Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259032
B. Jacob, M. Klemenc, C. Petit, A. Witzig, W. Fichtner
In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter. A transfer matrix method based model has been implemented to compute the optical fields within the device. The electrical simulation was performed using ISE TCAD simulation package.
{"title":"TCAD simulation of photodetector spectral response","authors":"B. Jacob, M. Klemenc, C. Petit, A. Witzig, W. Fichtner","doi":"10.1109/NUSOD.2003.1259032","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259032","url":null,"abstract":"In this paper, the spectral responsivity of a photodetector is determined by extracting optical parameters (refractive index and extinction coefficients) from the reflectivity measurement data and by treating the surface recombination velocity as a free parameter. A transfer matrix method based model has been implemented to compute the optical fields within the device. The electrical simulation was performed using ISE TCAD simulation package.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129659917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259035
G. Hatakoshi, M. Ishikawa
Thermal response characteristics ot output power in semiconductor lasers were analyzed. Refractive index changes caused by a rise in temperature had a significant effect on the output-power stability under pulsed operation for lasers with a weakly confined guided-mode.
{"title":"Analysis of thermal response characteristics of semiconductor by self-consistent electro-opto-thermal simulation","authors":"G. Hatakoshi, M. Ishikawa","doi":"10.1109/NUSOD.2003.1259035","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259035","url":null,"abstract":"Thermal response characteristics ot output power in semiconductor lasers were analyzed. Refractive index changes caused by a rise in temperature had a significant effect on the output-power stability under pulsed operation for lasers with a weakly confined guided-mode.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"23 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120920852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259060
N. Trenado, J. Henness, L. Johansson, J. Hutchinson, L.A. Coldoren, J. Piprek
A three-dimensional (3D) simulation of the photonic components within an integrated optical-electrical-optical wavelength converter is presented. The converter design includes a 50 /spl mu/m long waveguide photodiode (WPD) which detects the incoming signal at any wavelength of the C band, e.g. at /spl lambda//sub in/ = 1530 nm. The optical signal is converted into an electrical signal that directly modulates a sampled-grating distributed Bragg-reflector (SGDBR) laser diode which is integrated with a semiconductor optical amplifier (SOA) for signal enhancement. The SGDBR laser can be tuned to emit at any wavelength of the C band, e.g., at /spl lambda//sub out/ = 1550 nm. The epitaxial structure of the different components is found to be similar. An offset multi-quantum-well (MQW) active region is grown on top of the waveguide region. A ridge waveguide structure is etched through the MQW region. Passive device sections are formed by etching off the MQWs completely.
{"title":"3D simulation of integrated optoelectronic devices","authors":"N. Trenado, J. Henness, L. Johansson, J. Hutchinson, L.A. Coldoren, J. Piprek","doi":"10.1109/NUSOD.2003.1259060","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259060","url":null,"abstract":"A three-dimensional (3D) simulation of the photonic components within an integrated optical-electrical-optical wavelength converter is presented. The converter design includes a 50 /spl mu/m long waveguide photodiode (WPD) which detects the incoming signal at any wavelength of the C band, e.g. at /spl lambda//sub in/ = 1530 nm. The optical signal is converted into an electrical signal that directly modulates a sampled-grating distributed Bragg-reflector (SGDBR) laser diode which is integrated with a semiconductor optical amplifier (SOA) for signal enhancement. The SGDBR laser can be tuned to emit at any wavelength of the C band, e.g., at /spl lambda//sub out/ = 1550 nm. The epitaxial structure of the different components is found to be similar. An offset multi-quantum-well (MQW) active region is grown on top of the waveguide region. A ridge waveguide structure is etched through the MQW region. Passive device sections are formed by etching off the MQWs completely.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127371080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259061
L. Schneider, M. Pfeiffer, A. Witzig, M. Streiff, W. Fichtner
A simulation scheme which fully reflects the 3D nature of tunable multi-section distributed Bragg reflector lasers is presented. In the simulator used for this work, 3D charge carrier transport is modeled by the drift-diffusion and Poisson equations and temperature is included by balance formalism.
{"title":"Full-3D simulation of tunable multi-section DBR lasers","authors":"L. Schneider, M. Pfeiffer, A. Witzig, M. Streiff, W. Fichtner","doi":"10.1109/NUSOD.2003.1259061","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259061","url":null,"abstract":"A simulation scheme which fully reflects the 3D nature of tunable multi-section distributed Bragg reflector lasers is presented. In the simulator used for this work, 3D charge carrier transport is modeled by the drift-diffusion and Poisson equations and temperature is included by balance formalism.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"108 18","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131746090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259030
M. Peschke, T. Knoedl, B. Stegmueller
We present detailed theoretical and experimental investigations on gain and absorption spectra of multi-type AlGaInAs QW structures in the 1.3 /spl mu/m wavelength regime. Such QW combination offer the possibility of efficient forward and reverse operation, e.g. as required for monolithically integrated laser-modulator devices. Measurement results are in good agreement with theoretical predictions, achieving a basic modal absorption as low as 60 cm/sup -1/, a maximum absorption change of 100 cm&/sup -1/V/sup -1/ and a DFB threshold current of 17 mA at room temperature. With the developed procedure and extracted parameters, a powerful tool is available to optimize the static gain and absorption modulation of single-and multi-type AlGaInAs QWs.
