A window based graphics interface for phase shifting in a moiré interferometry system is introduced in this paper. VISUAL C++ is used in the software programming. The phase shifting is accomplished by driving the reference grating in the moiré interfermetry system with a low voltage piezo stack. Four images from three shifts and one original image are used to derive the phase diagram, which is used for displacement and strain calculations. Automatic fringe numbering is achieved by the phase shifting, which significantly simplifies the traditional fringe-counting process. The strain calculation is also automatic by space derivative of displacement. The displacement distribution is obtained by unwrapping the phase diagram. Various help menu functions are provided, facilitating the ease use of the software. A 3-point bending beam is used for the demonstration. The technique is also applied to the analysis of thermal deformations in a flip-chip electronic package.
{"title":"A Window Based Graphics Interface for Phase Shifting Analysis in Moire Interferometry","authors":"Xiaoyuan He, D. Zou, Sheng Liu, Yifan Guo","doi":"10.1115/imece1997-1233","DOIUrl":"https://doi.org/10.1115/imece1997-1233","url":null,"abstract":"\u0000 A window based graphics interface for phase shifting in a moiré interferometry system is introduced in this paper. VISUAL C++ is used in the software programming. The phase shifting is accomplished by driving the reference grating in the moiré interfermetry system with a low voltage piezo stack. Four images from three shifts and one original image are used to derive the phase diagram, which is used for displacement and strain calculations. Automatic fringe numbering is achieved by the phase shifting, which significantly simplifies the traditional fringe-counting process. The strain calculation is also automatic by space derivative of displacement. The displacement distribution is obtained by unwrapping the phase diagram. Various help menu functions are provided, facilitating the ease use of the software. A 3-point bending beam is used for the demonstration. The technique is also applied to the analysis of thermal deformations in a flip-chip electronic package.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"266 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123290972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Moiré interferometry is used for mapping elasto-plastic deformations in 63/37 solder-copper bimaterials subjected to predominantly tensile loading. A method for quantifying the fracture parameter — the J-integral — using full-field measurement of u2-displacements has been developed. A linear relationship between crack tip opening displacements (CTOD) and the J-integral is demonstrated. The crack growth resistance curve and hence crack initiation toughness JC for the bimaterial is obtained. Full-field optical information has also suggested the possibility of using a simpler method for the J-integral estimation using a single strain gage.
{"title":"Measurement of Solder-Copper Interfacial Fracture Parameters Using u2-Displacement Fields","authors":"H. Tippur, H. Krishnamoorthy","doi":"10.1115/imece1997-1230","DOIUrl":"https://doi.org/10.1115/imece1997-1230","url":null,"abstract":"\u0000 Moiré interferometry is used for mapping elasto-plastic deformations in 63/37 solder-copper bimaterials subjected to predominantly tensile loading. A method for quantifying the fracture parameter — the J-integral — using full-field measurement of u2-displacements has been developed. A linear relationship between crack tip opening displacements (CTOD) and the J-integral is demonstrated. The crack growth resistance curve and hence crack initiation toughness JC for the bimaterial is obtained. Full-field optical information has also suggested the possibility of using a simpler method for the J-integral estimation using a single strain gage.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"318 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122537026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electronic packages are complicated material systems operating under thermal and mechanical loading conditions. The package design and reliability analysis requires knowledge in many technical disciplines and specialized experimental methods and tools. Recently, many advanced techniques are adopted from other technical areas to be applied to the packaging applications and many experimental tools are developed correspondingly. In this paper advanced experimental techniques in electronic packaging are reviewed. The techniques and methods for mechanical analysis are emphasized as well as the new development in equipment and tools. The applications of these techniques are introduced by numerous reference publications. Most of the applications are directly related to new product development and have made significant impact in the electronics industries by assisting product designs, qualifications, reliability predictions and cycle time reductions.
