Simple formulae for the rate of electron leakage in injection lasers are derived, which take into account the surface recombination and an arbitrary number of heterojunctions. Applied to RW-lasers, where the surface beside the ridge is close to the active layer, a considerable enhancement of the leakage rate by the surface recombination is obtained. The influences of internal recombination, of drift fields, and of some device parameters on this effect are quantitatively investigated. Es werden einfache Formeln fur die Elektronenleckrate in Injektionslasern hergeleitet, welche die Oberflachenrekombination und beliebig viele Hetero-Ubergange berucksichtigen. Angewendet auf RW-Laser, bei denen die Oberflache seitlich des Stegs nahe an der aktiven Schicht liegt, ergibt sich ein spurbares Anheben der Leckrate durch die Oberflachenrekombination. Der Einflus der inneren Rekombination, von Driftfeldern und einiger Bauelementeparameter auf diesen Effekt wird quantitativ untersucht.
{"title":"Influence of Surface Recombination on the Rate of Electron Leakage in Ridge-Waveguide Injection Lasers","authors":"H. Wünsche, H. Wenzel","doi":"10.1002/PSSA.2211110141","DOIUrl":"https://doi.org/10.1002/PSSA.2211110141","url":null,"abstract":"Simple formulae for the rate of electron leakage in injection lasers are derived, which take into account the surface recombination and an arbitrary number of heterojunctions. Applied to RW-lasers, where the surface beside the ridge is close to the active layer, a considerable enhancement of the leakage rate by the surface recombination is obtained. The influences of internal recombination, of drift fields, and of some device parameters on this effect are quantitatively investigated. \u0000 \u0000 \u0000 \u0000Es werden einfache Formeln fur die Elektronenleckrate in Injektionslasern hergeleitet, welche die Oberflachenrekombination und beliebig viele Hetero-Ubergange berucksichtigen. Angewendet auf RW-Laser, bei denen die Oberflache seitlich des Stegs nahe an der aktiven Schicht liegt, ergibt sich ein spurbares Anheben der Leckrate durch die Oberflachenrekombination. Der Einflus der inneren Rekombination, von Driftfeldern und einiger Bauelementeparameter auf diesen Effekt wird quantitativ untersucht.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124136368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Pastrňák, J. Oswald, I. Gregora, V. Vorlíček, M. Babinský
The spatial distribution of luminescence intensity for edge emission and extrinsic Si related bands is studied for Si-doped LEC grown GaAs crystals. Free carrier distribution is determined from the halfwidth and peak position of intrinsic luminescence and from the position of coupled LO-phonon–plasmon modes in Raman spectra. An increase of the luminescence intensity with carrier concentration is observed up to n ≈ 1018 cm−3, the sharp decrease for higher concentrations is ascribed to Auger recombination. The temperature dependence of three Si-related luminescence bands at 1.35 eV (A), 1.2 eV (B), and 1.0 eV (C) is measured. The similarity of the temperature behaviour of the A band with EL2 centres supports its assignment to (Si–AsGa) donors. [Russian Text Ignored].
