Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155835
J. Domaradzki, K. Baniewicz, M. Mazur, M. Pasierbek, T. Berlicki
Gasochromic thin films are used in the fields of gas sensing, smart windows and display industries. In this paper wettability and long-term stability of gasochromic effect of TiO2:(W, Cr, Mo) thin films have been investigated. Samples were deposited using high energy reactive magnetron sputtering process on Corning 7059 glass substrates. Contact angle, critical surface tension and surface free energy were determined using Theta Lite tensiometer. Thin films revealed hydrophilic properties. Gasochromic effect was observed in ethanol vapor atmosphere in temperature of at least 200 °C. Bleaching of the thin films was obtained in an ambient atmosphere at 350 °C. Also, the coloration of the samples was entirely reversible.
{"title":"Long-term stability of gasochromic effect in TiO2:(W, Cr, Mo) thin film","authors":"J. Domaradzki, K. Baniewicz, M. Mazur, M. Pasierbek, T. Berlicki","doi":"10.1109/STYSW.2011.6155835","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155835","url":null,"abstract":"Gasochromic thin films are used in the fields of gas sensing, smart windows and display industries. In this paper wettability and long-term stability of gasochromic effect of TiO2:(W, Cr, Mo) thin films have been investigated. Samples were deposited using high energy reactive magnetron sputtering process on Corning 7059 glass substrates. Contact angle, critical surface tension and surface free energy were determined using Theta Lite tensiometer. Thin films revealed hydrophilic properties. Gasochromic effect was observed in ethanol vapor atmosphere in temperature of at least 200 °C. Bleaching of the thin films was obtained in an ambient atmosphere at 350 °C. Also, the coloration of the samples was entirely reversible.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126275118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155841
A. Herrmann, T. Haase, F. Zimmer
In this paper, we report on results of an intensive study, which has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimized aspect ratio, trench profile and etch mask selectivity. The development of the DRIE process was mainly driven by the increase of the etch depth. Trenches, made with these DRIE processes, are used for the fabrication of micro-scanner mirrors. Filled trenches are integrated for electrical isolation, open trenches for the etching of mechanical separated structures, e.g. mirror spring and comb electrodes. Especially for micro-scanners with high frequencies, the mirror thickness is of great importance due to the dependence on the dynamic mirror deformation. We investigated the influence of the passivation process by lowering the waferchuck temperature und by adding oxygen plasma as inhibitor. After an etch tool upgrade, we analyzed also the influence of a low-frequency (LF) generator and a new control software on the etch results. Goal of these developments of the DRIE process was a higher aspect ratio, an improved filling of isolation trenches and a higher selectivity to the etch mask.
{"title":"Open and filled DRIE trenches with high aspect ratio used for micro-mirror scanners","authors":"A. Herrmann, T. Haase, F. Zimmer","doi":"10.1109/STYSW.2011.6155841","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155841","url":null,"abstract":"In this paper, we report on results of an intensive study, which has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimized aspect ratio, trench profile and etch mask selectivity. The development of the DRIE process was mainly driven by the increase of the etch depth. Trenches, made with these DRIE processes, are used for the fabrication of micro-scanner mirrors. Filled trenches are integrated for electrical isolation, open trenches for the etching of mechanical separated structures, e.g. mirror spring and comb electrodes. Especially for micro-scanners with high frequencies, the mirror thickness is of great importance due to the dependence on the dynamic mirror deformation. We investigated the influence of the passivation process by lowering the waferchuck temperature und by adding oxygen plasma as inhibitor. After an etch tool upgrade, we analyzed also the influence of a low-frequency (LF) generator and a new control software on the etch results. Goal of these developments of the DRIE process was a higher aspect ratio, an improved filling of isolation trenches and a higher selectivity to the etch mask.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126506760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155843
K. Indykiewicz, W. Macherzyński, R. Paszkiewicz
Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.
{"title":"The influence of contact mode on resolution in UV 400 lithography","authors":"K. Indykiewicz, W. Macherzyński, R. Paszkiewicz","doi":"10.1109/STYSW.2011.6155843","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155843","url":null,"abstract":"Optical lithography is the most popular lithographic technique in modern semiconductor manufacture. High pattern resolution is very desirable parameter in many devices. Because of that different contact methods were investigated. In the article we present influence of contact modes between the mask and the sample on pattern resolution. We defined the maximal resolution of test structures obtained for various distances of proximity contacts in optical lithography process.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122380032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155836
S. Gade, R. Herschel, C. Schaffer
A fiber optic delay line filter is presented using a cascaded structure of two Mach-Zehnder interferometers to obtain full adaptive dispersion slope compensation simultaneously for multichannel WDM systems at bitrates of 40 Gbps and above.
