首页 > 最新文献

Optical Storage and Information Data Storage最新文献

英文 中文
Magneto-optic Kerr effect of domain walls in ferromagnetic double-layered films 铁磁双层薄膜中畴壁的磁光克尔效应
Pub Date : 1993-08-13 DOI: 10.1117/12.150676
P. Zhu, Zhong Xu, Yong Hu, G. Lin, Z. Lee
The influence of domain walls on magneto-optic effect of the double-layered films is investigated. A method to cut the domain walls into a set of parallel thin-limit layers is introduced.Thus, the problems of light reflected by and transmitting through the domain walls are equivalent to those by thin-limit multilayer systems. The equation of Kerr rotation angle induced by domain walls is deduced. It is found that the Kerr rotation angle depends on the thickness of domain walls in the double-layered films.
研究了畴壁对双层膜磁光效应的影响。介绍了一种将畴壁切割成一组平行薄极限层的方法。因此,光被畴壁反射和通过畴壁的问题与薄限制多层系统的问题是等效的。推导了畴壁诱导克尔旋转角的方程。研究发现,克尔旋转角与双层膜的畴壁厚度有关。
{"title":"Magneto-optic Kerr effect of domain walls in ferromagnetic double-layered films","authors":"P. Zhu, Zhong Xu, Yong Hu, G. Lin, Z. Lee","doi":"10.1117/12.150676","DOIUrl":"https://doi.org/10.1117/12.150676","url":null,"abstract":"The influence of domain walls on magneto-optic effect of the double-layered films is investigated. A method to cut the domain walls into a set of parallel thin-limit layers is introduced.Thus, the problems of light reflected by and transmitting through the domain walls are equivalent to those by thin-limit multilayer systems. The equation of Kerr rotation angle induced by domain walls is deduced. It is found that the Kerr rotation angle depends on the thickness of domain walls in the double-layered films.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129088670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Persistent spectral hole-burning study on some organic and inorganic materials 一些有机和无机材料的持续光谱烧孔研究
Pub Date : 1993-08-13 DOI: 10.1117/12.150653
Lingbing Chen, You-yuan Zhao, Jianzhao Li, Fuming Li
Persistent spectral hole burning (PSHB) was performed for several porphyrin molecules imbedded in polymer hosts and rare-earth ion Sm2+ doped in BaFCl0.5Br0.5 matrix. Power saturation and broadening effects for hole depth and width were observed. The dynamical process of hole formation was measured and explanation by population rate equations was given. Quantum efficiency of photochemical hole burning was investigated. For BaFCl0.5Br0.5:Sm2+ the capacity of data storage was estimated according to the result of multiple hole burning.
在BaFCl0.5Br0.5基体中掺杂稀土离子Sm2+,并在聚合物基体中嵌入卟啉分子,进行了持续光谱空穴燃烧(PSHB)。观察到功率饱和效应和孔深、孔宽的展宽效应。测量了井眼形成的动力学过程,并给出了种群率方程的解释。研究了光化学孔燃烧的量子效率。对于BaFCl0.5Br0.5:Sm2+,根据多孔燃烧结果估计数据存储容量。
{"title":"Persistent spectral hole-burning study on some organic and inorganic materials","authors":"Lingbing Chen, You-yuan Zhao, Jianzhao Li, Fuming Li","doi":"10.1117/12.150653","DOIUrl":"https://doi.org/10.1117/12.150653","url":null,"abstract":"Persistent spectral hole burning (PSHB) was performed for several porphyrin molecules imbedded in polymer hosts and rare-earth ion Sm2+ doped in BaFCl0.5Br0.5 matrix. Power saturation and broadening effects for hole depth and width were observed. The dynamical process of hole formation was measured and explanation by population rate equations was given. Quantum efficiency of photochemical hole burning was investigated. For BaFCl0.5Br0.5:Sm2+ the capacity of data storage was estimated according to the result of multiple hole burning.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122463076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study on magnetic and magneto-optical properties of Bi, Al (or Ga)-substituted garnet films for magneto-optical recording 磁光记录用Bi、Al(或Ga)取代石榴石薄膜的磁性和磁光性能研究
Pub Date : 1993-08-13 DOI: 10.1117/12.150642
Yongzong Zhou, D. Shen, F. Gan
Al and Ga-substituted Bi:DyIG films have been prepared on glass substrates by pyrolysis method. The magnetic and magneto-optical properties of Al or Ga-substituted garnet films have been investigated in detail. Al or Ga-substituted Bi:DyIG films have high coercive force and good Faraday hysteresis loops. At the wavelength of 510 nm, the Faraday rotation angle was about 8 degree(s)/micrometers for the optimum Al or Ga content of 1 or 0.7, respectively. For optimum Al and Ga content, the crystallization temperatures were about 700 and 675 degree(s)C, respectively. X-ray diffraction pattern showed that the film was polycrystalline garnet phase without preferred crystal orientation.
