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Gate-Tunable Current Polarity Switching in p-NiO/n-ZnGa2O4 Heterojunction Field-Effect Phototransistors for Secure Optical Communication
IF 7 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-11 DOI: 10.1021/acsphotonics.4c02509
Dongyang Han, Jiayi Liu, Shujun Zhu, Chang Liu, Kaisen Liu, Xiaoli Zhang, Ningtao Liu, Jichun Ye, Wenrui Zhang
Secure optical communication is crucial for protecting sensitive data in modern communication systems. Herein, we report the gate-tunable current polarity switching phenomenon in p-NiO/n-ZnGa2O4 heterojunction field-effect phototransistors, offering a novel strategy for secure optical communication. The low carrier concentration in the n-type ZnGa2O4 channel layer enables the transistor to persist in the cutoff state under dark conditions. Interestingly, the forward gate voltage application induces a polarity reversal of the drain-source current, with the dark current and photocurrent demonstrating a transition from 0.621 nA/34.53 μA at a gate voltage of 0 V to −0.438 nA/–164.08 μA at a gate voltage of 40 V. Moreover, the device demonstrates outstanding solar-blind ultraviolet (UV) photodetection performance, with responsivities of 53.2 A/W and 252.3 A/W, decay times of 16.44 and 29.35 ms, and rejection ratios exceeding 104 at gate voltages of 0 and 40 V, respectively. By leveraging the gate voltage and solar-blind UV light as inputs, an optoelectronic exclusive OR (XOR) logic gate scheme is designed, where the drain-source current acts as the output. This enables the encoding of optical signals with gate voltage as an encryption signal, ensuring secure information transmission. Even if intercepted, transmitted data remain indecipherable without the encryption signal at the receiver. This research provides a promising avenue for developing advanced secure optical communication technologies.
{"title":"Gate-Tunable Current Polarity Switching in p-NiO/n-ZnGa2O4 Heterojunction Field-Effect Phototransistors for Secure Optical Communication","authors":"Dongyang Han, Jiayi Liu, Shujun Zhu, Chang Liu, Kaisen Liu, Xiaoli Zhang, Ningtao Liu, Jichun Ye, Wenrui Zhang","doi":"10.1021/acsphotonics.4c02509","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02509","url":null,"abstract":"Secure optical communication is crucial for protecting sensitive data in modern communication systems. Herein, we report the gate-tunable current polarity switching phenomenon in p-NiO/n-ZnGa<sub>2</sub>O<sub>4</sub> heterojunction field-effect phototransistors, offering a novel strategy for secure optical communication. The low carrier concentration in the n-type ZnGa<sub>2</sub>O<sub>4</sub> channel layer enables the transistor to persist in the cutoff state under dark conditions. Interestingly, the forward gate voltage application induces a polarity reversal of the drain-source current, with the dark current and photocurrent demonstrating a transition from 0.621 nA/34.53 μA at a gate voltage of 0 V to −0.438 nA/–164.08 μA at a gate voltage of 40 V. Moreover, the device demonstrates outstanding solar-blind ultraviolet (UV) photodetection performance, with responsivities of 53.2 A/W and 252.3 A/W, decay times of 16.44 and 29.35 ms, and rejection ratios exceeding 10<sup>4</sup> at gate voltages of 0 and 40 V, respectively. By leveraging the gate voltage and solar-blind UV light as inputs, an optoelectronic exclusive OR (XOR) logic gate scheme is designed, where the drain-source current acts as the output. This enables the encoding of optical signals with gate voltage as an encryption signal, ensuring secure information transmission. Even if intercepted, transmitted data remain indecipherable without the encryption signal at the receiver. This research provides a promising avenue for developing advanced secure optical communication technologies.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"2 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143393310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear Light Boosting of Anisotropic Lithium Niobate by Anapole States in Plasmonic Nanocavities
IF 7 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-11 DOI: 10.1021/acsphotonics.4c02342
Junzheng Hu, Hui Huang, Renwu Dong, Haiwei Chen, Guangxu Su, Xiaopeng Hu, Fanxin Liu, Peng Zhan
Nonlinear frequency conversion has garnered extensive attention in advancing the functionality of integrable nanophotonics. In recent decades, besides tailoring phase-matching conditions, boosting second-harmonic (SH) generation in nonlinear optics by precisely manipulating the light–matter interactions at the nanoscale was crucial for driving diverse applications that span nonlinear imaging, sensing, and quantum optics on a chip. In this work, we propose an effective strategy for boosting the local SH generation of lithium niobate (LN) and steering its spatial far-field radiation by utilizing the excitation of magnetic anapole states in a gap-plasmon nanocavity. For the first-order magnetic anapole state of the gap-plasmon cavity, when the polarization component along the gap direction aligns with the second-order nonlinear susceptibility (χeee(2)) of anisotropic LN, a dramatically enhanced SH generation with a conversion efficiency of up to ∼0.022 W–1 is achieved, which is about 6 orders of magnitude higher than other nanostructured counterparts. Additionally, when the optical axis of LN is perpendicular to the gap direction, the far-field SH radiation exhibits pronounced polarization-dependent anisotropy. By adjusting the structural parameters, we present the first- or higher-order magnetic anapole states across a range of wavelengths, thereby allowing for the precise control of SH radiation spectrally. Our findings might pave the way for the development of LN-based photonic devices such as on-chip high-efficiency nonlinear light sources.
