Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259031
M. Sheikhi, S. Emamghoreishi, S. Javadpoor, M. Moravvej-Farshi
A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum confined Stark effect (QCSE) is also presented. Scalar Schrodinger equation is solved in the presence of static electric field. The position of heavy hole (hh) exciton peak and its shift (stark shift) is calculated numerically, considering the effect of the number, width and height of quantum wells. Coupling effect between the quantum wells in the calculations was considered for the first time.
{"title":"A new theoretical design optimization of multiple quantum-well electroabsorption modulator","authors":"M. Sheikhi, S. Emamghoreishi, S. Javadpoor, M. Moravvej-Farshi","doi":"10.1109/NUSOD.2003.1259031","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259031","url":null,"abstract":"A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum confined Stark effect (QCSE) is also presented. Scalar Schrodinger equation is solved in the presence of static electric field. The position of heavy hole (hh) exciton peak and its shift (stark shift) is calculated numerically, considering the effect of the number, width and height of quantum wells. Coupling effect between the quantum wells in the calculations was considered for the first time.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120946592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259049
J. Shibayama, T. Yamazaki, J. Yamauchi, H. Nakano
Fundamental characteristics of a light-guiding metal line are revealed and discussed through eigenmode and propagating beam analyses. Numerical results show that the propagation loss for a straight metal line decreases as the width of the line is reduced. The propagation loss of a bent metal line is also calculated.
{"title":"Numerical analysis of a light-guiding metal line by the three-dimensional beam-propagation method","authors":"J. Shibayama, T. Yamazaki, J. Yamauchi, H. Nakano","doi":"10.1109/NUSOD.2003.1259049","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259049","url":null,"abstract":"Fundamental characteristics of a light-guiding metal line are revealed and discussed through eigenmode and propagating beam analyses. Numerical results show that the propagation loss for a straight metal line decreases as the width of the line is reduced. The propagation loss of a bent metal line is also calculated.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126780989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259040
Y. Yoshida, H. Nishiguchi, M. Sasaki, S. Abe, A. Ohno, M. Miyashita, K. Ono, T. Yagi, E. Omura
Numerical analysis on the influence of the structural asymmetry on the vertical beam quality and optimization of laser characteristics are studied in the paper. Deflection of the vertical beam toward the GaAs substrate is caused by the disagreement of the steady-state optical field between the active region and the window region. The calculated angle of deflection is approximately 1.5 /spl deg/, which agrees with the measurement.
{"title":"Vertical beam quality of 660 nm AlGaInP laser diodes with asymmetric cladding layer","authors":"Y. Yoshida, H. Nishiguchi, M. Sasaki, S. Abe, A. Ohno, M. Miyashita, K. Ono, T. Yagi, E. Omura","doi":"10.1109/NUSOD.2003.1259040","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259040","url":null,"abstract":"Numerical analysis on the influence of the structural asymmetry on the vertical beam quality and optimization of laser characteristics are studied in the paper. Deflection of the vertical beam toward the GaAs substrate is caused by the disagreement of the steady-state optical field between the active region and the window region. The calculated angle of deflection is approximately 1.5 /spl deg/, which agrees with the measurement.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126429470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259056
S. Abdulrhmann, M. Yamada
In this paper, computer simulations are employed to explore the optimum operations of semiconductor lasers (SLs) under strong optical feedback (OFB). Various material and structural parameters are used, such as the injection current I, the grating reflectivity R/sub g/, the linewidth enhancement factor /spl alpha/, and a/spl xi//V, where a is the tangential coefficient of the linear gain, /spl xi/ is the field confinement factor and V is the volume of the active region. The simulation is performed based on a new time delay model for SLs, which is applicable under strong OFB. The simulation results show that the lasing operation of SLs under strong OFB is classified into continuous wave (CW), chaos and pulsation depending on the operating conditions. The differences and characteristic features of each lasing operation in the regime of strong OFB are given.
{"title":"Theoretical analysis of the operating state of semiconductor lasers subject to strong optical feedback","authors":"S. Abdulrhmann, M. Yamada","doi":"10.1109/NUSOD.2003.1259056","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259056","url":null,"abstract":"In this paper, computer simulations are employed to explore the optimum operations of semiconductor lasers (SLs) under strong optical feedback (OFB). Various material and structural parameters are used, such as the injection current I, the grating reflectivity R/sub g/, the linewidth enhancement factor /spl alpha/, and a/spl xi//V, where a is the tangential coefficient of the linear gain, /spl xi/ is the field confinement factor and V is the volume of the active region. The simulation is performed based on a new time delay model for SLs, which is applicable under strong OFB. The simulation results show that the lasing operation of SLs under strong OFB is classified into continuous wave (CW), chaos and pulsation depending on the operating conditions. The differences and characteristic features of each lasing operation in the regime of strong OFB are given.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115505565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259034
J. Darja, S. Narata, N. Chen, Y. Nakano
With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.
