Pub Date : 2024-11-25DOI: 10.1021/acsphotonics.4c01238
Liao Duan, Trevor J. Steiner, Paolo Pintus, Lillian Thiel, Joshua E. Castro, John E. Bowers, Galan Moody
Correlated photon-pair sources are key components for quantum computing, networking, synchronization, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate time–energy and polarization entanglement at telecom wavelengths with sub-100 microwatt pump power. Many quantum systems operate in the visible or near-infrared ranges, necessitating visible-telecom entangled-pair sources for connecting remote systems via entanglement swapping and teleportation. This study evaluates biphoton pair generation and time–energy entanglement through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III–V materials that expands the operational wavelength range.
{"title":"Visible-Telecom Entangled-Photon Pair Generation with Integrated Photonics: Guidelines and a Materials Comparison","authors":"Liao Duan, Trevor J. Steiner, Paolo Pintus, Lillian Thiel, Joshua E. Castro, John E. Bowers, Galan Moody","doi":"10.1021/acsphotonics.4c01238","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01238","url":null,"abstract":"Correlated photon-pair sources are key components for quantum computing, networking, synchronization, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate time–energy and polarization entanglement at telecom wavelengths with sub-100 microwatt pump power. Many quantum systems operate in the visible or near-infrared ranges, necessitating visible-telecom entangled-pair sources for connecting remote systems via entanglement swapping and teleportation. This study evaluates biphoton pair generation and time–energy entanglement through spontaneous four-wave mixing in various nonlinear integrated photonic materials, including silicon nitride, lithium niobate, aluminum gallium arsenide, indium gallium phosphide, and gallium nitride. We demonstrate how geometric dispersion engineering facilitates phase-matching for each platform and reveals unexpected results, such as robust designs to fabrication variations and a Type-1 cross-polarized phase-matching condition for III–V materials that expands the operational wavelength range.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"71 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142696950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1021/acsphotonics.4c01774
Himanshu Bhatt, Ramchandra Saha, Tanmay Goswami, Sangeetha C. K., Kaliyamoorthy Justice Babu, Gurpreet Kaur, Ayushi Shukla, Mahammed Suleman Patel, Sachin R. Rondiya, Nelson Y. Dzade, Hirendra N. Ghosh
The performance of photovoltaic devices relies on the light-absorbing capability of the absorber layer and the lifetime of excited-state charge carriers. Combining two-dimensional transition metal dichalcogenides (TMDCs) with perovskites in heterojunctions shows immense potential due to their strong light–matter interaction, excellent charge carrier mobility, long electron–hole diffusion length, and improved stability. However, fast charge carrier recombination in TMDCs and poor charge separation at the interface limit their efficiency. In this direction, band structure modulation can be a key approach to improving the charge separation in these heterojunctions. Herein, we have fabricated a heterojunction of CsPbI3 and WS2 (CPI-WS2) and modulated the band levels by incorporating Ni atoms into CPI. Experimental and theoretical analyses reveal that Ni-doping elevates both the valence and conduction bands of CPI, transforming the quasi-type II band arrangement of CPI-WS2 into a type II configuration. The doped heterosystem shows substantial charge carrier separation at the interface, with TMDC acting as the electron extractor. This higher segregation of charges notably improves the photocurrent and photoresponsivity within the modulated heterojunctions. This study underscores the importance of doping-induced band-level engineering for promoting charge carrier separation at the TMDC-perovskite interface, advancing the design of advanced optical devices based on heterojunctions.