采用热解法在玻璃衬底上制备了Al和ga取代Bi:DyIG薄膜。研究了Al或ga取代石榴石薄膜的磁性和磁光性质。Al或ga取代Bi:DyIG薄膜具有较高的矫顽力和良好的法拉第磁滞回。在510 nm波长处,Al和Ga的最佳含量分别为1和0.7时,法拉第旋转角约为8度/微米。Al和Ga含量最佳的结晶温度分别为700℃和675℃左右。x射线衍射图显示该薄膜为多晶石榴石相,无择优取向。
{"title":"Study on magnetic and magneto-optical properties of Bi, Al (or Ga)-substituted garnet films for magneto-optical recording","authors":"Yongzong Zhou, D. Shen, F. Gan","doi":"10.1117/12.150642","DOIUrl":"https://doi.org/10.1117/12.150642","url":null,"abstract":"Al and Ga-substituted Bi:DyIG films have been prepared on glass substrates by pyrolysis method. The magnetic and magneto-optical properties of Al or Ga-substituted garnet films have been investigated in detail. Al or Ga-substituted Bi:DyIG films have high coercive force and good Faraday hysteresis loops. At the wavelength of 510 nm, the Faraday rotation angle was about 8 degree(s)/micrometers for the optimum Al or Ga content of 1 or 0.7, respectively. For optimum Al and Ga content, the crystallization temperatures were about 700 and 675 degree(s)C, respectively. X-ray diffraction pattern showed that the film was polycrystalline garnet phase without preferred crystal orientation.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133109513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Measurement of surface roughness of optical disk substrates by differential polarization interferometry 用微分偏振干涉法测量光盘基底表面粗糙度
Pub Date : 1993-08-13 DOI: 10.1117/12.150655
Wendong Xu, Xishan Li
This paper proposes a new interferometer to measure the roughness of optical disk substrates, which applies the principle of shearing interferometry and uses a Faraday modulator to detect the phase between two polarized beams. The instrument can produce surface probe and other statistical data with a height sensitivity of 2 nm and a lateral resolution of 1.2 micrometers . It has excellent stability even under vibration conditions, and rapid and noncontact measurements can be made without a special reference surface.
本文提出了一种用于测量光盘基片粗糙度的新型干涉仪,该干涉仪应用剪切干涉仪原理,利用法拉第调制器检测两束偏振光之间的相位。该仪器可产生高度灵敏度为2 nm、横向分辨率为1.2微米的表面探针等统计数据。即使在振动条件下,它也具有优异的稳定性,并且无需特殊参考面即可进行快速非接触式测量。
{"title":"Measurement of surface roughness of optical disk substrates by differential polarization interferometry","authors":"Wendong Xu, Xishan Li","doi":"10.1117/12.150655","DOIUrl":"https://doi.org/10.1117/12.150655","url":null,"abstract":"This paper proposes a new interferometer to measure the roughness of optical disk substrates, which applies the principle of shearing interferometry and uses a Faraday modulator to detect the phase between two polarized beams. The instrument can produce surface probe and other statistical data with a height sensitivity of 2 nm and a lateral resolution of 1.2 micrometers . It has excellent stability even under vibration conditions, and rapid and noncontact measurements can be made without a special reference surface.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130913442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compositional uniformity control on deposition of magneto-optical disk 磁光盘沉积的成分均匀性控制
Pub Date : 1993-08-13 DOI: 10.1117/12.150663
T. Jeng, V. Lo, S. Chao, T.-C. Hsiao, Derray Huang
The rare earth-transition metal (RE-TM) alloys are widely accepted as the most suitable material for magneto-optical (MO) recording. The magnetic and optical properties of the recording media, hence the read-write-erase characteristics of the disk, are crucially dependent on the composition of the RE-TM films. Tailoring the composition of the films to meet the requirements in various magneto-optical recording applications is, therefore, important. In-line sputtering is the most common method for RE-TM film coating in disk production process. There are two common methods for fabricating sputter target; one is powder-sintering, the other is melt-casting. The former method yields a target composed of mixtures of pure element phases and certain percentage of intermetallic compound phases, the latter method yields a target composed of 100% intermetallic compound phases. The sputtering of RE-TM target often gives nonuniform composition distribution on the disk based on past experiences. This problem motivated us to study the sputtered atom distribution of the targets which were fabricated by different methods.
