Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174014
A. Volkov, G. Zinoviev, A. P. Kosarev
In the given work has been analysed work single-phase three-zone AC-DC voltage converter. It is shown, that application multizone converters essentially improves quality of output voltage, and also an input current of the converter. Analytical expressions for total harmonic distortion of output voltage, input current, adjusting and external characteristics, and also a power factor are presented. Systems of pulse-phase regulation of new converters are created. The graphics illustrating results of computer modelling which visually show comparability of theoretical results and the spent experiments are resulted.
{"title":"Development and research of multizone rectifiers","authors":"A. Volkov, G. Zinoviev, A. P. Kosarev","doi":"10.1109/EDM.2009.5174014","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174014","url":null,"abstract":"In the given work has been analysed work single-phase three-zone AC-DC voltage converter. It is shown, that application multizone converters essentially improves quality of output voltage, and also an input current of the converter. Analytical expressions for total harmonic distortion of output voltage, input current, adjusting and external characteristics, and also a power factor are presented. Systems of pulse-phase regulation of new converters are created. The graphics illustrating results of computer modelling which visually show comparability of theoretical results and the spent experiments are resulted.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116044388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173919
G. L. Kuryshev
The basic physico-technological principles of creating a perfect interface in MIS structures on InSb and InAs, and fabrication of IR-photodetectors, functioning under non-equilibrium depletion mode, on their base are formulated in the present contribution.
{"title":"Physic-technological principles for fabrication of multielement InSb- and InAs-based MIS IR-photodetectors","authors":"G. L. Kuryshev","doi":"10.1109/EDM.2009.5173919","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173919","url":null,"abstract":"The basic physico-technological principles of creating a perfect interface in MIS structures on InSb and InAs, and fabrication of IR-photodetectors, functioning under non-equilibrium depletion mode, on their base are formulated in the present contribution.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125740076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173942
V. Vasilyev
Basic film step coverage and gap-fill data has been consolidated and compared with the observed thin film CVD kinetics trends. Based on some assumptions regarding reaction kinetics, obtained correlations are believed to be applicable for an optimization of ultra small gap filling in deep submicron Integrated Circuit technology.
{"title":"Features of thin film CVD processes used in IC device technology","authors":"V. Vasilyev","doi":"10.1109/EDM.2009.5173942","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173942","url":null,"abstract":"Basic film step coverage and gap-fill data has been consolidated and compared with the observed thin film CVD kinetics trends. Based on some assumptions regarding reaction kinetics, obtained correlations are believed to be applicable for an optimization of ultra small gap filling in deep submicron Integrated Circuit technology.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121786415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173913
Artyom A. Voshchenkov, M. Efremov, A. H. Antonenko, Gennady H. Kamayev, V. Volodin, S. Arzhannikova, A. Vishnyakov, D. Marin, A. Gismatulin
Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.
{"title":"The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer","authors":"Artyom A. Voshchenkov, M. Efremov, A. H. Antonenko, Gennady H. Kamayev, V. Volodin, S. Arzhannikova, A. Vishnyakov, D. Marin, A. Gismatulin","doi":"10.1109/EDM.2009.5173913","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173913","url":null,"abstract":"Series of nanopowder were manufactured, for which peak was observed in Raman's spectrum. That peak corresponds to Raman scattering on monocrystalline silicon. In photoluminescence spectra broad peaks were observed. That peaks covers range from red to blue. MOS-structures with nanoballs incrusted in SiO2 were manufactured. For those structures, differential Voltage-Capacity (C-V) and Conductivity characteristics with frequency and structure variety were obtained. Significant increase of differential capacity in an accumulation region was observed. Frequency dependence is obvious. Also Static volt-ampere characteristic was obtained with dependence of Temperature and lighting of a sample. Characteristics have diode type. Photo effect observed at room temperature.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125960585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173914
E. Tishkovsky, Vladimir I. Obodnicov, Yaroslav V. Zabagonsky
It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors — the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given voltage and given oxide charge the simple design rule may be fomulated — the distance in the planar plain between electrode and the junction line must be grater than the punch-through length.