光伏设备的性能取决于吸收层的光吸收能力和激发态电荷载流子的寿命。由于二维过渡金属二掺杂物（TMDCs）具有很强的光-物质相互作用、出色的电荷载流子迁移率、较长的电子-空穴扩散长度和更高的稳定性，因此将其与包晶结合在异质结中显示出巨大的潜力。然而，TMDC 中快速的电荷载流子重组和界面上较差的电荷分离限制了它们的效率。因此，带状结构调制是改善这些异质结电荷分离的关键方法。在此，我们制作了 CsPbI3 和 WS2 异质结（CPI-WS2），并通过在 CPI 中加入镍原子调制了带能级。实验和理论分析表明，掺杂镍原子可同时提升 CPI 的价带和导带，将 CPI-WS2 的准 II 型能带排列转变为 II 型构型。掺杂异质系统在界面上显示出大量的电荷载流子分离，而 TMDC 则充当了电子提取器的角色。这种较高的电荷分离显著提高了调制异质结内的光电流和光致发光性。这项研究强调了掺杂引发的带级工程对于促进 TMDC-perovskite 界面的电荷载流子分离的重要性，从而推动了基于异质结的先进光学器件的设计。
{"title":"Charge Transfer Modulation in the α-CsPbI3/WS2 Heterojunction via Band-Tailoring with Elemental Ni Doping","authors":"Himanshu Bhatt, Ramchandra Saha, Tanmay Goswami, Sangeetha C. K., Kaliyamoorthy Justice Babu, Gurpreet Kaur, Ayushi Shukla, Mahammed Suleman Patel, Sachin R. Rondiya, Nelson Y. Dzade, Hirendra N. Ghosh","doi":"10.1021/acsphotonics.4c01774","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01774","url":null,"abstract":"The performance of photovoltaic devices relies on the light-absorbing capability of the absorber layer and the lifetime of excited-state charge carriers. Combining two-dimensional transition metal dichalcogenides (TMDCs) with perovskites in heterojunctions shows immense potential due to their strong light–matter interaction, excellent charge carrier mobility, long electron–hole diffusion length, and improved stability. However, fast charge carrier recombination in TMDCs and poor charge separation at the interface limit their efficiency. In this direction, band structure modulation can be a key approach to improving the charge separation in these heterojunctions. Herein, we have fabricated a heterojunction of CsPbI<sub>3</sub> and WS<sub>2</sub> (CPI-WS<sub>2</sub>) and modulated the band levels by incorporating Ni atoms into CPI. Experimental and theoretical analyses reveal that Ni-doping elevates both the valence and conduction bands of CPI, transforming the quasi-type II band arrangement of CPI-WS<sub>2</sub> into a type II configuration. The doped heterosystem shows substantial charge carrier separation at the interface, with TMDC acting as the electron extractor. This higher segregation of charges notably improves the photocurrent and photoresponsivity within the modulated heterojunctions. This study underscores the importance of doping-induced band-level engineering for promoting charge carrier separation at the TMDC-perovskite interface, advancing the design of advanced optical devices based on heterojunctions.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"77 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-24DOI: 10.1021/acsphotonics.4c01821
Jinze He, Xingyu Jia, Bing-Yan Wei, Guanhao Wu, Yang Li
To date, orbital angular momentum (OAM) and electro-optical frequency combs (EOFCs) are two distinct fields of research without too much association. Herein, we generated the OAM-EOFCs by applying electro-optic phase modulation to the OAM beam. We verified the OAM characteristic of the EOFCs’ sidebands and demonstrated the dispersion-induced spiral fringe rotation in the interference process. Leveraging the optical rotational Doppler effect of the OAM beam and the intermode beat signal of EOFCs, we achieved rotational speed measurement and absolute distance measurement using a single OAM-EOFC. We also demonstrated, for the first time, the simultaneous measurement of rotational speed and absolute distance of rough objects by tuning the repetition rate of EOFCs. Leveraging the large scanning range of the repetition rate of OAM-EOFC’s high-order sidebands of the OAM-EOFC, we obtained an Allan deviation of distance measurement as low as 570.12 μm at an averaged time of 3.87 s under a distance of 17.1664 m, while the error of rotational speed measurement is down to 0.44%. Our study bridges two distinct research fields, EOFCs and OAM, opening the door to various fundamental research avenues and applications, including large-capacity optical communications, high-security optical encryption, and multidimensional photon entanglement.
