Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.653929
B. Kuhlmann, A. Aberle, R. Hezel, G. Heiser
The Al/SiO/sub x//p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. We experimentally determined the recombination properties (saturation current density J/sub 0/ and ideality factor n) of the MIS contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined.
{"title":"Characterization and optimization of the Al/SiO/sub x//p-Si MIS contact in MIS-IL silicon solar cells","authors":"B. Kuhlmann, A. Aberle, R. Hezel, G. Heiser","doi":"10.1109/PVSC.1997.653929","DOIUrl":"https://doi.org/10.1109/PVSC.1997.653929","url":null,"abstract":"The Al/SiO/sub x//p-Si MIS tunnel contact is an essential part of metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells. We experimentally determined the recombination properties (saturation current density J/sub 0/ and ideality factor n) of the MIS contact in MIS-IL silicon solar cells fabricated at ISFH. Based on these measurements, it has been possible to resolve the contribution of the MIS contact to the total recombination losses in 1-sun illuminated MIS-IL solar cells by means of 2D numerical modeling. Furthermore, a 2D numerical optimization study is performed where the optimum width of the MIS contact fingers of advanced MIS-IL silicon solar cells is determined.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129882795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654174
A. Middya, S. Hazra, S. Ray, C. Longeaud, J. Kleider
a-Si:H and its alloy developed under a 'new regime' (/spl alpha/-/spl gamma/' transition zone) of discharge of RFPECVD and using strong helium dilution show lots of new characteristics. The value of /spl mu//spl tau/ of the resulting films is enhanced by a factor of 10 to 100 (independent of Fermi level position) and concomitantly the DOS above Fermi level of a-Si:H and a-SiGe:H ([Ge]/spl les/0.20) is much lower than that of standard samples. The carrier mobility measured by time resolved microwave conductivity (TRMC) is increased by a factor of 2 to 3. HRTEM micrograph shows the region of ordered structure (nanocrystal) embedded in an amorphous matrix. The reproducibility of this type of materials in different reactors has been confirmed. Thus, inclusion of ordered network structure in the amorphous matrix could be the new way to improve electronic properties of a-Si:H and its alloys.
{"title":"New regime of RF PECVD for the growth of a-Si:H and its alloys with improved electronic properties","authors":"A. Middya, S. Hazra, S. Ray, C. Longeaud, J. Kleider","doi":"10.1109/PVSC.1997.654174","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654174","url":null,"abstract":"a-Si:H and its alloy developed under a 'new regime' (/spl alpha/-/spl gamma/' transition zone) of discharge of RFPECVD and using strong helium dilution show lots of new characteristics. The value of /spl mu//spl tau/ of the resulting films is enhanced by a factor of 10 to 100 (independent of Fermi level position) and concomitantly the DOS above Fermi level of a-Si:H and a-SiGe:H ([Ge]/spl les/0.20) is much lower than that of standard samples. The carrier mobility measured by time resolved microwave conductivity (TRMC) is increased by a factor of 2 to 3. HRTEM micrograph shows the region of ordered structure (nanocrystal) embedded in an amorphous matrix. The reproducibility of this type of materials in different reactors has been confirmed. Thus, inclusion of ordered network structure in the amorphous matrix could be the new way to improve electronic properties of a-Si:H and its alloys.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128701729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654117
T. Gessert, P. Sheldon, Xiaonan Li, D. Dunlavy, D. Niles, R. Sasala, S. Albright, B. Zadler
Ongoing research topics in CdS/CdTe photovoltaic (PV) device technology include development of a back contact demonstrating low resistance and stability, while using processes consistent with large-area manufacturing. In efforts toward this goal, the authors have a sequence of dry, high-temperature processes to provide this contact. The process eliminates the need for chemical etching, and is performed at /spl sim/300/spl deg/C to aid in contact stability and adhesion. Applying this contact process to NREL-grown CdS/CdTe device material has resulted in efficiencies >12%. Devices with efficiencies /spl sim/10% have also been produced using material supplied by Solar Cells, Inc., and by Golden Photon, Inc.
