Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654077
S. Okamoto, M. Nishida, T. Shindo, Y. Komatsu, S. Yasue, M. Kaneiwa, T. Nanmori
To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p/sup +/) hydrogenated microcrystalline silicon (/spl mu/c-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO/sub 2/ film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25/spl deg/C, 100 mW/cm/sup 2/) was obtained for a single crystalline silicon solar cell in 5/spl times/5 cm/sup 2/ area.
{"title":"23.5% efficient silicon solar cell with rear micro contacts of c-Si//spl mu/c-Si:H heterostructure","authors":"S. Okamoto, M. Nishida, T. Shindo, Y. Komatsu, S. Yasue, M. Kaneiwa, T. Nanmori","doi":"10.1109/PVSC.1997.654077","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654077","url":null,"abstract":"To obtain high efficiency silicon solar cells, we have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p/sup +/) hydrogenated microcrystalline silicon (/spl mu/c-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO/sub 2/ film was opened on the rear surface of the substrate. Voc was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25/spl deg/C, 100 mW/cm/sup 2/) was obtained for a single crystalline silicon solar cell in 5/spl times/5 cm/sup 2/ area.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131967728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654243
J. Bourgoin
The authors describe the variation of the spectral response of LILT, Si solar cells especially designed for deep space missions irradiated with 10/sup 16/ cm/sup -2/, 1 MeV, electrons versus the temperature of irradiation in the range 80-300 K. Since the spectral response SR(/spl lambda/) is temperature dependent, the degradation is given in terms of the quantity 1-SR(/spl lambda/)/SR/sub 0/(/spl lambda/) where SR/sub 0/ is the spectral response of the unirradiated cell. These data are correlated with the changes induced by the irradiation in the short circuit current. Information on the main recombination centers introduced by the irradiation at various temperatures can then be extracted.
{"title":"Effect of the irradiation temperature on the spectral response of Si solar cells","authors":"J. Bourgoin","doi":"10.1109/PVSC.1997.654243","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654243","url":null,"abstract":"The authors describe the variation of the spectral response of LILT, Si solar cells especially designed for deep space missions irradiated with 10/sup 16/ cm/sup -2/, 1 MeV, electrons versus the temperature of irradiation in the range 80-300 K. Since the spectral response SR(/spl lambda/) is temperature dependent, the degradation is given in terms of the quantity 1-SR(/spl lambda/)/SR/sub 0/(/spl lambda/) where SR/sub 0/ is the spectral response of the unirradiated cell. These data are correlated with the changes induced by the irradiation in the short circuit current. Information on the main recombination centers introduced by the irradiation at various temperatures can then be extracted.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130230029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654068
A. Burgers, J. Eikelboom
Normally solar cells are optimized for maximum efficiency at standard test conditions. It is recognized ever more widely that cells and modules should be optimized for maximum yield at their operating conditions. The metalization pattern is one aspect of this optimization. An optimized pattern can be implemented at no cost in, for instance, the case of screen-printed solar cells, as it merely requires changing the screen printing mask. The authors demonstrate that most H-grid metalization programs can be used without any modification for optimization for yearly yield. They then use this method to optimize for both yearly yield for irradiation conditions as they occur in the Netherlands and standard test conditions. It turns out that we arrive for yearly optimization at fewer busbars and a much lower number of fingers. The total yield is improved by 1%.
{"title":"Optimizing metalization patterns for yearly yield [solar cell fabrication]","authors":"A. Burgers, J. Eikelboom","doi":"10.1109/PVSC.1997.654068","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654068","url":null,"abstract":"Normally solar cells are optimized for maximum efficiency at standard test conditions. It is recognized ever more widely that cells and modules should be optimized for maximum yield at their operating conditions. The metalization pattern is one aspect of this optimization. An optimized pattern can be implemented at no cost in, for instance, the case of screen-printed solar cells, as it merely requires changing the screen printing mask. The authors demonstrate that most H-grid metalization programs can be used without any modification for optimization for yearly yield. They then use this method to optimize for both yearly yield for irradiation conditions as they occur in the Netherlands and standard test conditions. It turns out that we arrive for yearly optimization at fewer busbars and a much lower number of fingers. The total yield is improved by 1%.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127913206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654169
R. Brendel, R. Bergmann, B. Fischer, J. Krinke, R. Plieninger, U. Rau, J. Reiss, H. Strunk, H. Wanka, J.H. Wernel
The authors fabricate polycrystalline silicon solar cells on glass by Si deposition on solid phase crystallized seed layers and derive an effective diffusion length L/sub eff,QE/=3 /spl mu/m from quantum efficiency measurements. Three-dimensional transport modeling reveals that L/sub eff,QE/ differs from the diffusion length L/sub eff,IV/ in the diode saturation current j/sub o/=(q n/sub i//sup 2/D)/(N/sub A/ L/sub eff,IV/). Here q, n/sub i/, D, and N/sub A/ denote the elementary charge, intrinsic carrier concentration, diffusion constant and doping concentration, respectively. However, the difference is small for their polycrystalline Si solar cells. Dominant recombination in the space charge region limits the open circuit voltage to 340 mV.