{"title":"Cascaded fiber optic delay line filter for adaptive dispersion slope compensation","authors":"S. Gade, R. Herschel, C. Schaffer","doi":"10.1109/STYSW.2011.6155836","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155836","url":null,"abstract":"A fiber optic delay line filter is presented using a cascaded structure of two Mach-Zehnder interferometers to obtain full adaptive dispersion slope compensation simultaneously for multichannel WDM systems at bitrates of 40 Gbps and above.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115403834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155857
K. Sieradzka, D. Kaczmarek, J. Domaradzki, E. Prociów, T. Berlicki
The current work is concerned with heterojunctions consist of transparent oxide semiconductors (TOSs) deposited on different silicon (Si) substrates using in photovoltaics. The TOS-Si heterojunctions were fabricated by high energy reactive magnetron sputtering (HE RMS). The sputtering was performed from V metallic foils located on Ti target. As a TOS materials the mixed titanium-vanadium (Ti-V) oxides have been selected. The nanocrystalline titanium-vanadium thin films have high transmission coefficient (ca. 76 % in visible spectral range), resistivity 105 ¿cm at room temperature and n-type electrical conduction. Additionally, the TOS films deposited on Si substrate perform a antireflection function through reduce reflection coefficient of pure Si ones. Based on current to voltage (I-V) measurements of different TOS-Si heterojunctions, the existence of a photoelectric effect under the influence of active area radiation has been found. Therefore, the applicability of mixed titanium-vanadium oxides to various photovoltaics application has been discussed.
{"title":"Characterization of titanium-vanadium oxides deposited on silicon substrates using in photovoltaic applications","authors":"K. Sieradzka, D. Kaczmarek, J. Domaradzki, E. Prociów, T. Berlicki","doi":"10.1109/STYSW.2011.6155857","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155857","url":null,"abstract":"The current work is concerned with heterojunctions consist of transparent oxide semiconductors (TOSs) deposited on different silicon (Si) substrates using in photovoltaics. The TOS-Si heterojunctions were fabricated by high energy reactive magnetron sputtering (HE RMS). The sputtering was performed from V metallic foils located on Ti target. As a TOS materials the mixed titanium-vanadium (Ti-V) oxides have been selected. The nanocrystalline titanium-vanadium thin films have high transmission coefficient (ca. 76 % in visible spectral range), resistivity 105 ¿cm at room temperature and n-type electrical conduction. Additionally, the TOS films deposited on Si substrate perform a antireflection function through reduce reflection coefficient of pure Si ones. Based on current to voltage (I-V) measurements of different TOS-Si heterojunctions, the existence of a photoelectric effect under the influence of active area radiation has been found. Therefore, the applicability of mixed titanium-vanadium oxides to various photovoltaics application has been discussed.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121658726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155851
M. Mazur, Shigeng Song, J. Domaradzki, D. Kaczmarek, D. Wojcieszak, K. Sieradzka, F. Placido, P. Gemmellaro
For the purpose of this paper Nb2O5 thin films were manufactured by microwave-assisted reactive magnetron sputtering. Nb2O5 thin films with different thickness were deposited on standard microscope slides, SiO2 and silicon substrates. Wettability and optical properties of manufactured coatings were investigated. Knowledge of the macroscopic contact angle for materials allows to predict whether a liquid droplet will bead up on or spread out over a solid surface. In this paper contact angle, critical surface tension and surface free energy of Nb2O5 thin films with thickness of 565, 300, 200, 100 and 50 nm were investigated. Measurements of surface free energy and contact angle was carried out with a computer controlled goniometer system with water, ethylene glycol and diiodomethane. Contact angle measurements were performed according to the sessile drop method. The results have shown that all manufactured Nb2O5 thin films had the water contact angle of about 90 degrees. There was no difference in wettability for thin films with different thickness and deposited on different substrates. Also optical properties of deposited thin films were compared. Transmittance spectra of Nb2O5 thin films were measured using Hitachi U-3501 spectrophotometer. Based on transmittance and reflectance spectra, measured with the aid of Aquila nkd-8000 instrumentation, thickness, refractive index and extinction coefficient of Nb2O5 thin films were calculated using Drude - Lorentz model. Transparency in visible light range of deposited thin films varied from about 70 % up to 80 %. Refractive index and extinction coefficient were 2.32 and 4.55×10-5, respectively.
