Pub Date : 2026-03-05DOI: 10.1021/acsphotonics.5c02780
Kang Wang, Hui Liu, Jinzhan Zhong, Yanke Li, Bingyan Wei, Xuetao Gan, Jianlin Zhao, Peng Li, Sheng Liu
Three-dimensional topologies of knots have played fundamental roles across multiple physics disciplines. In structured light, the stable knotted wave occurs in the form of knotted vortex loops. Although static laboratory generation of these structures has been achieved by various optical devices, the continuous and dynamically tunable modulation remains largely unexplored. Here, we present experimental demonstrations of the continuous deformation of optical vortex knots and links by developing an optical system incorporating a Pancharatnam–Berry phase element (PBPE). The generated optical vortex knots can be spatially stretched, compressed, and rotated via a single liquid crystal PBPE and conventional optical wave plates. Our method offers general approaches for the topological evolution and control of optical knots and potential applications to other physical fields.
{"title":"Tunable Optical Vortex Knots Governed by a Quasi-Spin-Decoupled Liquid Crystal Pancharatnam–Berry Phase Element","authors":"Kang Wang, Hui Liu, Jinzhan Zhong, Yanke Li, Bingyan Wei, Xuetao Gan, Jianlin Zhao, Peng Li, Sheng Liu","doi":"10.1021/acsphotonics.5c02780","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02780","url":null,"abstract":"Three-dimensional topologies of knots have played fundamental roles across multiple physics disciplines. In structured light, the stable knotted wave occurs in the form of knotted vortex loops. Although static laboratory generation of these structures has been achieved by various optical devices, the continuous and dynamically tunable modulation remains largely unexplored. Here, we present experimental demonstrations of the continuous deformation of optical vortex knots and links by developing an optical system incorporating a Pancharatnam–Berry phase element (PBPE). The generated optical vortex knots can be spatially stretched, compressed, and rotated via a single liquid crystal PBPE and conventional optical wave plates. Our method offers general approaches for the topological evolution and control of optical knots and potential applications to other physical fields.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"19 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-05DOI: 10.1021/acsphotonics.5c02539
Yan Chen, Mingming Hou, Linhan Li, Yang He, Sitan Liu, Shiliang Pu, Fei Yi
Conventional infrared objectives typically rely on multiple refractive elements; however, their size, mass, and assembly complexity limit compact, cost constrained LWIR applications. Here we report a high-transmittance monolithic hybrid metalens singlet for broadband LWIR (8–12 μm) imaging, in which a plano-convex refractive surface and a dispersion-engineered metalens are integrated on opposing optical surfaces. Using subwavelength meta-units selected by an RMS phase criterion evaluated at multiple wavelengths, the singlet simultaneously corrects chromatic and spherical aberrations, achieves near diffraction-limited focusing, maintains back focal length variation within ±40 μm across 8–12 μm, and delivers a broadband MTF close to the diffraction limit. FTIR and system tests show in-band average transmittance of 83.2% (metalens) and 74.8% (complete singlet). The device enables clear thermal imaging of real scenes from 0.8 to 50 m. Owing to its compact form factor and scalable fabrication potential, the monolithic singlet provides a cost-effective building block for lightweight LWIR modules and can be further combined with simple refractive correctors to realize systems with a wider field of view.