{"title":"Electro-Optic Frequency Combs Carrying Orbital Angular Momentum","authors":"Jinze He, Xingyu Jia, Bing-Yan Wei, Guanhao Wu, Yang Li","doi":"10.1021/acsphotonics.4c01821","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01821","url":null,"abstract":"To date, orbital angular momentum (OAM) and electro-optical frequency combs (EOFCs) are two distinct fields of research without too much association. Herein, we generated the OAM-EOFCs by applying electro-optic phase modulation to the OAM beam. We verified the OAM characteristic of the EOFCs’ sidebands and demonstrated the dispersion-induced spiral fringe rotation in the interference process. Leveraging the optical rotational Doppler effect of the OAM beam and the intermode beat signal of EOFCs, we achieved rotational speed measurement and absolute distance measurement using a single OAM-EOFC. We also demonstrated, for the first time, the simultaneous measurement of rotational speed and absolute distance of rough objects by tuning the repetition rate of EOFCs. Leveraging the large scanning range of the repetition rate of OAM-EOFC’s high-order sidebands of the OAM-EOFC, we obtained an Allan deviation of distance measurement as low as 570.12 μm at an averaged time of 3.87 s under a distance of 17.1664 m, while the error of rotational speed measurement is down to 0.44%. Our study bridges two distinct research fields, EOFCs and OAM, opening the door to various fundamental research avenues and applications, including large-capacity optical communications, high-security optical encryption, and multidimensional photon entanglement.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"48 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142696520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-22DOI: 10.1021/acsphotonics.4c01356
Hengsong Yue, Yuan Yan, Bo Xiong, Tao Chu
Radio frequency (RF) signal modulation and generation are crucial technologies for advanced radar systems and high-speed wireless communications. Compared with traditional electronic RF modulators, optically tunable RF modulators offer a wide bandwidth, rapid response, and dynamic tuning, among other features. These characteristics render these modulators viable solutions for satisfying the evolving demands of modern wireless communication systems. However, their practical applications are challenging due to their lack of scalability and compactness, as well as their high optical power requirements. This study demonstrates the generation of optically tunable microwave signals using an optically tunable silicon-based RF modulator. The optical tuning was achieved through the photoelectric effect of the germanium absorption region on a silicon photonic platform. When light is incident on the Ge absorption region, it generates charge carriers, thereby altering the equivalent circuit parameters of the device. Consequently, the frequency response of the RF modulators is altered. This effect was used for the generation of amplitude-frequency coded microwave signals at 1, 2.5, and 5 MHz. Both the optical power required for tuning and the response speed are orders of magnitude lower than those of free-space-illumination-based devices. Additionally, the generation of microwave signals was demonstrated by applying this modulator to an optically tunable RF oscillator, with a frequency-tuning range from 1 to 14.5 GHz.
{"title":"High-Speed Optically Tunable RF Signal Generation with Low Power Threshold Based on On-Chip Germanium Photoelectric Effect","authors":"Hengsong Yue, Yuan Yan, Bo Xiong, Tao Chu","doi":"10.1021/acsphotonics.4c01356","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01356","url":null,"abstract":"Radio frequency (RF) signal modulation and generation are crucial technologies for advanced radar systems and high-speed wireless communications. Compared with traditional electronic RF modulators, optically tunable RF modulators offer a wide bandwidth, rapid response, and dynamic tuning, among other features. These characteristics render these modulators viable solutions for satisfying the evolving demands of modern wireless communication systems. However, their practical applications are challenging due to their lack of scalability and compactness, as well as their high optical power requirements. This study demonstrates the generation of optically tunable microwave signals using an optically tunable silicon-based RF modulator. The optical tuning was achieved through the photoelectric effect of the germanium absorption region on a silicon photonic platform. When light is incident on the Ge absorption region, it generates charge carriers, thereby altering the equivalent circuit parameters of the device. Consequently, the frequency response of the RF modulators is altered. This effect was used for the generation of amplitude-frequency coded microwave signals at 1, 2.5, and 5 MHz. Both the optical power required for tuning and the response speed are orders of magnitude lower than those of free-space-illumination-based devices. Additionally, the generation of microwave signals was demonstrated by applying this modulator to an optically tunable RF oscillator, with a frequency-tuning range from 1 to 14.5 GHz.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"34 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-22DOI: 10.1021/acsphotonics.4c01005
Ioannis Katsantonis, Anna C. Tasolamprou, Eleftherios N. Economou, Thomas Koschny, Maria Kafesaki
We demonstrate a simple, low-cost, and ultracompact chiral resonant metasurface design, which, by strong local coupling to a quantum gain medium (quantum emitters), allows to implement an ultrathin metasurface laser, capable of generating tunable circularly polarized coherent lasing output. According to our detailed numerical investigations, the lasing emission can be transformed from linear to circular and switch from right- to left-handed circularly polarized (CP) not only by altering the metasurface chiral response but also by changing the polarization of a linearly polarized pump wave, thus enabling dynamic lasing-polarization control. Given the increasing interest for CP laser emission, our chiral metasurface laser design proves to be a versatile yet straightforward strategy to generate a strong and tailored CP emission laser, promising great potential for future applications in both photonics and materials science.