{"title":"Analysis of substrate type and thickness influence on wettability of Nb2O5 thin films","authors":"M. Mazur, Shigeng Song, J. Domaradzki, D. Kaczmarek, D. Wojcieszak, K. Sieradzka, F. Placido, P. Gemmellaro","doi":"10.1109/STYSW.2011.6155851","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155851","url":null,"abstract":"For the purpose of this paper Nb2O5 thin films were manufactured by microwave-assisted reactive magnetron sputtering. Nb2O5 thin films with different thickness were deposited on standard microscope slides, SiO2 and silicon substrates. Wettability and optical properties of manufactured coatings were investigated. Knowledge of the macroscopic contact angle for materials allows to predict whether a liquid droplet will bead up on or spread out over a solid surface. In this paper contact angle, critical surface tension and surface free energy of Nb2O5 thin films with thickness of 565, 300, 200, 100 and 50 nm were investigated. Measurements of surface free energy and contact angle was carried out with a computer controlled goniometer system with water, ethylene glycol and diiodomethane. Contact angle measurements were performed according to the sessile drop method. The results have shown that all manufactured Nb2O5 thin films had the water contact angle of about 90 degrees. There was no difference in wettability for thin films with different thickness and deposited on different substrates. Also optical properties of deposited thin films were compared. Transmittance spectra of Nb2O5 thin films were measured using Hitachi U-3501 spectrophotometer. Based on transmittance and reflectance spectra, measured with the aid of Aquila nkd-8000 instrumentation, thickness, refractive index and extinction coefficient of Nb2O5 thin films were calculated using Drude - Lorentz model. Transparency in visible light range of deposited thin films varied from about 70 % up to 80 %. Refractive index and extinction coefficient were 2.32 and 4.55×10-5, respectively.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124603048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155850
A. Mai, U. Dauderstadt, D. Pahner, M. Krellmann, D. Schmeiser, M. Wagner
The Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS) develops spatial light modulators (SLMs) based on arrays of tiltable micro mirrors on a semiconductor chip. Typical applications are pattern generation for deep UV-laser mask writing or structured illumination in microscopy. Development and optimization of such SLMs requires detailed knowledge of the device behaviour under operating conditions. Here, the flatness of each single mirror effects the image resolution and contrast of the generated pattern and is amongst others a characteristic property of SLMs. In this context a surface topography measurement under laser exposure (in situ) was designed. The interferometric setup uses the phase-shift principle and allows a resolution in z-direction in the single-digit nanometer range. During irradiation with UV-laser light at 248 nm (KrF) and energy densities of up to 20 mJ/cm2 the change in single micro-mirrors topography was detected in situ. Measurements with varying pulse energies were carried out to identify an impact on the device performance. In general, the setup is neither limited to a specific illumination wavelength nor to micro-mirrors as structures under test.
{"title":"In situ determination of laser induced degradation of micro-mirror arrays","authors":"A. Mai, U. Dauderstadt, D. Pahner, M. Krellmann, D. Schmeiser, M. Wagner","doi":"10.1109/STYSW.2011.6155850","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155850","url":null,"abstract":"The Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS) develops spatial light modulators (SLMs) based on arrays of tiltable micro mirrors on a semiconductor chip. Typical applications are pattern generation for deep UV-laser mask writing or structured illumination in microscopy. Development and optimization of such SLMs requires detailed knowledge of the device behaviour under operating conditions. Here, the flatness of each single mirror effects the image resolution and contrast of the generated pattern and is amongst others a characteristic property of SLMs. In this context a surface topography measurement under laser exposure (in situ) was designed. The interferometric setup uses the phase-shift principle and allows a resolution in z-direction in the single-digit nanometer range. During irradiation with UV-laser light at 248 nm (KrF) and energy densities of up to 20 mJ/cm2 the change in single micro-mirrors topography was detected in situ. Measurements with varying pulse energies were carried out to identify an impact on the device performance. In general, the setup is neither limited to a specific illumination wavelength nor to micro-mirrors as structures under test.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133271980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155853
Damian Nowak
The particular group of passives are magnetic and capacitive devices, which electrical parameters are tightly correlated with their geometry. A great variety of inductors and capacitors manufactured in different technologies are commonly applied in electronic circuits. Special attention should be paid at planar components that can be easily fabricated for example by thick-film and LTCC technology and integrated in Multi-Chip Modules (MCM). This paper presents some theoretical studies of planar inductors and capacitors. Specialised software for high-frequency EM (Electromagnetic) analysis was used for investigation of correlations between geometry of planar components and its basic parameters. Influence of planar dimensions, width of conductor paths and spacing on inductance/capacitance, quality factor and resonance frequency was determined.