{"title":"Simulation of the premature breakdown of the planar p-n junction at the avalanch multiplication of carriers in silicon","authors":"E. Tishkovsky, Vladimir I. Obodnicov, Yaroslav V. Zabagonsky","doi":"10.1109/EDM.2009.5173914","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173914","url":null,"abstract":"It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors — the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given voltage and given oxide charge the simple design rule may be fomulated — the distance in the planar plain between electrode and the junction line must be grater than the punch-through length.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127257514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174020
V. V. Pedder, A. V. Pedder, V. Khmelev, Boris G. Polyakov, A. N. Khmeleva, Y.V. Shkuro, I. V. Surgutskova, M. V. Naboka, V. Mironenko
It is shown theoretically and experimentally that an important investment into the intensification of mass exchange processes in capillary porous system filled with liquid, for example, diffusion and filtration processes, introduce the extraction caused by ≪reverse≫ ultrasound capillary effect, which arises in the low frequency ultrasonic field. The rules obtained in changing the kinetics of mass exchange processes in capillary porous system of models and biological objects can be used for development and introducing into the practice the new biological and medical technologies for treatment the wounds and wound infections in various areas of clinical medicine.
{"title":"≪Reverse≫ ultrasound capillary effect and some directions of it clinical applications","authors":"V. V. Pedder, A. V. Pedder, V. Khmelev, Boris G. Polyakov, A. N. Khmeleva, Y.V. Shkuro, I. V. Surgutskova, M. V. Naboka, V. Mironenko","doi":"10.1109/EDM.2009.5174020","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174020","url":null,"abstract":"It is shown theoretically and experimentally that an important investment into the intensification of mass exchange processes in capillary porous system filled with liquid, for example, diffusion and filtration processes, introduce the extraction caused by ≪reverse≫ ultrasound capillary effect, which arises in the low frequency ultrasonic field. The rules obtained in changing the kinetics of mass exchange processes in capillary porous system of models and biological objects can be used for development and introducing into the practice the new biological and medical technologies for treatment the wounds and wound infections in various areas of clinical medicine.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127805149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173968
V. N. Udalov
New methodic of spectrum analysis in MESFET RF switches for producing of multi-positional amplitude manipulation in digital communications and television systems is presented. Methodic is based on Furrier lines and takes into consideration nonlinear properties of “gate - channel” barrier capacity.
{"title":"Nonlinear analysis in MESFET RF switches","authors":"V. N. Udalov","doi":"10.1109/EDM.2009.5173968","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173968","url":null,"abstract":"New methodic of spectrum analysis in MESFET RF switches for producing of multi-positional amplitude manipulation in digital communications and television systems is presented. Methodic is based on Furrier lines and takes into consideration nonlinear properties of “gate - channel” barrier capacity.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129525635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173925
G. V. Perov, Dmitry O. Kusnetsov
1-D model of doping diffusion in silicon from limited source on planar and non-planar side of silicon substrate with taking into attention the segregation of doping on the interface with blocking oxide is developed. A conditions for controlling the parameters of profiles in the depth of the silicon substrate is defined.
{"title":"Modeling of through diffusion profile in the volume of silicon substrate","authors":"G. V. Perov, Dmitry O. Kusnetsov","doi":"10.1109/EDM.2009.5173925","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173925","url":null,"abstract":"1-D model of doping diffusion in silicon from limited source on planar and non-planar side of silicon substrate with taking into attention the segregation of doping on the interface with blocking oxide is developed. A conditions for controlling the parameters of profiles in the depth of the silicon substrate is defined.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121345462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173982
V. Khmelev, A. Lebedev, S. N. Tsyganok, A. Shalunov, Anton N. Galahov, Ksenia V. Shalunova
In article are suggest multifrequency ultrasonic transducer with stepped-plate disk. This device is mean for coagulation aerosols with 0.4 µm particle size. Also present method of engineering calculation stepped-plate radiator.
{"title":"Multifrequency ultrasonic transducer with stepped-plate disk","authors":"V. Khmelev, A. Lebedev, S. N. Tsyganok, A. Shalunov, Anton N. Galahov, Ksenia V. Shalunova","doi":"10.1109/EDM.2009.5173982","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173982","url":null,"abstract":"In article are suggest multifrequency ultrasonic transducer with stepped-plate disk. This device is mean for coagulation aerosols with 0.4 µm particle size. Also present method of engineering calculation stepped-plate radiator.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"185 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122593859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173941
F. Dultsev, V. Kesler
A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH4/H2/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ∼18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300°C restore the initial surface stoichiometry.
{"title":"XPS investigation of InAs etching in planar inductively coupled plasma","authors":"F. Dultsev, V. Kesler","doi":"10.1109/EDM.2009.5173941","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173941","url":null,"abstract":"A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH4/H2/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ∼18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300°C restore the initial surface stoichiometry.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117093684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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