{"title":"Simulation and design of an active MQW layer with high static gain and absorption modulation","authors":"M. Peschke, T. Knoedl, B. Stegmueller","doi":"10.1109/NUSOD.2003.1259030","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259030","url":null,"abstract":"We present detailed theoretical and experimental investigations on gain and absorption spectra of multi-type AlGaInAs QW structures in the 1.3 /spl mu/m wavelength regime. Such QW combination offer the possibility of efficient forward and reverse operation, e.g. as required for monolithically integrated laser-modulator devices. Measurement results are in good agreement with theoretical predictions, achieving a basic modal absorption as low as 60 cm/sup -1/, a maximum absorption change of 100 cm&/sup -1/V/sup -1/ and a DFB threshold current of 17 mA at room temperature. With the developed procedure and extracted parameters, a powerful tool is available to optimize the static gain and absorption modulation of single-and multi-type AlGaInAs QWs.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130135397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1263225
J. S. Laird, T. Hirao, S. Onoda, T. Kamiya
Abstrocr- The high-speed characteristics of communication p*i-n+ photodiodes mcluding frequency respoare and responsMty are both degraded by high radiation fields in space. Deep levels generated by high-energy particles decrease the signal strength and reduce the generation reambination ldetime and dark curreui, reducing the signal-to noiae ratio (SNR), The use of lower temperatures as a means of restoring the SMI has been proposed in previous studies. Here we investigate the possibility theoretically using Technology CAD simulation.
{"title":"Degradation of Si high-speed photodiodes by irradiation induced defects and restoration at low temperature","authors":"J. S. Laird, T. Hirao, S. Onoda, T. Kamiya","doi":"10.1109/NUSOD.2003.1263225","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1263225","url":null,"abstract":"Abstrocr- The high-speed characteristics of communication p*i-n+ photodiodes mcluding frequency respoare and responsMty are both degraded by high radiation fields in space. Deep levels generated by high-energy particles decrease the signal strength and reduce the generation reambination ldetime and dark curreui, reducing the signal-to noiae ratio (SNR), The use of lower temperatures as a means of restoring the SMI has been proposed in previous studies. Here we investigate the possibility theoretically using Technology CAD simulation.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"263 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122079334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259033
G. Hatakoshi
Device simulators for optical semiconductor devices have been constructed. Optical, electrical and thermal characteristics can be analyzed on standard personal computers with a graphical user interface providing easy operation for general-purpose use. Numerical simulation technology plays an important role in the development of optical semiconductor devices such as semiconductor lasers and LEDs.
{"title":"Optical, electrical and thermal simulation for semiconductor lasers and light-emitting diodes","authors":"G. Hatakoshi","doi":"10.1109/NUSOD.2003.1259033","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259033","url":null,"abstract":"Device simulators for optical semiconductor devices have been constructed. Optical, electrical and thermal characteristics can be analyzed on standard personal computers with a graphical user interface providing easy operation for general-purpose use. Numerical simulation technology plays an important role in the development of optical semiconductor devices such as semiconductor lasers and LEDs.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130473815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1263227
A. R. Bahrampu, P. Jamali, M. Mahjoej
{"title":"Investigation of relaxation-oscillation behaviour of erbium doped fiber lasers by semiclassical theory","authors":"A. R. Bahrampu, P. Jamali, M. Mahjoej","doi":"10.1109/NUSOD.2003.1263227","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1263227","url":null,"abstract":"","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129866372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259036
V. Laino, M. Pfeiffer, A. Witzig, W. Fichtner
A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical optimization tools. The device under investigation is a molecular beam epitaxy (MBE) grown InGaAs/AlGaAs narrow stripe laser with graded-index carrier confinement (GRICC) and a single quantum-well (SQW) active region.
{"title":"A TCAD calibration methodology","authors":"V. Laino, M. Pfeiffer, A. Witzig, W. Fichtner","doi":"10.1109/NUSOD.2003.1259036","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259036","url":null,"abstract":"A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical optimization tools. The device under investigation is a molecular beam epitaxy (MBE) grown InGaAs/AlGaAs narrow stripe laser with graded-index carrier confinement (GRICC) and a single quantum-well (SQW) active region.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127344395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-14DOI: 10.1109/NUSOD.2003.1259039
U. Bandelow, H. Gajewski, R. Hunlich
A thermodynamic designed energy model for semiconductor devices is discussed. A system of evolution equations based on an expression for the density of the free energy is derived. First principles such as entropy maximum principle and the principle of partial local equilibrium are applied. The free energy is assumed as the sum of the internal free energy and the electrostatic field energy. A 1.55 /spl mu/m RW MQW laser is used in the simulations.
讨论了半导体器件的热力学设计能量模型。在自由能密度表达式的基础上，导出了一套演化方程。应用了熵极大原理和局部局部平衡原理等第一性原理。自由能被假定为内部自由能和静电场能量的总和。模拟中使用了1.55 /spl μ m RW MQW激光器。
{"title":"Thermodynamic designed energy model","authors":"U. Bandelow, H. Gajewski, R. Hunlich","doi":"10.1109/NUSOD.2003.1259039","DOIUrl":"https://doi.org/10.1109/NUSOD.2003.1259039","url":null,"abstract":"A thermodynamic designed energy model for semiconductor devices is discussed. A system of evolution equations based on an expression for the density of the free energy is derived. First principles such as entropy maximum principle and the principle of partial local equilibrium are applied. The free energy is assumed as the sum of the internal free energy and the electrostatic field energy. A 1.55 /spl mu/m RW MQW laser is used in the simulations.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121485471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：