{"title":"Ultrathin, Dynamically Controllable Circularly Polarized Emission Laser Enabled by Resonant Chiral Metasurfaces","authors":"Ioannis Katsantonis, Anna C. Tasolamprou, Eleftherios N. Economou, Thomas Koschny, Maria Kafesaki","doi":"10.1021/acsphotonics.4c01005","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01005","url":null,"abstract":"We demonstrate a simple, low-cost, and ultracompact chiral resonant metasurface design, which, by strong local coupling to a quantum gain medium (quantum emitters), allows to implement an ultrathin metasurface laser, capable of generating tunable circularly polarized coherent lasing output. According to our detailed numerical investigations, the lasing emission can be transformed from linear to circular and switch from right- to left-handed circularly polarized (CP) not only by altering the metasurface chiral response but also by changing the polarization of a linearly polarized pump wave, thus enabling dynamic lasing-polarization control. Given the increasing interest for CP laser emission, our chiral metasurface laser design proves to be a versatile yet straightforward strategy to generate a strong and tailored CP emission laser, promising great potential for future applications in both photonics and materials science.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"2 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-21DOI: 10.1021/acsphotonics.4c01658
Shihan Hong, Long Zhang, Yuluan Xiang, Dajian Liu, Zhihuan Ding, Daoxin Dai
On-chip spectrometers offer great opportunity for developing wearable monitoring devices, industrial remote sensing systems, and agricultural evaluation. In practical application scenarios, the spectrometer is imperative to be highly integrated and capable of processing light signals with randomly polarized states in the environment. Here, we propose and demonstrate a monolithically integrated silicon photonic spectrometer with a compact footprint of 0.24 × 1.0 mm2 for arbitrarily polarized light for the first time. The spectrometer couples the light with uncertain polarization states to the TE0 modes guided in two separated waveguides using a polarization splitter rotator. These two TE0 modes are then filtered and received with a very concise configuration by utilizing the unique bidirectionality of a tunable adiabatic elliptical-microring with the maximized free spectral range and a monolithically integrated Ge/Si photodetector (PD). Measurement results show the present spectrometer achieves a broad operation window of 36.5 nm as well as a high resolution of 0.2 nm. The lowest detectable power is characterized experimentally, demonstrating the capability to detect the spectra with a low peak power of −55 dBm and distinguish a peak power difference as high as 45 dB with the integrated Ge/Si PD. As a result, the broadband complex spectra reconstruction with arbitrary polarization states demonstrates our spectrometer is featuring monolithic integration and polarization-insensitive operation.