{"title":"Testing and Measurement Techniques Applied to Electronic Packaging Development","authors":"Yifan Guo, V. Sarihan","doi":"10.1115/imece1997-1231","DOIUrl":"https://doi.org/10.1115/imece1997-1231","url":null,"abstract":"\u0000 Electronic packages are complicated material systems operating under thermal and mechanical loading conditions. The package design and reliability analysis requires knowledge in many technical disciplines and specialized experimental methods and tools. Recently, many advanced techniques are adopted from other technical areas to be applied to the packaging applications and many experimental tools are developed correspondingly. In this paper advanced experimental techniques in electronic packaging are reviewed. The techniques and methods for mechanical analysis are emphasized as well as the new development in equipment and tools. The applications of these techniques are introduced by numerous reference publications. Most of the applications are directly related to new product development and have made significant impact in the electronics industries by assisting product designs, qualifications, reliability predictions and cycle time reductions.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127162561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Polysilicon is the most widely used material in current commercial MEMS products, yet its mechanical properties are not fully determined. Vapor deposited polysilicon is thin — on the order of a few microns — which makes handling and testing difficult. It is desirable to use mechanical tests similar to those standardized by ASTM, but this requires special techniques and procedures. Tensile tests of 3.5 micron thick polysilicon film have been conducted and these are briefly described. Two advances in mechanical property testing are then presented. A preliminary investigation of the effect of hydrofluoric acid on the tensile properties of polysilicon shows no deleterious effect of this acid which is commonly used as a release agent. Fracture toughness testing of polysilicon, in which crack opening displacement is measured (an approach similar to that specified by ASTM), yields a preliminary value of 1.6 MPa-m1/2.
{"title":"Advances in Tensile Testing of Polysilicon Thin Films","authors":"W. Sharpe, Bin Yuan, R. L. Edwards","doi":"10.1115/imece1997-1235","DOIUrl":"https://doi.org/10.1115/imece1997-1235","url":null,"abstract":"\u0000 Polysilicon is the most widely used material in current commercial MEMS products, yet its mechanical properties are not fully determined. Vapor deposited polysilicon is thin — on the order of a few microns — which makes handling and testing difficult. It is desirable to use mechanical tests similar to those standardized by ASTM, but this requires special techniques and procedures.\u0000 Tensile tests of 3.5 micron thick polysilicon film have been conducted and these are briefly described. Two advances in mechanical property testing are then presented. A preliminary investigation of the effect of hydrofluoric acid on the tensile properties of polysilicon shows no deleterious effect of this acid which is commonly used as a release agent. Fracture toughness testing of polysilicon, in which crack opening displacement is measured (an approach similar to that specified by ASTM), yields a preliminary value of 1.6 MPa-m1/2.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129576699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Piezoresistive sensors fabricated on (100) and (111) silicon surfaces are capable of measuring from four to all six stress components on the surface of a die. Such resistor based sensors have been successfully designed and fabricated on these wafer planes, and are being used for measurement of die stresses in electronic packaging. However, the use of resistor sensors has several drawbacks including their large size, low sensitivity, and limited functional temperature range. Van der Pauw (VDP) structures have been identified as one potential sensor candidate for overcoming the limitations of large resistor sensors. In this paper, the feasibility of using van der Pauw structures as stress sensors has been demonstrated. The sensitivity of VDP structures fabricated on both (100) and (111) silicon surfaces to uniaxial stress has been measured using four-point-bending tests, and typical results are presented. The observed VDP stress sensitivities are much higher than those of their analogous resistor sensor counterparts. Preliminary finite difference based anisotropic conduction simulation results are in general agreement with the observed measurements.
在(100)和(111)硅表面上制造的压阻式传感器能够测量模具表面上的四个到所有六个应力分量。这种基于电阻的传感器已经成功地设计和制造在这些晶圆平面上，并被用于测量电子封装中的模具应力。然而，使用电阻传感器有几个缺点，包括它们的尺寸大，灵敏度低，和有限的功能温度范围。Van der Pauw (VDP)结构被认为是克服大电阻传感器局限性的一种潜在的传感器候选者。本文论证了利用范德堡结构作为应力传感器的可行性。用四点弯曲试验测量了在(100)和(111)硅表面制备的VDP结构对单轴应力的敏感性，并给出了典型的结果。观测到的VDP应力灵敏度远高于同类电阻传感器。初步的基于有限差分的各向异性传导模拟结果与实测结果基本一致。
{"title":"Evaluation of Die Stress Using van der Pauw Sensors","authors":"A. Mian, J. Suhling, R. Jaeger, B. Wilamowski","doi":"10.1115/imece1997-1228","DOIUrl":"https://doi.org/10.1115/imece1997-1228","url":null,"abstract":"\u0000 Piezoresistive sensors fabricated on (100) and (111) silicon surfaces are capable of measuring from four to all six stress components on the surface of a die. Such resistor based sensors have been successfully designed and fabricated on these wafer planes, and are being used for measurement of die stresses in electronic packaging. However, the use of resistor sensors has several drawbacks including their large size, low sensitivity, and limited functional temperature range. Van der Pauw (VDP) structures have been identified as one potential sensor candidate for overcoming the limitations of large resistor sensors. In this paper, the feasibility of using van der Pauw structures as stress sensors has been demonstrated. The sensitivity of VDP structures fabricated on both (100) and (111) silicon surfaces to uniaxial stress has been measured using four-point-bending tests, and typical results are presented. The observed VDP stress sensitivities are much higher than those of their analogous resistor sensor counterparts. Preliminary finite difference based anisotropic conduction simulation results are in general agreement with the observed measurements.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"23 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126811042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Although it is challenging to resolve deformation fields near corners or interfaces for layered structures, it is essential for a measurement technique to deal with of stress/strain concentrations, strain gradients, failure initiation and growth, local microstructure evolutions, etc. In this study, an innovative phase shifting technique is proposed, coupled with an image processing software, to investigate several interesting problems in electronic packaging. A power plastic IC package and a flip-chip package are selected to demonstrate the powerfulness of the system. A nanoscale deformation field is obtained for both the corner area and the underfilled containing flip-chip solder balls.
