Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259046
M. Nadir
A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.
{"title":"Simulating vertical-cavity surface-emitting lasers based on GaInNAs-GaAs multi-quantum-wells","authors":"M. Nadir","doi":"10.1109/NUSOD.2003.1259046","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259046","url":null,"abstract":"A multi-quantum-well laser Ga/sub x/In/sub 1-x/N/sub 1-y/As/sub y//GaAs with distributed Bragg reflector (DBR) mirrors based on n-doped and p-doped Al/sub 0.143/Ga/sub 0.857/As and AlAs is simulated. A change in current distribution is observed by a modification in the structure (diameter of lower cylinder portion) of the VCSEL. The optical gain effect on the change of real index is also computed for different N composition. The self-consistent modelling software PICS3D[PICS3D] is used in this work.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122636448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259057
G. Slavcheva, J. Arnold
The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 /spl mu/m long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (/spl lambda/ = 1.5 /spl mu/m) is launched.
{"title":"FDTD simulation of the nonlinear gain dynamics and modulation response of a semiconductor microcavity","authors":"G. Slavcheva, J. Arnold","doi":"10.1109/NUSOD.2003.1259057","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259057","url":null,"abstract":"The method of FDTD solution of the full-wave vectorial Maxwell-Bloch equations for a two-level quantum system in 1D is applied to investigate the nonlinear gain spatio-temporal dynamics in an active semiconductor microcavity. The test structure used was 15 /spl mu/m long active medium slab (GaAs) at the left boundary of which a continuous-wave sinusoid source field (after smooth turn-on within 5 periods) at the atomic transition frequency (/spl lambda/ = 1.5 /spl mu/m) is launched.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121002256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259054
V. Lysak, H. Kawaguchi, T. Katayama, I. Sukhoivanov
A numerical model for calculation of the steady state gain properties for asymmetrical multiple quantum-well travelling wave semiconductor optical amplifiers (AMQW TW SOAs) has been newly developed. This model consists from the rate equation system for carriers in each quantum well and integrated gain model. Using this model the gain spectra and saturation characteristics for a 6 AQW TW SOA is calculated. The results show the AMQW SOA has a wide bandwidth of about 137 nm and a large saturation power of -8.8 dBm at 202 mA.
{"title":"Amplification and saturation properties of asymmetrical multiple quantum-well traveling wave semiconductor optical amplifiers","authors":"V. Lysak, H. Kawaguchi, T. Katayama, I. Sukhoivanov","doi":"10.1109/NUSOD.2003.1259054","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259054","url":null,"abstract":"A numerical model for calculation of the steady state gain properties for asymmetrical multiple quantum-well travelling wave semiconductor optical amplifiers (AMQW TW SOAs) has been newly developed. This model consists from the rate equation system for carriers in each quantum well and integrated gain model. Using this model the gain spectra and saturation characteristics for a 6 AQW TW SOA is calculated. The results show the AMQW SOA has a wide bandwidth of about 137 nm and a large saturation power of -8.8 dBm at 202 mA.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121401632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1263226
J. H. Kim, C. Son, Young Il Kim, Y. Byun, Y. Jhon, Geok Lee, D. Woo, S. H. Kim
Some of all-optical signal processing techniques using all-optical logic gates based on semiconductor optical amplifiers have been demonstrated at 10 Gbps. The primary techniques for all-optical signal processing such as label swapping and data extraction are successfully demonstrated using VPI simulation tool lntroductlon As the speed of telecommunication systems increases and reaches the limit of electronic devices, the demands for all-optical signal processing techniques such as label or packet switching, decision making, regenerating, and basic or complex computing are rapidly increasing. Current communication systems usually require various ailoptical logic gates such as AND, OR, XOR, NAND, NOR, and XNOR. However, their applications are very limited to small numbers [ l , 21. Also, logic implementation techniques are usually limited to mach-zehnder interferometer and fiber-based devices while our logic gates are mostly based on semiconductor optical amplifiers (SOA?. ) In this paper, the primary techniques of all-optical label swapping and data extraction using semiconductor optical amplifiers are demonstrated at 10 Gbps using VPI simulation tool. Operation principles In this paper, to implement the all-optical label swapping and data extraction among various alloptical signal processing techniques, only one mechanism that is cross-gain modulation (XGM) of SOAs is used. To realize the all-optical label swapping, an all-optical XOR gate using two SOAs is utilized. Operation principle of the XOR gate is shown in Fig. 1 [3].
