The influence of domain walls on magneto-optic effect of the double-layered films is investigated. A method to cut the domain walls into a set of parallel thin-limit layers is introduced.Thus, the problems of light reflected by and transmitting through the domain walls are equivalent to those by thin-limit multilayer systems. The equation of Kerr rotation angle induced by domain walls is deduced. It is found that the Kerr rotation angle depends on the thickness of domain walls in the double-layered films.
{"title":"Magneto-optic Kerr effect of domain walls in ferromagnetic double-layered films","authors":"P. Zhu, Zhong Xu, Yong Hu, G. Lin, Z. Lee","doi":"10.1117/12.150676","DOIUrl":"https://doi.org/10.1117/12.150676","url":null,"abstract":"The influence of domain walls on magneto-optic effect of the double-layered films is investigated. A method to cut the domain walls into a set of parallel thin-limit layers is introduced.Thus, the problems of light reflected by and transmitting through the domain walls are equivalent to those by thin-limit multilayer systems. The equation of Kerr rotation angle induced by domain walls is deduced. It is found that the Kerr rotation angle depends on the thickness of domain walls in the double-layered films.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129088670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lingbing Chen, You-yuan Zhao, Jianzhao Li, Fuming Li
Persistent spectral hole burning (PSHB) was performed for several porphyrin molecules imbedded in polymer hosts and rare-earth ion Sm2+ doped in BaFCl0.5Br0.5 matrix. Power saturation and broadening effects for hole depth and width were observed. The dynamical process of hole formation was measured and explanation by population rate equations was given. Quantum efficiency of photochemical hole burning was investigated. For BaFCl0.5Br0.5:Sm2+ the capacity of data storage was estimated according to the result of multiple hole burning.
{"title":"Persistent spectral hole-burning study on some organic and inorganic materials","authors":"Lingbing Chen, You-yuan Zhao, Jianzhao Li, Fuming Li","doi":"10.1117/12.150653","DOIUrl":"https://doi.org/10.1117/12.150653","url":null,"abstract":"Persistent spectral hole burning (PSHB) was performed for several porphyrin molecules imbedded in polymer hosts and rare-earth ion Sm2+ doped in BaFCl0.5Br0.5 matrix. Power saturation and broadening effects for hole depth and width were observed. The dynamical process of hole formation was measured and explanation by population rate equations was given. Quantum efficiency of photochemical hole burning was investigated. For BaFCl0.5Br0.5:Sm2+ the capacity of data storage was estimated according to the result of multiple hole burning.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122463076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Al and Ga-substituted Bi:DyIG films have been prepared on glass substrates by pyrolysis method. The magnetic and magneto-optical properties of Al or Ga-substituted garnet films have been investigated in detail. Al or Ga-substituted Bi:DyIG films have high coercive force and good Faraday hysteresis loops. At the wavelength of 510 nm, the Faraday rotation angle was about 8 degree(s)/micrometers for the optimum Al or Ga content of 1 or 0.7, respectively. For optimum Al and Ga content, the crystallization temperatures were about 700 and 675 degree(s)C, respectively. X-ray diffraction pattern showed that the film was polycrystalline garnet phase without preferred crystal orientation.
{"title":"Study on magnetic and magneto-optical properties of Bi, Al (or Ga)-substituted garnet films for magneto-optical recording","authors":"Yongzong Zhou, D. Shen, F. Gan","doi":"10.1117/12.150642","DOIUrl":"https://doi.org/10.1117/12.150642","url":null,"abstract":"Al and Ga-substituted Bi:DyIG films have been prepared on glass substrates by pyrolysis method. The magnetic and magneto-optical properties of Al or Ga-substituted garnet films have been investigated in detail. Al or Ga-substituted Bi:DyIG films have high coercive force and good Faraday hysteresis loops. At the wavelength of 510 nm, the Faraday rotation angle was about 8 degree(s)/micrometers for the optimum Al or Ga content of 1 or 0.7, respectively. For optimum Al and Ga content, the crystallization temperatures were about 700 and 675 degree(s)C, respectively. X-ray diffraction pattern showed that the film was polycrystalline garnet phase without preferred crystal orientation.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133109513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper proposes a new interferometer to measure the roughness of optical disk substrates, which applies the principle of shearing interferometry and uses a Faraday modulator to detect the phase between two polarized beams. The instrument can produce surface probe and other statistical data with a height sensitivity of 2 nm and a lateral resolution of 1.2 micrometers . It has excellent stability even under vibration conditions, and rapid and noncontact measurements can be made without a special reference surface.