{"title":"Monolithically Integrated Silicon Photonic Spectrometer for Arbitrarily Polarized Light","authors":"Shihan Hong, Long Zhang, Yuluan Xiang, Dajian Liu, Zhihuan Ding, Daoxin Dai","doi":"10.1021/acsphotonics.4c01658","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01658","url":null,"abstract":"On-chip spectrometers offer great opportunity for developing wearable monitoring devices, industrial remote sensing systems, and agricultural evaluation. In practical application scenarios, the spectrometer is imperative to be highly integrated and capable of processing light signals with randomly polarized states in the environment. Here, we propose and demonstrate a monolithically integrated silicon photonic spectrometer with a compact footprint of 0.24 × 1.0 mm<sup>2</sup> for arbitrarily polarized light for the first time. The spectrometer couples the light with uncertain polarization states to the TE<sub>0</sub> modes guided in two separated waveguides using a polarization splitter rotator. These two TE<sub>0</sub> modes are then filtered and received with a very concise configuration by utilizing the unique bidirectionality of a tunable adiabatic elliptical-microring with the maximized free spectral range and a monolithically integrated Ge/Si photodetector (PD). Measurement results show the present spectrometer achieves a broad operation window of 36.5 nm as well as a high resolution of 0.2 nm. The lowest detectable power is characterized experimentally, demonstrating the capability to detect the spectra with a low peak power of −55 dBm and distinguish a peak power difference as high as 45 dB with the integrated Ge/Si PD. As a result, the broadband complex spectra reconstruction with arbitrary polarization states demonstrates our spectrometer is featuring monolithic integration and polarization-insensitive operation.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"18 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Controlling the optoelectronic properties of semiconductors by an electric field is crucial for modern electronics, information processing, computing devices, and optical communication. The electrically switchable polarization feature of ferroelectrics offers the potential for manipulating light–matter interactions. Herein, we demonstrate the electrically switchable bipolar polarization-sensitive photodetection in a biaxial ferroelectric semiconductor (4,4-DFPD)2PbI4 (4,4-DFPD is 4,4-difluoropiperidinium). By altering the polarization direction via an electric field, we induce corresponding changes in the anisotropic photoresponse, which is driven by the bulk photovoltaic effect. Based on this phenomenon, we put forward an encrypted optical communication model defined by biaxial ferroelectrics and successfully implement the encryption/decryption transmission process of SOS signals. This work provides new insights into the electrical control of light–matter interactions and multiaxial ferroelectric optoelectronic applications.
通过电场控制半导体的光电特性对于现代电子学、信息处理、计算设备和光通信至关重要。铁电体的电可切换偏振特性为操纵光-物质相互作用提供了潜力。在此，我们展示了双轴铁电半导体 (4,4-DFPD)2PbI4 （4,4-DFPD 是 4,4-二氟哌啶）中可电切换的双极偏振敏感光电探测。通过电场改变极化方向，我们诱发了各向异性光响应的相应变化，这种变化是由体光伏效应驱动的。基于这一现象，我们提出了一种由双轴铁电定义的加密光通信模型，并成功实现了 SOS 信号的加密/解密传输过程。这项工作为光物相互作用的电学控制和多轴铁电光电应用提供了新的见解。
{"title":"Electrically Switchable Bipolar Polarization-Sensitive Photodetection Based on a Biaxial Ferroelectric Semiconductor","authors":"Cheng-Dong Liu, Chang-Chun Fan, Bei-Dou Liang, Wei Wang, Ming-Liang Jin, Wen Zhang","doi":"10.1021/acsphotonics.4c01793","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01793","url":null,"abstract":"Controlling the optoelectronic properties of semiconductors by an electric field is crucial for modern electronics, information processing, computing devices, and optical communication. The electrically switchable polarization feature of ferroelectrics offers the potential for manipulating light–matter interactions. Herein, we demonstrate the electrically switchable bipolar polarization-sensitive photodetection in a biaxial ferroelectric semiconductor (4,4-DFPD)<sub>2</sub>PbI<sub>4</sub> (4,4-DFPD is 4,4-difluoropiperidinium). By altering the polarization direction via an electric field, we induce corresponding changes in the anisotropic photoresponse, which is driven by the bulk photovoltaic effect. Based on this phenomenon, we put forward an encrypted optical communication model defined by biaxial ferroelectrics and successfully implement the encryption/decryption transmission process of SOS signals. This work provides new insights into the electrical control of light–matter interactions and multiaxial ferroelectric optoelectronic applications.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"1 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-21DOI: 10.1021/acsphotonics.4c01502
Chang Chang, Yuhan Sun, Ting Li, Binbin Weng, Yi Zou
Photonic topological insulators with boundary states present a robust solution to mitigate structure imperfections. By alteration of the virtual boundary between trivial and topological insulators, it is possible to bypass such defects. Coupled resonator optical waveguides (CROWs) have demonstrated their utility in realizing photonic topological insulators, as they exhibit distinct topological phases and band structures. With this characteristic, we designed and experimentally validated a CROW array capable of altering its topological phase by adjusting the coupling strength. This array functions partially as a topological insulator and partially as a topologically trivial array, guiding light along the virtuous boundary between these two regions. By altering the shape of the topological insulator, we can effectively control the optical path. This approach promises practical applications, such as optical switches, dynamic light steering, optical sensing, and optical computing.