{"title":"Resolving Deformation Field Near Corners and Interfaces by Phase Shifting Moiré Interferometry","authors":"D. Zou, Xiaoyuan He, Sheng Liu, Yifan Guo, F. Dai","doi":"10.1115/imece1997-1229","DOIUrl":"https://doi.org/10.1115/imece1997-1229","url":null,"abstract":"\u0000 Although it is challenging to resolve deformation fields near corners or interfaces for layered structures, it is essential for a measurement technique to deal with of stress/strain concentrations, strain gradients, failure initiation and growth, local microstructure evolutions, etc. In this study, an innovative phase shifting technique is proposed, coupled with an image processing software, to investigate several interesting problems in electronic packaging. A power plastic IC package and a flip-chip package are selected to demonstrate the powerfulness of the system. A nanoscale deformation field is obtained for both the corner area and the underfilled containing flip-chip solder balls.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131039337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The objective of this work was to determine the adhesive fracture energies associated with various interfaces that were produced by different methods of applying polyimide to an aluminum substrate. Due to the relatively small thicknesses of the polyimide films, blister tests were considered most appropriate. Nonetheless, a considerable amount of global yielding was anticipated (Shirani and Liechti, 1994), even for peninsula blisters. In order to make sure that extracted adhesive fracture values were not masked by global yielding effects, a fracture process zone modeling approach (Needleman, 1990 and Tvergaard and Hutchinson, 1993) was taken.
这项工作的目的是确定与不同方法将聚酰亚胺应用于铝基板产生的各种界面相关的粘接断裂能。由于聚酰亚胺薄膜的厚度相对较小，泡罩试验被认为是最合适的。尽管如此，预计全球产量相当大(Shirani和Liechti, 1994年)，甚至对于半岛水泡也是如此。为了确保提取的粘接断裂值不被全局屈服效应所掩盖，采用了断裂过程区建模方法(Needleman, 1990和Tvergaard and Hutchinson, 1993)。
{"title":"Calibrated Fracture Process Zone Models for Polyimide/Metal Blisters","authors":"A. Shirani, K. Liechti, F. J. Boerio","doi":"10.1115/imece1997-1238","DOIUrl":"https://doi.org/10.1115/imece1997-1238","url":null,"abstract":"\u0000 The objective of this work was to determine the adhesive fracture energies associated with various interfaces that were produced by different methods of applying polyimide to an aluminum substrate. Due to the relatively small thicknesses of the polyimide films, blister tests were considered most appropriate. Nonetheless, a considerable amount of global yielding was anticipated (Shirani and Liechti, 1994), even for peninsula blisters. In order to make sure that extracted adhesive fracture values were not masked by global yielding effects, a fracture process zone modeling approach (Needleman, 1990 and Tvergaard and Hutchinson, 1993) was taken.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133121825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bimaterial corners arise in many modem structural components from structural adhesively bonded joints to line structures in microelectronics devices. The elasticity problem has been extensively analyzed (Williams, 1952, Bogy, 1971, Hein and Erdogan, 1971) and it has been shown that singularities in stress can arise, depending on the properties of the materials and the corner geometry. These singularities (or eigenvalues) may be complex in nature and a number of them may co-exist for a particular configuration. Various schemes have been developed for extracting the stress intensity factors (or eigenvectors) associated with each singular term (Stem et al, 1976, Carpenter and Byers, 1987).