{"title":"Monolithic Hybrid Metalens Singlet for Broadband Aberration-Corrected LWIR Imaging","authors":"Yan Chen, Mingming Hou, Linhan Li, Yang He, Sitan Liu, Shiliang Pu, Fei Yi","doi":"10.1021/acsphotonics.5c02539","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02539","url":null,"abstract":"Conventional infrared objectives typically rely on multiple refractive elements; however, their size, mass, and assembly complexity limit compact, cost constrained LWIR applications. Here we report a high-transmittance monolithic hybrid metalens singlet for broadband LWIR (8–12 μm) imaging, in which a plano-convex refractive surface and a dispersion-engineered metalens are integrated on opposing optical surfaces. Using subwavelength meta-units selected by an RMS phase criterion evaluated at multiple wavelengths, the singlet simultaneously corrects chromatic and spherical aberrations, achieves near diffraction-limited focusing, maintains back focal length variation within ±40 μm across 8–12 μm, and delivers a broadband MTF close to the diffraction limit. FTIR and system tests show in-band average transmittance of 83.2% (metalens) and 74.8% (complete singlet). The device enables clear thermal imaging of real scenes from 0.8 to 50 m. Owing to its compact form factor and scalable fabrication potential, the monolithic singlet provides a cost-effective building block for lightweight LWIR modules and can be further combined with simple refractive correctors to realize systems with a wider field of view.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"32 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Recent advances in integrated optical gyroscopes focus on the development of on-chip waveguide devices and noise suppression─both critical for higher integration density and measurement accuracy. In this work, we demonstrate a novel, to our knowledge, integrated fiber optic gyroscope (FOG) based on a dual-polarization (DP) scheme incorporating a z-propagating thin-film lithium niobate (TFLN) modulator chip. This chip enables consistent transmission efficiency across all polarization states through an expanded SiON butt-coupling interface and a bilayer inverse taper. By leveraging the complementarity between orthogonal polarized lights, the DP scheme effectively suppresses polarization nonreciprocity and backscattering noise, particularly that arising from chip mode hybridization and sidewall scattering. The integrated DP-FOG achieves a breakthrough bias instability of 0.018 deg/h for a TFLN-based gyroscope, using a polarization-maintaining fiber coil as short as 300 m, with clear detection of the Earth’s rotation. This noise compensation mechanism promises to find significant applications in future monolithic FOGs.
{"title":"Enhancing Stability of an Integrated Fiber Optic Gyroscope Employing a Dual-Polarization Thin Film Lithium Niobate Modulator Chip","authors":"Weibin Feng, Xiaoya Fan, Yulin Wang, Tianxiao Zhang, Haosong Yang, Yuefeng Qi","doi":"10.1021/acsphotonics.5c02620","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02620","url":null,"abstract":"Recent advances in integrated optical gyroscopes focus on the development of on-chip waveguide devices and noise suppression─both critical for higher integration density and measurement accuracy. In this work, we demonstrate a novel, to our knowledge, integrated fiber optic gyroscope (FOG) based on a dual-polarization (DP) scheme incorporating a z-propagating thin-film lithium niobate (TFLN) modulator chip. This chip enables consistent transmission efficiency across all polarization states through an expanded SiON butt-coupling interface and a bilayer inverse taper. By leveraging the complementarity between orthogonal polarized lights, the DP scheme effectively suppresses polarization nonreciprocity and backscattering noise, particularly that arising from chip mode hybridization and sidewall scattering. The integrated DP-FOG achieves a breakthrough bias instability of 0.018 deg/h for a TFLN-based gyroscope, using a polarization-maintaining fiber coil as short as 300 m, with clear detection of the Earth’s rotation. This noise compensation mechanism promises to find significant applications in future monolithic FOGs.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"32 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-05DOI: 10.1021/acsphotonics.5c02298
Ettore Coccato, Jesus Cañas, Davide Farina, Alexis Palais, David Cooper, Nevine Rochat, Eva Monroy
Ultraviolet light sources are essential for disinfection, water purification and biomedical applications, where compact, efficient, mercury-free emitters are needed. We report on the growth and optical characterization of ultrathin AlGaN/AlN multiple quantum wells (MQWs), synthesized by plasma-assisted molecular-beam epitaxy, with thicknesses down to a single atomic layer (monolayer, ML). By tuning the well thickness and composition, the emission wavelength can be shifted from ∼370 nm (8 ML) to 235 nm (1 ML), with the internal quantum efficiency (IQE) increasing drastically for thinner wells. IQE values exceeding 50% are obtained at 235 nm for 1-ML-thick quantum wells, enabled by a sharp enhancement in in-plane carrier confinement. Polarization-resolved measurements reveal that transverse-electric (TE) emission dominates down to ∼260 nm, with a gradual transition to transverse-magnetic (TM) polarization at shorter wavelengths. A comparative analysis with Stranski–Krastanov quantum dots and nanowires shows that ultrathin MQWs provide the most promising performance for emission below 240 nm. These results open perspectives for the implementation of such nanostructures in high-efficiency solid-state and electron-beam-pumped light sources.