{"title":"Nonlinear Light Boosting of Anisotropic Lithium Niobate by Anapole States in Plasmonic Nanocavities","authors":"Junzheng Hu, Hui Huang, Renwu Dong, Haiwei Chen, Guangxu Su, Xiaopeng Hu, Fanxin Liu, Peng Zhan","doi":"10.1021/acsphotonics.4c02342","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02342","url":null,"abstract":"Nonlinear frequency conversion has garnered extensive attention in advancing the functionality of integrable nanophotonics. In recent decades, besides tailoring phase-matching conditions, boosting second-harmonic (SH) generation in nonlinear optics by precisely manipulating the light–matter interactions at the nanoscale was crucial for driving diverse applications that span nonlinear imaging, sensing, and quantum optics on a chip. In this work, we propose an effective strategy for boosting the local SH generation of lithium niobate (LN) and steering its spatial far-field radiation by utilizing the excitation of magnetic anapole states in a gap-plasmon nanocavity. For the first-order magnetic anapole state of the gap-plasmon cavity, when the polarization component along the gap direction aligns with the second-order nonlinear susceptibility (χ<sub><i>eee</i></sub><sup>(2)</sup>) of anisotropic LN, a dramatically enhanced SH generation with a conversion efficiency of up to ∼0.022 W<sup>–1</sup> is achieved, which is about 6 orders of magnitude higher than other nanostructured counterparts. Additionally, when the optical axis of LN is perpendicular to the gap direction, the far-field SH radiation exhibits pronounced polarization-dependent anisotropy. By adjusting the structural parameters, we present the first- or higher-order magnetic anapole states across a range of wavelengths, thereby allowing for the precise control of SH radiation spectrally. Our findings might pave the way for the development of LN-based photonic devices such as on-chip high-efficiency nonlinear light sources.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"13 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143393309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles
IF 7 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-11 DOI: 10.1021/acsphotonics.4c01514
Aoqi Fang, Qingqing Li, Jixin Liu, Zaifa Du, Penghao Tang, Hao Xu, Yiyang Xie, Jibin Song, Kaixin Zhang, Tianxi Yang, Qun Yan, Weiling Guo, Jie Sun
This paper reports on a micropillar micro-light-emitting diode (MP-μLED) enhanced by a graphene conductive layer and SiO2-coated Ag nanoparticles (Ag/SiO2 NPs). The micropillar structure enables direct contact between Ag/SiO2 NPs and the quantum well (QW), leveraging localized surface plasmon resonance (LSPR) to enhance the emission of QW. The SiO2 coating on Ag serves as an insulating layer, preventing energy leakage through electron tunneling between QW–Ag and Ag–Ag interfaces. Graphene, used as a transparent conductive layer, integrates the individual micropillars into a cohesive structure, ensuring efficient current spreading and uniform light emission. Compared to plane μLEDs of the same mesa size, the MP-μLED with graphene transparent electrodes and LSPR enhancement shows an improvement of 44% in external quantum efficiency (EQE) and 45% in wall plug efficiency (WPE) at a current density of 1000 A/cm2. This study demonstrates the significant application potential of LSPR and micropillar structures in μLED technology.