研究了掺硅LEC生长的GaAs晶体边缘发射和外源Si相关波段的发光强度的空间分布。自由载流子分布由本征发光的半宽度和峰位置以及lo -声子-等离子体耦合模式在拉曼光谱中的位置确定。在n≈1018 cm−3的载流子浓度下，发光强度随载流子浓度的增加而增加，较高载流子浓度下发光强度急剧下降归因于俄歇复合。测量了1.35 eV (A)、1.2 eV (B)和1.0 eV (C)下硅相关发光带的温度依赖性。A带的温度行为与EL2中心的相似性支持了它对(Si-AsGa)给体的分配。[忽略俄语文本]。
{"title":"Lateral Distribution of Si-Related Defects and Carrier Density in GaAs Crystals","authors":"J. Pastrňák, J. Oswald, I. Gregora, V. Vorlíček, M. Babinský","doi":"10.1002/PSSA.2211110137","DOIUrl":"https://doi.org/10.1002/PSSA.2211110137","url":null,"abstract":"The spatial distribution of luminescence intensity for edge emission and extrinsic Si related bands is studied for Si-doped LEC grown GaAs crystals. Free carrier distribution is determined from the halfwidth and peak position of intrinsic luminescence and from the position of coupled LO-phonon–plasmon modes in Raman spectra. An increase of the luminescence intensity with carrier concentration is observed up to n ≈ 1018 cm−3, the sharp decrease for higher concentrations is ascribed to Auger recombination. The temperature dependence of three Si-related luminescence bands at 1.35 eV (A), 1.2 eV (B), and 1.0 eV (C) is measured. The similarity of the temperature behaviour of the A band with EL2 centres supports its assignment to (Si–AsGa) donors. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":240242,"journal":{"name":"16 January","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115059876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The polarization reversal current response for parallel and antiparallel rubbed samples of a 3 μm thick sample of DOBAMBC are studied by applying triangular pulses of varying voltage. The antiparallel rubbed sample shows two peaks and parallel rubbed sample shows three peaks of polarization reversal. The third peak appears before the peak of bulk switching and the zero field point of the applied pulse. It is shown that the selective pretilt angles with the surface results in tilted or bent smectic layer to give the multipeak response of the polarization reversal current. Das Polarisationsumkehrstromverhalten fur parallel und antiparallel geschliffene Proben einer 3 μm dicken DOBAMBC-Probe werden mit dreieckformig anwachsenden Spannungsimpulsen untersucht. Die antiparallel geschliffene Probe zeigt zwei Maxima und die parallel geschliffene Probe zeigt drei Maxima von Polarisationsumkehr. Das dritte Maximum erscheint vor dem Maximum des Volumenverhaltens und dem Nullfeldpunkt des angelegten Impulses. Es wird gezeigt, das die ausgewahlten Vorneigungswinkel mit der Oberflache zu einer gekippten oder gebogenen smektischen Schicht fuhren, die den Mehrfachmaximumrespons des Polarisationsumkehrstroms liefert.
采用变电压三角形脉冲，研究了3 μm厚DOBAMBC平行和反平行摩擦试样的极化反转电流响应。反平行摩擦试样呈现两个极化反转峰，平行摩擦试样呈现三个极化反转峰。第三个峰出现在体积开关峰和外加脉冲的零场点之前。结果表明，与表面的选择性预倾斜角度可导致近晶层倾斜或弯曲，从而产生极化反转电流的多峰响应。本文研究了直径小于3 μm的平行和反平行geschlifen探针DOBAMBC-Probe的偏振特性。模具反平行geschliffene探针高度zwei和模具平行geschliffene探针高度drei Maxima von polarationsumkehr。Das dritte Maximum erscheint vor dem Maximum des Volumenverhaltens and dem Nullfeldpunkt des angelegten impulse。他的风的高度，他的风的高度，他的风的高度，他的风的高度，他的风的高度，他的风的高度，他的风的高度，他的风的高度，他的风的高度。
{"title":"Polarization Reversal Current Behaviour for Parallel and Antiparallel Rubbed Surface Stabilized Ferroelectric Liquid Crystals","authors":"S. S. Bawa, K. Saxena, S. Chandra","doi":"10.1002/PSSA.2211110133","DOIUrl":"https://doi.org/10.1002/PSSA.2211110133","url":null,"abstract":"The polarization reversal current response for parallel and antiparallel rubbed samples of a 3 μm thick sample of DOBAMBC are studied by applying triangular pulses of varying voltage. The antiparallel rubbed sample shows two peaks and parallel rubbed sample shows three peaks of polarization reversal. The third peak appears before the peak of bulk switching and the zero field point of the applied pulse. It is shown that the selective pretilt angles with the surface results in tilted or bent smectic layer to give the multipeak response of the polarization reversal current. \u0000 \u0000 \u0000 \u0000Das Polarisationsumkehrstromverhalten fur parallel und antiparallel geschliffene Proben einer 3 μm dicken DOBAMBC-Probe werden mit dreieckformig anwachsenden Spannungsimpulsen untersucht. Die antiparallel geschliffene Probe zeigt zwei Maxima und die parallel geschliffene Probe zeigt drei Maxima von Polarisationsumkehr. Das dritte Maximum erscheint vor dem Maximum des Volumenverhaltens und dem Nullfeldpunkt des angelegten Impulses. Es wird gezeigt, das die ausgewahlten Vorneigungswinkel mit der Oberflache zu einer gekippten oder gebogenen smektischen Schicht fuhren, die den Mehrfachmaximumrespons des Polarisationsumkehrstroms liefert.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128294797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A method to measure supersmall dilatation lattice distortions in the range Δd/d ≈ 10−10 to 10−8 by a bicrystal wedge-shaped gap X-ray interferometer is predicted. [Russian Text Ignored].