{"title":"All-optical signal processing using semiconductor optical amplifier based logic gates","authors":"J. H. Kim, C. Son, Young Il Kim, Y. Byun, Y. Jhon, Geok Lee, D. Woo, S. H. Kim","doi":"10.1109/NUSOD.2003.1263226","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1263226","url":null,"abstract":"Some of all-optical signal processing techniques using all-optical logic gates based on semiconductor optical amplifiers have been demonstrated at 10 Gbps. The primary techniques for all-optical signal processing such as label swapping and data extraction are successfully demonstrated using VPI simulation tool lntroductlon As the speed of telecommunication systems increases and reaches the limit of electronic devices, the demands for all-optical signal processing techniques such as label or packet switching, decision making, regenerating, and basic or complex computing are rapidly increasing. Current communication systems usually require various ailoptical logic gates such as AND, OR, XOR, NAND, NOR, and XNOR. However, their applications are very limited to small numbers [ l , 21. Also, logic implementation techniques are usually limited to mach-zehnder interferometer and fiber-based devices while our logic gates are mostly based on semiconductor optical amplifiers (SOA?. ) In this paper, the primary techniques of all-optical label swapping and data extraction using semiconductor optical amplifiers are demonstrated at 10 Gbps using VPI simulation tool. Operation principles In this paper, to implement the all-optical label swapping and data extraction among various alloptical signal processing techniques, only one mechanism that is cross-gain modulation (XGM) of SOAs is used. To realize the all-optical label swapping, an all-optical XOR gate using two SOAs is utilized. Operation principle of the XOR gate is shown in Fig. 1 [3].","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124408855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259037
H. Wenzel
The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 /spl mu/m is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.
{"title":"Designing high-power single-frequency lasers","authors":"H. Wenzel","doi":"10.1109/NUSOD.2003.1259037","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259037","url":null,"abstract":"The development of GaAs-based ridge waveguide (RW) DFB lasers emitting below 1 /spl mu/m is presented in the paper. The major modelling aspects including the device structure, fabrication procedure and experimental results are discussed.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134118418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259053
N. Cinosi, J. Sarma, D. Mencarelli, F. Causa
In this paper, airy functions to represent Bessel functions of large index order are applied. The eigenvalue wave equation is then reduced to a polynomial equation. The complex roots of such a polynomial are the sought whispering gallery modes (WGM) resonant frequencies which in effect, provide the Q-factors and determine the WGM field profiles. Particular emphasis has been given to deriving the spectral and spatial distribution of WGMs, along the Q-factors of the resonators. These properties are essential to characterise circular semiconductor lasers, which use WGMs as modal emission.
{"title":"Analysis of whispering gallery mode resonators by using airy functions","authors":"N. Cinosi, J. Sarma, D. Mencarelli, F. Causa","doi":"10.1109/NUSOD.2003.1259053","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259053","url":null,"abstract":"In this paper, airy functions to represent Bessel functions of large index order are applied. The eigenvalue wave equation is then reduced to a polynomial equation. The complex roots of such a polynomial are the sought whispering gallery modes (WGM) resonant frequencies which in effect, provide the Q-factors and determine the WGM field profiles. Particular emphasis has been given to deriving the spectral and spatial distribution of WGMs, along the Q-factors of the resonators. These properties are essential to characterise circular semiconductor lasers, which use WGMs as modal emission.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131793690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259044
J. Geske, J. Piprek
Numerical laser simulation of new active region design which provides more uniform gain using carrier blocking layers between the quantum wells is presented. The laser model includes calculations of optical carrier generation, carrier transport from the absorber layers to the quantum wells, quantum well gain, and optical field. The model is designed to compensate the non-uniform optical pumping of the quantum wells.