{"title":"Studies of ZnTe back contacts to CdS/CdTe solar cells","authors":"T. Gessert, P. Sheldon, Xiaonan Li, D. Dunlavy, D. Niles, R. Sasala, S. Albright, B. Zadler","doi":"10.1109/PVSC.1997.654117","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654117","url":null,"abstract":"Ongoing research topics in CdS/CdTe photovoltaic (PV) device technology include development of a back contact demonstrating low resistance and stability, while using processes consistent with large-area manufacturing. In efforts toward this goal, the authors have a sequence of dry, high-temperature processes to provide this contact. The process eliminates the need for chemical etching, and is performed at /spl sim/300/spl deg/C to aid in contact stability and adhesion. Applying this contact process to NREL-grown CdS/CdTe device material has resulted in efficiencies >12%. Devices with efficiencies /spl sim/10% have also been produced using material supplied by Solar Cells, Inc., and by Golden Photon, Inc.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124621299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654084
A. Metz, R. Hezel
High-efficiency solar cells obtained by a simple cost-effective manufacturing process are required for a drastic reduction of the costs of solar electricity. In this paper, an improved and yet simple processing sequence for highly efficient MIS-contacted diffused n/sup +/p junction (MIS-n/sup +/p) silicon solar cells is presented. The process is characterised by: (i) formation of a metal-insulator-semiconductor (MIS) contact on an n/sup +/-diffused emitter; (ii) aluminium metallisation for front and rear electrodes; and (iii) low-temperature surface passivation by PECVD silicon nitride. For MIS-n/sup +/p solar cells with the front grid defined by Al evaporation through a shadow mask, efficiencies of up to 20.6% have been obtained. Furthermore, mask-free metallised cells with a mechanically grooved front surface have been fabricated. These cells have reached a confirmed efficiency of 21.1%, the highest value to date reported for MIS-n/sup +/p silicon solar cells.
{"title":"Record efficiencies above 21% for MIS-contacted diffused junction silicon solar cells","authors":"A. Metz, R. Hezel","doi":"10.1109/PVSC.1997.654084","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654084","url":null,"abstract":"High-efficiency solar cells obtained by a simple cost-effective manufacturing process are required for a drastic reduction of the costs of solar electricity. In this paper, an improved and yet simple processing sequence for highly efficient MIS-contacted diffused n/sup +/p junction (MIS-n/sup +/p) silicon solar cells is presented. The process is characterised by: (i) formation of a metal-insulator-semiconductor (MIS) contact on an n/sup +/-diffused emitter; (ii) aluminium metallisation for front and rear electrodes; and (iii) low-temperature surface passivation by PECVD silicon nitride. For MIS-n/sup +/p solar cells with the front grid defined by Al evaporation through a shadow mask, efficiencies of up to 20.6% have been obtained. Furthermore, mask-free metallised cells with a mechanically grooved front surface have been fabricated. These cells have reached a confirmed efficiency of 21.1%, the highest value to date reported for MIS-n/sup +/p silicon solar cells.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124677017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654111
S. Kwon, Sung Chan Park, B. Ahn, K. Yoon, Jinsoo Song
The growth of CuIn/sub 3/Se/sub 5/ layer on CuInSe/sub 2/ films has been studied for the fabrication of CuInSe/sub 2/ solar cell, using the three-stage process. After growing the CuInSe/sub 2/ film, the film surface was quickly converted to a possible ordered vacancy compound (CuIn/sub 3/Se/sub 5/). AES depth analysis indicated the presence of a CuIn/sub 3/Se/sub 5/ layer on the CuInSe/sub 2/ surface. The energy bandgap shifted from 1.04 to 1.24 eV by the formation of CuIn/sub 3/Se/sub 5/ phase on CuInSe/sub 2/ surface. Because the lattice parameters of CuIn/sub 3/Se/sub 5/ are smaller, the XRD peaks were shifted to higher 2/spl theta/ values. In/sub 2/Se/sub 3//CuInSe/sub 2/ cells with a thin CuIn/sub 3/Se/sub 5/ layer at the interface yielded solar efficiency of 8.46% with an active area of 0.2 cm/sup 2/. The device fabricated from the films with a thick CuIn/sub 3/Se/sub 5/ layer on CuInSe/sub 2/ film displayed a double diode effect which was possibly caused the increase of junction interface.