{"title":"Monolayer-Scale AlGaN/AlN Multiple Quantum Wells as Active Media for Efficient Cathodoluminescent UVC Emitters","authors":"Ettore Coccato, Jesus Cañas, Davide Farina, Alexis Palais, David Cooper, Nevine Rochat, Eva Monroy","doi":"10.1021/acsphotonics.5c02298","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02298","url":null,"abstract":"Ultraviolet light sources are essential for disinfection, water purification and biomedical applications, where compact, efficient, mercury-free emitters are needed. We report on the growth and optical characterization of ultrathin AlGaN/AlN multiple quantum wells (MQWs), synthesized by plasma-assisted molecular-beam epitaxy, with thicknesses down to a single atomic layer (monolayer, ML). By tuning the well thickness and composition, the emission wavelength can be shifted from ∼370 nm (8 ML) to 235 nm (1 ML), with the internal quantum efficiency (IQE) increasing drastically for thinner wells. IQE values exceeding 50% are obtained at 235 nm for 1-ML-thick quantum wells, enabled by a sharp enhancement in in-plane carrier confinement. Polarization-resolved measurements reveal that transverse-electric (TE) emission dominates down to ∼260 nm, with a gradual transition to transverse-magnetic (TM) polarization at shorter wavelengths. A comparative analysis with Stranski–Krastanov quantum dots and nanowires shows that ultrathin MQWs provide the most promising performance for emission below 240 nm. These results open perspectives for the implementation of such nanostructures in high-efficiency solid-state and electron-beam-pumped light sources.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"46 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the rapid progress of integrated photonics, miniaturized vortex lasers are crucial for chip-scale communication and computing. Bound states in the continuum with topological protection provide a promising route to realize microscale vortex lasers. Although the evolution of topological singularities in momentum space under reduced structural symmetry has been explored, systematic experimental investigations on defect-induced symmetry breaking within the unit cell and its impact on the performance of vortex lasers have yet to be conducted. Here, we propose a C2-symmetric photonic crystal vortex microlaser in the telecom C-band based on bound states in the continuum and investigate how symmetry-breaking defects affect vortex emission in C4v structures. Embedding two rectangular defects inside a circular hole of a square unit cell breaks the C4 symmetry, resulting in a cavity that emits vortex beams with reduced symmetry in the spatial intensity distribution. The proposed microlaser enables stable single-mode vortex emission at room temperature, with an experimentally measured quality factor of approximately 10500. This work reveals a new possibility of controlling vortex beam profiles through defect introduction, providing a practical route for advancing on-chip vortex lasers with customized beams.
{"title":"C2-Symmetric Photonic Crystal Vortex Microlaser Operating in the C-Band Based on Bound States in the Continuum","authors":"Bowen Han,Feng Tian,Wendi Huang,Shengqun Guo,Yilan Wang,Taojie Zhou","doi":"10.1021/acsphotonics.5c02618","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02618","url":null,"abstract":"With the rapid progress of integrated photonics, miniaturized vortex lasers are crucial for chip-scale communication and computing. Bound states in the continuum with topological protection provide a promising route to realize microscale vortex lasers. Although the evolution of topological singularities in momentum space under reduced structural symmetry has been explored, systematic experimental investigations on defect-induced symmetry breaking within the unit cell and its impact on the performance of vortex lasers have yet to be conducted. Here, we propose a C2-symmetric photonic crystal vortex microlaser in the telecom C-band based on bound states in the continuum and investigate how symmetry-breaking defects affect vortex emission in C4v structures. Embedding two rectangular defects inside a circular hole of a square unit cell breaks the C4 symmetry, resulting in a cavity that emits vortex beams with reduced symmetry in the spatial intensity distribution. The proposed microlaser enables stable single-mode vortex emission at room temperature, with an experimentally measured quality factor of approximately 10500. This work reveals a new possibility of controlling vortex beam profiles through defect introduction, providing a practical route for advancing on-chip vortex lasers with customized beams.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"10 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147346651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Laser filaments─plasma channels formed by femtosecond laser ionization in air─have emerged as a prominent source of broadband terahertz (THz) radiation and a versatile platform for free-space THz wave manipulation. However, the underlying near-field interactions, particularly the potential excitation of surface waves at THz frequencies, have remained largely unexplored due to the extreme intensity of the filament, which preclude the use of conventional near-field probes. Here, by combining in situ modulation of the filament using a movable ceramic plate and far-field THz time-domain detection, we achieve theoretical and experimental accesses to near-field THz phenomena, namely, the generation of THz surface plasmon waves (SPW) at the plasma frequency within the filament region. Our findings not only deepen the fundamental understanding of THz creation and confinement along the laser-induced plasma filament, but also establish the filament as a free-space, solid-substrate-free platform for THz SPW studies, with potential of advanced THz wave guiding and signal processing applications benefiting from the SPW nature.