{"title":"Moiré Interferometric Analysis of Crack Nucleation From Bimaterial Corners","authors":"I. Mohammed, K. Liechti","doi":"10.1115/imece1997-1232","DOIUrl":"https://doi.org/10.1115/imece1997-1232","url":null,"abstract":"\u0000 Bimaterial corners arise in many modem structural components from structural adhesively bonded joints to line structures in microelectronics devices. The elasticity problem has been extensively analyzed (Williams, 1952, Bogy, 1971, Hein and Erdogan, 1971) and it has been shown that singularities in stress can arise, depending on the properties of the materials and the corner geometry. These singularities (or eigenvalues) may be complex in nature and a number of them may co-exist for a particular configuration. Various schemes have been developed for extracting the stress intensity factors (or eigenvectors) associated with each singular term (Stem et al, 1976, Carpenter and Byers, 1987).","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114531357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A methodology to characterize and quantify the thermo-mechanical properties of silicon wafers is presented. The method applies broadband Thermo-Acousto-Photonic (TAP) NDE techniques to both generate and detect analyzing guided Lamb waves in wafer structures. Optically induced, dispersive acoustic waves carry important information pertaining to the variation of mechanical properties due to temperature changes. To quantify the variation as functions of temperature, a spline-wavelet based fast integral wavelet transform is employed to identify the temporal progression of the multi-modal structure of dispersive waveguide modes. These results are then used to extract group velocities of particular frequency components of interest. Examples are given to demonstrate the effectiveness of the method on experimental data acquired using the Fiber Tip Interferometer (FTI) system developed at Texas A&M University.
{"title":"Ultrasonic Time-Frequency Characterization of Silicon Wafers at Elevated Temperatures","authors":"C. Suh, G. A. Rabroker, C. P. Burger, R. Chona","doi":"10.1115/imece1997-1225","DOIUrl":"https://doi.org/10.1115/imece1997-1225","url":null,"abstract":"\u0000 A methodology to characterize and quantify the thermo-mechanical properties of silicon wafers is presented. The method applies broadband Thermo-Acousto-Photonic (TAP) NDE techniques to both generate and detect analyzing guided Lamb waves in wafer structures. Optically induced, dispersive acoustic waves carry important information pertaining to the variation of mechanical properties due to temperature changes. To quantify the variation as functions of temperature, a spline-wavelet based fast integral wavelet transform is employed to identify the temporal progression of the multi-modal structure of dispersive waveguide modes. These results are then used to extract group velocities of particular frequency components of interest. Examples are given to demonstrate the effectiveness of the method on experimental data acquired using the Fiber Tip Interferometer (FTI) system developed at Texas A&M University.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124466245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, the creep behavior of the plastic power package at high temperature 155 °C was studied by real time moiré interferometry and FEM modeling. 1200 l/mm grating was replicated onto the cross-section of the specimen at room temperature. The specimen was held at 155°C (around the Tg of the epoxy molding compound) in the vacuum chamber for about 13 hours. The thermal deformation and creep of the specimen was recorded and measured in situ by moiré interferometry. The experimental results show that creep deformation occurs in the epoxy molding compound. The non-linear viscoelastic constitutive model was used for FEM simulation. The simulation results were compared with the experimental results and they were matched quite well on the global deformation of the specimen. The calculation results also show that, accompanied with the global creep deformation in molding compound epoxy, local stress concentration decreased significantly.
{"title":"Creep Behavior Study of Plastic Power Package by Real Time Moiré Interferometry and FEM Modeling","authors":"D. Zou, Jianjun Wang, Minfu Lu, Sheng Liu","doi":"10.1115/imece1997-1227","DOIUrl":"https://doi.org/10.1115/imece1997-1227","url":null,"abstract":"\u0000 In this paper, the creep behavior of the plastic power package at high temperature 155 °C was studied by real time moiré interferometry and FEM modeling. 1200 l/mm grating was replicated onto the cross-section of the specimen at room temperature. The specimen was held at 155°C (around the Tg of the epoxy molding compound) in the vacuum chamber for about 13 hours. The thermal deformation and creep of the specimen was recorded and measured in situ by moiré interferometry. The experimental results show that creep deformation occurs in the epoxy molding compound. The non-linear viscoelastic constitutive model was used for FEM simulation. The simulation results were compared with the experimental results and they were matched quite well on the global deformation of the specimen. The calculation results also show that, accompanied with the global creep deformation in molding compound epoxy, local stress concentration decreased significantly.","PeriodicalId":230568,"journal":{"name":"Applications of Experimental Mechanics to Electronic Packaging","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122567755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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