
{"title":"Nonequilibrium theory for gain in quantum cascade lasers","authors":"M.F. Periera, S.-C. Lee, A. Wacker","doi":"10.1109/NUSOD.2003.1259026","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259026","url":null,"abstract":"A nonequilibrium theory for gain in quantum cascade lasers is presented. Optical absorption /spl alpha/ at a given photon energy is calculated from the imaginary part of the optical susceptibility. The occupation functions for each electronic subband are calculated from the diagonal terms in the carrier Green's functions (which are expanded in terms of Wannier-Stark states), and obtained by self-consistent solutions of Dyson equations. Scattering with phonons and impurities are included in the relevant self-energies. The resulting integral equation and gain spectra is shown.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131448571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259034
J. Darja, S. Narata, N. Chen, Y. Nakano
With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.
{"title":"Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes","authors":"J. Darja, S. Narata, N. Chen, Y. Nakano","doi":"10.1109/NUSOD.2003.1259034","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259034","url":null,"abstract":"With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132175345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259062
M. Takenaka, Y. Nakano
An FD-BPM have been developed to analyze characteristics of all-optical flip flops based on bistable laser diodes (BLDs) with a directional coupler and an MMI coupler. By combining it with the carrier rate equation, the developed FD-BPM can calculate the static characteristics of these BLDs with relatively small computational resources.
{"title":"Simulation of all-optical flip-flops based on bistable laser diodes with nonlinear couplers","authors":"M. Takenaka, Y. Nakano","doi":"10.1109/NUSOD.2003.1259062","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259062","url":null,"abstract":"An FD-BPM have been developed to analyze characteristics of all-optical flip flops based on bistable laser diodes (BLDs) with a directional coupler and an MMI coupler. By combining it with the carrier rate equation, the developed FD-BPM can calculate the static characteristics of these BLDs with relatively small computational resources.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114690306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259052
M. Koshiba
Using a full modal vector model, the birefringence, dispersion, confinement loss, effective area, and mode field diameter in index-guiding photonic crystal fibers, also called holey fibers, are calculated. Through the real-model simulations, the polarization-dependent dispersion, confinement loss, effective area, and mode field diameter in actual fiber structures are numerically demonstrated.
{"title":"Numerical simulation of photonic crystal fibers","authors":"M. Koshiba","doi":"10.1109/NUSOD.2003.1259052","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259052","url":null,"abstract":"Using a full modal vector model, the birefringence, dispersion, confinement loss, effective area, and mode field diameter in index-guiding photonic crystal fibers, also called holey fibers, are calculated. Through the real-model simulations, the polarization-dependent dispersion, confinement loss, effective area, and mode field diameter in actual fiber structures are numerically demonstrated.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121855088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-01DOI: 10.1109/NUSOD.2003.1259045
M. A. Alsunaidi, M. Al-Absi
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.
{"title":"Effects of electrode spacing on the response of optically controlled MESFETs","authors":"M. A. Alsunaidi, M. Al-Absi","doi":"10.1109/NUSOD.2003.1259045","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259045","url":null,"abstract":"An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128824991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/NUSOD.2003.1259058
M. Ryzhii, A. Satou, I. Khmyrova, V. Vyukov, V. Ryzhii, M. Shur
Device models for the HEMT-based THz source are developed: an all-analytical model and a model in which the electron systems in the channel is considered analytically in the linear approximation, whereas the transport of the photogenerated electrons and holes is treated invoking an ensemble Monte Carlo particle simulation. Using these models, the frequency-dependent currents and device responsivity as functions of the structural parameters, gate voltage, and energy of the absorbed optical photons are calculated. An example of the dependences calculated for HEMTs with the fundamental plasma frequency f/sub P/ = 1 THz and different values of the electron mobility /spl mu/ in the channel is performed.
{"title":"Modeling of the excitation of terahertz plasma oscillations in a HEMT by ultrashort optical pulses","authors":"M. Ryzhii, A. Satou, I. Khmyrova, V. Vyukov, V. Ryzhii, M. Shur","doi":"10.1109/NUSOD.2003.1259058","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259058","url":null,"abstract":"Device models for the HEMT-based THz source are developed: an all-analytical model and a model in which the electron systems in the channel is considered analytically in the linear approximation, whereas the transport of the photogenerated electrons and holes is treated invoking an ensemble Monte Carlo particle simulation. Using these models, the frequency-dependent currents and device responsivity as functions of the structural parameters, gate voltage, and energy of the absorbed optical photons are calculated. An example of the dependences calculated for HEMTs with the fundamental plasma frequency f/sub P/ = 1 THz and different values of the electron mobility /spl mu/ in the channel is performed.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"2018 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114698786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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