{"title":"Method of Determining Supersmall Dilatations in a Crystal Lattice","authors":"V. S. Haroutyunyan, P. H. Bezirganyan","doi":"10.1002/PSSA.2211110103","DOIUrl":"https://doi.org/10.1002/PSSA.2211110103","url":null,"abstract":"A method to measure supersmall dilatation lattice distortions in the range Δd/d ≈ 10−10 to 10−8 by a bicrystal wedge-shaped gap X-ray interferometer is predicted. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":240242,"journal":{"name":"16 January","volume":"37 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113993731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Note on the Crystal Structure of FeCoGe and FeNiGe","authors":"T. Kanomata, T. Goto","doi":"10.1002/PSSA.2211110143","DOIUrl":"https://doi.org/10.1002/PSSA.2211110143","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134467602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrical Properties of Zn3P2 at Room Temperature","authors":"K. Sieraňski, J. Szatkowski","doi":"10.1002/PSSA.2211110154","DOIUrl":"https://doi.org/10.1002/PSSA.2211110154","url":null,"abstract":"","PeriodicalId":240242,"journal":{"name":"16 January","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124631042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Des couches minces de MoSe2 deposees par pulverisation diode continue sont traitees par recuits, en presence de vapeur de selenium puis sous vide, de facon a obtenir des couches polycristallines stoechiometriques. La composition et la purete des couches sont contrǒlees par spectroscopie d'electrons. Leur homogeneite est etudiee a la microsonde electronique. La conductivite est mesuree entre 80 et 700 K. Les resultats experimentaux montrent que les couches sont homogenes et que la quantite d'oxygene presente dans les couches est tres faible. Les resultats des mesures electriques mettent en evidence l'existence de deux domaines de temperatures. A haute temperature (T ≫ 250 K) la conductivite est limitee par les joints de grains. Aux basses temperatures la variation de la conductivite avec la temperature verifie une loi en T−¼ ce qui correspond a une conduction par sauts a distance variable entre etats localises. MoSe2 thin films deposited by dc diode sputtering are annealed under selenium atmospheric pressure to obtain stoichiometric polycrystalline films. The composition, purity, and homogeneity of the films are checked by electron spectroscopy and electron microprobe analysis. The temperature dependence of the electrical conductivity is measured between 80 and 700 K. The experimental results show that the films are homogeneous and that the oxygen content in the layers is very low. The electrical data reveal the existence of two temperature regions. At high temperature (T > 250 K) the conductivity is limited by grain boundary scattering. At low temperatures the conductivity varies with temperature according to a T−¼ law corresponding to hopping conduction via localized states.