{"title":"Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles","authors":"Aoqi Fang, Qingqing Li, Jixin Liu, Zaifa Du, Penghao Tang, Hao Xu, Yiyang Xie, Jibin Song, Kaixin Zhang, Tianxi Yang, Qun Yan, Weiling Guo, Jie Sun","doi":"10.1021/acsphotonics.4c01514","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01514","url":null,"abstract":"This paper reports on a micropillar micro-light-emitting diode (MP-μLED) enhanced by a graphene conductive layer and SiO<sub>2</sub>-coated Ag nanoparticles (Ag/SiO<sub>2</sub> NPs). The micropillar structure enables direct contact between Ag/SiO<sub>2</sub> NPs and the quantum well (QW), leveraging localized surface plasmon resonance (LSPR) to enhance the emission of QW. The SiO<sub>2</sub> coating on Ag serves as an insulating layer, preventing energy leakage through electron tunneling between QW–Ag and Ag–Ag interfaces. Graphene, used as a transparent conductive layer, integrates the individual micropillars into a cohesive structure, ensuring efficient current spreading and uniform light emission. Compared to plane μLEDs of the same mesa size, the MP-μLED with graphene transparent electrodes and LSPR enhancement shows an improvement of 44% in external quantum efficiency (EQE) and 45% in wall plug efficiency (WPE) at a current density of 1000 A/cm<sup>2</sup>. This study demonstrates the significant application potential of LSPR and micropillar structures in μLED technology.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"18 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143393757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Giant Helical Dichroism in Twisted Hollow-Core Photonic Crystal Fibers
IF 7 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-09 DOI: 10.1021/acsphotonics.4c02019
Christof Helfrich, Michael H. Frosz, Francesco Tani
We show that twisted single-ring hollow-core fibers can exhibit strong helical dichroism, i.e., a different transmission depending on the orbital angular momentum of the launched light. Experimentally, we observe loss differences of at least 40 dB/m over a broad spectral range (>60 THz). We investigate the effect via analytical and numerical studies and show that considerably higher differential loss can be achieved over a broader spectral range (>180 THz). Our observation provides new routes for controlling the polarization state, extends previous studies of circularly dichroic waveguides, and has many potential applications, such as the realization of new polarizing elements in previously inaccessible spectral regions, chiral sensing, broadband generation of vortex beams, and optical communication.
{"title":"Giant Helical Dichroism in Twisted Hollow-Core Photonic Crystal Fibers","authors":"Christof Helfrich, Michael H. Frosz, Francesco Tani","doi":"10.1021/acsphotonics.4c02019","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02019","url":null,"abstract":"We show that twisted single-ring hollow-core fibers can exhibit strong helical dichroism, i.e., a different transmission depending on the orbital angular momentum of the launched light. Experimentally, we observe loss differences of at least 40 dB/m over a broad spectral range (&gt;60 THz). We investigate the effect via analytical and numerical studies and show that considerably higher differential loss can be achieved over a broader spectral range (&gt;180 THz). Our observation provides new routes for controlling the polarization state, extends previous studies of circularly dichroic waveguides, and has many potential applications, such as the realization of new polarizing elements in previously inaccessible spectral regions, chiral sensing, broadband generation of vortex beams, and optical communication.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"86 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Giant Helical Dichroism in Twisted Hollow-Core Photonic Crystal Fibers
IF 6.5 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-09 DOI: 10.1021/acsphotonics.4c0201910.1021/acsphotonics.4c02019
Christof Helfrich, Michael H. Frosz and Francesco Tani*, 

We show that twisted single-ring hollow-core fibers can exhibit strong helical dichroism, i.e., a different transmission depending on the orbital angular momentum of the launched light. Experimentally, we observe loss differences of at least 40 dB/m over a broad spectral range (>60 THz). We investigate the effect via analytical and numerical studies and show that considerably higher differential loss can be achieved over a broader spectral range (>180 THz). Our observation provides new routes for controlling the polarization state, extends previous studies of circularly dichroic waveguides, and has many potential applications, such as the realization of new polarizing elements in previously inaccessible spectral regions, chiral sensing, broadband generation of vortex beams, and optical communication.