{"title":"Growth of CuIn/sub 3/Se/sub 5/ layer on the CuInSe/sub 2/ film and its effect on the photovoltaic properties of In/sub 2/Se/sub 3//CuInSe/sub 2/ solar cells","authors":"S. Kwon, Sung Chan Park, B. Ahn, K. Yoon, Jinsoo Song","doi":"10.1109/PVSC.1997.654111","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654111","url":null,"abstract":"The growth of CuIn/sub 3/Se/sub 5/ layer on CuInSe/sub 2/ films has been studied for the fabrication of CuInSe/sub 2/ solar cell, using the three-stage process. After growing the CuInSe/sub 2/ film, the film surface was quickly converted to a possible ordered vacancy compound (CuIn/sub 3/Se/sub 5/). AES depth analysis indicated the presence of a CuIn/sub 3/Se/sub 5/ layer on the CuInSe/sub 2/ surface. The energy bandgap shifted from 1.04 to 1.24 eV by the formation of CuIn/sub 3/Se/sub 5/ phase on CuInSe/sub 2/ surface. Because the lattice parameters of CuIn/sub 3/Se/sub 5/ are smaller, the XRD peaks were shifted to higher 2/spl theta/ values. In/sub 2/Se/sub 3//CuInSe/sub 2/ cells with a thin CuIn/sub 3/Se/sub 5/ layer at the interface yielded solar efficiency of 8.46% with an active area of 0.2 cm/sup 2/. The device fabricated from the films with a thick CuIn/sub 3/Se/sub 5/ layer on CuInSe/sub 2/ film displayed a double diode effect which was possibly caused the increase of junction interface.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124715054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654201
D. Aiken, A. Barnett
Two major opportunities for increasing the performance of present day silicon solar cells involve reducing both the thickness and the grid shading. The ideal silicon photovoltaic device will be 20-100 /spl mu/m thick, will incorporate light trapping, and will not be shaded by contact metallization. Practicality also requires that these devices be supported by a low cost substrate. For the first time, a thin, substrate-based crystalline silicon solar cell has been designed and fabricated with no grid shading. Contacts are sandwiched between a supportive silicon substrate and a 40 /spl mu/m thick active silicon device layer. Device results include a 535 mV V/sub oc/, and negligible shunt conductance and series resistance.
{"title":"Thin, substrate-based crystalline silicon solar cells with no grid shading","authors":"D. Aiken, A. Barnett","doi":"10.1109/PVSC.1997.654201","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654201","url":null,"abstract":"Two major opportunities for increasing the performance of present day silicon solar cells involve reducing both the thickness and the grid shading. The ideal silicon photovoltaic device will be 20-100 /spl mu/m thick, will incorporate light trapping, and will not be shaded by contact metallization. Practicality also requires that these devices be supported by a low cost substrate. For the first time, a thin, substrate-based crystalline silicon solar cell has been designed and fabricated with no grid shading. Contacts are sandwiched between a supportive silicon substrate and a 40 /spl mu/m thick active silicon device layer. Device results include a 535 mV V/sub oc/, and negligible shunt conductance and series resistance.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129195204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654139
S. K. Deb, S. Ferrere, A. J. Frank, B. Gregg, S. Huang, A. Nozik, G. Schlichthorl, A. Zaban
A new type of photovoltaic cell is described. It is a photoelectrochemical device that is based on the dye-sensitization of thin (10-20 /spl mu/m) nanocrystalline films of TiO/sub 2/ nanoparticles in contact with a nonaqueous liquid electrolyte. The cell is very simple to fabricate and, in principle, its color can be tuned through the visible spectrum, ranging from being completely transparent to black opaque by changing the absorption characteristics of the dye. The highest present efficiency of the dye-sensitized photochemical solar cell is about 11%. The cell has the potential to be a low-cost photovoltaic option. Unique applications include photovoltaic power windows and photoelectrochromic windows.