{"title":"Coupling-Controlled Photonic Topological Ring Array","authors":"Chang Chang, Yuhan Sun, Ting Li, Binbin Weng, Yi Zou","doi":"10.1021/acsphotonics.4c01502","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01502","url":null,"abstract":"Photonic topological insulators with boundary states present a robust solution to mitigate structure imperfections. By alteration of the virtual boundary between trivial and topological insulators, it is possible to bypass such defects. Coupled resonator optical waveguides (CROWs) have demonstrated their utility in realizing photonic topological insulators, as they exhibit distinct topological phases and band structures. With this characteristic, we designed and experimentally validated a CROW array capable of altering its topological phase by adjusting the coupling strength. This array functions partially as a topological insulator and partially as a topologically trivial array, guiding light along the virtuous boundary between these two regions. By altering the shape of the topological insulator, we can effectively control the optical path. This approach promises practical applications, such as optical switches, dynamic light steering, optical sensing, and optical computing.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"19 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142684756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-21DOI: 10.1021/acsphotonics.4c01616
Rongjian Ma, Hang Ren, Chuxin Yan, Yuanzheng Li, Jixiu Li, Wei Xin, Weizhen Liu, Xin-Gang Zhao, Lin Yang, Shengnan Feng, Haiyang Xu, Yichun Liu, Xinfeng Liu
The development of high-performance, low-power solar-blind photodetectors (SBPDs) holds significant promise for both military and civilian applications. Compared with wide-bandgap semiconductors, two-dimensional (2D) materials exhibit advantageous characteristics in the threshold and efficiency of carrier multiplication (CM) due to enhanced Coulomb interaction and relaxed momentum conservation. This allows one incident high-energy photon to generate two or more electron–hole pairs effectively, positioning them as viable alternatives for the fabrication of high-performance self-powered SBPDs. Here, we have designed a vertically aligned 2D WS2/graphene photodetector with Au as the contact electrodes, forming a unilateral Schottky junction to facilitate the efficient transfer of high-energy electrons generated in the WS2 to the graphene without thermal relaxation. This enables efficient CM within graphene, resulting in an ultrahigh responsivity of 77 mA/W and an external quantum efficiency of 36% at 265 nm light with zero bias. This work offers invaluable insights into the development of next-generation SBPDs with high performance and low power consumption.