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引用次数: 0
Topologically Protected Edge States in Time Photonic Crystals with Chiral Symmetry
IF 7 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-07 DOI: 10.1021/acsphotonics.4c01785
Yukun Yang, Hao Hu, Liangliang Liu, Yihao Yang, Youxiu Yu, Yang Long, Xuezhi Zheng, Yu Luo, Zhuo Li, Francisco J. Garcia-Vidal
Time photonic crystals are media in which their electromagnetic parameters are modulated periodically in time, showing promising applications in non-resonant lasers and particle accelerators, among others. Traditionally utilized to study space photonic crystals, topological band theory has also been translated recently to analyze time photonic crystals with time inversion symmetry, enabling the construction of the temporal version of topological edge states. However, temporal disorders can readily break time inversion symmetry in practice, hence likely destroying the edge states associated with this type of time photonic crystals. To overcome this limitation, here we propose a new class of time photonic crystals presenting chiral symmetry instead, whose edge states exhibit superior robustness over the time-reversal-symmetry-protected counterparts. Our time photonic crystal is equivalent to a temporal version of the Su–Schrieffer–Heeger model, and the chiral symmetry of this type of time photonic crystals quantizes the winding number defined in the Bloch frequency band. Remarkably, random temporal disorders do not impact the eigenfrequencies of these chiral-symmetry-protected edge states, while instead enhancing their temporal localizations. Our findings thus provide a promising paradigm to control field amplification with exceptional robustness as well as being a feasible platform to investigate various topological phases in time-varying media.
{"title":"Topologically Protected Edge States in Time Photonic Crystals with Chiral Symmetry","authors":"Yukun Yang, Hao Hu, Liangliang Liu, Yihao Yang, Youxiu Yu, Yang Long, Xuezhi Zheng, Yu Luo, Zhuo Li, Francisco J. Garcia-Vidal","doi":"10.1021/acsphotonics.4c01785","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01785","url":null,"abstract":"Time photonic crystals are media in which their electromagnetic parameters are modulated periodically in time, showing promising applications in non-resonant lasers and particle accelerators, among others. Traditionally utilized to study space photonic crystals, topological band theory has also been translated recently to analyze time photonic crystals with time inversion symmetry, enabling the construction of the temporal version of topological edge states. However, temporal disorders can readily break time inversion symmetry in practice, hence likely destroying the edge states associated with this type of time photonic crystals. To overcome this limitation, here we propose a new class of time photonic crystals presenting chiral symmetry instead, whose edge states exhibit superior robustness over the time-reversal-symmetry-protected counterparts. Our time photonic crystal is equivalent to a temporal version of the Su–Schrieffer–Heeger model, and the chiral symmetry of this type of time photonic crystals quantizes the winding number defined in the Bloch frequency band. Remarkably, random temporal disorders do not impact the eigenfrequencies of these chiral-symmetry-protected edge states, while instead enhancing their temporal localizations. Our findings thus provide a promising paradigm to control field amplification with exceptional robustness as well as being a feasible platform to investigate various topological phases in time-varying media.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"8 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143258018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband Photoresponse Enhancement by Band Engineering in Sb-Doped MnBi2Te4
IF 7 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-06 DOI: 10.1021/acsphotonics.4c02182
Zixuan Xu, Haonan Chen, Jiayu Wang, Yicheng Mou, Yingchao Xia, Jiaming Gu, Yuxiang Wang, Qi Liu, Jiaqi Liu, Wenqing Song, Qing Lan, Tuoyu Zhao, Wu Shi, Cheng Zhang
Topological materials have attracted considerable attention for their potential in broadband and fast photoresponses, particularly in the infrared regime. However, the high carrier concentration in these systems often leads to rapid recombination of photogenerated carriers, limiting the photoresponsivity. Here, we demonstrate that Sb doping in MnBi2Te4 effectively reduces carrier concentration and suppresses electron–hole recombination, thereby significantly improving the optoelectronic performance across the visible to mid-infrared spectra. The optimally doped Mn(Bi0.82Sb0.18)2Te4 photodetector achieves a responsivity of 3.02 mA W–1 with a response time of 18.5 μs at 1550 nm, and 0.795 mA W–1 with a response time of 9.0 μs at 4 μm. These values represent nearly 2 orders of magnitude improvement compared to undoped MnBi2Te4. Our results highlight band engineering as an effective strategy to enhance the infrared performance of topological material-based photodetectors, opening new avenues for high-sensitivity infrared detection.