{"title":"Photochemical solar cells based on dye-sensitization of nanocrystalline TiO/sub 2/","authors":"S. K. Deb, S. Ferrere, A. J. Frank, B. Gregg, S. Huang, A. Nozik, G. Schlichthorl, A. Zaban","doi":"10.1109/PVSC.1997.654139","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654139","url":null,"abstract":"A new type of photovoltaic cell is described. It is a photoelectrochemical device that is based on the dye-sensitization of thin (10-20 /spl mu/m) nanocrystalline films of TiO/sub 2/ nanoparticles in contact with a nonaqueous liquid electrolyte. The cell is very simple to fabricate and, in principle, its color can be tuned through the visible spectrum, ranging from being completely transparent to black opaque by changing the absorption characteristics of the dye. The highest present efficiency of the dye-sensitized photochemical solar cell is about 11%. The cell has the potential to be a low-cost photovoltaic option. Unique applications include photovoltaic power windows and photoelectrochromic windows.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"11 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120899028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654164
Y. Hishikawa, T. Kinoshita, M. Shima, M. Tanaka, S. Kiyama, S. Tsuda, S. Nakano
The world's highest stabilized conversion efficiency of 9.5% has been achieved for a 30/spl times/40 cm/sup 2/ a-Si/a-SiGe glass superstrate solar cell submodule. However, significant optical loss still exists even in these high-efficiency a-Si solar cells. FEM numerical simulation has shown that the primary origin of the optical loss in textured a-Si solar cells at about /spl ges/800 nm is absorption in SnO/sub 2/ which is enhanced by the optical confinement effect. Optical confinement also results in increased absorption in the metal electrode, which is another source of optical loss.
{"title":"Optical confinement and optical loss in high-efficiency a-Si solar cells","authors":"Y. Hishikawa, T. Kinoshita, M. Shima, M. Tanaka, S. Kiyama, S. Tsuda, S. Nakano","doi":"10.1109/PVSC.1997.654164","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654164","url":null,"abstract":"The world's highest stabilized conversion efficiency of 9.5% has been achieved for a 30/spl times/40 cm/sup 2/ a-Si/a-SiGe glass superstrate solar cell submodule. However, significant optical loss still exists even in these high-efficiency a-Si solar cells. FEM numerical simulation has shown that the primary origin of the optical loss in textured a-Si solar cells at about /spl ges/800 nm is absorption in SnO/sub 2/ which is enhanced by the optical confinement effect. Optical confinement also results in increased absorption in the metal electrode, which is another source of optical loss.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"44 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121183501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654198
M. Boreland
The copper vapour laser (CVL) provides a pathway to relax some of the sample restrictions encountered by excimer lasers, and allow reapplication of the techniques developed for excimer lasers. Using a CVL focused spot, combined with low temperature substrate heating (/spl les/300/spl deg/C) to control the solidification velocity, grain sizes up to 0.445 /spl mu/m have been achieved, with an area weighted average up to 0.243 /spl mu/m. These grain sizes, which are comparable to reports using excimer lasers on much thinner films, were achieved on 1 /spl mu/m thick PECVD a-Si on quartz substrates making them potentially of interest for photovoltaic devices. Crystallinity was characterised using FESEM and Raman measurements.
{"title":"Laser crystallisation of a-Si using copper vapour lasers: a different option for photovoltaic applications","authors":"M. Boreland","doi":"10.1109/PVSC.1997.654198","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654198","url":null,"abstract":"The copper vapour laser (CVL) provides a pathway to relax some of the sample restrictions encountered by excimer lasers, and allow reapplication of the techniques developed for excimer lasers. Using a CVL focused spot, combined with low temperature substrate heating (/spl les/300/spl deg/C) to control the solidification velocity, grain sizes up to 0.445 /spl mu/m have been achieved, with an area weighted average up to 0.243 /spl mu/m. These grain sizes, which are comparable to reports using excimer lasers on much thinner films, were achieved on 1 /spl mu/m thick PECVD a-Si on quartz substrates making them potentially of interest for photovoltaic devices. Crystallinity was characterised using FESEM and Raman measurements.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"2017 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121781261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654143
H. Uda, T. Fujii, S. Ikegami, H. Sonomura
Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350/spl deg/C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350/spl deg/C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300/spl deg/C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.
{"title":"Polycrystalline CdS thin film prepared by metalorganic chemical vapor deposition","authors":"H. Uda, T. Fujii, S. Ikegami, H. Sonomura","doi":"10.1109/PVSC.1997.654143","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654143","url":null,"abstract":"Polycrystalline CdS thin film has been deposited on borosilicate glass substrate by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperature within the range of 280-350/spl deg/C. The deposition rate increased with increasing VI/II molar ratio and showed the maximum value at the VI/II molar ratio of 4 for the substrate temperature of 300-350/spl deg/C. Thin CdS film with lower resistivity and high optical transmittance was prepared at 300/spl deg/C with over 1 to 4 range of VI/II molar ratio. The CdS film that deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114777956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：