{"title":"Ultrahigh Photoresponsivity Enabled by Carrier Multiplication in a Self-Powered Solar-Blind Photodetector Based on the WS2/Graphene Heterostructure","authors":"Rongjian Ma, Hang Ren, Chuxin Yan, Yuanzheng Li, Jixiu Li, Wei Xin, Weizhen Liu, Xin-Gang Zhao, Lin Yang, Shengnan Feng, Haiyang Xu, Yichun Liu, Xinfeng Liu","doi":"10.1021/acsphotonics.4c01616","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01616","url":null,"abstract":"The development of high-performance, low-power solar-blind photodetectors (SBPDs) holds significant promise for both military and civilian applications. Compared with wide-bandgap semiconductors, two-dimensional (2D) materials exhibit advantageous characteristics in the threshold and efficiency of carrier multiplication (CM) due to enhanced Coulomb interaction and relaxed momentum conservation. This allows one incident high-energy photon to generate two or more electron–hole pairs effectively, positioning them as viable alternatives for the fabrication of high-performance self-powered SBPDs. Here, we have designed a vertically aligned 2D WS<sub>2</sub>/graphene photodetector with Au as the contact electrodes, forming a unilateral Schottky junction to facilitate the efficient transfer of high-energy electrons generated in the WS<sub>2</sub> to the graphene without thermal relaxation. This enables efficient CM within graphene, resulting in an ultrahigh responsivity of 77 mA/W and an external quantum efficiency of 36% at 265 nm light with zero bias. This work offers invaluable insights into the development of next-generation SBPDs with high performance and low power consumption.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"38 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-20DOI: 10.1021/acsphotonics.4c01852
Hui Chen, Zhenxu Bai, Junhong Chen, Xiaowei Li, Zhi-Han Zhu, Yulei Wang, Takashige Omatsu, Richard P. Mildren, Zhiwei Lu
For the first time, a cascaded diamond Raman vortex laser directly emitting within the cavity has been reported. Employing a two-mirror structured diamond Raman oscillator pumped by a 1064 nm Gaussian laser, first- and second-order Raman transitions yielded outputs at 1240 and 1485 nm, respectively. By incorporating the off-axis rotation of cavity mirrors, both wavelength bands produced spatially symmetrical distributions of Hermite–Gaussian (HG) and Laguerre–Gaussian (LG) vortex beams. The achieved maximum output powers for the first and second Stokes vortex lasers were 42 and 22 W, respectively, corresponding to conversion efficiencies of 15.3% and 5.8%. Benefiting from diamond’s exceptional thermal properties, no saturation or decline in the Raman vortex output power was observed within the experimental pump power range. The straightforward off-axis adjustment methodology introduced into a diamond Raman cavity with superior optical and thermal characteristics enables direct dual-wavelength vortex emission, validating diamond Raman oscillators as an effective means of expanding the wavelength of the vortex laser. This breakthrough holds significant implications for expanding the working wavelengths and output powers of vortex beams.
{"title":"Diamond Raman Vortex Lasers","authors":"Hui Chen, Zhenxu Bai, Junhong Chen, Xiaowei Li, Zhi-Han Zhu, Yulei Wang, Takashige Omatsu, Richard P. Mildren, Zhiwei Lu","doi":"10.1021/acsphotonics.4c01852","DOIUrl":"https://doi.org/10.1021/acsphotonics.4c01852","url":null,"abstract":"For the first time, a cascaded diamond Raman vortex laser directly emitting within the cavity has been reported. Employing a two-mirror structured diamond Raman oscillator pumped by a 1064 nm Gaussian laser, first- and second-order Raman transitions yielded outputs at 1240 and 1485 nm, respectively. By incorporating the off-axis rotation of cavity mirrors, both wavelength bands produced spatially symmetrical distributions of Hermite–Gaussian (HG) and Laguerre–Gaussian (LG) vortex beams. The achieved maximum output powers for the first and second Stokes vortex lasers were 42 and 22 W, respectively, corresponding to conversion efficiencies of 15.3% and 5.8%. Benefiting from diamond’s exceptional thermal properties, no saturation or decline in the Raman vortex output power was observed within the experimental pump power range. The straightforward off-axis adjustment methodology introduced into a diamond Raman cavity with superior optical and thermal characteristics enables direct dual-wavelength vortex emission, validating diamond Raman oscillators as an effective means of expanding the wavelength of the vortex laser. This breakthrough holds significant implications for expanding the working wavelengths and output powers of vortex beams.","PeriodicalId":23,"journal":{"name":"ACS Photonics","volume":"4 1","pages":""},"PeriodicalIF":7.0,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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