稀土过渡金属(RE-TM)合金被广泛认为是最适合磁光记录的材料。记录介质的磁性和光学特性,即磁盘的读-写-擦特性,在很大程度上取决于RE-TM薄膜的组成。因此,调整薄膜的组成以满足各种磁光记录应用的要求是很重要的。在线溅射是光盘生产过程中最常用的RE-TM薄膜镀膜方法。制备溅射靶材有两种常用方法;一种是粉末烧结,另一种是熔融铸造。前一种方法得到由纯元素相和一定比例的金属间化合物相混合组成的靶,后一种方法得到由100%的金属间化合物相组成的靶。根据以往的经验,RE-TM靶材溅射过程中,其成分分布往往不均匀。这一问题促使我们对不同方法制备的靶材的溅射原子分布进行研究。
{"title":"Compositional uniformity control on deposition of magneto-optical disk","authors":"T. Jeng, V. Lo, S. Chao, T.-C. Hsiao, Derray Huang","doi":"10.1117/12.150663","DOIUrl":"https://doi.org/10.1117/12.150663","url":null,"abstract":"The rare earth-transition metal (RE-TM) alloys are widely accepted as the most suitable material for magneto-optical (MO) recording. The magnetic and optical properties of the recording media, hence the read-write-erase characteristics of the disk, are crucially dependent on the composition of the RE-TM films. Tailoring the composition of the films to meet the requirements in various magneto-optical recording applications is, therefore, important. In-line sputtering is the most common method for RE-TM film coating in disk production process. There are two common methods for fabricating sputter target; one is powder-sintering, the other is melt-casting. The former method yields a target composed of mixtures of pure element phases and certain percentage of intermetallic compound phases, the latter method yields a target composed of 100% intermetallic compound phases. The sputtering of RE-TM target often gives nonuniform composition distribution on the disk based on past experiences. This problem motivated us to study the sputtered atom distribution of the targets which were fabricated by different methods.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117141526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering 溅射制备GeTe-Sb2Te3体系薄膜的静态和光学性能
Pub Date : 1993-08-13 DOI: 10.1117/12.150647
F. Jiang, Yu Chen, Chuanxing Zhu, M. Jiang, F. Gan
A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.
采用共溅射法制备了一系列具有良好写/擦除性能的Ge-Sb-Te体系薄膜。在75至约200ns脉冲宽度范围内,写入和擦除功率分别为15至约22mw和6至约10mw。在这些条件下,在上述系统中的一些薄膜样品中获得了高达105的高写/擦除周期。根据红外光谱和薄膜厚度计算了折射率。利用具有合适折射率和膜厚的可擦除相变材料,可以设计出具有最佳记录性能的多层薄膜。
{"title":"Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering","authors":"F. Jiang, Yu Chen, Chuanxing Zhu, M. Jiang, F. Gan","doi":"10.1117/12.150647","DOIUrl":"https://doi.org/10.1117/12.150647","url":null,"abstract":"A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128034414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ferroelectric phase transition of Te alloy films and its optical disk properties Te合金薄膜的铁电相变及其光盘性能
Pub Date : 1993-08-13 DOI: 10.1117/12.150648
M. Okuda, H. Naito, T. Matsushita
In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely in order to improve the crystallization speed, the data retention time, and the stability of cyclic operation, but its mechanism is not clear. V-VI compounds (GeTe, SnTe) are well known as compounds in which the ferroelectric structural phase transition occurs. The dielectric constant (epsilon) 0 changes largely due to a change in the short-range order of weakly bound nearest neighbors in the crystal to more strongly bound nearest neighbors in the amorphous phase. Therefore, it is necessary to discuss the effect of Sb addition in the stoichiometric GeTe-Sb2Te3 composition upon the dynamic properties of crystallization and the dielectric constant change (Delta) (epsilon) 0 based on the ferroelectric phase transition.
在可逆相变光学记录材料GeTe-Sb2Te3化学计量膜中,Sb的加入被广泛应用于提高结晶速度、数据保留时间和循环运行的稳定性,但其作用机理尚不清楚。V-VI化合物(GeTe, SnTe)是众所周知的发生铁电结构相变的化合物。介电常数(epsilon) 0的变化很大程度上是由于晶体中弱束缚近邻到非晶相中强束缚近邻的短程顺序的变化。因此,有必要讨论在化学计量的GeTe-Sb2Te3组成中加入Sb对结晶动力学性质和基于铁电相变的介电常数变化(Delta) (epsilon) 0的影响。
{"title":"Ferroelectric phase transition of Te alloy films and its optical disk properties","authors":"M. Okuda, H. Naito, T. Matsushita","doi":"10.1117/12.150648","DOIUrl":"https://doi.org/10.1117/12.150648","url":null,"abstract":"In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely in order to improve the crystallization speed, the data retention time, and the stability of cyclic operation, but its mechanism is not clear. V-VI compounds (GeTe, SnTe) are well known as compounds in which the ferroelectric structural phase transition occurs. The dielectric constant (epsilon) 0 changes largely due to a change in the short-range order of weakly bound nearest neighbors in the crystal to more strongly bound nearest neighbors in the amorphous phase. Therefore, it is necessary to discuss the effect of Sb addition in the stoichiometric GeTe-Sb2Te3 composition upon the dynamic properties of crystallization and the dielectric constant change (Delta) (epsilon) 0 based on the ferroelectric phase transition.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"17 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127045986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Optical Storage and Information Data Storage
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1