{"title":"Measurement of surface roughness of optical disk substrates by differential polarization interferometry","authors":"Wendong Xu, Xishan Li","doi":"10.1117/12.150655","DOIUrl":"https://doi.org/10.1117/12.150655","url":null,"abstract":"This paper proposes a new interferometer to measure the roughness of optical disk substrates, which applies the principle of shearing interferometry and uses a Faraday modulator to detect the phase between two polarized beams. The instrument can produce surface probe and other statistical data with a height sensitivity of 2 nm and a lateral resolution of 1.2 micrometers . It has excellent stability even under vibration conditions, and rapid and noncontact measurements can be made without a special reference surface.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130913442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Jeng, V. Lo, S. Chao, T.-C. Hsiao, Derray Huang
The rare earth-transition metal (RE-TM) alloys are widely accepted as the most suitable material for magneto-optical (MO) recording. The magnetic and optical properties of the recording media, hence the read-write-erase characteristics of the disk, are crucially dependent on the composition of the RE-TM films. Tailoring the composition of the films to meet the requirements in various magneto-optical recording applications is, therefore, important. In-line sputtering is the most common method for RE-TM film coating in disk production process. There are two common methods for fabricating sputter target; one is powder-sintering, the other is melt-casting. The former method yields a target composed of mixtures of pure element phases and certain percentage of intermetallic compound phases, the latter method yields a target composed of 100% intermetallic compound phases. The sputtering of RE-TM target often gives nonuniform composition distribution on the disk based on past experiences. This problem motivated us to study the sputtered atom distribution of the targets which were fabricated by different methods.
{"title":"Compositional uniformity control on deposition of magneto-optical disk","authors":"T. Jeng, V. Lo, S. Chao, T.-C. Hsiao, Derray Huang","doi":"10.1117/12.150663","DOIUrl":"https://doi.org/10.1117/12.150663","url":null,"abstract":"The rare earth-transition metal (RE-TM) alloys are widely accepted as the most suitable material for magneto-optical (MO) recording. The magnetic and optical properties of the recording media, hence the read-write-erase characteristics of the disk, are crucially dependent on the composition of the RE-TM films. Tailoring the composition of the films to meet the requirements in various magneto-optical recording applications is, therefore, important. In-line sputtering is the most common method for RE-TM film coating in disk production process. There are two common methods for fabricating sputter target; one is powder-sintering, the other is melt-casting. The former method yields a target composed of mixtures of pure element phases and certain percentage of intermetallic compound phases, the latter method yields a target composed of 100% intermetallic compound phases. The sputtering of RE-TM target often gives nonuniform composition distribution on the disk based on past experiences. This problem motivated us to study the sputtered atom distribution of the targets which were fabricated by different methods.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117141526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Jiang, Yu Chen, Chuanxing Zhu, M. Jiang, F. Gan
A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.
{"title":"Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering","authors":"F. Jiang, Yu Chen, Chuanxing Zhu, M. Jiang, F. Gan","doi":"10.1117/12.150647","DOIUrl":"https://doi.org/10.1117/12.150647","url":null,"abstract":"A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128034414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely in order to improve the crystallization speed, the data retention time, and the stability of cyclic operation, but its mechanism is not clear. V-VI compounds (GeTe, SnTe) are well known as compounds in which the ferroelectric structural phase transition occurs. The dielectric constant (epsilon) 0 changes largely due to a change in the short-range order of weakly bound nearest neighbors in the crystal to more strongly bound nearest neighbors in the amorphous phase. Therefore, it is necessary to discuss the effect of Sb addition in the stoichiometric GeTe-Sb2Te3 composition upon the dynamic properties of crystallization and the dielectric constant change (Delta) (epsilon) 0 based on the ferroelectric phase transition.
{"title":"Ferroelectric phase transition of Te alloy films and its optical disk properties","authors":"M. Okuda, H. Naito, T. Matsushita","doi":"10.1117/12.150648","DOIUrl":"https://doi.org/10.1117/12.150648","url":null,"abstract":"In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely in order to improve the crystallization speed, the data retention time, and the stability of cyclic operation, but its mechanism is not clear. V-VI compounds (GeTe, SnTe) are well known as compounds in which the ferroelectric structural phase transition occurs. The dielectric constant (epsilon) 0 changes largely due to a change in the short-range order of weakly bound nearest neighbors in the crystal to more strongly bound nearest neighbors in the amorphous phase. Therefore, it is necessary to discuss the effect of Sb addition in the stoichiometric GeTe-Sb2Te3 composition upon the dynamic properties of crystallization and the dielectric constant change (Delta) (epsilon) 0 based on the ferroelectric phase transition.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127045986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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