{"title":"Etude de la résistivité de couches minces polycristallines de MoSe2","authors":"J. C. Bernègde, A. Mallouky, J. Pouzet","doi":"10.1002/PSSA.2211110119","DOIUrl":"https://doi.org/10.1002/PSSA.2211110119","url":null,"abstract":"Des couches minces de MoSe2 deposees par pulverisation diode continue sont traitees par recuits, en presence de vapeur de selenium puis sous vide, de facon a obtenir des couches polycristallines stoechiometriques. La composition et la purete des couches sont contrǒlees par spectroscopie d'electrons. Leur homogeneite est etudiee a la microsonde electronique. La conductivite est mesuree entre 80 et 700 K. Les resultats experimentaux montrent que les couches sont homogenes et que la quantite d'oxygene presente dans les couches est tres faible. Les resultats des mesures electriques mettent en evidence l'existence de deux domaines de temperatures. A haute temperature (T ≫ 250 K) la conductivite est limitee par les joints de grains. Aux basses temperatures la variation de la conductivite avec la temperature verifie une loi en T−¼ ce qui correspond a une conduction par sauts a distance variable entre etats localises. \u0000 \u0000 \u0000 \u0000MoSe2 thin films deposited by dc diode sputtering are annealed under selenium atmospheric pressure to obtain stoichiometric polycrystalline films. The composition, purity, and homogeneity of the films are checked by electron spectroscopy and electron microprobe analysis. The temperature dependence of the electrical conductivity is measured between 80 and 700 K. The experimental results show that the films are homogeneous and that the oxygen content in the layers is very low. The electrical data reveal the existence of two temperature regions. At high temperature (T > 250 K) the conductivity is limited by grain boundary scattering. At low temperatures the conductivity varies with temperature according to a T−¼ law corresponding to hopping conduction via localized states.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126658283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The X-ray induced luminescence and its afterglow is investigated in natural and synthetic quartz crystals as well as in different types of glassy SiO2. In all types of SiO2 the luminescence intensity cannot be correlated directly with the impurity content of the investigated samples. A comparison of luminescence afterglow measurements of crystalline samples containing different impurities indicates that at low temperatures the luminescence is caused by forbidden intracenter transitions (constant afterglow below 150 K) of radiation induced defects (oxygen vacancy–peroxy linkage). Above 180 K the decrease of the afterglow decay time is explained by additional thermally activated ((370 ± 50) meV) radiationless (Frank-Codon) transitions, competing the luminous transitions. At high temperatures an impurity dependent luminescence occurs, detectable till 800 K, whose afterglow behavior is to be connected with the well known thermoluminescence. As in the case of silver or copper doped quartz, because of its afterglow behavior, the luminescence of quartz glasses is attributed to intracenter excitations at isolated not yet identified luminescence centers. Sowohl in naturlichen und synthetischen Quarzkristallen als auch in verschiedenen Quarzglastypen wird die Rontgenlumineszenz beschrieben. Die Intensitat der registrierten Lumineszenz kann in allen untersuchten SiO2-Typen nicht direkt mit dem Fremstoffgehalt korreliert werden. Ein Vergleich von Lumineszenz-Nachleuchtuntersuchungen bei kristallinen Proben mit unterschiedlichem Verunreinigungsgrad zeigt, das bei tiefen Temperaturen die Lumineszenz durch an sich verbotene innere Ubergange (konstimtes Nachleuchten unterhalb 150 K) strahlungsinduzierter Defekte (Sauerstoffleerstelle-Peroxydbindung) verursacht wird. Die Abnahme der oberhalb 180 K registrierten Abklingzeit des Nachleuchtens wird durch thermisch aktivierte ((370 ± 50) meV) strahlungslose Ubergange (Frank-Condon) erklart, die in Konkurrenz zu den lumineszierenden Ubergangen stehen. Bei hohen Temperaturen wird eine verunreinigungsabhangige Lumineszenz bis etwa 800 K beobachtbar, deren Nachleuchtverhalten mit der bekannten Thermolumineszenz zusammenhangt. Ebenso wie im Falle silber- oder kupferdotierter Quarze wird die Lumineszenz von Quarzglasern aufgrund ihres Nachleuchtverhaltens inneren Ubergangen, ansonsten isolierter Lumineszenzzentren, zugeschrieben, welche allerdings bis jetzt unidentifiziert sind.