{"title":"Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes","authors":"J. Darja, S. Narata, N. Chen, Y. Nakano","doi":"10.1109/NUSOD.2003.1259034","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259034","url":null,"abstract":"With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132175345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259026
M.F. Periera, S.-C. Lee, A. Wacker
A nonequilibrium theory for gain in quantum cascade lasers is presented. Optical absorption /spl alpha/ at a given photon energy is calculated from the imaginary part of the optical susceptibility. The occupation functions for each electronic subband are calculated from the diagonal terms in the carrier Green's functions (which are expanded in terms of Wannier-Stark states), and obtained by self-consistent solutions of Dyson equations. Scattering with phonons and impurities are included in the relevant self-energies. The resulting integral equation and gain spectra is shown.
{"title":"Nonequilibrium theory for gain in quantum cascade lasers","authors":"M.F. Periera, S.-C. Lee, A. Wacker","doi":"10.1109/NUSOD.2003.1259026","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259026","url":null,"abstract":"A nonequilibrium theory for gain in quantum cascade lasers is presented. Optical absorption /spl alpha/ at a given photon energy is calculated from the imaginary part of the optical susceptibility. The occupation functions for each electronic subband are calculated from the diagonal terms in the carrier Green's functions (which are expanded in terms of Wannier-Stark states), and obtained by self-consistent solutions of Dyson equations. Scattering with phonons and impurities are included in the relevant self-energies. The resulting integral equation and gain spectra is shown.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131448571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259062
M. Takenaka, Y. Nakano
An FD-BPM have been developed to analyze characteristics of all-optical flip flops based on bistable laser diodes (BLDs) with a directional coupler and an MMI coupler. By combining it with the carrier rate equation, the developed FD-BPM can calculate the static characteristics of these BLDs with relatively small computational resources.
{"title":"Simulation of all-optical flip-flops based on bistable laser diodes with nonlinear couplers","authors":"M. Takenaka, Y. Nakano","doi":"10.1109/NUSOD.2003.1259062","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259062","url":null,"abstract":"An FD-BPM have been developed to analyze characteristics of all-optical flip flops based on bistable laser diodes (BLDs) with a directional coupler and an MMI coupler. By combining it with the carrier rate equation, the developed FD-BPM can calculate the static characteristics of these BLDs with relatively small computational resources.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114690306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259052
M. Koshiba
Using a full modal vector model, the birefringence, dispersion, confinement loss, effective area, and mode field diameter in index-guiding photonic crystal fibers, also called holey fibers, are calculated. Through the real-model simulations, the polarization-dependent dispersion, confinement loss, effective area, and mode field diameter in actual fiber structures are numerically demonstrated.
{"title":"Numerical simulation of photonic crystal fibers","authors":"M. Koshiba","doi":"10.1109/NUSOD.2003.1259052","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259052","url":null,"abstract":"Using a full modal vector model, the birefringence, dispersion, confinement loss, effective area, and mode field diameter in index-guiding photonic crystal fibers, also called holey fibers, are calculated. Through the real-model simulations, the polarization-dependent dispersion, confinement loss, effective area, and mode field diameter in actual fiber structures are numerically demonstrated.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121855088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-01DOI: 10.1109/NUSOD.2003.1259045
M. A. Alsunaidi, M. Al-Absi
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.
{"title":"Effects of electrode spacing on the response of optically controlled MESFETs","authors":"M. A. Alsunaidi, M. Al-Absi","doi":"10.1109/NUSOD.2003.1259045","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259045","url":null,"abstract":"An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128824991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/NUSOD.2003.1259028
K. Tanaka, N. Kotera, H. Nakamura
Nonparabolic subband structure of InGaAs/InAlAs quantum wells (QWs) was studied theoretically and experimentally. In this paper, nonparabolic effective masses of electrons and band offset of InAlAs barriers were experimentally deduced from eigen-states of conduction subbands confined within the two-dimensional InGaAs QWs. As the dispersion relations for electron, light hole and hole subbands were obtained using the envelope function approximation taking into account band nonparabolicity, a simple way to design was proposed.
{"title":"Application of band theory to experimental eigen-state energies of un-doped InGaAs quantum wells lattice-matched to InP","authors":"K. Tanaka, N. Kotera, H. Nakamura","doi":"10.1109/NUSOD.2003.1259028","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259028","url":null,"abstract":"Nonparabolic subband structure of InGaAs/InAlAs quantum wells (QWs) was studied theoretically and experimentally. In this paper, nonparabolic effective masses of electrons and band offset of InAlAs barriers were experimentally deduced from eigen-states of conduction subbands confined within the two-dimensional InGaAs QWs. As the dispersion relations for electron, light hole and hole subbands were obtained using the envelope function approximation taking into account band nonparabolicity, a simple way to design was proposed.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117176040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：