{"title":"Uniform optical pumping design for 1.55 /spl mu/m VCSELs","authors":"J. Geske, J. Piprek","doi":"10.1109/NUSOD.2003.1259044","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259044","url":null,"abstract":"Numerical laser simulation of new active region design which provides more uniform gain using carrier blocking layers between the quantum wells is presented. The laser model includes calculations of optical carrier generation, carrier transport from the absorber layers to the quantum wells, quantum well gain, and optical field. The model is designed to compensate the non-uniform optical pumping of the quantum wells.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133987771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259055
E. Avrutin, J. Arnold, V. Nikolaev, C. Xing, D. Gallagher
We discuss current and potential problems in theory and numerical modelling of monolithic mode-locked semiconductor lasers, present some recent advances in the field and compare advantages and shortcomings of time- and time-frequency domain modelling approaches.
{"title":"Modelling monolithic mode-locked semiconductor lasers","authors":"E. Avrutin, J. Arnold, V. Nikolaev, C. Xing, D. Gallagher","doi":"10.1109/NUSOD.2003.1259055","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259055","url":null,"abstract":"We discuss current and potential problems in theory and numerical modelling of monolithic mode-locked semiconductor lasers, present some recent advances in the field and compare advantages and shortcomings of time- and time-frequency domain modelling approaches.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"26 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132394259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259031
M. Sheikhi, S. Emamghoreishi, S. Javadpoor, M. Moravvej-Farshi
A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum confined Stark effect (QCSE) is also presented. Scalar Schrodinger equation is solved in the presence of static electric field. The position of heavy hole (hh) exciton peak and its shift (stark shift) is calculated numerically, considering the effect of the number, width and height of quantum wells. Coupling effect between the quantum wells in the calculations was considered for the first time.
{"title":"A new theoretical design optimization of multiple quantum-well electroabsorption modulator","authors":"M. Sheikhi, S. Emamghoreishi, S. Javadpoor, M. Moravvej-Farshi","doi":"10.1109/NUSOD.2003.1259031","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259031","url":null,"abstract":"A numerical model for computing electroabsorption in InAlAs/InGaAs multiple quantum well based on a matrix method is presented. The model is made simple to make it suitable as fast-design-tool for multiple quantum well electroabsorption modulators. A complete and self-consistent model of the quantum confined Stark effect (QCSE) is also presented. Scalar Schrodinger equation is solved in the presence of static electric field. The position of heavy hole (hh) exciton peak and its shift (stark shift) is calculated numerically, considering the effect of the number, width and height of quantum wells. Coupling effect between the quantum wells in the calculations was considered for the first time.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120946592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259056
S. Abdulrhmann, M. Yamada
In this paper, computer simulations are employed to explore the optimum operations of semiconductor lasers (SLs) under strong optical feedback (OFB). Various material and structural parameters are used, such as the injection current I, the grating reflectivity R/sub g/, the linewidth enhancement factor /spl alpha/, and a/spl xi//V, where a is the tangential coefficient of the linear gain, /spl xi/ is the field confinement factor and V is the volume of the active region. The simulation is performed based on a new time delay model for SLs, which is applicable under strong OFB. The simulation results show that the lasing operation of SLs under strong OFB is classified into continuous wave (CW), chaos and pulsation depending on the operating conditions. The differences and characteristic features of each lasing operation in the regime of strong OFB are given.
{"title":"Theoretical analysis of the operating state of semiconductor lasers subject to strong optical feedback","authors":"S. Abdulrhmann, M. Yamada","doi":"10.1109/NUSOD.2003.1259056","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259056","url":null,"abstract":"In this paper, computer simulations are employed to explore the optimum operations of semiconductor lasers (SLs) under strong optical feedback (OFB). Various material and structural parameters are used, such as the injection current I, the grating reflectivity R/sub g/, the linewidth enhancement factor /spl alpha/, and a/spl xi//V, where a is the tangential coefficient of the linear gain, /spl xi/ is the field confinement factor and V is the volume of the active region. The simulation is performed based on a new time delay model for SLs, which is applicable under strong OFB. The simulation results show that the lasing operation of SLs under strong OFB is classified into continuous wave (CW), chaos and pulsation depending on the operating conditions. The differences and characteristic features of each lasing operation in the regime of strong OFB are given.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115505565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：