研究了天然石英晶体和合成石英晶体以及不同类型的玻璃态SiO2的x射线致发光及其余辉。在所有类型的SiO2中，发光强度与所研究样品的杂质含量不能直接相关。对含不同杂质晶体样品的发光余辉测量结果的比较表明，在低温下，发光是由辐射诱导缺陷(氧空位-过氧键)的禁止中心内跃迁(低于150 K的恒定余辉)引起的。在180 K以上，余辉衰减时间的减少可以解释为额外的热激活((370±50)meV)无辐射(Frank-Codon)跃迁，与发光跃迁竞争。在高温下，杂质依赖性发光发生，直到800 K才可检测到，其余辉行为与众所周知的热释光有关。与掺银或铜的石英一样，由于其余辉行为，石英玻璃的发光归因于在孤立的尚未确定的发光中心的中心内激发。因此，在自然和合成石英晶体上，石英晶体也被称为“石英晶体”。模具强度的登记，发光，发光，发光，发光，发光，发光，发光，发光，发光，发光。in Vergleich von Lumineszenz- nachleuchtuntersuchungen bei kristallinen Proben mit unschiedlichem Verunreinigungsgrad ight, das bei tiefen Temperaturen die Lumineszenz durch and sich verbotene innere Ubergange (konstimtes Nachleuchten unterhalb 150 K) strahlungsindustrierter defkte (sauerstoffleerstelle - peroxybinding) verursacht wrd。Die Abnahme der oberhalb 180 K registerten Abklingzeit des Nachleuchtens and durch thermisch aktivierte((370±50)meV) strahlunglose Ubergange (Frank-Condon) erklart, Die in Konkurrenz zu den lumineszierenden Ubergangen stehen。北京温控风热释光技术有限公司(behohen temperature - wind - verunreinigungsabhangige Lumineszenz)为800k热释光技术有限公司(bekannten Thermolumineszenz zusammenhangt)。本文介绍了一种新型的石英晶体材料，即石英晶体材料，石英晶体材料，石英晶体材料，石英晶体材料。
{"title":"On the Nature of Afterglow of the X-Ray Induced Luminescence in Crystalline and Glassy SiO2","authors":"I. Godmanis, W. Hohenau","doi":"10.1002/PSSA.2211110136","DOIUrl":"https://doi.org/10.1002/PSSA.2211110136","url":null,"abstract":"The X-ray induced luminescence and its afterglow is investigated in natural and synthetic quartz crystals as well as in different types of glassy SiO2. In all types of SiO2 the luminescence intensity cannot be correlated directly with the impurity content of the investigated samples. A comparison of luminescence afterglow measurements of crystalline samples containing different impurities indicates that at low temperatures the luminescence is caused by forbidden intracenter transitions (constant afterglow below 150 K) of radiation induced defects (oxygen vacancy–peroxy linkage). Above 180 K the decrease of the afterglow decay time is explained by additional thermally activated ((370 ± 50) meV) radiationless (Frank-Codon) transitions, competing the luminous transitions. At high temperatures an impurity dependent luminescence occurs, detectable till 800 K, whose afterglow behavior is to be connected with the well known thermoluminescence. As in the case of silver or copper doped quartz, because of its afterglow behavior, the luminescence of quartz glasses is attributed to intracenter excitations at isolated not yet identified luminescence centers. \u0000 \u0000 \u0000 \u0000Sowohl in naturlichen und synthetischen Quarzkristallen als auch in verschiedenen Quarzglastypen wird die Rontgenlumineszenz beschrieben. Die Intensitat der registrierten Lumineszenz kann in allen untersuchten SiO2-Typen nicht direkt mit dem Fremstoffgehalt korreliert werden. Ein Vergleich von Lumineszenz-Nachleuchtuntersuchungen bei kristallinen Proben mit unterschiedlichem Verunreinigungsgrad zeigt, das bei tiefen Temperaturen die Lumineszenz durch an sich verbotene innere Ubergange (konstimtes Nachleuchten unterhalb 150 K) strahlungsinduzierter Defekte (Sauerstoffleerstelle-Peroxydbindung) verursacht wird. Die Abnahme der oberhalb 180 K registrierten Abklingzeit des Nachleuchtens wird durch thermisch aktivierte ((370 ± 50) meV) strahlungslose Ubergange (Frank-Condon) erklart, die in Konkurrenz zu den lumineszierenden Ubergangen stehen. Bei hohen Temperaturen wird eine verunreinigungsabhangige Lumineszenz bis etwa 800 K beobachtbar, deren Nachleuchtverhalten mit der bekannten Thermolumineszenz zusammenhangt. Ebenso wie im Falle silber- oder kupferdotierter Quarze wird die Lumineszenz von Quarzglasern aufgrund ihres