{"title":"Transport analysis for polycrystalline silicon solar cells on glass substrates","authors":"R. Brendel, R. Bergmann, B. Fischer, J. Krinke, R. Plieninger, U. Rau, J. Reiss, H. Strunk, H. Wanka, J.H. Wernel","doi":"10.1109/PVSC.1997.654169","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654169","url":null,"abstract":"The authors fabricate polycrystalline silicon solar cells on glass by Si deposition on solid phase crystallized seed layers and derive an effective diffusion length L/sub eff,QE/=3 /spl mu/m from quantum efficiency measurements. Three-dimensional transport modeling reveals that L/sub eff,QE/ differs from the diffusion length L/sub eff,IV/ in the diode saturation current j/sub o/=(q n/sub i//sup 2/D)/(N/sub A/ L/sub eff,IV/). Here q, n/sub i/, D, and N/sub A/ denote the elementary charge, intrinsic carrier concentration, diffusion constant and doping concentration, respectively. However, the difference is small for their polycrystalline Si solar cells. Dominant recombination in the space charge region limits the open circuit voltage to 340 mV.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129280365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654173
L. Lo, M. Hatta, N. Andoh, H. Nagayoshi, K. Kamisako
Undoped, phosphorus-, and boron-doped microcrystalline silicon (/spl mu/c-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of /spl mu/c-Si:H films were investigated. Doped /spl mu/c-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9.
{"title":"Preparation of high-quality /spl mu/c-Si:H films by a hydrogen-radical CVD method [solar cells]","authors":"L. Lo, M. Hatta, N. Andoh, H. Nagayoshi, K. Kamisako","doi":"10.1109/PVSC.1997.654173","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654173","url":null,"abstract":"Undoped, phosphorus-, and boron-doped microcrystalline silicon (/spl mu/c-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of /spl mu/c-Si:H films were investigated. Doped /spl mu/c-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125359853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654306
Carl R. Osterwald, S. Anevsky, K. Bucher, A. Barua, P. Chaudhuri, J. Dubard, K. Emery, B. Hansen, D. King, J. Metzdorf, F. Nagamine, R. Shimokawa, Y. Wang, T. Wittchen, W. Zaaiman, A. Zastrow, J. Zhang
This paper presents an overview of the World Photovoltaic Scale (WPVS) international reference cell calibration program. The WPVS provides a scale for PV performance measurements that has been established through round-robin calibration of a group of primary reference cells and is traceable to Systeme International (SI) units. Procedures for recalibration of the reference cell group have been devised, along with procedures for admittance and calibration of new reference cells. A reference cell package has been designed that meets the unique needs of the WPVS. It is hoped that the existing WPVS group will eventually be replaced with cells of the new design that have passed an acceptance test procedure.
{"title":"The World Photovoltaic Scale: an international reference cell calibration program","authors":"Carl R. Osterwald, S. Anevsky, K. Bucher, A. Barua, P. Chaudhuri, J. Dubard, K. Emery, B. Hansen, D. King, J. Metzdorf, F. Nagamine, R. Shimokawa, Y. Wang, T. Wittchen, W. Zaaiman, A. Zastrow, J. Zhang","doi":"10.1109/PVSC.1997.654306","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654306","url":null,"abstract":"This paper presents an overview of the World Photovoltaic Scale (WPVS) international reference cell calibration program. The WPVS provides a scale for PV performance measurements that has been established through round-robin calibration of a group of primary reference cells and is traceable to Systeme International (SI) units. Procedures for recalibration of the reference cell group have been devised, along with procedures for admittance and calibration of new reference cells. A reference cell package has been designed that meets the unique needs of the WPVS. It is hoped that the existing WPVS group will eventually be replaced with cells of the new design that have passed an acceptance test procedure.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123148214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.653935
T.F. Clszek, T. Wang
Thin silicon filaments were grown from the melt by three different methods: (a) RF-heated float-zone pedestal growth of high-purity, dislocation-free, single-crystal filaments, (b) growth of <112> axis, (111) face, dendrite filaments at high pulling rates from a supercooled melt in a quartz crucible, and (c) capillary die growth of thin-walled, small-diameter Si tube-filaments with high ratio of surface area to volume and concomitant device structure advantages. Minority-carrier lifetime /spl tau/ was used to assess the filaments. For the three growth methods listed above, values as high as 660 /spl mu/sec, 53 /spl mu/sec, and 42 /spl mu/sec were observed, respectively. Thin silicon filaments with good crystallographic perfection, grown at high speeds, may be useful as active semiconductor elements in multiple linear-concentrator-array PV systems and in other optoelectronic applications.