{"title":"Simulations of passive components in LTCC technology","authors":"Damian Nowak","doi":"10.1109/STYSW.2011.6155853","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155853","url":null,"abstract":"The particular group of passives are magnetic and capacitive devices, which electrical parameters are tightly correlated with their geometry. A great variety of inductors and capacitors manufactured in different technologies are commonly applied in electronic circuits. Special attention should be paid at planar components that can be easily fabricated for example by thick-film and LTCC technology and integrated in Multi-Chip Modules (MCM). This paper presents some theoretical studies of planar inductors and capacitors. Specialised software for high-frequency EM (Electromagnetic) analysis was used for investigation of correlations between geometry of planar components and its basic parameters. Influence of planar dimensions, width of conductor paths and spacing on inductance/capacitance, quality factor and resonance frequency was determined.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126038609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155846
A. Kłossowicz, P. Winiarski, A. Dziedzic
The passives (resistors, capacitors, inductors) embedded in printed circuit boards (PCBs) can improve electrical properties and reliability of electronic systems. Pulse durability is an important parameter of passive components and active devices. In the case of resistors it allows to determine many properties including maximum power dissipation, resistance change or phenomena occurring in resistor structures after pulse surging. Furthermore pulse durability defines utility for pulse circuits. Thus this work presents pulse durability of thin-film resistors made on the surface or embedded in Printed Circuit Boards. Investigated test structures were made of nickel-phosphorus (Ni-P) alloy on FR-4 laminate with sheet resistance 25 Ω/sq or 100 Ω/sq. Pulse durability was determined by calculating the maximum nondestructive electric field, maximum nondestructive surface power density or maximum nondestructive volume power density. These parameters were determined in dependence on pulse duration, resistor geometry (length, width, aspect ratio), type of cladding, laser trimming and accelerated aging process.
{"title":"Pulse durability of thin-film resistors embedded in printed circuit boards","authors":"A. Kłossowicz, P. Winiarski, A. Dziedzic","doi":"10.1109/STYSW.2011.6155846","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155846","url":null,"abstract":"The passives (resistors, capacitors, inductors) embedded in printed circuit boards (PCBs) can improve electrical properties and reliability of electronic systems. Pulse durability is an important parameter of passive components and active devices. In the case of resistors it allows to determine many properties including maximum power dissipation, resistance change or phenomena occurring in resistor structures after pulse surging. Furthermore pulse durability defines utility for pulse circuits. Thus this work presents pulse durability of thin-film resistors made on the surface or embedded in Printed Circuit Boards. Investigated test structures were made of nickel-phosphorus (Ni-P) alloy on FR-4 laminate with sheet resistance 25 Ω/sq or 100 Ω/sq. Pulse durability was determined by calculating the maximum nondestructive electric field, maximum nondestructive surface power density or maximum nondestructive volume power density. These parameters were determined in dependence on pulse duration, resistor geometry (length, width, aspect ratio), type of cladding, laser trimming and accelerated aging process.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129081236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-07-08DOI: 10.1109/STYSW.2011.6155849
D. Liepelt, R. Herschel, S. Gade, C. Schaffer
For realizing a fiber optic attenuator bending losses and transition losses between the bent and plane fiber are used. In this paper the realized attenuators will be characterized by several measurements. Their attribute to attenuate a signal will be conclusively verified experimentally.
{"title":"Realization and characterization of a variable fiber optic attenuator","authors":"D. Liepelt, R. Herschel, S. Gade, C. Schaffer","doi":"10.1109/STYSW.2011.6155849","DOIUrl":"https://doi.org/10.1109/STYSW.2011.6155849","url":null,"abstract":"For realizing a fiber optic attenuator bending losses and transition losses between the bent and plane fiber are used. In this paper the realized attenuators will be characterized by several measurements. Their attribute to attenuate a signal will be conclusively verified experimentally.","PeriodicalId":261643,"journal":{"name":"2011 International Students and Young Scientists Workshop \"Photonics and Microsystems\"","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125259885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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