Nachleuchtverhaltens inneren Ubergangen, ansonsten isolierter Lumineszenzzentren, zugeschrieben, welche allerdings bis jetzt unidentifiziert sind.","PeriodicalId":240242,"journal":{"name":"16 January","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126684897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The optical properties are studied in the region of the fundamental absorption edge of MnIn2Te4 single crystals (142m, defect stannite) oriented along (100) and (001). The width of the energy gap is measured to be Eg = 1.55, 1.425, and 1.41 eV, for the temperatures 77, 300, and 370 K, respectively. The α(ℏω) spectra are established to follow Urbach's rule throughout the temperature range studied, the steepness of the absorption edge remaining constant. Crystal annealing followed by fast cooling shifts the absorption edge longward by 50 meV, the exponential character of α(ℏω) persisting within the whole range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be governed by the sum of the effects of the density-of-states tails associated with a high concentration of lattice vacancies and of the electron-phonon interaction. The optical linear dichroism of the absorption edge of MnIn2Te4 crystals with defect stannite structure is discovered and studied. It is found that the crystals belonging to the tetragonal syngony, such as MnIn2Te4 (142m) and CuInSe2, CuInTe2 (142d), and exhibiting a weak tetragonal lattice deformation τ ≈ 0, reveal, in contrast to most chalcopyrites with τ > 0, a positive linear dichroism of transmittance close to Eg. Minimal direct transitions in MnIn2Te4 are allowed in the E ⊥ c polarization, the crystal splitting of the valence band at the Γ point being positive. [Russian Text Ignored].
{"title":"Fundamental Optical Absorption Edge in MnIn2Te4 Single Crystals","authors":"G. A. Medvedkin, Y. Rud', M. Tairov","doi":"10.1002/PSSA.2211110131","DOIUrl":"https://doi.org/10.1002/PSSA.2211110131","url":null,"abstract":"The optical properties are studied in the region of the fundamental absorption edge of MnIn2Te4 single crystals (142m, defect stannite) oriented along (100) and (001). The width of the energy gap is measured to be Eg = 1.55, 1.425, and 1.41 eV, for the temperatures 77, 300, and 370 K, respectively. The α(ℏω) spectra are established to follow Urbach's rule throughout the temperature range studied, the steepness of the absorption edge remaining constant. Crystal annealing followed by fast cooling shifts the absorption edge longward by 50 meV, the exponential character of α(ℏω) persisting within the whole range T = 77 to 370 K. An analysis shows the optical absorption in the region of the fundamental edge to be governed by the sum of the effects of the density-of-states tails associated with a high concentration of lattice vacancies and of the electron-phonon interaction. The optical linear dichroism of the absorption edge of MnIn2Te4 crystals with defect stannite structure is discovered and studied. It is found that the crystals belonging to the tetragonal syngony, such as MnIn2Te4 (142m) and CuInSe2, CuInTe2 (142d), and exhibiting a weak tetragonal lattice deformation τ ≈ 0, reveal, in contrast to most chalcopyrites with τ > 0, a positive linear dichroism of transmittance close to Eg. Minimal direct transitions in MnIn2Te4 are allowed in the E ⊥ c polarization, the crystal splitting of the valence band at the Γ point being positive. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":240242,"journal":{"name":"16 January","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126884845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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