{"title":"Broadband Photoresponse Enhancement by Band Engineering in Sb-Doped MnBi2Te4","authors":"Zixuan Xu, Haonan Chen, Jiayu Wang, Yicheng Mou, Yingchao Xia, Jiaming Gu, Yuxiang Wang, Qi Liu, Jiaqi Liu, Wenqing Song, Qing Lan, Tuoyu Zhao, Wu Shi, Cheng Zhang","doi":"10.1021/acsphotonics.4c02182","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02182","url":null,"abstract":"Topological materials have attracted considerable attention for their potential in broadband and fast photoresponses, particularly in the infrared regime. However, the high carrier concentration in these systems often leads to rapid recombination of photogenerated carriers, limiting the photoresponsivity. Here, we demonstrate that Sb doping in MnBi<sub>2</sub>Te<sub>4</sub> effectively reduces carrier concentration and suppresses electron–hole recombination, thereby significantly improving the optoelectronic performance across the visible to mid-infrared spectra. The optimally doped Mn(Bi<sub>0.82</sub>Sb<sub>0.18</sub>)<sub>2</sub>Te<sub>4</sub> photodetector achieves a responsivity of 3.02 mA W<sup>–1</sup> with a response time of 18.5 μs at 1550 nm, and 0.795 mA W<sup>–1</sup> with a response time of 9.0 μs at 4 μm. These values represent nearly 2 orders of magnitude improvement compared to undoped MnBi<sub>2</sub>Te<sub>4</sub>. Our results highlight band engineering as an effective strategy to enhance the infrared performance of topological material-based photodetectors, opening new avenues for high-sensitivity infrared detection.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"22 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143258142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Regulation of Additive-Cs+ Interactions for Efficient Cesium Copper Iodide Light-Emitting Diodes
IF 6.5 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-06 DOI: 10.1021/acsphotonics.4c0248510.1021/acsphotonics.4c02485
Chunxue Zhuo, Chengcheng Wang, Pinliang Xie, Zhiyuan Kuang, Yuyang Zhang, Junjie Feng, Mian Dai, Nana Chen, Lei Xu, Xiaozhen Li, Jin Chang* and Jianpu Wang*, 

Molecular additives are widely used to improve the film quality and optoelectronic performance of solution-processed metal halides, owing to their diverse interactions with metal-halide precursors. However, the relationship between additive-precursor interaction strength and the optoelectronic performance of metal halides remains unclear. In this study, we investigate cesium copper iodide (Cs–Cu–I) light-emitting diodes (LEDs) incorporating crown ether (CE) additives and demonstrate that the additive-Cs+ interactions can significantly influence the device performance. By regulating the additive-Cs+ interaction strength, we achieve Cs–Cu–I LEDs with a peak external quantum efficiency of 4.5%, over 20 times higher than that of the control device. The remarkable EQE enhancement is primarily attributed to the suitable additive-Cs+ interactions, which enable a gradual release of free precursors to participate in the crystallization of Cs–Cu–I, thus improving the crystalline quality of emissive films. This work not only provides valuable insights into the rational design of molecular additives for copper halide LEDs but also offers guidance for other metal halide optoelectronic devices, particularly those involving additive-precursor interactions.