{"title":"Growth and properties of silicon filaments for photovoltaic applications","authors":"T.F. Clszek, T. Wang","doi":"10.1109/PVSC.1997.653935","DOIUrl":"https://doi.org/10.1109/PVSC.1997.653935","url":null,"abstract":"Thin silicon filaments were grown from the melt by three different methods: (a) RF-heated float-zone pedestal growth of high-purity, dislocation-free, single-crystal filaments, (b) growth of <112> axis, (111) face, dendrite filaments at high pulling rates from a supercooled melt in a quartz crucible, and (c) capillary die growth of thin-walled, small-diameter Si tube-filaments with high ratio of surface area to volume and concomitant device structure advantages. Minority-carrier lifetime /spl tau/ was used to assess the filaments. For the three growth methods listed above, values as high as 660 /spl mu/sec, 53 /spl mu/sec, and 42 /spl mu/sec were observed, respectively. Thin silicon filaments with good crystallographic perfection, grown at high speeds, may be useful as active semiconductor elements in multiple linear-concentrator-array PV systems and in other optoelectronic applications.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123235027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654112
J. Webb, D. Rose, D. Niles, A. Swartzlander, M. Al‐Jassim
Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Films of CdS grown using chemical bath deposition (CBD) generally yield better devices than purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this work, we present Fourier transform infrared (FTIR), Auger, electron microprobe (EPMA), X-ray photoelectron spectroscopic (XPS), and secondary ion mass spectroscopic (SIMS) analyses of the impurities in CBD CdS films, and show that these differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10/sup 2/ micron-scale precipitates.
{"title":"FTIR, EPMA, Auger, and XPS analysis of impurity precipitates in CdS films","authors":"J. Webb, D. Rose, D. Niles, A. Swartzlander, M. Al‐Jassim","doi":"10.1109/PVSC.1997.654112","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654112","url":null,"abstract":"Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Films of CdS grown using chemical bath deposition (CBD) generally yield better devices than purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this work, we present Fourier transform infrared (FTIR), Auger, electron microprobe (EPMA), X-ray photoelectron spectroscopic (XPS), and secondary ion mass spectroscopic (SIMS) analyses of the impurities in CBD CdS films, and show that these differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10/sup 2/ micron-scale precipitates.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115981672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Polycrystalline silicon (poly-Si) films (10-20 /spl mu/m) were grown from SiH/sub 2/Cl/sub 2/ or SiCl/sub 4/ by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (T/sub s/) of above 1030/spl deg/C. The average grain size and carrier mobility of the films were found to be dependent on T/sub s/ and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl deg/C).
{"title":"Poly-silicon thin films and solar cells prepared by rapid thermal CVD","authors":"Yuwen Zhao, X. Jiang, Wenjing Wang, Zhongming Li, Yuan Yu, Xianbo Liao","doi":"10.1109/PVSC.1997.654193","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654193","url":null,"abstract":"Polycrystalline silicon (poly-Si) films (10-20 /spl mu/m) were grown from SiH/sub 2/Cl/sub 2/ or SiCl/sub 4/ by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (T/sub s/) of above 1030/spl deg/C. The average grain size and carrier mobility of the films were found to be dependent on T/sub s/ and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl deg/C).","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125181426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-29DOI: 10.1109/PVSC.1997.654257
V. Andreev, O.I. Chosta, V. Khvostikov, E.V. Paleeva, M. Shvarts
3.75 MeV electron irradiation of LPE-grown AlGaAs/GaAs monolithic two-terminal tandem solar cells was studied. In addition, Al/sub 0.35/Ga/sub 0.65/As and GaAs single-junction cells with various junction depths prepared to simulate the top and bottom cells of the tandems were irradiated. The cell degradation was characterized by spectral response and by illuminated current-voltage measurements. The degradation of minority-carrier diffusion length were measured on the AlGaAs and GaAs structures for optimization of the tandem solar cells.
{"title":"3.75 MeV electron irradiation of III-V concentrator tandem cells","authors":"V. Andreev, O.I. Chosta, V. Khvostikov, E.V. Paleeva, M. Shvarts","doi":"10.1109/PVSC.1997.654257","DOIUrl":"https://doi.org/10.1109/PVSC.1997.654257","url":null,"abstract":"3.75 MeV electron irradiation of LPE-grown AlGaAs/GaAs monolithic two-terminal tandem solar cells was studied. In addition, Al/sub 0.35/Ga/sub 0.65/As and GaAs single-junction cells with various junction depths prepared to simulate the top and bottom cells of the tandems were irradiated. The cell degradation was characterized by spectral response and by illuminated current-voltage measurements. The degradation of minority-carrier diffusion length were measured on the AlGaAs and GaAs structures for optimization of the tandem solar cells.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114278989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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