{"title":"Laser Plasma Filament-Bounded Terahertz Surface Waves","authors":"Jiayu Zhao,Linlin Yuan,Jiajun Yang,Yu Xie,Yan Peng,Yiming Zhu","doi":"10.1021/acsphotonics.5c03014","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c03014","url":null,"abstract":"Laser filaments─plasma channels formed by femtosecond laser ionization in air─have emerged as a prominent source of broadband terahertz (THz) radiation and a versatile platform for free-space THz wave manipulation. However, the underlying near-field interactions, particularly the potential excitation of surface waves at THz frequencies, have remained largely unexplored due to the extreme intensity of the filament, which preclude the use of conventional near-field probes. Here, by combining in situ modulation of the filament using a movable ceramic plate and far-field THz time-domain detection, we achieve theoretical and experimental accesses to near-field THz phenomena, namely, the generation of THz surface plasmon waves (SPW) at the plasma frequency within the filament region. Our findings not only deepen the fundamental understanding of THz creation and confinement along the laser-induced plasma filament, but also establish the filament as a free-space, solid-substrate-free platform for THz SPW studies, with potential of advanced THz wave guiding and signal processing applications benefiting from the SPW nature.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"48 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147346650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-03DOI: 10.1021/acsphotonics.5c02736
Peizhi Yu, Yaxuan Liu, Lingyun Zhang, Jingye Sun, Tao Deng
Optoelectronic detectors are critical for converting photon signals into electrical responses, underpinning communication systems, imaging technologies, and environmental monitoring. To address scalability and performance bottlenecks of conventional photodetectors (perovskites, 2D materials, and III–V semiconductors), this work develops a CMOS-compatible grating-gate-MOSFET-based photodetector with extraordinary optical transmission, leveraging finite-difference time-domain simulation for the structural design validation. Four configurations with various interdigital spacings (1.0, 1.5, 2.0, and 2.5 μm) were fabricated by employing a standard 0.8 μm CMOS process. Experiments confirmed exceptional transmission at ∼600 nm visible light, yielding a device responsivity of 2 × 103 A/W, an ultralow noise equivalent power of 1.27 fW/Hz1/2, and a detectivity of 2.54 × 1012 Jones. Additionally, imaging tests with 520 (visible) and 940 nm (infrared) illumination demonstrated its practical application potential. This work provides a scalable and low-cost solution with native silicon integration that overcomes the key limitations of traditional detectors for high-performance optoelectronic systems.