{"title":"Regulation of Additive-Cs+ Interactions for Efficient Cesium Copper Iodide Light-Emitting Diodes","authors":"Chunxue Zhuo,&nbsp;Chengcheng Wang,&nbsp;Pinliang Xie,&nbsp;Zhiyuan Kuang,&nbsp;Yuyang Zhang,&nbsp;Junjie Feng,&nbsp;Mian Dai,&nbsp;Nana Chen,&nbsp;Lei Xu,&nbsp;Xiaozhen Li,&nbsp;Jin Chang* and Jianpu Wang*,&nbsp;","doi":"10.1021/acsphotonics.4c0248510.1021/acsphotonics.4c02485","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c02485https://doi.org/10.1021/acsphotonics.4c02485","url":null,"abstract":"<p >Molecular additives are widely used to improve the film quality and optoelectronic performance of solution-processed metal halides, owing to their diverse interactions with metal-halide precursors. However, the relationship between additive-precursor interaction strength and the optoelectronic performance of metal halides remains unclear. In this study, we investigate cesium copper iodide (Cs–Cu–I) light-emitting diodes (LEDs) incorporating crown ether (CE) additives and demonstrate that the additive-Cs<sup>+</sup> interactions can significantly influence the device performance. By regulating the additive-Cs<sup>+</sup> interaction strength, we achieve Cs–Cu–I LEDs with a peak external quantum efficiency of 4.5%, over 20 times higher than that of the control device. The remarkable EQE enhancement is primarily attributed to the suitable additive-Cs<sup>+</sup> interactions, which enable a gradual release of free precursors to participate in the crystallization of Cs–Cu–I, thus improving the crystalline quality of emissive films. This work not only provides valuable insights into the rational design of molecular additives for copper halide LEDs but also offers guidance for other metal halide optoelectronic devices, particularly those involving additive-precursor interactions.</p>","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"12 2","pages":"1227–1234 1227–1234"},"PeriodicalIF":6.5,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143436277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Breaking the Size Limit of Room-Temperature Prepared Lead Sulfide Colloidal Quantum Dots for High-Performance Short-Wave Infrared Optoelectronics
IF 6.5 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-06 DOI: 10.1021/acsphotonics.4c0225810.1021/acsphotonics.4c02258
Yin-Fen Ma, Jian Xu, Kelei Zu, You-Mei Wang, Juntao Hu, Nan Chen, Dong-Ming Zhang, Ao Li, Dengke Wang, Huaiyi Ding, Mei Leng*, Yong-Biao Zhao* and Zheng-Hong Lu, 

Lead sulfide (PbS) colloidal quantum dots (CQDs) are of great interest for short-wave infrared (SWIR) optoelectronic devices due to their tunable bandgaps across the whole SWIR spectra. PbS CQD inks synthesized directly at room temperature (RT) and ready for the fabrication of various SWIR devices are highly demanded. There are currently no available protocols for RT synthesis of PbS CQDs with absorption beyond 1200 nm. Here, we report on the first synthesis of PbS CQDs at RT with an absorption beyond 1800 nm. There is a delicate balance between nucleation of new seeds and growth of existing dots regulated by the lead-to-sulfur (Pb/S) precursor ratio in the reaction medium, and a proper Pb/S ratio ranging from 1.1 to 2 should be maintained to keep the continuous growth. Photodiodes based on PbS CQDs with a 1550 nm excitonic absorption are fabricated to demonstrate their suitability for device applications. The resulting devices achieve a high photo responsivity of 0.635 A/W, a specific detectivity of 1.01 × 1011 Jones, and a fast response with rise and fall times of 1.08 and 1.10 μs, respectively.

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引用次数: 0
High-Efficiency Solar Hybrid Photovoltaic/Thermal System Enabled by Ultrathin Asymmetric Fabry–Perot Cavity
IF 6.5 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-06 DOI: 10.1021/acsphotonics.4c0131510.1021/acsphotonics.4c01315
Ran Wei, Tianshu Xu and Chunlei Guo*, 

Solar hybrid photovoltaic/thermal (HPT) systems maximize the overall solar energy conversion by simultaneously converting solar energy into electrical and thermal energy. However, the practical implementation of HPT systems is hindered by a lack of suitable optical materials capable of efficiently splitting the incident solar spectrum into the desired photovoltaic (PV) and photothermal (PT) bands. In this work, we provide the first demonstration of a multifunctional asymmetric metal-dielectric-metal (asym-MDM) optical coating to be used in an HPT system. The asym-MDM serves as the dual function of a quad-band spectrum splitter and a thermal receiver, leveraging on the multiorder spectral responses and the lossy nature of nickel. Moreover, silica aerogel is employed as a transparent insulting material to enhance the thermal storage capability, while the heat is effectively utilized for increasing the temperature difference of a thermoelectric generator (TEG). As a result, a simple and highly compact HPT system is developed, with simultaneous extraordinary heat mitigation of the single-junction amorphous silicon solar cell and heat generation at the hot side of the TEG. This leads to 63.9 and 370% performance improvements for the PV and PT subsystems at a solar concentration of 3, respectively. Asym-MDM will provide a low-cost yet high-efficiency solution for application of an HPT system in solar energy harnessing.

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引用次数: 0
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ACS Photonics
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