{"title":"Design and Imaging Application Validation for the Visible Light EOT Photodetectors Based on High-Responsivity CMOS-Compatible Grating-Gate MOSFET","authors":"Peizhi Yu, Yaxuan Liu, Lingyun Zhang, Jingye Sun, Tao Deng","doi":"10.1021/acsphotonics.5c02736","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02736","url":null,"abstract":"Optoelectronic detectors are critical for converting photon signals into electrical responses, underpinning communication systems, imaging technologies, and environmental monitoring. To address scalability and performance bottlenecks of conventional photodetectors (perovskites, 2D materials, and III–V semiconductors), this work develops a CMOS-compatible grating-gate-MOSFET-based photodetector with extraordinary optical transmission, leveraging finite-difference time-domain simulation for the structural design validation. Four configurations with various interdigital spacings (1.0, 1.5, 2.0, and 2.5 μm) were fabricated by employing a standard 0.8 μm CMOS process. Experiments confirmed exceptional transmission at ∼600 nm visible light, yielding a device responsivity of 2 × 10<sup>3</sup> A/W, an ultralow noise equivalent power of 1.27 fW/Hz<sup>1/2</sup>, and a detectivity of 2.54 × 10<sup>12</sup> Jones. Additionally, imaging tests with 520 (visible) and 940 nm (infrared) illumination demonstrated its practical application potential. This work provides a scalable and low-cost solution with native silicon integration that overcomes the key limitations of traditional detectors for high-performance optoelectronic systems.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"36 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-03DOI: 10.1021/acsphotonics.5c02644
Debapriya Pal,Toni López,A. Femius Koenderink
Metasurface-based phosphor-converted micro-light emitting diodes (micro-LEDs), powered by nanophotonic designs, are rapidly emerging as a key enabler for next-generation near-eye displays─offering compact, energy-efficient, high-brightness emission with built-in directionality without relying on bulky external optics. However, scaling periodic metasurface designs to sub-5 μm footprints─crucial for AR/VR applications─remains a fundamental challenge, as truncation of large-area periodic structures severely degrades optical performance. We introduce a fast inverse design framework that integrates a genetic evolutionary algorithm with a multiple-scattering Green-function solver to optimize scatterer arrangements within a compact 2.5 × 2.5 μm2 pixel footprint. Our optimized designs boost total emission by 25% and forward-directed brightness by 43%, while also enabling programmable control over angular emission profiles, including beaming into application-specific arbitrary solid angles─compared to truncated periodic references. These improvements arise from tailored multiple-scattering interference enabled by structure-factor engineering that extends beyond the single-scattering regime. This computational approach establishes a general strategy for efficient control of incoherent light emission in ultracompact metasurfaces and paves the way toward high-brightness micro-LED pixels with densities exceeding 104 pixels per inch (PPI) resolution, meeting the stringent demands of future display technologies.
{"title":"Inverse-Designed Metasurfaces Optimize Brightness and Directivity of Micron-Scale Phosphor-Converted Micro-LED Pixels","authors":"Debapriya Pal,Toni López,A. Femius Koenderink","doi":"10.1021/acsphotonics.5c02644","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02644","url":null,"abstract":"Metasurface-based phosphor-converted micro-light emitting diodes (micro-LEDs), powered by nanophotonic designs, are rapidly emerging as a key enabler for next-generation near-eye displays─offering compact, energy-efficient, high-brightness emission with built-in directionality without relying on bulky external optics. However, scaling periodic metasurface designs to sub-5 μm footprints─crucial for AR/VR applications─remains a fundamental challenge, as truncation of large-area periodic structures severely degrades optical performance. We introduce a fast inverse design framework that integrates a genetic evolutionary algorithm with a multiple-scattering Green-function solver to optimize scatterer arrangements within a compact 2.5 × 2.5 μm2 pixel footprint. Our optimized designs boost total emission by 25% and forward-directed brightness by 43%, while also enabling programmable control over angular emission profiles, including beaming into application-specific arbitrary solid angles─compared to truncated periodic references. These improvements arise from tailored multiple-scattering interference enabled by structure-factor engineering that extends beyond the single-scattering regime. This computational approach establishes a general strategy for efficient control of incoherent light emission in ultracompact metasurfaces and paves the way toward high-brightness micro-LED pixels with densities exceeding 104 pixels per inch (PPI) resolution, meeting the stringent demands of future display technologies.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"10 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147346681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-02DOI: 10.1021/acsphotonics.5c02178
Andrew N. Wakileh,Dan Dalacu,Philip J. Poole,Boris Lamontagne,Simona Moisa,Robin L. Williams,Nir Rotenberg
Highly coherent quantum emitters operating in the telecommunication C-band (1530–1565 nm), where ultralow-loss fibers and photonic circuits are available, are crucial to the development of scalable quantum technologies. In this work, we report on a modified Stranski–Krastanov growth scheme using chemical beam epitaxy to enable the generation of high-quality InAs/InP quantum dots, characterized by near-transform-limited line widths (ΓTL). We demonstrate the growth of highly symmetric quantum dots with aspect ratios >0.8 and densities ranging from 2 to 22 μm–2. Optical characterization of these sources reveal fine-structure splittings down to 25 ± 4 μeV and a single-photon purity of g(2)(0) = 0.012 ± 0.007, confirming the quality of these dots. Further, using an etalon to measure the line width, in combination with rigorous modeling, we find an upper-bound to the mean, low-power line widths of only 12.2 ± 6.7 ΓTL and, in the best case, 2.8 ± 1.9 ΓTL. These results represent a significant step in the development of telecom-wavelength quantum light sources, which are essential for complex quantum networks and devices.
{"title":"Approaching Transform-Limited Line Widths in Telecom-Wavelength Transitions of Ungated Quantum Dots","authors":"Andrew N. Wakileh,Dan Dalacu,Philip J. Poole,Boris Lamontagne,Simona Moisa,Robin L. Williams,Nir Rotenberg","doi":"10.1021/acsphotonics.5c02178","DOIUrl":"https://doi.org/10.1021/acsphotonics.5c02178","url":null,"abstract":"Highly coherent quantum emitters operating in the telecommunication C-band (1530–1565 nm), where ultralow-loss fibers and photonic circuits are available, are crucial to the development of scalable quantum technologies. In this work, we report on a modified Stranski–Krastanov growth scheme using chemical beam epitaxy to enable the generation of high-quality InAs/InP quantum dots, characterized by near-transform-limited line widths (ΓTL). We demonstrate the growth of highly symmetric quantum dots with aspect ratios >0.8 and densities ranging from 2 to 22 μm–2. Optical characterization of these sources reveal fine-structure splittings down to 25 ± 4 μeV and a single-photon purity of g(2)(0) = 0.012 ± 0.007, confirming the quality of these dots. Further, using an etalon to measure the line width, in combination with rigorous modeling, we find an upper-bound to the mean, low-power line widths of only 12.2 ± 6.7 ΓTL and, in the best case, 2.8 ± 1.9 ΓTL. These results represent a significant step in the development of telecom-wavelength quantum light sources, which are essential for complex quantum networks and devices.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"10 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147346596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-27DOI: 10.1021/acsphotonics.5c02594
Kyle T. Munson, Cory D. Cress, Khang Diep, Daniel A. Vurgaftman, Jose J. Fonseca, James C. Culbertson, Nicholas Proscia, Paul D. Cunningham, Jeremy T. Robinson
Understanding and controlling nonlinear optical generation in transition metal dichalcogenides (TMDs) is critical for developing scalable photonic devices. Here, we investigate second-harmonic generation (SHG) in Au-supported 2H-WSe2 and noncentrosymmetric 3R-WS2 flakes and explore the impact of dielectric capping with hexagonal boron nitride (hBN). Using SHG microscopy and finite-element modeling, we demonstrate that optical-cavity resonances in Au-supported TMDs strongly enhance SHG, with multilayer 2H-WSe2 flakes exhibiting up to a 40-fold increase in SHG intensity at resonant thicknesses compared to monolayer WSe2 on the same Au substrate. Sequential deposition of hBN layers onto multilayer WSe2/Au optical cavities further enhances SHG by an average of 350% across a ∼70 nm spectral bandwidth by partially impedance matching WSe2 to air and, thereby, improving in and out-coupling at the fundamental and second-harmonic wavelengths. Extending this approach to 3R-WS2, we observe similar optical cavity-mediated enhancement, with SHG intensities up to 700 times that of monolayer WS2 on Au. These results demonstrate cavity engineering and dielectric capping as promising strategies for boosting broadband nonlinear optical responses in both centrosymmetric and noncentrosymmetric TMD flakes, providing design principles for future layered photonic platforms.
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